JPH0742138B2 - 半導体をボンデイングするペ−スト - Google Patents

半導体をボンデイングするペ−スト

Info

Publication number
JPH0742138B2
JPH0742138B2 JP61217868A JP21786886A JPH0742138B2 JP H0742138 B2 JPH0742138 B2 JP H0742138B2 JP 61217868 A JP61217868 A JP 61217868A JP 21786886 A JP21786886 A JP 21786886A JP H0742138 B2 JPH0742138 B2 JP H0742138B2
Authority
JP
Japan
Prior art keywords
weight
oxide
fluoride
glass
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61217868A
Other languages
English (en)
Other versions
JPS62119139A (ja
Inventor
モーリス・イー・ドウメスニル
カール・シユタルツ
レオニード・フインケルシユタイン
Original Assignee
デメトロン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング
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Application filed by デメトロン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング filed Critical デメトロン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング
Publication of JPS62119139A publication Critical patent/JPS62119139A/ja
Publication of JPH0742138B2 publication Critical patent/JPH0742138B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C03C8/245—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders containing more than 50% lead oxide, by weight
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
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    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C04B35/63424—Polyacrylates; Polymethacrylates
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Description

【発明の詳細な説明】 産業上の利用分野 本発明は、銀粉末と低融点のガラス粉末の混合物75〜85
重量％、及びガラス軟化点未満で熱分解する樹脂１〜10
重量％を含有する有機溶剤15〜25重量％から成り、その
際銀とガラスとの重量比が2:1〜9:1である、半導体、特
にシリコンから成る半導体をボンディングするペースト
に関する。
従来の技術 半導体、特にシリコン半導体は、たいていの場合セラミ
ック基体と結合され、該基体は金属化されていてもよ
い。このためには最近では、微粉末化された銀及びガラ
ス粉末から成るペーストが、溶剤及び熱分解性の樹脂と
混合されて使用される。このペーストは、セラミック基
体に薄い層で施され、それに半導体を載せ、次いでその
アセンプリを400℃より高い温度に加熱される、その際
溶剤と樹脂は飛散し、ガラスは軟化しかつ銀粉末と一緒
にセラミック基体と半導体との間の固着結合を形成す
る。
ドイツ連邦共和国特許公開第3227815号明細書から、微
粉末化銀20〜95重量％と低融点のガラス粉末５〜80重量
％との混合物75〜85重量％及び有機溶剤15〜25重量％か
ら成る、セラミック基体にシリコン半導体をボンディン
グする金属化ペーストが公知である。該使用ガラスは、
主として酸化鉛95〜96重量％、酸化ケイ素0.25〜2.5重
量％、その残りの酸化ホウ素から成る。このガラスは32
5〜425℃の軟化点を有する。シリコンウエハとセラミッ
ク基体との結合は、425〜525℃、特に430℃で行われ
る。
この結合法にとって重要なことは、基体に対する半導体
の接着強度が十分であること及び半導体内及び半導体と
セラミック基体との間に熱応力が発生することが回避さ
れることにある。これらの応力は、熱処理温度を低く保
つことができる程に、益々小さくなる。該応力は、特に
半導体ウエハが大きくかつセラミック基体が金めっきさ
れている際に生じる。これらの金層は一般にニッケル中
間層上に施されかつ430℃で既に金内への著しいニッケ
ル拡散が起こる。従って、430℃以上の作業温度はでき
るだけ避けるべきである。
発明が解決しようとする問題点 本発明の課題は、できるだけ低い熱処理温度で半導体と
セラミック基体との間の最適な接着強度を提供する。銀
粉末と低融点のガラス粉末の混合物75〜85重量％、及び
ガラス軟化点未満で熱分解する樹脂１〜10重量％を含有
する有機溶剤15〜25重量％から成り、その際銀とガラス
との重量比が2:1〜9:1である、半導体、特にシリコンか
ら成る半導体をボンディングするペーストを提供するこ
とであった。
問題点を解決するための手段 前記課題は、冒頭に記載した形式のペーストにおいて、
第１番目の発明によれば、ガラス粉末が酸化鉛75〜85重
量％、酸化ホウ素８〜15重量％、酸化ケイ素0.75〜2.5
重量％、酸化銅0.5〜5.5重量％、及びその残りとしての
非揮発性フッ化金属から成り、その際フッ化金属の量
