AU3452393A - Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions - Google Patents

Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions

Info

Publication number
AU3452393A
AU3452393A AU34523/93A AU3452393A AU3452393A AU 3452393 A AU3452393 A AU 3452393A AU 34523/93 A AU34523/93 A AU 34523/93A AU 3452393 A AU3452393 A AU 3452393A AU 3452393 A AU3452393 A AU 3452393A
Authority
AU
Australia
Prior art keywords
vapours
physico
gases
highly
modification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU34523/93A
Other languages
English (en)
Inventor
Jurgen Andra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HELMUT HOFFMEISTER
Original Assignee
HELMUT HOFFMEISTER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HELMUT HOFFMEISTER filed Critical HELMUT HOFFMEISTER
Publication of AU3452393A publication Critical patent/AU3452393A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
AU34523/93A 1992-02-15 1993-01-30 Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions Abandoned AU3452393A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4204650A DE4204650C1 (https=) 1992-02-15 1992-02-15
DE4204650 1992-02-15

Publications (1)

Publication Number Publication Date
AU3452393A true AU3452393A (en) 1993-09-03

Family

ID=6451865

Family Applications (1)

Application Number Title Priority Date Filing Date
AU34523/93A Abandoned AU3452393A (en) 1992-02-15 1993-01-30 Process and device for surface-modification by physico-chemical reactions of gases or vapours on surfaces, using highly-charged ions

Country Status (6)

