JPH07283441A - Optical semiconductor device and manufacture thereof - Google Patents

Optical semiconductor device and manufacture thereof

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Publication number
JPH07283441A
JPH07283441A JP6077368A JP7736894A JPH07283441A JP H07283441 A JPH07283441 A JP H07283441A JP 6077368 A JP6077368 A JP 6077368A JP 7736894 A JP7736894 A JP 7736894A JP H07283441 A JPH07283441 A JP H07283441A
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JP
Japan
Prior art keywords
optical semiconductor
portion
semiconductor device
heat
semiconductor element
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP6077368A
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Japanese (ja)
Inventor
Masaki Adachi
正樹 安達
Original Assignee
Toshiba Corp
株式会社東芝
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Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP6077368A priority Critical patent/JPH07283441A/en
Publication of JPH07283441A publication Critical patent/JPH07283441A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

PURPOSE:To provide an optical semiconductor device capable of increasing the production efficiency, resisting the heat generated in the soldering step as well as securing transparent part required for an optical semiconductor element. CONSTITUTION:Within an optical semiconductor device where the lead frame 20 fitted with the optical semiconductor element 30 is arranged in a package 10, the package 10 is formed in one end opened hollow vessel shape, furthermore, provided with a heat resistant part 11 comprising a heat resistant thermoplastic resin whose optical semiconductor element 30 of the lead frame 20 side is exposed in the bottom part of the hollow vessel part as well as a transparent part 12 comprising a transparent resin filled up in the hollow part of the heat resistant part 11.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、LED等の発光半導体素子又はフォトトランジスタやCCD等の受光半導体素子等の光半導体素子を樹脂で封止した光半導体装置及び光半導体装置製造方法に関する。 The present invention relates to a method for an optical semiconductor device and optical semiconductor device manufacturing an optical semiconductor element such as a light receiving semiconductor element such as a light emitting semiconductor element or phototransistor or a CCD is sealed with a resin, such as LED.

【0002】 [0002]

【従来の技術】従来から光半導体装置は、発光半導体素子又は受光半導体素子等の光半導体素子をダイパッド部に搭載し、光半導体素子の各端子をダイパッド部の周囲に設けられたリード部にボンディングワイヤを介して接続されたリードフレームを成形金型に投入し、エポキシ樹脂を用いてキャスティング若しくはトランスファモールドによって封止して形成されている。 BACKGROUND OF THE INVENTION Conventional from the optical semiconductor device, the light emitting semiconductor element or mounting the optical semiconductor element such as a light-receiving semiconductor element on the die pad portion, bonding the terminals of the optical semiconductor element to the lead portion provided on the periphery of the die pad portion the connected lead frame via a wire was placed in the molding die is formed by sealing by casting or transfer molding using an epoxy resin. しかしながら、 However,
エポキシ樹脂等の熱硬化性樹脂は形成時の硬化時間が3 Curing time for the thermosetting resin such as an epoxy resin formed 3
〜5分と長く生産性に劣るという問題があった。 There has been a problem that it is inferior to 5 minutes with the long productivity. そこで、硬化時間が短い樹脂として、熱可塑性樹脂を用いることが検討されている。 Therefore, as a short resin curing time, it has been considered to use thermoplastic resin. なお、光半導体装置では光透過部を確保しなければならないため、非結晶性の透明熱可塑性樹脂を使用する必要がある。 Incidentally, since the optical semiconductor device must ensure the light transmitting portion, it is necessary to use a non-crystalline transparent thermoplastic resin.

【0003】 [0003]

【発明が解決しようとする課題】上記のような熱可塑性樹脂を用いた光半導体装置にあっては次のような問題があった。 It has the following problems In the optical semiconductor device using the thermoplastic resin as above [0005]. すなわち、熱可塑性樹脂は硬化時間が短く、生産性が高いという利点はあるが、非結晶性の透明熱可塑性樹脂は、耐熱温度が低く半導体パッケージとして必要なはんだ耐熱性を確保することができないという問題があった。 That is, that the thermoplastic resin has a short curing time, albeit advantage of high productivity, noncrystalline transparent thermoplastic resin can not be heat-resistant temperature to ensure the necessary solder heat resistance as a semiconductor package lower there was a problem.

