JPH07283441A - Optical semiconductor device and manufacture thereof - Google Patents
Optical semiconductor device and manufacture thereofInfo
- Publication number
- JPH07283441A JPH07283441A JP6077368A JP7736894A JPH07283441A JP H07283441 A JPH07283441 A JP H07283441A JP 6077368 A JP6077368 A JP 6077368A JP 7736894 A JP7736894 A JP 7736894A JP H07283441 A JPH07283441 A JP H07283441A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- heat
- semiconductor element
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＥＤ等の発光半導体
素子又はフォトトランジスタやＣＣＤ等の受光半導体素
子等の光半導体素子を樹脂で封止した光半導体装置及び
光半導体装置製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which a light emitting semiconductor element such as an LED or an optical semiconductor element such as a phototransistor or a phototransistor such as a CCD is sealed with a resin, and a method for manufacturing an optical semiconductor device.
【０００２】[0002]
【従来の技術】従来から光半導体装置は、発光半導体素
子又は受光半導体素子等の光半導体素子をダイパッド部
に搭載し、光半導体素子の各端子をダイパッド部の周囲
に設けられたリード部にボンディングワイヤを介して接
続されたリードフレームを成形金型に投入し、エポキシ
樹脂を用いてキャスティング若しくはトランスファモー
ルドによって封止して形成されている。しかしながら、
エポキシ樹脂等の熱硬化性樹脂は形成時の硬化時間が３
〜５分と長く生産性に劣るという問題があった。そこ
で、硬化時間が短い樹脂として、熱可塑性樹脂を用いる
ことが検討されている。なお、光半導体装置では光透過
部を確保しなければならないため、非結晶性の透明熱可
塑性樹脂を使用する必要がある。2. Description of the Related Art Conventionally, in an optical semiconductor device, an optical semiconductor element such as a light emitting semiconductor element or a light receiving semiconductor element is mounted on a die pad portion, and each terminal of the optical semiconductor element is bonded to a lead portion provided around the die pad portion. It is formed by putting a lead frame connected through a wire into a molding die and sealing the same by casting or transfer molding using an epoxy resin. However,
Thermosetting resin such as epoxy resin takes 3 hours to cure.
There was a problem that productivity was inferior as long as ~ 5 minutes. Therefore, it has been considered to use a thermoplastic resin as the resin having a short curing time. It is necessary to use a non-crystalline transparent thermoplastic resin because it is necessary to secure the light transmitting portion in the optical semiconductor device.
【０００３】[0003]
【発明が解決しようとする課題】上記のような熱可塑性
樹脂を用いた光半導体装置にあっては次のような問題が
あった。すなわち、熱可塑性樹脂は硬化時間が短く、生
産性が高いという利点はあるが、非結晶性の透明熱可塑
性樹脂は、耐熱温度が低く半導体パッケージとして必要
なはんだ耐熱性を確保することができないという問題が
あった。The optical semiconductor device using the thermoplastic resin as described above has the following problems. That is, although the thermoplastic resin has the advantage that the curing time is short and the productivity is high, the amorphous transparent thermoplastic resin has a low heat resistance temperature and cannot secure the solder heat resistance necessary for a semiconductor package. There was a problem.
【０００４】そこで本発明は、光半導体素子のパッケー
ジを硬化時間が短い熱可塑性樹脂を用いて形成すること
により生産効率の高めるとともに、はんだ接続の際の熱
に耐えることができ、また光半導体素子として必要な光
透過部を確保することができる光半導体装置及びこの光
半導体装置を製造する光半導体装置製造方法を提供する
ことを目的としている。Therefore, according to the present invention, by forming a package of an optical semiconductor element by using a thermoplastic resin having a short curing time, it is possible to improve the production efficiency and to withstand the heat at the time of solder connection, and further, the optical semiconductor element. As a result, it is an object of the present invention to provide an optical semiconductor device capable of ensuring a necessary light transmitting portion and an optical semiconductor device manufacturing method for manufacturing the optical semiconductor device.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決し目的を
達成するために、本発明は、パッケージ内部に光半導体
素子が取り付けられたリードフレームが配設されてなる
光半導体装置において、前記パッケージは、一端部が開
放した中空容器状に形成され、前記リードフレームの前
記光半導体素子が設けられた側が中空部の内底部に露出
して配置された耐熱性熱可塑性樹脂からなる耐熱部と、
この耐熱部の中空部内に充填された透明樹脂からなる透
明部とを備えることとした。In order to solve the above-mentioned problems and to achieve the object, the present invention provides an optical semiconductor device in which a lead frame having an optical semiconductor element mounted therein is arranged in the package. Is formed in the shape of a hollow container with one end open, and a heat-resistant portion made of a heat-resistant thermoplastic resin in which the side of the lead frame on which the optical semiconductor element is provided is exposed to the inner bottom of the hollow portion, and
A transparent portion made of transparent resin filled in the hollow portion of the heat resistant portion is provided.