Country Link
US (1) US5645897A (https=)
EP (1) EP0625218B1 (https=)
JP (1) JPH07503761A (https=)
AU (1) AU3452393A (https=)
DE (1) DE4204650C1 (https=)
WO (1) WO1993016213A1 (https=)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976992A (en) * 1993-09-27 1999-11-02 Kabushiki Kaisha Toshiba Method of supplying excited oxygen
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
US6878417B2 (en) 1997-11-12 2005-04-12 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6319566B1 (en) 1997-11-12 2001-11-20 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6156393A (en) * 1997-11-12 2000-12-05 John C. Polanyi Method of molecular-scale pattern imprinting at surfaces
US6921722B2 (en) * 2000-05-30 2005-07-26 Ebara Corporation Coating, modification and etching of substrate surface with particle beam irradiation of the same
US7575924B2 (en) 2000-11-13 2009-08-18 Research Development Foundation Methods and compositions relating to improved lentiviral vectors and their applications
US20020183271A1 (en) * 2000-12-07 2002-12-05 Sunil Chada Methods of treatment involving human MDA-7
EP2319936A3 (en) 2001-02-15 2012-10-17 The University of Chicago Yeast screens for agents affecting protein folding
EP1412493B1 (en) 2001-08-02 2011-10-05 Institut Clayton De La Recherche Methods and compositions relating to improved lentiviral vector production systems
EP1438075A4 (en) 2001-10-02 2006-04-19 Inst Clayton De La Rech METHOD AND COMPOSITIONS ASSOCIATED WITH LENTIVIRAL VECTORS WITH LIMITED EXPRESSION AND ITS APPLICATIONS
DE10149588B4 (de) * 2001-10-08 2017-09-07 Oerlikon Trading Ag, Trübbach Verfahren zur Diamantbeschichtung von Substraten
MXPA04004194A (es) * 2001-11-02 2005-03-31 Rice University Sistema de recirculacion para la manipulacion de disponibilidad de nadh intracelular.
US20060009409A1 (en) 2002-02-01 2006-01-12 Woolf Tod M Double-stranded oligonucleotides
US20030166282A1 (en) * 2002-02-01 2003-09-04 David Brown High potency siRNAS for reducing the expression of target genes
EP2213737B1 (en) 2002-02-01 2012-11-07 Life Technologies Corporation Double-stranded oligonucleotides
US20030157269A1 (en) * 2002-02-20 2003-08-21 University Of Washington Method and apparatus for precision coating of molecules on the surfaces of materials and devices
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
DE10208043B4 (de) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Materialbearbeitungssystem und Materialbearbeitungsverfahren
JP2005533000A (ja) * 2002-03-05 2005-11-04 ボード　オブ　リージェンツ，　ザ　ユニバーシティ　オブ　テキサス　システム Ｍｄａ−７に関与する免疫誘導を増強する方法
US7052840B2 (en) * 2002-04-03 2006-05-30 Capitol Genomix, Inc. Reversible association of nucleic acid with a carboxylated substrate
US8338168B2 (en) * 2002-04-26 2012-12-25 Institut National De La Sante Et De La Recherche Medicale (Inserm) Chimeric glycoproteins and pseudotyped lentiviral vectors
US7498066B2 (en) 2002-05-08 2009-03-03 Btu International Inc. Plasma-assisted enhanced coating
US7432470B2 (en) 2002-05-08 2008-10-07 Btu International, Inc. Surface cleaning and sterilization
US7445817B2 (en) 2002-05-08 2008-11-04 Btu International Inc. Plasma-assisted formation of carbon structures
US7465362B2 (en) 2002-05-08 2008-12-16 Btu International, Inc. Plasma-assisted nitrogen surface-treatment
US7638727B2 (en) 2002-05-08 2009-12-29 Btu International Inc. Plasma-assisted heat treatment
US7560657B2 (en) 2002-05-08 2009-07-14 Btu International Inc. Plasma-assisted processing in a manufacturing line
WO2003096749A1 (en) 2002-05-08 2003-11-20 Dana Corporation Plasma-assisted heat treatment
US7497922B2 (en) 2002-05-08 2009-03-03 Btu International, Inc. Plasma-assisted gas production
US7494904B2 (en) 2002-05-08 2009-02-24 Btu International, Inc. Plasma-assisted doping
US20100075423A1 (en) * 2002-06-12 2010-03-25 Life Technologies Corporation Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference
AU2003276666A1 (en) * 2002-06-12 2003-12-31 Ambion, Inc. Methods and compositions relating to polypeptides with rnase iii domains that mediate rna interference
US20040248094A1 (en) * 2002-06-12 2004-12-09 Ford Lance P. Methods and compositions relating to labeled RNA molecules that reduce gene expression
CN1759182A (zh) * 2002-11-22 2006-04-12 克雷顿研究院 调节基因的组合物和系统
US7189940B2 (en) 2002-12-04 2007-03-13 Btu International Inc. Plasma-assisted melting
US20040248798A1 (en) 2003-02-14 2004-12-09 Peter Sutovsky Contraceptive methods and compositions related to proteasomal interference
