ES2105206T3 - Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida. - Google Patents

Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida.

Info

Publication number
ES2105206T3
ES2105206T3 ES93900739T ES93900739T ES2105206T3 ES 2105206 T3 ES2105206 T3 ES 2105206T3 ES 93900739 T ES93900739 T ES 93900739T ES 93900739 T ES93900739 T ES 93900739T ES 2105206 T3 ES2105206 T3 ES 2105206T3
Authority
ES
Spain
Prior art keywords
protection circuit
commanded
circuit including
trip voltage
silicon rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93900739T
Other languages
English (en)
Inventor
Leslie Ronald Avery
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Sarnoff Corp
Original Assignee
Sharp Corp
Sarnoff Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Sarnoff Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of ES2105206T3 publication Critical patent/ES2105206T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Abstract

SE PRESENTA UN DISPOSITIVO DE VOLTAJE DE BAJA RUPTURA (47) PARA PROTEGER UN CIRCUITO INTEGRADO (41) DE UNA ENERGIA TRANSITORIA. ESTE DISPOSITIVO SUMINISTRA UN SCR QUE TIENE UN VOLTAJE DE DISPARO REDUCIDO COMPATIBLE CON LOS PROCESADORES SUBMICRONICOS DE FABRICACION DE CIRCUITOS INTEGRADOS. TAMBIEN SE PRESENTA UN CIRCUITO DE PROTECCION SCR DE VOLTAJE DE RUPTURA.
ES93900739T 1991-12-09 1992-12-04 Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida. Expired - Lifetime ES2105206T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/803,880 US5274262A (en) 1989-05-17 1991-12-09 SCR protection structure and circuit with reduced trigger voltage

Publications (1)

Publication Number Publication Date
ES2105206T3 true ES2105206T3 (es) 1997-10-16

Family

ID=25187679

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93900739T Expired - Lifetime ES2105206T3 (es) 1991-12-09 1992-12-04 Estructura y circuito de proteccion que comprende un rectificador de silicio mandado con tension de disparo reducida.

Country Status (7)

Country Link
US (1) US5274262A (es)
EP (1) EP0616728B1 (es)
JP (1) JP2699654B2 (es)
KR (1) KR0139648B1 (es)
DE (1) DE69221157T2 (es)
ES (1) ES2105206T3 (es)
WO (1) WO1993012544A1 (es)

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US5616943A (en) 1993-09-29 1997-04-01 At&T Global Information Solutions Company Electrostatic discharge protection system for mixed voltage application specific integrated circuit design
JPH07169922A (ja) * 1993-09-29 1995-07-04 At & T Global Inf Solutions Internatl Inc シリコン制御整流器
US5430595A (en) * 1993-10-15 1995-07-04 Intel Corporation Electrostatic discharge protection circuit
US5519242A (en) * 1994-08-17 1996-05-21 David Sarnoff Research Center, Inc. Electrostatic discharge protection circuit for a NMOS or lateral NPN transistor
US5600525A (en) * 1994-08-17 1997-02-04 David Sarnoff Research Center Inc ESD protection circuit for integrated circuit
US5907462A (en) * 1994-09-07 1999-05-25 Texas Instruments Incorporated Gate coupled SCR for ESD protection circuits
US5754380A (en) * 1995-04-06 1998-05-19 Industrial Technology Research Institute CMOS output buffer with enhanced high ESD protection capability
US5572394A (en) * 1995-04-06 1996-11-05 Industrial Technology Research Institute CMOS on-chip four-LVTSCR ESD protection scheme
DE19581809B4 (de) * 1995-04-06 2008-12-24 Transpacific Ip, Ltd. MOS-Zelle, Mehrfachzellentransistor und IC-Chip
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
JP2850801B2 (ja) * 1995-07-28 1999-01-27 日本電気株式会社 半導体素子
EP0785576A3 (en) * 1995-09-29 1998-10-07 Texas Instruments Incorporated Circuit including protection means
EP0803955A3 (en) * 1996-04-25 1998-05-20 Texas Instruments Incorporated An electrostatic discharge protection circuit
US5966599A (en) * 1996-05-21 1999-10-12 Lsi Logic Corporation Method for fabricating a low trigger voltage silicon controlled rectifier and thick field device
US5663860A (en) * 1996-06-28 1997-09-02 Harris Corporation High voltage protection circuits
US5821572A (en) * 1996-12-17 1998-10-13 Symbios, Inc. Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection
JP4256544B2 (ja) * 1998-08-25 2009-04-22 シャープ株式会社 半導体集積回路の静電気保護装置、その製造方法および静電気保護装置を用いた静電気保護回路
US6271999B1 (en) 1998-11-20 2001-08-07 Taiwan Semiconductor Manufacturing Company ESD protection circuit for different power supplies
US6594132B1 (en) 2000-05-17 2003-07-15 Sarnoff Corporation Stacked silicon controlled rectifiers for ESD protection
US6803633B2 (en) * 2001-03-16 2004-10-12 Sarnoff Corporation Electrostatic discharge protection structures having high holding current for latch-up immunity
US7525777B2 (en) * 2002-03-27 2009-04-28 Tower Manufacturing Corporation Fireguard circuit
US20040094526A1 (en) * 2002-11-15 2004-05-20 Mccoy Edward D. Cutting laser beam nozzle assembly
US7196889B2 (en) * 2002-11-15 2007-03-27 Medtronic, Inc. Zener triggered overvoltage protection device
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
US20050275029A1 (en) * 2004-06-15 2005-12-15 Jeffrey Watt Fast turn-on and low-capacitance SCR ESD protection
US7408754B1 (en) 2004-11-18 2008-08-05 Altera Corporation Fast trigger ESD device for protection of integrated circuits
DE102005022763B4 (de) * 2005-05-18 2018-02-01 Infineon Technologies Ag Elektronische Schaltkreis-Anordnung und Verfahren zum Herstellen eines elektronischen Schaltkreises
US20070263332A1 (en) * 2006-05-11 2007-11-15 Silicon Laboratories, Inc. System and method for high voltage protection of powered devices
US7732834B2 (en) * 2007-01-26 2010-06-08 Infineon Technologies Ag Semiconductor ESD device and method of making same
US20090273868A1 (en) * 2008-05-01 2009-11-05 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US8339758B2 (en) * 2008-05-01 2012-12-25 Semiconductor Components Industries, Llc Transient voltage suppressor and method
US7638857B2 (en) * 2008-05-07 2009-12-29 United Microelectronics Corp. Structure of silicon controlled rectifier
US8653557B2 (en) * 2010-02-22 2014-02-18 Sofics Bvba High holding voltage electrostatic discharge (ESD) device
US9041054B2 (en) 2010-02-22 2015-05-26 Sofics Bvba High holding voltage electrostatic discharge protection device
US10580765B1 (en) * 2018-12-02 2020-03-03 Nanya Technology Corporation Semiconductor structure for electrostatic discharge protection

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JPS5422781A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Insulator gate protective semiconductor device
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
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Also Published As

Publication number Publication date
DE69221157T2 (de) 1998-01-08
DE69221157D1 (de) 1997-09-04
KR0139648B1 (ko) 1998-06-01
JP2699654B2 (ja) 1998-01-19
EP0616728B1 (en) 1997-07-23
WO1993012544A1 (en) 1993-06-24
US5274262A (en) 1993-12-28
EP0616728A1 (en) 1994-09-28
JPH07506216A (ja) 1995-07-06
EP0616728A4 (en) 1995-01-04

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