JPH07503761A - 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 - Google Patents

高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置

Info

Publication number
JPH07503761A
JPH07503761A JP5513725A JP51372593A JPH07503761A JP H07503761 A JPH07503761 A JP H07503761A JP 5513725 A JP5513725 A JP 5513725A JP 51372593 A JP51372593 A JP 51372593A JP H07503761 A JPH07503761 A JP H07503761A
Authority
JP
Japan
Prior art keywords
ions
ion
energy
charged ions
highly charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5513725A
Other languages
English (en)
Japanese (ja)
Inventor
アンドレ,ユルゲン
Original Assignee
ホフマイスター,ヘルムート
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ホフマイスター,ヘルムート filed Critical ホフマイスター,ヘルムート
Publication of JPH07503761A publication Critical patent/JPH07503761A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • C23C16/342Boron nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/31732Depositing thin layers on selected microareas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31742Etching microareas for repairing masks
    • H01J2237/31744Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP5513725A 1992-02-15 1993-01-30 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置 Pending JPH07503761A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4204650.5 1992-02-15
DE4204650A DE4204650C1 (https=) 1992-02-15 1992-02-15
PCT/EP1993/000214 WO1993016213A1 (de) 1992-02-15 1993-01-30 Verfahren und vorrichtung zur oberflächenmodifikation durch physikalisch-chemische reaktionen von gasen oder dämpfen an oberflächen mit unterstützung von hochgeladenen ionen

Publications (1)

Publication Number Publication Date
JPH07503761A true JPH07503761A (ja) 1995-04-20

Family

ID=6451865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5513725A Pending JPH07503761A (ja) 1992-02-15 1993-01-30 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置

Country Status (6)