【０００６】また、光半導体素子を樹脂により封止する
光半導体装置製造方法において、成形金型内にリードフ
レームを設置する工程と、前記成形金型内に耐熱性熱可
塑性樹脂を充填して一端部が開放した中空容器状でその
内底部に前記リードフレームが露出した耐熱部を形成す
る工程と、前記リードフレームの前記中空容器の内底部
が露出した部分に光半導体素子を搭載する工程と、前記
光半導体素子の各端子を前記リードフレームの所定のリ
ード部にワイヤで接続する工程と、前記耐熱部の中空部
に透明樹脂を充填する工程とを備えることとした。Further, in a method of manufacturing an optical semiconductor device in which an optical semiconductor element is sealed with a resin, a step of installing a lead frame in a molding die and a step of filling the molding die with a heat resistant thermoplastic resin A step of forming a heat-resistant portion in which the lead frame is exposed at the inner bottom portion of the hollow container shape having an open portion; and a step of mounting an optical semiconductor element on the exposed inner bottom portion of the hollow container of the lead frame, A step of connecting each terminal of the optical semiconductor element to a predetermined lead portion of the lead frame with a wire and a step of filling the hollow portion of the heat-resistant portion with a transparent resin are provided.
【０００７】[0007]
【作用】上記手段を講じた結果、次のような作用が生じ
る。すなわち、パッケージ内部に光半導体素子が取り付
けられたリードフレームが配設されてなる光半導体装置
において、外部とのはんだ付け接続に供されるリードフ
レームの光半導体素子が設けられた側を耐熱性熱可塑性
樹脂により形成された中空容器状の耐熱部の中空部の内
底部に露出して配置したので、はんだ付け接続の際に発
生する２８０℃前後の熱により耐熱部が融解することは
ない。また、内底部上方の中空部に光透過部が確保され
ているために、光半導体素子の受光部又は発光部による
機能を発揮させることができる。As a result of taking the above-mentioned means, the following effects occur. That is, in an optical semiconductor device in which a lead frame to which an optical semiconductor element is attached is disposed inside a package, the side of the lead frame to be soldered to the outside where the optical semiconductor element is provided is heat-resistant. Since the hollow container-shaped heat-resistant portion formed of the plastic resin is disposed so as to be exposed at the inner bottom portion of the hollow portion, the heat-resistant portion is not melted by the heat of about 280 ° C. generated during the soldering connection. Moreover, since the light transmitting portion is secured in the hollow portion above the inner bottom portion, the function of the light receiving portion or the light emitting portion of the optical semiconductor element can be exerted.
【０００８】一方、上記のような光半導体素子を製造す
る場合において、耐熱部を熱可塑性樹脂で形成している
ので、硬化時間を１０秒程度と短くすることができる。
このため、射出成形後、成形金型からすぐに光半導体装
置を取り出すことができ、次の工程へと送ることができ
る。また、光透過部は中空容器状に形成された耐熱部の
中空部に充填して形成するようにしているので、充填後
すぐに光半導体装置を金型等から取り出して次の工程へ
と送ることができる。したがって、光半導体装置の生産
性を向上させることが可能である。On the other hand, in the case of manufacturing the above optical semiconductor element, since the heat resistant portion is formed of the thermoplastic resin, the curing time can be shortened to about 10 seconds.
Therefore, after injection molding, the optical semiconductor device can be immediately taken out from the molding die and can be sent to the next step. Further, since the light transmitting portion is formed by filling the hollow portion of the heat resistant portion formed in the shape of a hollow container, the optical semiconductor device is taken out from the mold or the like immediately after filling and sent to the next step. be able to. Therefore, it is possible to improve the productivity of the optical semiconductor device.
