JPH07506216A - トリガ電圧を低減したscr保護構造および回路 - Google Patents
トリガ電圧を低減したscr保護構造および回路Info
- Publication number
- JPH07506216A JPH07506216A JP5510949A JP51094993A JPH07506216A JP H07506216 A JPH07506216 A JP H07506216A JP 5510949 A JP5510949 A JP 5510949A JP 51094993 A JP51094993 A JP 51094993A JP H07506216 A JPH07506216 A JP H07506216A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- conductivity type
- type
- bipolar transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Abstract
Description
Claims (11)
- 1.表面を有する第一の導電型の半導体基板、該基板中の該表面にあり、かっ該 基板との境界を有する第二の導電型の第一の領域、 該第一の領域内の該基板表面にある該第二の導電型の第二の領域、 該第一の領域内の該基板表面にあり、かっ該第二の領域に隣接する該第一の導電 型の第三の領域、該第一の領域中の該基板表面にあり、かっその基板との境界を 越えて該表面に沿って該基板中に広がっており、該第一の領域よりも高い導電性 を有する第四の領域、該基板中の該表面にあり、かっ該第一の領域とは隔てられ ている該第二の導電型の第五の領域、 該基板中の該表面にあり、かっ該第一の領域とは隔てられている該第一の導電型 の第六の領域、 該第四の領域とは反対の導電型を有し、かっ該第四の領域と隣接する第七の領域 、 該第二および第三の領域の両方と電気的に接触している第一の端子、ならびに 該第五および第六の領域の両方と電気的に接触している第二の端子を備えており 、 該基板、第一の領域および第五の領域は、ある導電型の第一のバイポーラトラン ジスタを形成しており、かっ該基板、第一の領域および第二の領域は、逆の導電 型を有し、該第一のバイポーラトランジスタに接続されている第二のバイポーラ トランジスタを形成している保護装置。
- 2.前記第七の領域が、前記表面から前記第一の領域の中へ入る距離だけ広がっ ている請求項1に記載の装置。
- 3.前記第七の領域が前記第一の領域と同じ導電型を有している請求項2に記載 の装置。
- 4.前記第七の領域が前記表面から前記基板の中へ入る距離だけ広がっている請 求項1に記載の装置。
- 5.前記第七の領域が前記基板と同じ導電型を有する請求項4に記載の装置。
- 6.第一および第二の端子ならびに基準端子を有する集積回路と、 第一および第二の電極を有し、各電極が該端子の一方に接続されているSCR保 護装置とを備えている構造であって、該保護装置は、 表面を有する第一の導電型の半導体基板、該基板中の該表面にあり、かっ該基板 との境界を有する第二の導電型の第一の領域、 該第一の領域内の該基板表面にある該第二の導電型の第二の領域、 該第一の領域内の該基板表面にあり、該第二の領域に隣接する該第一の導電型の 第三の領域、 該第一の領域にあり、かつその基板との境界を越えて該基板中に広がっており、 該第一の領域よりも高い導電性を有する第四の領域、 該基板中の該表面にあり、かっ該第一の領域の境界の外側にある該第二の導電型 の第五の領域、 該基板中の該表面にあり、かっ該第一の領域の境界の外側にある該第一の導電型 の第六の領域、および該第四の領域とは逆の導電型を有し、かっ該第四の領域と 隣接する第七の領域を備えており、 該第一の電極は、該第二および第三の領域と電気的に接触しており、該第二の電 極は該第五および第六の領域と電気的に接触しており、 該基板、第一の領域および第五の領域は、ある導電型の第一のバイポーラトラン ジスタを形成しており、かっ該基板、第一の領域および第二の領域は、逆の導電 型を有し、該第一のバイポーラトランジスタに接続されている第二のバイポーラ トランジスタを形成している構造。
- 7.前記第七の領域が前記表面から前記第一の領域の中に入る距離だけ広がって いる請求項6に記載の装置。
- 8.前記第七の領域が前記第一の領域と同じ導電型を有する請求項7に記載の装 置。
- 9.前記第七の領域が前記表面から前記基板の中へ入る距離だけ広がっている請 求項6に記載の装置。
- 10.前記第七の領域が前記基板と同じ導電型を有する請求項9に記載の装置。
- 11.前記第二の端子が前記集積回路の入力信号端子である請求項6に記載の構 造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US803,880 | 1991-12-09 | ||
US07/803,880 US5274262A (en) | 1989-05-17 | 1991-12-09 | SCR protection structure and circuit with reduced trigger voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07506216A true JPH07506216A (ja) | 1995-07-06 |
JP2699654B2 JP2699654B2 (ja) | 1998-01-19 |
Family
ID=25187679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5510949A Expired - Fee Related JP2699654B2 (ja) | 1991-12-09 | 1992-12-04 | トリガ電圧を低減したscr保護構造および回路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5274262A (ja) |
EP (1) | EP0616728B1 (ja) |
JP (1) | JP2699654B2 (ja) |
KR (1) | KR0139648B1 (ja) |
DE (1) | DE69221157T2 (ja) |
ES (1) | ES2105206T3 (ja) |
WO (1) | WO1993012544A1 (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2690786A1 (fr) * | 1992-04-30 | 1993-10-29 | Sgs Thomson Microelectronics Sa | Dispositif de protection d'un circuit intégré contre les décharges électrostatiques. |
US5343053A (en) * | 1993-05-21 | 1994-08-30 | David Sarnoff Research Center Inc. | SCR electrostatic discharge protection for integrated circuits |
JPH07169922A (ja) * | 1993-09-29 | 1995-07-04 | At & T Global Inf Solutions Internatl Inc | シリコン制御整流器 |
