IN161924B - - Google Patents

Info

Publication number
IN161924B
IN161924B IN679/CAL/85A IN679CA1985A IN161924B IN 161924 B IN161924 B IN 161924B IN 679CA1985 A IN679CA1985 A IN 679CA1985A IN 161924 B IN161924 B IN 161924B
Authority
IN
India
Application number
IN679/CAL/85A
Other languages
English (en)
Inventor
William Clyde Higginbotham
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IN161924B publication Critical patent/IN161924B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • C30B15/12Double crucible methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
IN679/CAL/85A 1984-10-29 1985-09-25 IN161924B (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66606684A 1984-10-29 1984-10-29

Publications (1)

Publication Number Publication Date
IN161924B true IN161924B (da) 1988-02-27

Family

ID=24672685

Family Applications (1)

Application Number Title Priority Date Filing Date
IN679/CAL/85A IN161924B (da) 1984-10-29 1985-09-25

Country Status (5)

Country Link
JP (1) JPH0784358B2 (da)
DE (1) DE3534807A1 (da)
FR (1) FR2572424B1 (da)
GB (1) GB2166062B (da)
IN (1) IN161924B (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2198966A (en) * 1986-12-09 1988-06-29 Westinghouse Electric Corp Method of growing silicon dendritic-web crystals
IN168114B (da) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4747774A (en) * 1987-02-09 1988-05-31 Westinghouse Electric Corp. Conforming crucible/susceptor system for silicon crystal growth
DE3733487C2 (de) * 1987-10-03 1997-08-14 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JPH035392A (ja) * 1989-05-30 1991-01-11 Nkk Corp シリコン単結晶の製造装置
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
JP2585123B2 (ja) * 1990-04-13 1997-02-26 東芝セラミックス株式会社 シリコン単結晶の製造方法
BR9203110A (pt) 1992-08-12 1994-03-01 Petroleo Brasileiro Sa Composicao catalitica passivadora para o craqueamento de hidrocarbonetos,alumina e processo de craqueamento catalitico fluido
JP2010208869A (ja) * 2009-03-06 2010-09-24 Sharp Corp 多結晶体または単結晶体の製造装置および製造方法
JP5923700B1 (ja) * 2015-11-30 2016-05-25 並木精密宝石株式会社 大型efg法用育成炉の蓋体構造

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2152801A1 (de) * 1970-11-09 1972-05-10 Little Inc A Verfahren und Ofen zum Ziehen von Kristallen gleichförmiger Zusammensetzung nach dem Czochralski-Verfahren
US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
JPS5373481A (en) * 1976-12-13 1978-06-29 Nippon Telegr & Teleph Corp <Ntt> Continuous preparation apparatus for sheet crystal
US4389377A (en) * 1981-07-10 1983-06-21 The United States Of America As Represented By The United States Department Of Energy Apparatus for growing a dendritic web
JPS58130195A (ja) * 1982-01-27 1983-08-03 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置

Also Published As

Publication number Publication date
JPS61174188A (ja) 1986-08-05
GB2166062B (en) 1988-02-17
JPH0784358B2 (ja) 1995-09-13
GB8524260D0 (en) 1985-11-06
GB2166062A (en) 1986-04-30
FR2572424A1 (fr) 1986-05-02
FR2572424B1 (fr) 1991-01-11
DE3534807A1 (de) 1986-06-05

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