【０００９】[0009]
【実施例】図１は本発明の一実施例に係る光半導体装置
を示す断面図である。図中１０はパッケージ、２０はリ
ードフレーム、３０は発光ダイオード等の光半導体素子
を示している。パッケージ１０は耐熱性熱可塑性樹脂で
あるポリフェニレンサルファイド（ＰＰＳ）により形成
された中空容器状の耐熱部１１と、耐熱部１１の中空部
１１ａに配置され透明熱可塑性樹脂であるポリエーテル
サルフォン（ＰＥＳ）により形成された光透過部１２と
から構成されている。リードフレーム２０の光半導体素
子３０が設けられた側が耐熱部１１の中空部の内底部に
露出させて配置されており、光半導体素子３０が接合さ
れた矩形状のダイパッド部２１と、このダイパッド部２
１を囲むように配置されたリード部２２を備えている。
光半導体素子３０の各端子３１はボンディングワイヤ３
２を介してリード部２２上の接合部２２ａに接続されて
いる。1 is a sectional view showing an optical semiconductor device according to an embodiment of the present invention. In the figure, 10 is a package, 20 is a lead frame, and 30 is an optical semiconductor element such as a light emitting diode. The package 10 includes a heat-resistant portion 11 in the shape of a hollow container formed of polyphenylene sulfide (PPS) which is a heat-resistant thermoplastic resin, and a polyether sulfone (PES) which is a transparent thermoplastic resin disposed in the hollow portion 11a of the heat-resistant portion 11. ) And a light transmission part 12 formed of The side of the lead frame 20 on which the optical semiconductor element 30 is provided is disposed so as to be exposed at the inner bottom portion of the hollow portion of the heat resistant portion 11, and the rectangular die pad portion 21 to which the optical semiconductor element 30 is joined and the die pad portion. Two
1 is provided with a lead portion 22 arranged so as to surround 1.
Each terminal 31 of the optical semiconductor element 30 has a bonding wire 3
It is connected to the joint portion 22 a on the lead portion 22 via the connector 2.
【００１０】なお、ポリフェニレンサルファイド（ＰＰ
Ｓ）は不透明の樹脂であるが、２８０℃の下でも融解し
ない。ポリエーテルサルフォン（ＰＥＳ）は２８０℃以
下で融解するが透明の樹脂である。Polyphenylene sulfide (PP
S) is an opaque resin, but it does not melt even at 280 ° C. Polyether sulfone (PES) is a transparent resin although it melts below 280 ° C.
【００１１】上述した光半導体装置は図２の（ａ）〜
（ｃ）に示す製造工程により形成される。すなわち、図
２の（ａ）に示すようにリードフレーム２０を成形金型
としての第１の成形金型４０内に設置する。第１の成形
金型４０は矩形状溝部の開放側を図中下方に向けた上型
４０ａと、開放側を図中上方に向けた有底枠状の下型４
０ｂとから構成されており、リードフレーム２０は上型
４０ａと下型４０ｂに挟むようにして設置する。下型４
０ｂの底部に設けられた樹脂注入孔４１を介して耐熱性
熱可塑性樹脂であるポリフェニレンサルファイド（ＰＰ
Ｓ）を注入し、第１の成形金型４０内部を充填する。充
填後１０秒程度でポリフェニレンサルファイド（ＰＰ
Ｓ）は硬化し、これにより中空容器状の耐熱部１１が形
成される。その結果、リードフレーム２０は、耐熱部１
１の内底部に露出した状態となる。The above-mentioned optical semiconductor device is shown in FIGS.
It is formed by the manufacturing process shown in (c). That is, as shown in FIG. 2A, the lead frame 20 is installed in the first molding die 40 as a molding die. The first molding die 40 includes an upper die 40a in which the open side of the rectangular groove portion faces downward in the figure, and a bottomed frame-shaped lower die 4 in which the open side faces upward in the figure.
0b, and the lead frame 20 is installed so as to be sandwiched between the upper die 40a and the lower die 40b. Lower mold 4
0b through a resin injection hole 41 provided in the bottom portion of the heat resistant thermoplastic resin, polyphenylene sulfide (PP).
S) is injected to fill the inside of the first molding die 40. About 10 seconds after filling, polyphenylene sulfide (PP
S) is hardened, whereby the heat-resistant portion 11 in the shape of a hollow container is formed. As a result, the lead frame 20 has
1 is exposed to the inner bottom portion of 1.