Country Link
US (1) US5645897A (https=)
EP (1) EP0625218B1 (https=)
JP (1) JPH07503761A (https=)
AU (1) AU3452393A (https=)
DE (1) DE4204650C1 (https=)
WO (1) WO1993016213A1 (https=)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976992A (en) * 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6156393A (en) * 1997-11-12 2000-12-05 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6319566B1 (en) 1997-11-12 2001-11-20 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6878417B2 (en) 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6921722B2 (en) * 2000-05-30 2005-07-26 Ebara Corporation Coating, modification and etching of substrate surface with particle beam irradiation of the same
US7575924B2 (en) 2000-11-13 2009-08-18 Research Development Foundation Methods and compositions relating to improved lentiviral vectors and their applications
WO2002045737A2 (en) * 2000-12-07 2002-06-13 Board Of Regents, The University Of Texas System Methods of treatment involving human mda-7
US7045290B2 (en) 2001-02-15 2006-05-16 The University Of Chicago Yeast screens for treatment of human disease
ATE527347T1 (de) 2001-08-02 2011-10-15 Inst Clayton De La Rech Verfahren und zusammensetzungen im zusammenhang mit verbesserten lentivirusvektor- produktionssystemen
RU2305708C2 (ru) * 2001-10-02 2007-09-10 Энститю Клейтон Де Ля Решерш Рекомбинантный лентивирусный вектор, клетка-хозяин, трансдуцированная лентивирусным вектором, способ ее трансдукции и применение
DE10149588B4 (de) * 2001-10-08 2017-09-07 Oerlikon Trading Ag, Trübbach Verfahren zur Diamantbeschichtung von Substraten
CA2466133A1 (en) * 2001-11-02 2003-05-15 Rice University Recycling system for manipulation of intracellular nadh availability
ATE556714T1 (de) 2002-02-01 2012-05-15 Life Technologies Corp Doppelsträngige oligonukleotide
US20060009409A1 (en) 2002-02-01 2006-01-12 Woolf Tod M Double-stranded oligonucleotides
EP1572902B1 (en) 2002-02-01 2014-06-11 Life Technologies Corporation HIGH POTENCY siRNAS FOR REDUCING THE EXPRESSION OF TARGET GENES
US20030157269A1 (en) * 2002-02-20 2003-08-21 University Of Washington Method and apparatus for precision coating of molecules on the surfaces of materials and devices
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
AU2003228267A1 (en) * 2002-03-05 2003-09-22 Board Of Regents, The University Of Texas System Methods of enhancing immune induction involving mda-7
US7052840B2 (en) * 2002-04-03 2006-05-30 Capitol Genomix, Inc. Reversible association of nucleic acid with a carboxylated substrate
JP4343708B2 (ja) * 2002-04-26 2009-10-14 アンスティテュ ナシナル ドゥ ラ サントゥ エ ドゥ ラ ルシェルシェ メディカル−イ.エヌ.エス.ウ.エール.エム. 改良型キメラ糖タンパク質と、類型化されたレンチウイルス
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
JP2005524963A (ja) 2002-05-08 2005-08-18 ダナ・コーポレーション プラズマ触媒
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
US20100075423A1 (en) * 2002-06-12 2010-03-25 Life Technologies Corporation Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference
US20040248094A1 (en) * 2002-06-12 2004-12-09 Ford Lance P. Methods and compositions relating to labeled RNA molecules that reduce gene expression
GB2406169B (en) * 2002-06-12 2006-11-01 Ambion Inc Methods and compositions relating to labeled rna molecules that reduce gene expression
US20050014166A1 (en) * 2002-11-22 2005-01-20 Institut Clayton De La Recherche Compositions and systems for the regulation of genes
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
CA2515779A1 (en) 2003-02-14 2004-09-02 The Curators Of The University Of Missouri Contraceptive method and compositions related to proteasomal interference
CN102836420B (zh) * 2003-03-03 2014-03-12 得克萨斯州大学系统董事会 包含mda-7的组合物和方法
WO2005082396A2 (en) * 2003-12-01 2005-09-09 Introgen Therapeutics, Inc. Use of mda-7 to inhibit infection by pathogenic organisms
US20070281041A1 (en) * 2004-03-02 2007-12-06 Introgen Therapeutics, Inc. Compositions and Methods Involving MDA-7 for the Treatment of Cancer
EP2290073A3 (en) 2004-05-28 2011-08-31 Asuragen, Inc. Methods and compositions involving microRNA
CA2581086C (en) 2004-09-14 2023-11-07 The Regents Of The University Of Colorado, A Body Corporate Method for treatment with bucindolol based on genetic targeting
EP2302055B1 (en) 2004-11-12 2014-08-27 Asuragen, Inc. Methods and compositions involving miRNA and miRNA inhibitor molecules
KR20060055681A (ko) * 2004-11-18 2006-05-24 삼성전자주식회사 이온빔 보조 스퍼터링 증착장치
US20060142228A1 (en) * 2004-12-23 2006-06-29 Ambion, Inc. Methods and compositions concerning siRNA's as mediators of RNA interference
AU2006211960A1 (en) * 2005-02-08 2006-08-17 Board Of Regents, The University Of Texas System Compositions and methods involving MDA-7 for the treatment of cancer
EP1871913A2 (en) 2005-03-25 2008-01-02 Ambion, Inc. Methods and compositions for depleting abundant rna transcripts
WO2007092944A2 (en) * 2006-02-08 2007-08-16 Introgen Therapeutics, Inc. Compositions and methods involving gene therapy and proteasome modulation
US20090131348A1 (en) 2006-09-19 2009-05-21 Emmanuel Labourier Micrornas differentially expressed in pancreatic diseases and uses thereof
DE102007054074A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
BRPI0906429B1 (pt) 2008-01-10 2021-08-03 Research Development Foundation Método de identificação de uma infecção por e. chaffeensis em um indivíduo, uso de um ou mais polipeptídeo sintético e kit
AU2009206225B2 (en) 2008-01-25 2015-04-23 Multivir Inc. p53 biomarkers