【0004】そこで本発明は、光半導体素子のパッケージを硬化時間が短い熱可塑性樹脂を用いて形成することにより生産効率の高めるとともに、はんだ接続の際の熱に耐えることができ、また光半導体素子として必要な光透過部を確保することができる光半導体装置及びこの光半導体装置を製造する光半導体装置製造方法を提供することを目的としている。 [0004] The present invention enhances production efficiency by setting time a package of the optical semiconductor element is formed using a short thermoplastic resin, it can withstand the heat during solder connection, also an optical semiconductor element and its object is to provide an optical semiconductor device manufacturing method for manufacturing an optical semiconductor device and optical semiconductor device which can ensure a light transmission portion necessary as.

【0005】 [0005]

【課題を解決するための手段】上記課題を解決し目的を達成するために、本発明は、パッケージ内部に光半導体素子が取り付けられたリードフレームが配設されてなる光半導体装置において、前記パッケージは、一端部が開放した中空容器状に形成され、前記リードフレームの前記光半導体素子が設けられた側が中空部の内底部に露出して配置された耐熱性熱可塑性樹脂からなる耐熱部と、 To achieve a solution to the purpose above problems SUMMARY OF THE INVENTION The present invention provides an optical semiconductor device lead frame is disposed an optical semiconductor element is mounted within the package, the package is formed in a hollow container shape whose one end portion is open, and the heat-resistant portion made of the lead frame side where the optical semiconductor element is provided for are exposed and arranged at an inner bottom portion of the hollow portion was heat-resistant thermoplastic resin,
この耐熱部の中空部内に充填された透明樹脂からなる透明部とを備えることとした。 It was decided and a transparent portion formed of the heat resistant portion is a transparent resin filled in the hollow portion of the.

【0006】また、光半導体素子を樹脂により封止する光半導体装置製造方法において、成形金型内にリードフレームを設置する工程と、前記成形金型内に耐熱性熱可塑性樹脂を充填して一端部が開放した中空容器状でその内底部に前記リードフレームが露出した耐熱部を形成する工程と、前記リードフレームの前記中空容器の内底部が露出した部分に光半導体素子を搭載する工程と、前記光半導体素子の各端子を前記リードフレームの所定のリード部にワイヤで接続する工程と、前記耐熱部の中空部に透明樹脂を充填する工程とを備えることとした。 [0006] In the optical semiconductor device manufacturing method of the optical semiconductor element is sealed with a resin, and filling the steps of placing a lead frame in a molding die, the heat-resistant thermoplastic resin within the molding die end a step of the to the inner bottom portion of a hollow container shape lead frame to form a heat-resistant portion exposed to part is open, the step of mounting the optical semiconductor element to the portion where the inner bottom portion exposed in said hollow container of said lead frame, It was further comprising a step of connecting the respective terminals of the optical semiconductor element by wire to a predetermined lead portion of the lead frame, and a step of filling the transparent resin into the hollow portion of the heat portion.

【0007】 [0007]

【作用】上記手段を講じた結果、次のような作用が生じる。 [Action] As a result of taking the above-mentioned means, acts such as the following may occur. すなわち、パッケージ内部に光半導体素子が取り付けられたリードフレームが配設されてなる光半導体装置において、外部とのはんだ付け接続に供されるリードフレームの光半導体素子が設けられた側を耐熱性熱可塑性樹脂により形成された中空容器状の耐熱部の中空部の内底部に露出して配置したので、はんだ付け接続の際に発生する280℃前後の熱により耐熱部が融解することはない。 That is, in the optical semiconductor device lead frame optical semiconductor element is mounted is disposed inside the package, heat resistant side of the optical semiconductor element is provided in the lead frame to be subjected to the soldering connection to the outside having positioned exposed at the inner bottom portion of the hollow portion of the hollow container shaped refractory portion formed by plastic resin, never heat portion is melted by 280 ° C. before and after the heat generated during the soldering connection. また、内底部上方の中空部に光透過部が確保されているために、光半導体素子の受光部又は発光部による機能を発揮させることができる。 Further, since the light transmitting portion is secured to the hollow portion of the inner bottom upward, it is possible to exhibit the function of the light receiving unit or a light emitting portion of the optical semiconductor element.