EP1603943A2 (en) * 2003-03-03 2005-12-14 Board of Regents, The University of Texas System Methods and compositions involving mda-7
CA2548220A1 (en) * 2003-12-01 2005-09-09 Introgen Therapeutics, Inc. Use of mda-7 to inhibit infection by pathogenic organisms
US20070281041A1 (en) * 2004-03-02 2007-12-06 Introgen Therapeutics, Inc. Compositions and Methods Involving MDA-7 for the Treatment of Cancer
EP2290071B1 (en) 2004-05-28 2014-12-31 Asuragen, Inc. Methods and compositions involving microRNA
EP1802775B1 (en) 2004-09-14 2010-05-26 The Regents of the University of Colorado Method for treatment with bucindolol based on genetic targeting
CA2857881A1 (en) 2004-11-12 2006-12-28 Asuragen, Inc. Methods and compositions involving mirna and mirna inhibitor molecules
KR20060055681A (ko) * 2004-11-18 2006-05-24 삼성전자주식회사 이온빔 보조 스퍼터링 증착장치
US20060142228A1 (en) * 2004-12-23 2006-06-29 Ambion, Inc. Methods and compositions concerning siRNA's as mediators of RNA interference
CN101166539B (zh) * 2005-02-08 2012-01-04 得克萨斯大学体系董事会 用于治疗癌症的涉及mda-7的组合物和方法
EP1871913A2 (en) * 2005-03-25 2008-01-02 Ambion, Inc. Methods and compositions for depleting abundant rna transcripts
WO2007092944A2 (en) * 2006-02-08 2007-08-16 Introgen Therapeutics, Inc. Compositions and methods involving gene therapy and proteasome modulation
WO2008036765A2 (en) 2006-09-19 2008-03-27 Asuragen, Inc. Micrornas differentially expressed in pancreatic diseases and uses thereof
DE102007054074A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System zum Bearbeiten eines Objekts
CA2711499C (en) 2008-01-10 2018-09-25 Research Development Foundation Vaccines and diagnostics for the ehrlichioses
MX2010008168A (es) 2008-01-25 2011-02-24 P53 Inc Biomarcadores p53.
US20090208672A1 (en) * 2008-01-30 2009-08-20 Polanyi John C Method of linear patterning at surfaces
US8258111B2 (en) 2008-05-08 2012-09-04 The Johns Hopkins University Compositions and methods related to miRNA modulation of neovascularization or angiogenesis
US20100135904A1 (en) 2008-11-07 2010-06-03 Research Development Foundation Compositions and methods for the inhibition of cripto / grp78 complex formation and signaling
EP2370568B1 (en) 2008-12-10 2017-07-19 Dana-Farber Cancer Institute, Inc. Mek mutations conferring resistance to mek inhibitors
US20110045080A1 (en) * 2009-03-24 2011-02-24 William Marsh Rice University Single-Walled Carbon Nanotube/Bioactive Substance Complexes and Methods Related Thereto
EP2449104B1 (en) 2009-06-29 2014-06-04 Luminex Corporation Chimeric primers with hairpin conformations and methods of using same
WO2011025905A1 (en) 2009-08-28 2011-03-03 Research Development Foundation Urocortin 2 analogs and uses thereof
US9512481B2 (en) 2009-09-11 2016-12-06 The Regents Of The University Of Colorado, A Body Corporate Polymorphisms in the PDE3A gene
US20130131161A1 (en) 2009-12-23 2013-05-23 Michael R. Bristow Methods and compositions for cardiovascular diseases and conditions
EP3028699B1 (en) 2010-02-25 2018-03-21 Dana-Farber Cancer Institute, Inc. Braf mutations conferring resistance to braf inhibitors
ES2631458T3 (es) 2010-03-04 2017-08-31 Interna Technologies B.V. Molécula de ARNmi definida por su fuente y sus usos terapéuticos en el cáncer asociado a la EMT
JP5908466B2 (ja) 2010-06-09 2016-04-26 デイナ ファーバー キャンサー インスティチュート，インコーポレイテッド Ｒａｆ及びｍｅｋ阻害剤に対する耐性を与えるｍｅｋ１変異
NZ704322A (en) 2010-07-06 2016-07-29 Interna Technologies Bv Mirna and its diagnostic and therapeutic uses in diseases or conditions associated with melanoma, or in diseases or conditions associated with activated braf pathway
EP2772550B1 (en) 2010-11-17 2017-03-29 Interpace Diagnostics, LLC Mirnas as biomarkers for distinguishing benign from malignant thyroid neoplasms
EP2474617A1 (en) 2011-01-11 2012-07-11 InteRNA Technologies BV Mir for treating neo-angiogenesis
JP2014506791A (ja) 2011-02-03 2014-03-20 マーナ セラピューティクス インコーポレイテッド ｍｉＲ−３４の合成模倣体
CN103459598B (zh) 2011-02-03 2016-08-10 米尔纳医疗股份有限公司 Mir-124的合成模拟物
WO2013040251A2 (en) 2011-09-13 2013-03-21 Asurgen, Inc. Methods and compositions involving mir-135b for distinguishing pancreatic cancer from benign pancreatic disease
WO2013063519A1 (en) 2011-10-26 2013-05-02 Asuragen, Inc. Methods and compositions involving mirna expression levels for distinguishing pancreatic cysts
ES2886147T3 (es) 2011-12-22 2021-12-16 Interna Tech B V MiARN para el tratamiento del cáncer de cabeza y de cuello
US9169567B2 (en) 2012-03-30 2015-10-27 General Electric Company Components having tab members