US20090208672A1 (en) * 2008-01-30 2009-08-20 Polanyi John C Method of linear patterning at surfaces
WO2009137807A2 (en) 2008-05-08 2009-11-12 Asuragen, Inc. Compositions and methods related to mirna modulation of neovascularization or angiogenesis
EP2350131B1 (en) 2008-11-07 2017-06-07 Research Development Foundation Compositions and methods for the inhibition of cripto/grp78 complex formation and signaling
WO2010068738A1 (en) 2008-12-10 2010-06-17 Dana-Farber Cancer Institute, Inc. Mek mutations conferring resistance to mek inhibitors
US20110045080A1 (en) * 2009-03-24 2011-02-24 William Marsh Rice University Single-Walled Carbon Nanotube/Bioactive Substance Complexes and Methods Related Thereto
US9587270B2 (en) 2009-06-29 2017-03-07 Luminex Corporation Chimeric primers with hairpin conformations and methods of using same
US20120238509A1 (en) 2009-08-28 2012-09-20 Research Development Foundation Urocortin 2 analogs and uses thereof
US9512481B2 (en) 2009-09-11 2016-12-06 The Regents Of The University Of Colorado, A Body Corporate Polymorphisms in the PDE3A gene
ES2587191T3 (es) 2009-12-23 2016-10-21 Arca Biopharma, Inc. Métodos y composiciones para enfermedades y afecciones cardiovasculares
ES2576061T3 (es) 2010-02-25 2016-07-05 Dana-Farber Cancer Institute, Inc. Mutaciones de BRAF que confieren resistencia a inhibidores de BRAF
EP2542678B1 (en) 2010-03-04 2017-04-12 InteRNA Technologies B.V. A MiRNA MOLECULE DEFINED BY ITS SOURCE AND ITS THERAPEUTIC USES IN CANCER ASSOCIATED WITH EMT
PT2580322T (pt) 2010-06-09 2018-03-01 Dana Farber Cancer Inst Inc Uma mutação em mek1 que confere resistência aos inibidores de raf e mek
EP2591106A1 (en) 2010-07-06 2013-05-15 InteRNA Technologies B.V. Mirna and its diagnostic and therapeutic uses in diseases or conditions associated with melanoma, or in diseases or conditions associated with activated braf pathway
BR112013012265A2 (pt) 2010-11-17 2016-08-02 Asuragen Inc mirnas como biomarcadores para distinguir neoplasmas de tireoide benignos de malignos
EP2474617A1 (en) 2011-01-11 2012-07-11 InteRNA Technologies BV Mir for treating neo-angiogenesis
SG10201600836PA (en) 2011-02-03 2016-03-30 Mirna Therapeutics Inc Synthetic mimics of mir-34
JP2014506789A (ja) 2011-02-03 2014-03-20 マーナ セラピューティクス インコーポレイテッド miR−124の合成模倣体
WO2013040251A2 (en) 2011-09-13 2013-03-21 Asurgen, Inc. Methods and compositions involving mir-135b for distinguishing pancreatic cancer from benign pancreatic disease
WO2013063519A1 (en) 2011-10-26 2013-05-02 Asuragen, Inc. Methods and compositions involving mirna expression levels for distinguishing pancreatic cysts
EP3369818B1 (en) 2011-12-22 2021-06-09 InteRNA Technologies B.V. Mirna for treating head and neck cancer
US9587632B2 (en) 2012-03-30 2017-03-07 General Electric Company Thermally-controlled component and thermal control process
US9169567B2 (en) 2012-03-30 2015-10-27 General Electric Company Components having tab members
US9671030B2 (en) 2012-03-30 2017-06-06 General Electric Company Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery
WO2014045126A2 (en) 2012-09-18 2014-03-27 Uti Limited Partnership Treatment of pain by inhibition of usp5 de-ubiquitinase
WO2014055117A1 (en) 2012-10-04 2014-04-10 Asuragen, Inc. Diagnostic mirnas for differential diagnosis of incidental pancreatic cystic lesions
EP2917348A1 (en) 2012-11-06 2015-09-16 InteRNA Technologies B.V. Combination for use in treating diseases or conditions associated with melanoma, or treating diseases or conditions associated with activated b-raf pathway
US10125373B2 (en) 2013-01-22 2018-11-13 Arizona Board Of Regents On Behalf Of Arizona State University Geminiviral vector for expression of rituximab
WO2014134179A1 (en) 2013-02-28 2014-09-04 The Board Of Regents Of The University Of Texas System Methods for classifying a cancer as susceptible to tmepai-directed therapies and treating such cancers
US9944992B2 (en) 2013-03-15 2018-04-17 The University Of Chicago Methods and compositions related to T-cell activity
CA2929555A1 (en) 2013-11-08 2015-05-14 Baylor Research Institute Nuclear localization of glp-1 stimulates myocardial regeneration and reverses heart failure
EP3259346B1 (en) 2015-02-20 2024-08-07 Baylor College of Medicine P63 inactivation for the treatment of heart failure
WO2017079746A2 (en) 2015-11-07 2017-05-11 Multivir Inc. Methods and compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer
US20190177391A1 (en) 2016-03-31 2019-06-13 Baylor Research Institute Angiopoietin-like protein 8 (angptl8)
AU2017290805B2 (en) 2016-07-01 2023-11-16 Research Development Foundation Elimination of proliferating cells from stem cell-derived grafts
KR20190112263A (ko) 2016-12-12 2019-10-04 멀티비르 인코포레이티드 암 및 감염성 질환의 치료 및 예방을 위한 바이러스 유전자 치료요법 및 면역 체크포인트 억제제를 포함하는 방법 및 조성물
CN111566212A (zh) 2017-11-03 2020-08-21 因特尔纳技术有限公司 miRNA分子,等同物,安塔够妙或其来源用于治疗和/或诊断与神经元缺陷相关的病症和/或疾病或用于神经元生成和/或再生
WO2020036635A2 (en) 2018-03-19 2020-02-20 Multivir Inc. Methods and compositions comprising tumor suppressor gene therapy and cd122/cd132 agonists for the treatment of cancer
EP4275684A1 (en) 2018-05-25 2023-11-15 Arca Biopharma, Inc. Methods and compositions involving bucindolol for the treatment of atrial fibrillation
CN112146967A (zh) * 2019-06-28 2020-12-29 Fei 公司 用于制备和递送用于带电粒子分析的生物样品的系统和方法
WO2021113644A1 (en) 2019-12-05 2021-06-10 Multivir Inc. Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer
CA3214688A1 (en) 2021-04-08 2022-10-13 Andrzej KROLEWSKI Methods of diagnosing and predicting renal decline