US5616943A (en) | 1993-09-29 | 1997-04-01 | At&T Global Information Solutions Company | Electrostatic discharge protection system for mixed voltage application specific integrated circuit design |
US5430595A (en) * | 1993-10-15 | 1995-07-04 | Intel Corporation | Electrostatic discharge protection circuit |
US5519242A (en) * | 1994-08-17 | 1996-05-21 | David Sarnoff Research Center, Inc. | Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor |
US5600525A (en) * | 1994-08-17 | 1997-02-04 | David Sarnoff Research Center Inc | ESD protection circuit for integrated circuit |
US5907462A (en) * | 1994-09-07 | 1999-05-25 | Texas Instruments Incorporated | Gate coupled SCR for ESD protection circuits |
US5637900A (en) * | 1995-04-06 | 1997-06-10 | Industrial Technology Research Institute | Latchup-free fully-protected CMOS on-chip ESD protection circuit |
US5572394A (en) * | 1995-04-06 | 1996-11-05 | Industrial Technology Research Institute | CMOS on-chip four-LVTSCR ESD protection scheme |
US5754380A (en) * | 1995-04-06 | 1998-05-19 | Industrial Technology Research Institute | CMOS output buffer with enhanced high ESD protection capability |
WO1996031907A1 (en) * | 1995-04-06 | 1996-10-10 | Industrial Technology Research Institute | N-sided polygonal cell lay-out for multiple cell transistor |
JP2850801B2 (ja) * | 1995-07-28 | 1999-01-27 | 日本電気株式会社 | 半導体素子 |
EP0785576A3 (en) * | 1995-09-29 | 1998-10-07 | Texas Instruments Incorporated | Circuit including protection means |
EP0803955A3 (en) * | 1996-04-25 | 1998-05-20 | Texas Instruments Incorporated | An electrostatic discharge protection circuit |
US5966599A (en) * | 1996-05-21 | 1999-10-12 | Lsi Logic Corporation | Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device |
US5663860A (en) * | 1996-06-28 | 1997-09-02 | Harris Corporation | High voltage protection circuits |
US5821572A (en) * | 1996-12-17 | 1998-10-13 | Symbios, Inc. | Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection |
JP4256544B2 (ja) | 1998-08-25 | 2009-04-22 | シャープ株式会社 | 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路 |
US6271999B1 (en) | 1998-11-20 | 2001-08-07 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit for different power supplies |
US6594132B1 (en) | 2000-05-17 | 2003-07-15 | Sarnoff Corporation | Stacked silicon controlled rectifiers for ESD protection |
US6803633B2 (en) * | 2001-03-16 | 2004-10-12 | Sarnoff Corporation | Electrostatic discharge protection structures having high holding current for latch-up immunity |
US7525777B2 (en) * | 2002-03-27 | 2009-04-28 | Tower Manufacturing Corporation | Fireguard circuit |
US7196889B2 (en) * | 2002-11-15 | 2007-03-27 | Medtronic, Inc. | Zener triggered overvoltage protection device |
US20040094526A1 (en) * | 2002-11-15 | 2004-05-20 | Mccoy Edward D. | Cutting laser beam nozzle assembly |
US7244992B2 (en) * | 2003-07-17 | 2007-07-17 | Ming-Dou Ker | Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection |
US20050275029A1 (en) * | 2004-06-15 | 2005-12-15 | Jeffrey Watt | Fast turn-on and low-capacitance SCR ESD protection |
US7408754B1 (en) | 2004-11-18 | 2008-08-05 | Altera Corporation | Fast trigger ESD device for protection of integrated circuits |
DE102005022763B4 (de) * | 2005-05-18 | 2018-02-01 | Infineon Technologies Ag | Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises |
