DE4013256C1 - Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powder - Google Patents
Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powderInfo
- Publication number
- DE4013256C1 DE4013256C1 DE19904013256 DE4013256A DE4013256C1 DE 4013256 C1 DE4013256 C1 DE 4013256C1 DE 19904013256 DE19904013256 DE 19904013256 DE 4013256 A DE4013256 A DE 4013256A DE 4013256 C1 DE4013256 C1 DE 4013256C1
- Authority
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- Germany
- Prior art keywords
- glass
- powder
- oxide
- weight
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/12—Silica-free oxide glass compositions
- C03C3/122—Silica-free oxide glass compositions containing oxides of As, Sb, Bi, Mo, W, V, Te as glass formers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Conductive Materials (AREA)
Abstract
Description
Die Erfindung betrifft eine Lotpaste zum Befestigen von elektronischen Komponenten auf Substratmaterialien, bestehend aus 75 bis 90 Gew.-% eines Gemisches aus Silberpulver und einem niedrig schmelzenden Glaspulver, wobei das Gewichtsverhältnis von Silber zu Glas zwischen 2 : 1 und 15 : 1 liegt, und 10 bis 25 Gew.-% eines organischen Lösungsmittels, das 1 bis 20 Gew.-% eines thermisch leicht zersetzbaren Harzes enthält.The invention relates to a solder paste for fastening of electronic components Substrate materials consisting of 75 to 90% by weight a mixture of silver powder and a low melting glass powder, the weight ratio from silver to glass is between 2: 1 and 15: 1, and 10 up to 25% by weight of an organic solvent which 1 up to 20 wt .-% of a thermally easily decomposable Contains resin.
Bei der hermetischen Einhäusung von Siliziumhalbleitern verwendet man in neuerer Zeit silbergefüllte Glaslotpasten, die aus fein verteiltem Silber- und Glaspulver bestehen, vermischt mit einem Lösungsmittel und einem thermisch zersetzbaren Harz. Diese Pasten werden auf Substratmaterialien, wie Glas, Keramik oder Metall, in dünner Schicht aufgebracht, der Halbleiter aufgelegt und dieses Gebilde auf Temperaturen oberhalb 400°C erhitzt, wobei Lösungsmittel und Harz entweichen, das Glas erweicht und zusammen mit dem Silberpulver eine fest haftende Verbindung zwischen der Unterlage und dem Halbleiter herstellt.With the hermetic enclosure of Silicon semiconductors have recently been used silver-filled glass solder pastes made from finely divided Silver and glass powder exist mixed with one Solvent and a thermally decomposable resin. These pastes are applied to substrate materials such as glass, Ceramic or metal, applied in a thin layer, the semiconductor is placed on this structure Temperatures above 400 ° C heated, whereby Solvent and resin escape, the glass softens and together with the silver powder a firmly adhering one Connection between the base and the semiconductor manufactures.
Silbergefüllte Glaslote werden heute vor allem in der Fertigung von CERDIP-Bauelementen (CERDIP = Ceramic Dual Inline Package) und anderen Keramikgehäusen eingesetzt. Silver-filled glass solders are used mainly in the Production of CERDIP components (CERDIP = Ceramic Dual Inline Package) and other ceramic housings used.
Sie finden jedoch auch Verwendung bei der Montage von aktiven und passiven elektronischen Komponenten auf Keramiksubstraten. Silbergefüllte Glaslote sind in den US-PS 44 01 767, US-PS 46 36 254 sowie EP-OS 03 17 694 beschrieben. Die hierin beschriebenen Glaslotpasten bestehen aus Silberpulver und Bleiboratglaspulver, das in einem flüchtigen Bindemittel fein verteilt ist. Die Verbindung zwischen elektronischem Bauteil und Substrat erfolgt mit diesen Pasten bei Brenntemperaturen zwischen 425°C und 525°C, insbesondere bei 430°C.However, they are also used in the assembly of active and passive electronic components Ceramic substrates. Silver-filled glass solders are in the US-PS 44 01 767, US-PS 46 36 254 and EP-OS 03 17 694 described. The glass solder pastes described herein consist of silver powder and lead borate glass powder, the is finely divided in a volatile binder. The Connection between electronic component and Substrate is made with these pastes Firing temperatures between 425 ° C and 525 ° C, especially at 430 ° C.