【0008】一方、上記のような光半導体素子を製造する場合において、耐熱部を熱可塑性樹脂で形成しているので、硬化時間を10秒程度と短くすることができる。 On the other hand, in the case of manufacturing an optical semiconductor element as described above, since the heat portion are formed of a thermoplastic resin, the curing time can be shortened to about 10 seconds.
このため、射出成形後、成形金型からすぐに光半導体装置を取り出すことができ、次の工程へと送ることができる。 Therefore, after the injection molding, as soon as it is possible to take out the optical semiconductor device from the molding die, it can be sent to the next step. また、光透過部は中空容器状に形成された耐熱部の中空部に充填して形成するようにしているので、充填後すぐに光半導体装置を金型等から取り出して次の工程へと送ることができる。 Further, since the light transmitting portion is so formed by filling the hollow portion of the heat-resistant portion formed in a hollow container shape, and sends to the next step of the optical semiconductor device immediately after filling is removed from the mold, etc. be able to. したがって、光半導体装置の生産性を向上させることが可能である。 Therefore, it is possible to improve the productivity of the optical semiconductor device.

【0009】 [0009]

【実施例】図1は本発明の一実施例に係る光半導体装置を示す断面図である。 DETAILED DESCRIPTION FIG. 1 is a sectional view showing an optical semiconductor device according to an embodiment of the present invention. 図中10はパッケージ、20はリードフレーム、30は発光ダイオード等の光半導体素子を示している。 Figure 10 is a package, 20 lead frame, 30 indicates an optical semiconductor element such as a light emitting diode. パッケージ10は耐熱性熱可塑性樹脂であるポリフェニレンサルファイド(PPS)により形成された中空容器状の耐熱部11と、耐熱部11の中空部11aに配置され透明熱可塑性樹脂であるポリエーテルサルフォン(PES)により形成された光透過部12とから構成されている。 Package 10 heat resistant hollow container-like heat portion 11 formed by thermal a thermoplastic resin polyphenylene sulfide (PPS), polyether sulfone (PES hollow portion arranged 11a transparent thermoplastic resin of heat-resistant section 11 and a formed light transmitting section 12. by). リードフレーム20の光半導体素子30が設けられた側が耐熱部11の中空部の内底部に露出させて配置されており、光半導体素子30が接合された矩形状のダイパッド部21と、このダイパッド部2 Side optical semiconductor element 30 of the lead frame 20 is provided is disposed to expose the inner bottom portion of the hollow portion of the heat unit 11, a rectangular die pad portion 21 which the optical semiconductor element 30 is bonded, the die pad portion 2
1を囲むように配置されたリード部22を備えている。 And a lead portion 22 which is disposed so as to surround the 1.
光半導体素子30の各端子31はボンディングワイヤ3 Each terminal 31 of the optical semiconductor element 30 is a bonding wire 3
2を介してリード部22上の接合部22aに接続されている。 And it is connected to the junction 22a on the lead portion 22 via a 2.

【0010】なお、ポリフェニレンサルファイド(PP [0010] In addition, polyphenylene sulfide (PP
S)は不透明の樹脂であるが、280℃の下でも融解しない。 S) is an opaque resin, it does not melt even under 280 ° C.. ポリエーテルサルフォン(PES)は280℃以下で融解するが透明の樹脂である。 Polyether sulfone (PES) is a resin but clear melt at 280 ° C. or less.

【0011】上述した光半導体装置は図2の(a)〜 [0011] The optical semiconductor device described above FIG. 2 (a) ~
(c)に示す製造工程により形成される。 It is formed by the manufacturing process shown in (c). すなわち、図2の(a)に示すようにリードフレーム20を成形金型としての第1の成形金型40内に設置する。 That is, placing the lead frame 20 as shown in FIG. 2 (a) to the first molding die 40 as a molding die. 第1の成形金型40は矩形状溝部の開放側を図中下方に向けた上型40aと、開放側を図中上方に向けた有底枠状の下型4 The first molding die 40 is rectangular groove and an upper mold 40a which the open side directed downward in the drawing, the open side of the bottomed frame-like lower mold toward upward in FIG. 4
0bとから構成されており、リードフレーム20は上型40aと下型40bに挟むようにして設置する。 0b are composed of a lead frame 20 is placed so as to sandwich the upper die 40a and lower die 40b. 下型4 The lower mold 4
0bの底部に設けられた樹脂注入孔41を介して耐熱性熱可塑性樹脂であるポリフェニレンサルファイド(PP Through the resin injection hole 41 provided in the bottom portion of the 0b is a heat-resistant thermoplastic resins polyphenylene sulfide (PP
S)を注入し、第1の成形金型40内部を充填する。 It injected S), to fill the first molding die 40. 充填後10秒程度でポリフェニレンサルファイド(PP Polyphenylene sulfide in about 10 seconds after filling (PP
S)は硬化し、これにより中空容器状の耐熱部11が形成される。 S) is cured, thereby a hollow container-like heat portion 11 is formed. その結果、リードフレーム20は、耐熱部1 As a result, the lead frame 20, heat unit 1
1の内底部に露出した状態となる。 In a state of being exposed at the inner bottom of the 1.