US20070263332A1 (en) * | 2006-05-11 | 2007-11-15 | Silicon Laboratories, Inc. | System and method for high voltage protection of powered devices |
US7732834B2 (en) * | 2007-01-26 | 2010-06-08 | Infineon Technologies Ag | Semiconductor ESD device and method of making same |
US20090273868A1 (en) * | 2008-05-01 | 2009-11-05 | Semiconductor Components Industries, Llc | Transient voltage suppressor and method |
US8339758B2 (en) * | 2008-05-01 | 2012-12-25 | Semiconductor Components Industries, Llc | Transient voltage suppressor and method |
US7638857B2 (en) * | 2008-05-07 | 2009-12-29 | United Microelectronics Corp. | Structure of silicon controlled rectifier |
US8653557B2 (en) * | 2010-02-22 | 2014-02-18 | Sofics Bvba | High holding voltage electrostatic discharge (ESD) device |
US9041054B2 (en) | 2010-02-22 | 2015-05-26 | Sofics Bvba | High holding voltage electrostatic discharge protection device |
US10580765B1 (en) * | 2018-12-02 | 2020-03-03 | Nanya Technology Corporation | Semiconductor structure for electrostatic discharge protection |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5410228B2 (ja) * | 1973-08-20 | 1979-05-02 | ||
US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
JPS52102690A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Semiconductor capacitance device |
US4100561A (en) * | 1976-05-24 | 1978-07-11 | Rca Corp. | Protective circuit for MOS devices |
JPS5422781A (en) * | 1977-07-22 | 1979-02-20 | Hitachi Ltd | Insulator gate protective semiconductor device |
JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
YU43752B (en) * | 1978-10-16 | 1989-12-31 | Marko Petrovic | Transistorized voltage limiter |
JPS5696851A (en) * | 1979-12-27 | 1981-08-05 | Fujitsu Ltd | Static breakdown preventive element |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
US4567500A (en) * | 1981-12-01 | 1986-01-28 | Rca Corporation | Semiconductor structure for protecting integrated circuit devices |
US4797724A (en) * | 1982-06-30 | 1989-01-10 | Honeywell Inc. | Reducing bipolar parasitic effects in IGFET devices |
US4484244A (en) * | 1982-09-22 | 1984-11-20 | Rca Corporation | Protection circuit for integrated circuit devices |
US4513309A (en) * | 1982-11-03 | 1985-04-23 | Westinghouse Electric Corp. | Prevention of latch-up in CMOS integrated circuits using Schottky diodes |
US4622573A (en) * | 1983-03-31 | 1986-11-11 | International Business Machines Corporation | CMOS contacting structure having degeneratively doped regions for the prevention of latch-up |
IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
JPS60152055A (ja) * | 1984-01-20 | 1985-08-10 | Matsushita Electric Ind Co Ltd | 相補型mos半導体装置 |
US4683488A (en) * | 1984-03-29 | 1987-07-28 | Hughes Aircraft Company | Latch-up resistant CMOS structure for VLSI including retrograded wells |
US4633283A (en) * | 1985-03-11 | 1986-12-30 | Rca Corporation | Circuit and structure for protecting integrated circuits from destructive transient voltages |
US4760433A (en) * | 1986-01-31 | 1988-07-26 | Harris Corporation | ESD protection transistors |
GB8621839D0 (en) * | 1986-09-10 | 1986-10-15 | British Aerospace | Electrostatic discharge protection circuit |
US4939616A (en) * | 1988-11-01 | 1990-07-03 | Texas Instruments Incorporated | Circuit structure with enhanced electrostatic discharge protection |