【００１２】次に上型４０ａを取り外し、光半導体素子
３０をダイパッド部２１に搭載（ベアボンディング）
し、光半導体素子３０の各端子３１をダイパッド部２１
の側方に設けられたリード部２２の接合部２２ａにボン
ディングワイヤ３２を介して接続する。Next, the upper die 40a is removed, and the optical semiconductor element 30 is mounted on the die pad portion 21 (bare bonding).
Then, each terminal 31 of the optical semiconductor element 30 is connected to the die pad portion 21.
The bonding portion 22a of the lead portion 22 provided on the side of is connected via a bonding wire 32.
【００１３】続いて耐熱部１１の開口部に第２の成形金
型５０を蓋するように設置する。第２の成形金型５０に
設けられた樹脂注入孔５１を介して透明熱可塑性樹脂で
あるポリエーテルサルフォン（ＰＥＳ）を注入し、中空
部１１ａを充填する。充填後１０秒程度でポリエーテル
サルフォン（ＰＥＳ）は硬化し、これにより光透過部１
２が形成され、光半導体装置が完成する。Subsequently, the second molding die 50 is installed so as to cover the opening of the heat resistant portion 11. Polyether sulfone (PES), which is a transparent thermoplastic resin, is injected through a resin injection hole 51 provided in the second molding die 50 to fill the hollow portion 11a. About 10 seconds after the filling, the polyether sulfone (PES) is cured, so that the light transmitting portion 1
2 is formed, and the optical semiconductor device is completed.
【００１４】このような光半導体装置では、外部とのは
んだ付け接続に供されるリードフレームを耐熱性熱可塑
性樹脂により形成された中空容器状の耐熱部の内底部に
配置したので、はんだ付け接続の際に発生する２８０℃
前後の熱により融解することはない。また、光透過部が
確保されているために、光半導体素子の受光部又は発光
部による機能を発揮させることができる。In such an optical semiconductor device, since the lead frame used for soldering connection to the outside is arranged at the inner bottom of the hollow container-shaped heat-resistant portion formed of the heat-resistant thermoplastic resin, the soldering connection is performed. 280 ℃ generated when
It does not melt due to the heat around it. Further, since the light transmitting portion is secured, the function of the light receiving portion or the light emitting portion of the optical semiconductor element can be exerted.
【００１５】一方、光半導体素子を製造する場合におい
て、耐熱部を熱可塑性樹脂で形成しているので、硬化時
間を１０秒程度と短くすることができる。このため、射
出成形後、第１の成形金型からすぐに光半導体装置を取
り出すことができ、次の工程へと送ることができる。こ
のため、生産性が向上する。また、光透過部１２は中空
容器状に形成された耐熱部１１の中空部１１ａに透明熱
可塑性樹脂を充填して形成するようにしているので、硬
化時間を１０秒程度と短くすることができる。このた
め、射出成形後、第１の成形金型からすぐに光半導体装
置を取り出すことができ、次の工程へと送ることができ
る。このため、生産性が向上する。On the other hand, in the case of manufacturing an optical semiconductor element, since the heat resistant portion is formed of the thermoplastic resin, the curing time can be shortened to about 10 seconds. Therefore, after injection molding, the optical semiconductor device can be immediately taken out from the first molding die and can be sent to the next step. Therefore, productivity is improved. Further, since the light transmitting portion 12 is formed by filling the hollow portion 11a of the heat resistant portion 11 formed in a hollow container shape with the transparent thermoplastic resin, the curing time can be shortened to about 10 seconds. . Therefore, after injection molding, the optical semiconductor device can be immediately taken out from the first molding die and can be sent to the next step. Therefore, productivity is improved.
【００１６】上述したように本実施例によれば、耐熱性
が必要な部分と光透過性が必要な部分に硬化時間の短い
熱可塑性樹脂を用いることができるため、光半導体装置
の生産性を向上させることができる。また、リードフレ
ームの供給から製品の完成までを一貫したラインで製造
できるようになる。As described above, according to this embodiment, since the thermoplastic resin having a short curing time can be used in the part requiring heat resistance and the part requiring light transparency, the productivity of the optical semiconductor device can be improved. Can be improved. Also, it will be possible to manufacture on a consistent line from the supply of lead frames to the completion of products.