Diese hohen Brenntemperaturen stellen einen gravierenden Nachteil dar, da die modernen, hochintegrierten Halbleiterbausteine sehr temperaturempfindlich sind und bei hoher Temperaturbelastung Schädigungen erfolgen können. So treten verstärkt Diffusionsprozesse auf dem Halbleiter auf, die die feinen metallischen Leiterbahnen des Halbleiters zerstören können. Des weiteren werden durch hohe Brenntemperaturen Spannungen im Halbleiter induziert, die zu Rissen und Brüchen im IC-Baustein führen können.These high firing temperatures pose a problem serious disadvantage because the modern, highly integrated semiconductor devices very much are temperature sensitive and at high Damage to temperature can occur. So diffusion processes occur increasingly on the semiconductor on the fine metallic conductor tracks of the Can destroy semiconductor. Furthermore, through high firing temperatures voltages in the semiconductor induces cracks and breaks in the IC chip being able to lead.
In der US-PS 46 99 888 und der DE-PS 39 05 276 werden Silberglaslotpasten beschrieben, die für niedrige Brenntemperaturen um 380°C bzw. 365 bis 380°C geeignet sind. Diese Materialien enthalten spezielle modifizierte Bleiboratgläser. Aus der EP-OS 3 23 107 schließlich sind Silberglaslotpasten bekannt, die Bleiphosphatgläser mit Vanadiumpentoxid enthalten und bei Brenntemperaturen von 350°C bis 460°C verwendet werden können. Boratgläser mit Vanadiumpentoxid für Glaslote werden auch in den US-PS 34 80 566 und 34 40 182 benutzt, wobei ebenfalls Brenntemperaturen von mehr als 350°C erforderlich sind. In US-PS 46 99 888 and DE-PS 39 05 276 Silver glass solder pastes described for low Firing temperatures around 380 ° C or 365 to 380 ° C are suitable. These materials contain special ones modified lead borate glasses. From EP-OS 3 23 107 finally, silver glass solder pastes are known which Contain lead glasses with vanadium pentoxide and used at firing temperatures from 350 ° C to 460 ° C can be. Borate glasses with vanadium pentoxide for Glass solders are also described in US Pat. Nos. 34 80 566 and 34 40 182 used, also firing temperatures of more than 350 ° C are required.
Jedoch sind auch diese Brenntemperaturen noch immer zu hoch für den Einsatz bei moderen hochintegrierten und temperatursensitiven Halbleitern.However, these firing temperatures are still too high for use with modern highly integrated and temperature sensitive semiconductors.
Gläser, die Vanadiumpentoxid und Telluroxid enthalten, werden in den DE-AS 10 15 579 und 10 15 580 bzw. der GB-PS 7 46 192 beschrieben, allerdings nicht für Glaslote.Glasses containing vanadium pentoxide and tellurium oxide are in DE-AS 10 15 579 and 10 15 580 and the GB-PS 7 46 192 described, but not for Glass solders.
Es war daher Aufgabe der vorliegenden Erfindung, eine Lotpaste zum Befestigen von elektronischen Komponenten auf Substratmaterialien zu entwickeln, bestehend aus 75 bis 90 Gew.-% eines Gemisches aus Silberpulver und einem niedrig schmelzenden Glaspulver, wobei das Gewichtsverhältnis von Silber zu Glas zwischen 2 : 1 und 15 : 1 liegt, und 10 bis 25 Gew.-% eines organischen Lösungsmittels, das 1 bis 20 Gew.-% eines thermisch leicht zersetzbaren Harzes enthält, welche bei Brenntemperaturen von 300 bis 350°C eingesetzt werden kann und dadurch die Temperaturbelastung der elektronischen Komponenten stark verringert.It was therefore an object of the present invention Solder paste for attaching electronic components to develop on substrate materials consisting of 75 to 90 wt .-% of a mixture of silver powder and a low melting glass powder, the Weight ratio of silver to glass between 2: 1 and 15: 1, and 10 to 25 wt .-% of an organic Solvent containing 1 to 20 wt .-% of a thermal contains easily decomposable resin, which at Firing temperatures of 300 to 350 ° C can be used can and thereby the temperature load of the electronic components greatly reduced.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß das Glaspulver ein Vanadiumoxid-Telluroxid-Glas ist und eine Glasübergangstemperatur von 200 bis 300°C aufweist.This object is achieved in that the glass powder is a vanadium oxide tellurium oxide glass and a glass transition temperature of 200 to 300 ° C having.