は、酸化銅Cu2Oとフッ化金属のフッ化物含量とのモル比
が1:0.25〜1:10であるように選択されており、かつ260
〜280℃の軟化温度を有することにより、並びに第２番
目の発明によれば、ガラス粉末が、酸化鉛75〜85重量
％、酸化ホウ素８〜15重量％、酸化ケイ素0.75〜2.5重
量％、酸化銅0.5〜5.5重量％、並びに酸化亜鉛10重量％
以下、酸化ビスマス５重量％以下及び酸化アルミニウム
３重量％以下から選択される成分の１種以上、及びその
残りとしての非揮発性フッ化金属から成り、その際フッ
化金属の量は、酸化銅Cu2Oとフッ化金属のフッ化物含量
とのモル比が1:0.25〜1:10であるように選択されてお
り、かつ260〜280℃の軟化温度を有することにより解決
される。
ガラス粉末は、酸化鉛75〜85重量％、酸化ホウ素８〜15
重量％、酸化ケイ素0.75〜2.5重量％、酸化ビスマス１
〜５重量％、酸化銅0.5〜5.5重量％、並びに酸化亜鉛８
重量％以下及び酸化アルミニウム３重量％以下から成る
成分の両者又はいずれか一方、及びその残りのフッ化
鉛、フッ化銅及びフッ化亜鉛の１種以上から成り、その
際酸化銅とフッ化金属のフッ化物含量とのモル比が1:0.
25〜1:10であるのが有利である。
銀粉末は球状又は板片状粒子もしくはその混合物の形で
存在することができる。該粉末は有利には比表面積0.3
〜1.3m2/g及びタップ密度2.4〜3.4g/cm3を有する。ガラ
ス成分としては、以下の組成を有するガラスが有利であ
ることが立証された。
ａ） PbO 77.9％、ZnO 7.2％、B2O3 8.2％、SiO2 0.9
％、Cu2O 2.2％、PbF2としてのフッ化物0.4％、Bi2O3
3.2％； ｂ） PbO 79.2％、ZnO 5.5％、B2O3 9.2％、SiO2 0.9
％、Cu2O 1.4％、PbF2としてのF0.8、Bi2O3 3.0％； ｃ） PbO 80.8％、ZnO 6.8％、B2O3 8.7％、SiO2 1.0
％、Cu2O 2.3％、PbF2としてのF 0.4％； ｄ） PbO 81.6％、ZnO 3.1％、B2O3 11.5％、SiO2 1.0
％、Cu2O 2.1％、PbF2としてのF 0.7％ 銀とガラスとの重量比は、2:1〜9:1、有利には3:1〜5:1
の範囲内にある。銀対ガラスの重量比は、特に4:1であ
るのが有利であることが立証された。使用ガラスは430
℃の温度で15分間の加熱時間で失透現象を示さない。
セラミック基体上に銀／ガラスペーストを施すには、銀
粉末とガラス粉末の混合物を265℃未満の沸点を有する
有機溶剤中に懸濁させる。有機溶剤としては、例えばテ
レピン油、ジエチレングリコールエーテル（カルビトー
ル:Carbitole）もしくはそのエステル、又はエステルア
ルコール例えば2,2,4-トリメチル‐ペンタンジオール‐
1,3-モノイソブチレートを使用することができる。100
〜265℃の沸点を有する別の有機溶剤を使用することも
できる。
使用ガラスの軟化点未満、即ち280℃未満で熱分解する
樹脂を、有機溶剤中に、一般に１〜10重量％の量で溶か
す。樹脂としては、例えばニトロセルロースを１〜２％
の量で、又はエチル‐又はブチルメタクリレートを６〜
10％の量で使用することができる。樹脂は有機ビヒクル
の粘度を高め、ひいてはペースト内での粉末の沈降を阻
止する。
少量のペーストを例えば注入器を用いてセラミック基体
に小さな球の形で施しかつ半導体を押し付ける。
次いで、このアセンブリを慎重に75〜150℃で、溶剤が
完全に放出されるまで乾燥させる。次いで、400℃未
満、有利には380℃の温度に加熱する、この際に樹脂は
分解しかつセラミック基体と半導体との間の固定結合が
行われる。
球状のペースト塗布の代わりに、セラミック基体にペー
スト層を施し、その上に半導体を載せることもできる。
実施例 次に、実施例により本発明を詳細に説明する。
酸化鉛415g、フッ化鉛30g、酸化亜鉛30g、ホウ酸80g、
酸化ケイ素5g、酸化銅12g、酸化ビスマス8g及び水酸化
アルミニウム10gを混合しかつ白金坩堝中で1100℃で30
分間熔融させた。引き続き、該熔融物をステンレスロー
ルを介してキャストしかつ生成したガラス板片をセラミ
ックボールミル内で微粉末化した。このガラス粉末20g
を銀粉末（タップ密度g/cm3、比表面積m2/g）80gと混合
した。ニトロセルロース（分子量約2000）0.3gを溶かし
たブチルカルビトール30gを銀／ガラス粉末混合物に加
えかつこれをペーストに加工した。
公知技術に基づく類似したペーストを、銀66.4％、ガラ
ス（ドイツ連邦共和国特許公開第3227815号明細書記載
に基づく組成物）16.6％、ニトロセルロース１％及びブ
チルカルビトール16％から製造した。該生成物はそのガ
ラス成分においてはほぼ本発明のペーストの組成に相当
する。
両者のペーストを、異なった背面被覆が施された同じ大
きさの半導体をセラミック基体に施すために使用した。
セラミック基体は、低い割合（それぞれ約２％）の酸化
ケイ素、二酸化チタン、酸化鉄及び酸化マンガンを有す
る酸化アルミニウム（約92％）から成っていた。結合は
それぞれ380℃及び430℃の熱処理温度で実施した。接着
強度は引張り試験で測定した。結果は以下の表にまとめ
て示す。
銀ガラスから成る結合層の厚さは、総ての場合50〜70μ
ｍ（２〜2.5ミル）であった。
接着強度値から、本発明によるペーストを用いて380℃
の温度で熱処理した際の接着強度はドイツ連邦共和国特
許公開第3227815号明細書に記載のペーストを用いて430
℃の温度で得られた強度と同じか又はそれ以上である。
更に、本発明によるペーストを用いて380℃及び430℃で
熱処理した場合の接着強度はごく僅かに異なっているに
過ぎない。380℃の熱処理の際の半導体と基体との間の
熱応力は、430℃での熱処理とは異なり全く生じなかっ
た。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 レオニード・フインケルシユタイン アメリカ合衆国カリフオルニア・サン・フ ランシスコ・トウエンテイーセブンス・ア ヴエニユー 1643