【００１７】なお、光透過部１２をシリコン、エポキシ
等の透明熱硬化性樹脂で形成するようにしてもよい。す
なわち、第１の成形金型で耐熱部１１を形成した後、第
２の成形金型に設置し、光透過部１２を透明熱硬化性樹
脂であるエポキシ樹脂をキャスティング若しくはトラン
スファモールドによって封止して形成する。この場合に
は光透過部１２の硬化時間が長くなるが、光透過部１２
は既に硬化している耐熱部１１によって保持されている
ので、透明熱硬化性樹脂が硬化中であっても第２の成形
金型から光半導体装置を取り出すことが可能となる、こ
のため、生産効率を向上させることが可能となる。The light transmitting portion 12 may be formed of a transparent thermosetting resin such as silicon or epoxy. That is, after the heat-resistant portion 11 is formed by the first molding die, the heat-resistant portion 11 is installed in the second molding die, and the light transmitting portion 12 is sealed with epoxy resin which is a transparent thermosetting resin by casting or transfer molding. To form. In this case, the curing time of the light transmitting portion 12 becomes longer, but
Is held by the heat-resistant portion 11 that has already been hardened, so that it is possible to take out the optical semiconductor device from the second molding die even while the transparent thermosetting resin is being hardened. It is possible to improve efficiency.
【００１８】なお、本発明は上述した実施例に限定され
るものではない。すなわち上記実施例では、耐熱性熱可
塑性樹脂として、ポリフェニレンサルファイド（ＰＰ
Ｓ）を用いているが、液晶ポリマ（ＬＣＰ）やポリエー
テルニトリル（ＰＥＮ）を用いるようにしてもよく、こ
れらを混ぜたものを用いてもよい。また、透明熱可塑性
樹脂として、ポリエーテルサルフォン（ＰＥＳ）を用い
ているが、ポリカーボネート（ＰＣ）、アモルファスポ
レオレフィン系（ＡＰＯ）を用いるようにしてもよく、
これらを混ぜたものを用いてもよい。さらに透明熱硬化
性樹脂として、エポキシ樹脂を用いているが、シリコン
を用いてもよい。このほか本発明の要旨を逸脱しない範
囲で種々変形実施可能であるのは勿論である。The present invention is not limited to the above embodiment. That is, in the above-mentioned examples, polyphenylene sulfide (PP) was used as the heat-resistant thermoplastic resin.
Although S) is used, liquid crystal polymer (LCP) or polyether nitrile (PEN) may be used, or a mixture of these may be used. Moreover, although polyether sulfone (PES) is used as the transparent thermoplastic resin, polycarbonate (PC) or amorphous polyolefin (APO) may be used.
You may use what mixed these. Furthermore, although an epoxy resin is used as the transparent thermosetting resin, silicon may be used. Of course, various modifications can be made without departing from the scope of the present invention.
【００１９】[0019]
【発明の効果】本発明によれば、パッケージ内部に光半
導体素子が取り付けられたリードフレームが配設されて
なる光半導体装置において、外部とのはんだ付け接続に
供されるリードフレームを耐熱性熱可塑性樹脂により形
成された中空容器状の耐熱部の内底部に配置したので、
はんだ付け接続の際に発生する２８０℃前後の熱により
耐熱部が融解することはない。また、内底部上方の中空
部に光透過部が確保されているために、光半導体素子の
受光部又は発光部による機能を発揮させることが可能で
ある。According to the present invention, in an optical semiconductor device in which a lead frame having an optical semiconductor element mounted therein is disposed inside a package, a lead frame used for soldering connection to the outside is heat-resistant. Since it was placed on the inner bottom of the heat-resistant part in the shape of a hollow container formed of a plastic resin,
The heat resistant portion is not melted by the heat of about 280 ° C. generated during the soldering connection. Further, since the light transmitting portion is secured in the hollow portion above the inner bottom portion, it is possible to exhibit the function of the light receiving portion or the light emitting portion of the optical semiconductor element.
【００２０】一方、光半導体素子を製造する場合におい
て、耐熱部を熱可塑性樹脂で形成しているので、硬化時
間を１０秒程度と短くすることができる。このため、射
出成形後、成形金型からすぐに光半導体装置を取り出す
ことができ、次の工程へと送ることができる。また、光
透過部は中空容器状に形成された耐熱部の中空部に充填
して形成するようにしているので、充填後すぐに光半導
体装置を金型等から取り出して次の工程へと送ることが
できる。したがって、光半導体装置の生産性を向上させ
ることが可能である。On the other hand, in the case of manufacturing an optical semiconductor element, since the heat resistant portion is formed of the thermoplastic resin, the curing time can be shortened to about 10 seconds. Therefore, after injection molding, the optical semiconductor device can be immediately taken out from the molding die and can be sent to the next step. Further, since the light transmitting portion is formed by filling the hollow portion of the heat resistant portion formed in the shape of a hollow container, the optical semiconductor device is taken out from the mold or the like immediately after filling and sent to the next step. be able to. Therefore, it is possible to improve the productivity of the optical semiconductor device.