Vorzugsweise verwendet man Vanadiumoxid-Telluroxid-Gläser mit Glasübergangstemperaturen von 235 bis 270°C.Preferably used Vanadium oxide tellurium oxide glasses with Glass transition temperatures from 235 to 270 ° C.
Solche Glaspulver besitzen vorteilhafterweise eine Zusammensetzung vonSuch glass powders advantageously have one Composition of
10-80 Gew.-% Vanadinpentoxid (V₂O₅)
10-50 Gew.-% Tellurdioxid (TeO₂)
0-30 Gew.-% Bleioxid (PbO)
0-30 Gew.-% Bariumoxid (BaO)
0-20 Gew.-% Cadmiumoxid (CdO)
0-10 Gew.-% Silberoxid (Ag₂O)10-80% by weight vanadium pentoxide (V₂O₅)
10-50% by weight tellurium dioxide (TeO₂)
0-30% by weight lead oxide (PbO)
0-30% by weight barium oxide (BaO)
0-20% by weight cadmium oxide (CdO)
0-10% by weight silver oxide (Ag₂O)
Zu dieser Grundzusammensetzung sind noch Zusätze von bis zu 5 Gew.-% an B₂O₃, Bi₂O₃, SiO₂, WO₃, MoO₃ und P₂O₅ möglich.There are also additions to this basic composition up to 5 wt .-% of B₂O₃, Bi₂O₃, SiO₂, WO₃, MoO₃ and P₂O₅ possible.
Die erfindungsgemäßen Gläser auf der Basis von Vanadiumpentoxid (V₂O₅) und Tellurdioxid (TeO₂) erzeugen schon bei Brenntemperaturen von 300-350°C in Silberglaslotpasten eine sehr hohe Haftfestigkeit, zeigen ein sehr gutes Benetzungsverhalten auf Keramik und beginnen schon bei Temperaturen von 300°C aufzuschmelzen. Sie sind damit den bisher verwendeten Bleiboratgläsern weit überlegen.The glasses according to the invention based on Vanadium pentoxide (V₂O₅) and tellurium dioxide (TeO₂) generate in at firing temperatures of 300-350 ° C in Silver glass solder pastes have a very high adhesive strength, show very good wetting behavior on ceramics and start at temperatures of 300 ° C to melt. They are the ones used so far Far superior to lead borate glasses.
Die Tabelle zeigt eine Reihe von erfindungsgemäßen Glaszusammensetzungen. Die Gläser wurden in konventioneller Art in Tiegeln bei ca. 900°C erschmolzen, und die Schmelze über Stahlwalzen abgegossen. Anschließend wurden die Glasplättchen in Kugelmühlen gemahlen und kleiner 45 Mikrometer abgesiebt. Die Charakterisierung der Gläser erfolgte in gemahlenem Zustand. Die Glasübergangstemperatur (Tg) sowie der Kristallisationsbeginn wurden mittels Differential-Scanning-Calorimetrie (DSC) bestimmt. Die Heizrate betrug dabei 10°C/min (Luftatmosphäre). Durch den Gehalt an TeO₂ als glasbildendes Oxid kann das Kristallisationsverhalten der Gläser beeinflußt werden. Die Gläser besitzen Glasübergangstemperaturen von 200-300°C, der Kristallisationsbeginn liegt bei 290-350°C. The table shows a number of the invention Glass compositions. The glasses were in conventional in crucibles at approx. 900 ° C melted, and the melt over steel rollers poured. Then the glass plates in Ball mills ground and smaller than 45 microns sieved. The glasses were characterized in the ground state. The glass transition temperature (Tg) and the start of crystallization were determined using Differential scanning calorimetry (DSC) determined. The The heating rate was 10 ° C / min (air atmosphere). The content of TeO₂ as a glass-forming oxide can affects the crystallization behavior of the glasses will. The glasses have glass transition temperatures of 200-300 ° C, the start of crystallization is 290-350 ° C.