US5072273A (en) * | 1990-05-04 | 1991-12-10 | David Sarnoff Research Center, Inc. | Low trigger voltage SCR protection device and structure |
EP0472592B1 (en) * | 1989-05-17 | 1995-09-27 | David Sarnoff Research Center, Inc. | Low trigger voltage scr protection device and structure |
-
1991
- 1991-12-09 US US07/803,880 patent/US5274262A/en not_active Expired - Lifetime
-
1992
- 1992-12-04 JP JP5510949A patent/JP2699654B2/ja not_active Expired - Fee Related
- 1992-12-04 ES ES93900739T patent/ES2105206T3/es not_active Expired - Lifetime
- 1992-12-04 KR KR1019940701991A patent/KR0139648B1/ko active
- 1992-12-04 DE DE69221157T patent/DE69221157T2/de not_active Expired - Lifetime
- 1992-12-04 EP EP93900739A patent/EP0616728B1/en not_active Expired - Lifetime
- 1992-12-04 WO PCT/US1992/010336 patent/WO1993012544A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2699654B2 (ja) | 1998-01-19 |
US5274262A (en) | 1993-12-28 |
EP0616728A4 (en) | 1995-01-04 |
WO1993012544A1 (en) | 1993-06-24 |
DE69221157T2 (de) | 1998-01-08 |
KR0139648B1 (ko) | 1998-06-01 |
EP0616728A1 (en) | 1994-09-28 |
ES2105206T3 (es) | 1997-10-16 |
DE69221157D1 (de) | 1997-09-04 |
EP0616728B1 (en) | 1997-07-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH07506216A (ja) | トリガ電圧を低減したscr保護構造および回路 | |
US6236087B1 (en) | SCR cell for electrical overstress protection of electronic circuits | |
US9263430B2 (en) | Semiconductor ESD device and method of making same | |
US5072273A (en) | Low trigger voltage SCR protection device and structure | |
US5717559A (en) | Input/output protection device for use in semiconductor device | |
US8456785B2 (en) | Semiconductor ESD device and method | |
US7939905B2 (en) | Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current | |
JP2006523965A (ja) | シリコンオンインシュレータ技術を対象とする静電放電(esd)保護用低電圧シリコン制御整流器(scr) | |
WO1998027591A1 (en) | Semiconductor protection devices | |
JP4209433B2 (ja) | 静電破壊保護装置 | |
US5440151A (en) | Electrostatic discharge protection device for MOS integrated circuits | |
US6347026B1 (en) | Input and power protection circuit implemented in a complementary metal oxide semiconductor process using salicides | |
US6847059B2 (en) | Semiconductor input protection circuit | |
EP0448119A2 (en) | Input protection resistor used in input protection circuit | |
US20060249792A1 (en) | Electrostatic discharge protection circuit and integrated circuit having the same | |
KR100380768B1 (ko) | 반도체 장치 | |
EP0472592B1 (en) | Low trigger voltage scr protection device and structure | |
US20220199611A1 (en) | Insulated-gate bipolar transistor with integrated schottky barrier | |
KR20010029964A (ko) | 반도체 집적회로용 입출력 보호 장치 | |
JPH06283673A (ja) | 静電気放電保護構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070926 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080926 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080926 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090926 Year of fee payment: 12 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100926 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100926 Year of fee payment: 13 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110926 Year of fee payment: 14 |
|
LAPS | Cancellation because of no payment of annual fees |