【図１】本発明の一実施例に係る光半導体装置の断面
図。FIG. 1 is a sectional view of an optical semiconductor device according to an embodiment of the present invention.
【図２】同装置の製造方法を示す工程図。FIG. 2 is a process drawing showing the manufacturing method of the same device.
１０…パッケージ １１…耐熱部 １２…光透過部 ２０…リードフレ
ーム ２１…ダイパッド部 ２２…リード部 ２２ａ…接合部 ３０…光半導体素
子 ３１…端子 ３２…ボンディン
グワイヤ ４０…第１の成形金型 ４０ａ…上型 ４０ｂ…下型 ５０…第２の成形
金型DESCRIPTION OF SYMBOLS 10 ... Package 11 ... Heat resistant part 12 ... Light transmission part 20 ... Lead frame 21 ... Die pad part 22 ... Lead part 22a ... Bonding part 30 ... Optical semiconductor element 31 ... Terminal 32 ... Bonding wire 40 ... First molding die 40a ... Upper mold 40b ... Lower mold 50 ... Second molding die
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/29 23/31 31/02 Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 23/29 23/31 31/02
Claims (4)
られたリードフレームが配設されてなる光半導体装置に
おいて、 前記パッケージは、一端部が開放した中空容器状に形成
され、前記リードフレームの前記光半導体素子が設けら
れた側が中空部の内底部に露出して配置された耐熱性熱
可塑性樹脂からなる耐熱部と、この耐熱部の中空部内に
充填された透明樹脂からなる透明部とを備えていること
を特徴とする光半導体装置。1. An optical semiconductor device comprising a lead frame having an optical semiconductor element attached inside a package, wherein the package is formed in the shape of a hollow container with one end open. The side on which the semiconductor element is provided is provided with a heat-resistant part made of a heat-resistant thermoplastic resin which is arranged to be exposed at the inner bottom of the hollow part, and a transparent part made of a transparent resin filled in the hollow part of the heat-resistant part. An optical semiconductor device characterized in that
とを特徴とする請求項１に記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein the transparent resin is a transparent thermoplastic resin.
とを特徴とする請求項１に記載の光半導体装置。3. The optical semiconductor device according to claim 1, wherein the transparent resin is a transparent thermosetting resin.
体装置製造方法において、 成形金型内にリードフレームを設置する工程と、 前記成形金型内に耐熱性熱可塑性樹脂を充填して一端部
が開放した中空容器状でその内底部に前記リードフレー
ムが露出した耐熱部を形成する工程と、 前記リードフレームの前記中空容器の内底部が露出した
部分に光半導体素子を搭載する工程と、 前記光半導体素子の各端子を前記リードフレームの所定
のリード部にワイヤで接続する工程と、 前記耐熱部の中空部に透明樹脂を充填する工程とを備え
ていることを特徴とする光半導体装置製造方法。4. A method of manufacturing an optical semiconductor device in which an optical semiconductor element is sealed with a resin, a step of installing a lead frame in a molding die, and a step of filling the molding die with a heat resistant thermoplastic resin. A step of forming a heat-resistant part in which the lead frame is exposed at the inner bottom portion of the hollow container shape with an open part; and a step of mounting an optical semiconductor element on the exposed inner bottom part of the hollow container of the lead frame, An optical semiconductor device comprising: a step of connecting each terminal of the optical semiconductor element to a predetermined lead part of the lead frame with a wire; and a step of filling a transparent resin in a hollow part of the heat resistant part. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6077368A JPH07283441A (en) | 1994-04-15 | 1994-04-15 | Optical semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6077368A JPH07283441A (en) | 1994-04-15 | 1994-04-15 | Optical semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07283441A true JPH07283441A (en) | 1995-10-27 |
Family
ID=13631966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6077368A Pending JPH07283441A (en) | 1994-04-15 | 1994-04-15 | Optical semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07283441A (en) |
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1994
- 1994-04-15 JP JP6077368A patent/JPH07283441A/en active Pending
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