Als organisches Lösungsmittel werden solche eingesetzt, die einen Siedebereich von 140 bis 250°C sowie eine Verdunstungszahl (VZ) von 100 bis 5000 besitzen. Höher siedende Glykolester, Alkohole sowie Kohlenwasserstoffe haben sich hier am besten bewährt.Such as organic solvent used with a boiling range of 140 to 250 ° C and an evaporation number (VZ) from 100 to 5000 have. Higher boiling glycol esters, alcohols as well Here, hydrocarbons have proven their worth best.
Zur Viskositätserhöhung wird das Lösungsmittelsystem mit einem organischen, thermisch leicht depolymerisierbaren Harz versetzt. Organische Harze, z. B. Polyacrylate, Ethylcellulosen sowie Nitrocelluloseharze sind hierbei am besten geeignet. Das Lösungsmittel enthält etwa 1-10% des thermisch leicht zersetzbaren Harzes. Neben den Komponenten Silberpulver, Glaspulver, Harz und Lösungsmittel, kann die Lotpaste noch weitere anorganische Zusätze (z. B. Silberoxid, pyrogene Kieselsäuren) oder organische Komponenten (z. B. Thixotropiermittel, Netzmittel) enthalten, die die Haftungs- und Verarbeitungsschaften der Paste verbessern.The solvent system is used to increase the viscosity with an organic, thermally light Depolymerizable resin added. Organic resins, e.g. B. polyacrylates, ethyl celluloses and Nitrocellulose resins are the most suitable. The solvent contains about 1-10% of the thermal easily decomposable resin. In addition to the components Silver powder, glass powder, resin and solvent, can the solder paste and other inorganic additives (e.g. Silver oxide, fumed silica) or organic Components (e.g. thixotropic agents, wetting agents) contain the liability and processing societies improve the paste.
Folgende Beispiele sollen die Erfindung näher erläutern:The following examples are intended to illustrate the invention explain:
1. 12 g des Glaspulvers I (Korngröße <45 micron) werden mit 72 g feinem Silberpulver (plättchenförmig, Stampfdichte 4 g/cm³) und mit 16 g einer Harzlösung, bestehend aus 90% Adipinsäuredimethylester und 10% Acrylatharz (Degalan LP 62/05, Fa. Degussa) vermengt und zu einer Lotpaste verarbeitet. Der Feststoffgehalt dieser Paste beträgt 84%, das Verhältnis Silber/Glas ist 6 : 1. 1. 12 g of glass powder I (grain size <45 micron) with 72 g of fine silver powder (platelet-shaped, tamped density 4 g / cm³) and with 16 g of a resin solution consisting of 90% Dimethyl adipate and 10% acrylic resin (Degalan LP 62/05, Degussa) blended and added processed a solder paste. The solids content this paste is 84%, the ratio Silver / glass is 6: 1.
Siliziumchips der Größe 7,5×7,5 mm (300×300 mil) werden mit dieser Paste aus Keramiksubstrate (92% Al₂O₃) befestigt. Dabei bringt man die Paste mittels einer Dosierspritze auf das Keramiksubstrat auf und drückt den Halbleiterchip vorsichtig in die Paste. Man trocknet die Anordnung für 30 min bei 100°C. Anschließend erfolgt ein Niedertemperatur-Einbrennprozeß in einem Banddurchlaufofen, bei dem die Halbleiter einer Spitzentemperatur von 350°C für 10 min ausgesetzt sind. Die gesamte Durchlaufzeit beträgt ca. 45 min. Nach dem Einbrand weisen die Halbleiter eine sehr gute Haftfestigkeit auf der Keramikunterlage auf.Silicon chips of size 7.5 × 7.5 mm (300 × 300 mils) are used with this Paste made of ceramic substrates (92% Al₂O₃) attached. The paste is brought in using a Dosing syringe on the ceramic substrate and carefully presses the semiconductor chip into the paste. The arrangement is dried at 100 ° C. for 30 minutes. Then there is a Low temperature baking process in one Continuous belt furnace in which the semiconductors are one Exposed peak temperature of 350 ° C for 10 min are. The total throughput time is approx. 45 min. After firing, the semiconductors have a very good adhesive strength on the ceramic base.