US9587632B2 (en) 2012-03-30 2017-03-07 General Electric Company Thermally-controlled component and thermal control process
US9671030B2 (en) 2012-03-30 2017-06-06 General Electric Company Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery
WO2014045126A2 (en) 2012-09-18 2014-03-27 Uti Limited Partnership Treatment of pain by inhibition of usp5 de-ubiquitinase
WO2014055117A1 (en) 2012-10-04 2014-04-10 Asuragen, Inc. Diagnostic mirnas for differential diagnosis of incidental pancreatic cystic lesions
US10201556B2 (en) 2012-11-06 2019-02-12 Interna Technologies B.V. Combination for use in treating diseases or conditions associated with melanoma, or treating diseases or conditions associated with activated B-raf pathway
US10125373B2 (en) 2013-01-22 2018-11-13 Arizona Board Of Regents On Behalf Of Arizona State University Geminiviral vector for expression of rituximab
CN105143470B (zh) 2013-02-28 2020-06-09 德克萨斯大学系统董事会 用于将癌症分类为易感于tmepai定向疗法以及治疗所述癌症的方法
WO2014144666A2 (en) 2013-03-15 2014-09-18 The University Of Chicago Methods and compositions related to t-cell activity
EP3065706A4 (en) 2013-11-08 2017-11-29 Baylor Research Institute Nuclear localization of glp-1 stimulates myocardial regeneration and reverses heart failure
EP3259346B1 (en) 2015-02-20 2024-08-07 Baylor College of Medicine P63 inactivation for the treatment of heart failure
US20190038713A1 (en) 2015-11-07 2019-02-07 Multivir Inc. Compositions comprising tumor suppressor gene therapy and immune checkpoint blockade for the treatment of cancer
WO2017168348A1 (en) 2016-03-31 2017-10-05 Baylor Research Institute Angiopoietin-like protein 8 (angptl8)
EP3478325B1 (en) 2016-07-01 2024-07-17 Research Development Foundation Elimination of proliferating cells from stem cell-derived grafts
WO2018111902A1 (en) 2016-12-12 2018-06-21 Multivir Inc. Methods and compositions comprising viral gene therapy and an immune checkpoint inhibitor for treatment and prevention of cancer and infectious diseases
US11497762B2 (en) 2017-11-03 2022-11-15 Interna Technologies B.V. MiRNA molecule, equivalent, antagomir, or source thereof for treating and/or diagnosing a condition and/or a disease associated with neuronal deficiency or for neuronal (re)generation
EP3768698B1 (en) 2018-03-19 2025-02-12 MultiVir Inc. Methods and compositions comprising tumor suppressor gene therapy and cd122/cd132 agonists for the treatment of cancer
CN116585308B (zh) 2018-05-25 2025-10-28 Arca生物制药有限公司 涉及布新洛尔治疗心房颤动的方法和组合物
CN112146967A (zh) * 2019-06-28 2020-12-29 Fei 公司 用于制备和递送用于带电粒子分析的生物样品的系统和方法
WO2021113644A1 (en) 2019-12-05 2021-06-10 Multivir Inc. Combinations comprising a cd8+ t cell enhancer, an immune checkpoint inhibitor and radiotherapy for targeted and abscopal effects for the treatment of cancer
JP2024516548A (ja) 2021-04-08 2024-04-16 ジョスリン ダイアビーティス センター インコーポレイテッド 腎機能低下の診断及び予測の方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates
US4297387A (en) * 1980-06-04 1981-10-27 Battelle Development Corporation Cubic boron nitride preparation
US4452679A (en) * 1981-10-07 1984-06-05 Becton Dickinson And Company Substrate with chemically modified surface and method of manufacture thereof
IL71530A (en) * 1984-04-12 1987-09-16 Univ Ramot Method and apparatus for surface-treating workpieces
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
JPS60225422A (ja) * 1984-04-24 1985-11-09 Hitachi Ltd 薄膜形成方法およびその装置
US4670064A (en) * 1985-04-10 1987-06-02 Eaton Corporation Generating high purity ions by non-thermal excimer laser processing
JPH0658909B2 (ja) * 1985-07-15 1994-08-03 株式会社日立製作所 低温プラズマによる成膜方法及び装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
US4987007A (en) * 1988-04-18 1991-01-22 Board Of Regents, The University Of Texas System Method and apparatus for producing a layer of material from a laser ion source
US4992298A (en) * 1988-10-11 1991-02-12 Beamalloy Corporation Dual ion beam ballistic alloying process
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH03111578A (ja) * 1989-06-29 1991-05-13 Toshiba Corp 薄膜形成方法及び薄膜形成装置
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5534311A (en) * 1995-05-31 1996-07-09 The United States Of America As Represented By The Secretary Of The Navy Production of structures by electrostatically-focused deposition

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EP0625218A1 (de) 1994-11-23
WO1993016213A1 (de) 1993-08-19
JPH07503761A (ja) 1995-04-20
EP0625218B1 (de) 1996-06-26
US5645897A (en) 1997-07-08
DE4204650C1 (https=) 1993-07-08

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