JPH0749798Y2 - Ｍｏｓ集積回路 - Google Patents

Ｍｏｓ集積回路

Info

Publication number
JPH0749798Y2
JPH0749798Y2 JP1988008659U JP865988U JPH0749798Y2 JP H0749798 Y2 JPH0749798 Y2 JP H0749798Y2 JP 1988008659 U JP1988008659 U JP 1988008659U JP 865988 U JP865988 U JP 865988U JP H0749798 Y2 JPH0749798 Y2 JP H0749798Y2
Authority
JP
Japan
Prior art keywords
integrated circuit
diffusion layer
mos integrated
bonding pad
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988008659U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01113366U (enExample
Inventor
純一 大森
Original Assignee
日本電気アイシーマイコンシステム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気アイシーマイコンシステム株式会社 filed Critical 日本電気アイシーマイコンシステム株式会社
Priority to JP1988008659U priority Critical patent/JPH0749798Y2/ja
Publication of JPH01113366U publication Critical patent/JPH01113366U/ja
Application granted granted Critical
Publication of JPH0749798Y2 publication Critical patent/JPH0749798Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H10W72/90—
    • H10W72/9232—
    • H10W72/932—
    • H10W72/934—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP1988008659U 1988-01-25 1988-01-25 Ｍｏｓ集積回路 Expired - Lifetime JPH0749798Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988008659U JPH0749798Y2 (ja) 1988-01-25 1988-01-25 Ｍｏｓ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988008659U JPH0749798Y2 (ja) 1988-01-25 1988-01-25 Ｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPH01113366U JPH01113366U (enExample) 1989-07-31
JPH0749798Y2 true JPH0749798Y2 (ja) 1995-11-13

Family

ID=31214733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988008659U Expired - Lifetime JPH0749798Y2 (ja) 1988-01-25 1988-01-25 Ｍｏｓ集積回路

Country Status (1)

Country Link
JP (1) JPH0749798Y2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972206A (zh) * 2013-02-06 2014-08-06 精工电子有限公司 半导体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103972206A (zh) * 2013-02-06 2014-08-06 精工电子有限公司 半导体装置
JP2014154640A (ja) * 2013-02-06 2014-08-25 Seiko Instruments Inc 半導体装置
CN103972206B (zh) * 2013-02-06 2019-01-25 艾普凌科有限公司 半导体装置

Also Published As

Publication number Publication date
JPH01113366U (enExample) 1989-07-31

Similar Documents

Publication Publication Date Title
EP0291014A2 (en) Semiconductor device in which wiring layer is formed below bonding pad
JPH0582585A (ja) 半導体装置
JPH0238446Y2 (enExample)
JP2718854B2 (ja) 半導体装置
JPH0749798Y2 (ja) Ｍｏｓ集積回路
JPH08125184A (ja) セルストラクチャを有するパワー半導体素子およびその製造方法
JPH05243482A (ja) 半導体集積回路
EP0337482B1 (en) Semiconducteur protection device
JPH01123440A (ja) 半導体装置
JP3213507B2 (ja) 半導体装置
JP2674169B2 (ja) 半導体集積回路装置
JPH06326236A (ja) 樹脂封止型半導体装置
JP2525558Y2 (ja) 半導体装置
JP2819614B2 (ja) 樹脂封止型半導体装置
JP2680869B2 (ja) 半導体装置
JPH0727187Y2 (ja) Ｉｃカード用ｉｃモジュール
JP2806538B2 (ja) 集積回路装置
JPH07122706A (ja) 保護素子付きｍｏｓ ｆｅｔ
JPH027447A (ja) 樹脂封止型半導体装置
JPH02205355A (ja) 半導体集積回路装置
JP2730174B2 (ja) 入力保護装置
JP2596246B2 (ja) 半導体集積回路装置
JPH0529138B2 (enExample)
JPH025416A (ja) 半導体集積回路装置
JPS61154054A (ja) 半導体装置