Die Werte der Haftfestigkeit, gemessen mit dem sogenannten "stud pull Test" (MIL STD 883, Methode 2027) liegen bei 20 kg (= 44 lbs) und damit weit oberhalb des in der MIL-Norm geforderten Wertes.The values of the adhesive strength, measured with the so-called "stud pull test" (MIL STD 883, method 2027) are 20 kg (= 44 lbs) and thus far above the value required in the MIL standard.
2. Es wird eine Glaslotpaste hergestellt aus 12 g des Glaspulvers II, 72 g feinem Silberpulver (plättchenförmig, Stampfdichte 5 g/cm³) und 16 g einer Harzlösung, bestehend asu 90% Ethylglykolacetat und 10% Acrylatharz (Degalan LP 62/05). Siliziumchips der Größe 10×10 mm werden, wie in Beispiel 1 beschrieben, mit dieser Paste auf Keramiksubstrate (92% Al₂O₃) befestigt. Die Si-Chips besitzen eine vergoldete Rückseite. 2. A glass solder paste is made from 12 g of the Glass powder II, 72 g of fine silver powder (platelet-shaped, tamped density 5 g / cm³) and 16 g a resin solution consisting of 90% Ethyl glycol acetate and 10% acrylic resin (Degalan LP 62/05). Silicon chips size 10 × 10 mm are, as described in Example 1, with this Paste attached to ceramic substrates (92% Al₂O₃). The Si chips have a gold-plated back.
Man trocknet die Anordnung für 30 min bei 100°C. Anschließend erfolgt ein Niedertemperatur-Einbrennprozeß bei 325°C für 15 min. Die Gesamtdurchlaufzeit beträgt ca. 60 min. Nach dem Einbrand weisen die Halbleiter eine Haftfestigkeit von 23 kg (= 50 lbs) im "Stud pull"-Test nach MIL STD 883, Methode 2027 auf. Auch dieser Wert liegt weit oberhalb des nach MIL STD vorgeschriebenen Wertes.The arrangement is dried at 100 ° C. for 30 minutes. Then there is a Low temperature baking process at 325 ° C for 15 minutes. The total throughput time is approx. 60 min. After firing, the semiconductors have a Adhesive strength of 23 kg (= 50 lbs) in Stud pull test according to MIL STD 883, method 2027. This value is also far above that according to MIL STD prescribed value.
Claims (3)
10-80 Gew.-% Vanadiumpentoxid (V₂O₅)
10-50 Gew.-% Tellurdioxid (TeO₂)
0-30 Gew.-% Bleioxid (PbO)
0-30 Gew.-% Bariumoxid (BaO)
0-20 Gew.-% Cadmiumoxid (CdO)
0-10 Gew.-% Silberoxid (Ag₂O)
besitzt.3. solder paste according to claim 1 or 2, characterized in that the glass powder has a composition of:
10-80% by weight vanadium pentoxide (V₂O₅)
10-50% by weight tellurium dioxide (TeO₂)
0-30% by weight lead oxide (PbO)
0-30% by weight barium oxide (BaO)
0-20% by weight cadmium oxide (CdO)
0-10% by weight silver oxide (Ag₂O)
owns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19904013256 DE4013256C1 (en) | 1990-04-26 | 1990-04-26 | Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19904013256 DE4013256C1 (en) | 1990-04-26 | 1990-04-26 | Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4013256C1 true DE4013256C1 (en) | 1991-10-24 |
Family
ID=6405099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19904013256 Expired - Lifetime DE4013256C1 (en) | 1990-04-26 | 1990-04-26 | Solder paste for sticking electrical components on substrates - comprises mixt. of silver powder and low melting glass powder |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE4013256C1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4128804A1 (en) * | 1991-08-30 | 1993-03-04 | Demetron | Lead-free low melting glass - contains silver oxide, vanadium oxide and tellurium oxide, used as soldering paste for electrical components |
| CN101265023B (en) * | 2007-03-15 | 2010-05-26 | 北京印刷学院 | Vanadium-silver low melting glass and conductive slurry containing the glass |