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4297387A (en) * 1980-06-04 1981-10-27 Battelle Development Corporation Cubic boron nitride preparation
US4452679A (en) * 1981-10-07 1984-06-05 Becton Dickinson And Company Substrate with chemically modified surface and method of manufacture thereof
IL71530A (en) * 1984-04-12 1987-09-16 Univ Ramot Method and apparatus for surface-treating workpieces
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPS60225422A (ja) * 1984-04-24 1985-11-09 Hitachi Ltd 薄膜形成方法およびその装置
US4670064A (en) * 1985-04-10 1987-06-02 Eaton Corporation Generating high purity ions by non-thermal excimer laser processing
JPH0658909B2 (ja) * 1985-07-15 1994-08-03 株式会社日立製作所 低温プラズマによる成膜方法及び装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US4992298A (en) * 1988-10-11 1991-02-12 Beamalloy Corporation Dual ion beam ballistic alloying process
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5534311A (en) * 1995-05-31 1996-07-09 The United States Of America As Represented By The Secretary Of The Navy Production of structures by electrostatically-focused deposition

Also Published As

Publication number Publication date
EP0625218B1 (de) 1996-06-26
US5645897A (en) 1997-07-08
EP0625218A1 (de) 1994-11-23
AU3452393A (en) 1993-09-03
WO1993016213A1 (de) 1993-08-19
DE4204650C1 (https=) 1993-07-08

Similar Documents

Publication Publication Date Title
JPH07503761A (ja) 高荷電イオンを用いた表面に対するガスもしくは蒸気の物理化学反応による表面改質方法と装置
US10998167B2 (en) Ion beam etch without need for wafer tilt or rotation
US6207282B1 (en) Substrate surface treatment method
JP4097695B2 (ja) 平行イオン光学素子および高電流低エネルギイオンビーム装置
US9070556B2 (en) Patterning of nanostructures
US8367525B2 (en) Rapid patterning of nanostructures
TWI605542B (zh) 碳沉積-蝕刻-灰化間隙塡充處理
US7094702B2 (en) Layer-by-layer etching apparatus using neutral beam and method of etching using the same
CN102414345B (zh) 制备超高温氢分子的方法和使用超高温氢分子选择性断裂在基质表面中或基质表面上的分子的C-H和/或Si-H键的方法
JP2007277708A (ja) 成膜装置および成膜方法
US6101972A (en) Plasma processing system and method
JP2019114692A (ja) 成膜方法
TW201933479A (zh) 成膜方法
JPH06275545A (ja) ガスクラスターイオン援用による化合物薄膜の 形成方法
KR100445105B1 (ko) 가스 클러스터 이온빔을 이용한 아이.티.오 박막 표면처리시스템 및 그 방법
JP2002289582A (ja) 中性粒子ビーム処理装置
CN100517553C (zh) 用于膨胀热等离子体的电感耦合的系统和方法
Kolpakov et al. Off-Electrode Plasma of High-Voltage Gas Discharge for Micro-and Nanotechnology Problems
JP2963116B2 (ja) プラズマ処理方法およびプラズマ処理装置
WO2026038448A1 (ja) 基板処理方法及び基板処理装置
JPH0254758A (ja) 薄膜形成装置
JP2003055770A (ja) 直流グロー放電法による陽イオンビームの抽出と照射の応用装置
JPH10112426A (ja) 中性アルゴンビームを用いた基体表面処理方法
JP2004124205A (ja) 堆積膜形成方法