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】銀粉末と低融点のガラス粉末の混合物75〜
    85重量％、及びガラス軟化点未満で熱分解する樹脂１〜
    10重量％を含有する有機溶剤15〜25重量％から成り、そ
    の際銀とガラスとの重量比が2:1〜9:1である、半導体を
    セラミック基体にボンディングするペーストにおいて、
    ガラス粉末が酸化鉛75〜85重量％、酸化ホウ素８〜15重
    量％、酸化ケイ素0.75〜2.5重量％、酸化銅0.5〜5.5重
    量％、及びその残りとしての非揮発性フッ化金属から成
    り、その際フッ化金属の量は、酸化銅CuO2とフッ化金属
    のフッ化物含量とのモル比が1:0.25〜1:10であるように
    選択されており、かつ260〜280℃の軟化温度を有するこ
    とを特徴とする、半導体をボンディングするペースト。
  2. 【請求項２】銀粉末と低融点のガラス粉末の混合物75〜
    85重量％、及びガラス軟化点未満で熱分解する樹脂１〜
    10重量％を含有する有機溶剤15〜25重量％から成り、そ
    の際銀とガラスとの重量比が2:1〜9:1である、半導体を
    セラミック基体にボンディングするペーストにおいて、
    ガラス粉末が、酸化鉛75〜85重量％、酸化ホウ素８〜15
    重量％、酸化ケイ素0.75〜2.5重量％、酸化銅0.5〜5.5
    重量％、並びに酸化亜鉛10重量％以下、酸化ビスマス５
    重量％以下及び酸化アルミニウム３重量％以下から選択
    される成分の１種以上、及びその残りとしての非揮発性
    フッ化金属から成り、その際フッ化金属の量は、酸化銅
    Cu2Oとフッ化金属のフッ化物含量とのモル比が1:0.25〜
    1:10であるように選択されており、かつ260〜280℃の軟
    化温度を有することを特徴とする、半導体をボンディン
    グするペースト。
  3. 【請求項３】ガラス粉末が、75〜85重量％、酸化ホウ素
    ８〜15重量％、酸化ケイ素0.75〜2.5重量％、酸化ビス
    マス１〜５重量％、酸化銅0.5〜5.5重量％、並びに酸化
    亜鉛８重量％以下及び酸化アルミニウム３重量％以下か
    ら成る成分の両者又はいずれか一方、及びその残りのフ
    ッ化鉛、フッ化銅及びフッ化亜鉛の１種以上から成り、
    その際酸化銅とフッ化金属のフッ化物含量とのモル比が
    1:0.25〜1:10である、特許請求の範囲第１項又は第２項
    記載のペースト。
JP61217868A 1985-09-16 1986-09-16 半導体をボンデイングするペ−スト Expired - Lifetime JPH0742138B2 (ja)

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US776610 1985-09-16
US06/776,610 US4699888A (en) 1985-09-16 1985-09-16 Die/attach composition

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JPS62119139A JPS62119139A (ja) 1987-05-30
JPH0742138B2 true JPH0742138B2 (ja) 1995-05-10

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Also Published As

Publication number Publication date
EP0215462A3 (en) 1988-02-03
US4699888A (en) 1987-10-13
EP0215462B1 (de) 1990-08-22
EP0215462A2 (de) 1987-03-25
DE3673589D1 (de) 1990-09-27
JPS62119139A (ja) 1987-05-30

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