| EP3006414A1 (en) * | 2003-02-19 | 2016-04-13 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB746192A (en) * | 1953-09-14 | 1956-03-14 | British Thomson Houston Co Ltd | Improvements in glass compositions |
| DE1015579B (en) * | 1953-09-14 | 1957-09-12 | British Thomson Houston Co Ltd | Vanadium pentoxide-containing, boron-free glass with relatively low electrical resistance |
| US3440182A (en) * | 1965-07-29 | 1969-04-22 | Du Pont | Copper/vanadium oxide compositions,noble metal metalizing compositions containing vanadium oxide additives,and electrical conductor elements made therewith |
| US3480566A (en) * | 1965-10-22 | 1969-11-25 | Du Pont | Low melting glass and compositions containing the same |
| US4401767A (en) * | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
| US4636254A (en) * | 1985-07-23 | 1987-01-13 | Quantum Materials, Inc. | Silver-glass paste for attachment of silicon die to ceramic substrate |
| US4699888A (en) * | 1985-09-16 | 1987-10-13 | Technology Glass Corporation | Die/attach composition |
| EP0317694A1 (en) * | 1987-11-25 | 1989-05-31 | E.I. Du Pont De Nemours And Company | Die attach adhesive composition |
| EP0323107A2 (en) * | 1987-12-24 | 1989-07-05 | Johnson Matthey Public Limited Company | Bonding paste for electronic components |
| DE3905276C1 (en) * | 1989-02-21 | 1990-05-03 | Demetron Gesellschaft Fuer Elektronik-Werkstoffe Mbh, 6450 Hanau, De |
-
1990
- 1990-04-26 DE DE19904013256 patent/DE4013256C1/en not_active Expired - Lifetime
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB746192A (en) * | 1953-09-14 | 1956-03-14 | British Thomson Houston Co Ltd | Improvements in glass compositions |
| DE1015580B (en) * | 1953-09-14 | 1957-09-12 | British Thomson Houston Co Ltd | Glass with relatively low electrical resistance |
| DE1015579B (en) * | 1953-09-14 | 1957-09-12 | British Thomson Houston Co Ltd | Vanadium pentoxide-containing, boron-free glass with relatively low electrical resistance |
| US3440182A (en) * | 1965-07-29 | 1969-04-22 | Du Pont | Copper/vanadium oxide compositions,noble metal metalizing compositions containing vanadium oxide additives,and electrical conductor elements made therewith |
| US3480566A (en) * | 1965-10-22 | 1969-11-25 | Du Pont | Low melting glass and compositions containing the same |
| US4401767A (en) * | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
| US4636254A (en) * | 1985-07-23 | 1987-01-13 | Quantum Materials, Inc. | Silver-glass paste for attachment of silicon die to ceramic substrate |
| US4699888A (en) * | 1985-09-16 | 1987-10-13 | Technology Glass Corporation | Die/attach composition |
| EP0317694A1 (en) * | 1987-11-25 | 1989-05-31 | E.I. Du Pont De Nemours And Company | Die attach adhesive composition |
| EP0323107A2 (en) * | 1987-12-24 | 1989-07-05 | Johnson Matthey Public Limited Company | Bonding paste for electronic components |
| DE3905276C1 (en) * | 1989-02-21 | 1990-05-03 | Demetron Gesellschaft Fuer Elektronik-Werkstoffe Mbh, 6450 Hanau, De |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4128804A1 (en) * | 1991-08-30 | 1993-03-04 | Demetron | Lead-free low melting glass - contains silver oxide, vanadium oxide and tellurium oxide, used as soldering paste for electrical components |
| EP3006414A1 (en) * | 2003-02-19 | 2016-04-13 | Yamato Electronic Co., Ltd. | Lead-free glass material for use in sealing and, sealed article and method for sealing using the same |
| CN101265023B (en) * | 2007-03-15 | 2010-05-26 | 北京印刷学院 | Vanadium-silver low melting glass and conductive slurry containing the glass |
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