【0012】次に上型40aを取り外し、光半導体素子30をダイパッド部21に搭載(ベアボンディング) [0012] Remove the upper mold 40a then mounting an optical semiconductor element 30 to the die pad portion 21 (bare bonding)
し、光半導体素子30の各端子31をダイパッド部21 And the die pad and the terminals 31 of the optical semiconductor element 30 21
の側方に設けられたリード部22の接合部22aにボンディングワイヤ32を介して接続する。 Connected via bonding wires 32 to the bonding portion 22a of the lead portion 22 provided on the side of.

【0013】続いて耐熱部11の開口部に第2の成形金型50を蓋するように設置する。 [0013] subsequently positioned to cover the second molding die 50 into the opening of the heat unit 11. 第2の成形金型50に設けられた樹脂注入孔51を介して透明熱可塑性樹脂であるポリエーテルサルフォン(PES)を注入し、中空部11aを充填する。 Through the resin injection hole 51 provided in the second molding die 50 by injecting polyether sulfone is a transparent thermoplastic resin (PES), filling the hollow portion 11a. 充填後10秒程度でポリエーテルサルフォン(PES)は硬化し、これにより光透過部1 Polyether sulfone in about 10 seconds after filling (PES) is cured, thereby the light transmission pieces 1
2が形成され、光半導体装置が完成する。 2 is formed, the optical semiconductor device is completed.

【0014】このような光半導体装置では、外部とのはんだ付け接続に供されるリードフレームを耐熱性熱可塑性樹脂により形成された中空容器状の耐熱部の内底部に配置したので、はんだ付け接続の際に発生する280℃ [0014] In such an optical semiconductor device, since disposed on an inner bottom portion of the hollow container-like heat unit lead frame to be subjected to the soldering connection formed by heat-resistant thermoplastic resin with the outside, soldered connection generated at the time of 280 ℃
前後の熱により融解することはない。 Not be melted by the front and rear of the heat. また、光透過部が確保されているために、光半導体素子の受光部又は発光部による機能を発揮させることができる。 Further, since the light transmitting portion is secured, it is possible to exhibit the function of the light receiving unit or a light emitting portion of the optical semiconductor element.

【0015】一方、光半導体素子を製造する場合において、耐熱部を熱可塑性樹脂で形成しているので、硬化時間を10秒程度と短くすることができる。 Meanwhile, in the case of manufacturing an optical semiconductor device, since the heat portion are formed of a thermoplastic resin, the curing time can be shortened to about 10 seconds. このため、射出成形後、第1の成形金型からすぐに光半導体装置を取り出すことができ、次の工程へと送ることができる。 Therefore, after the injection molding, as soon as it is possible to take out the optical semiconductor device from the first molding die, it can be sent to the next step. このため、生産性が向上する。 For this reason, the productivity is improved. また、光透過部12は中空容器状に形成された耐熱部11の中空部11aに透明熱可塑性樹脂を充填して形成するようにしているので、硬化時間を10秒程度と短くすることができる。 Further, the light transmitting portion 12 is to be formed by filling a transparent thermoplastic resin into the hollow portion 11a of the heat portion 11 formed into a hollow container shape, the curing time can be shortened to about 10 seconds . このため、射出成形後、第1の成形金型からすぐに光半導体装置を取り出すことができ、次の工程へと送ることができる。 Therefore, after the injection molding, as soon as it is possible to take out the optical semiconductor device from the first molding die, it can be sent to the next step. このため、生産性が向上する。 For this reason, the productivity is improved.

【0016】上述したように本実施例によれば、耐熱性が必要な部分と光透過性が必要な部分に硬化時間の短い熱可塑性樹脂を用いることができるため、光半導体装置の生産性を向上させることができる。 According to the present embodiment as described above, it is possible to use a short thermoplastic resin curing time is necessary part portion and a light transmitting requiring heat resistance, the optical semiconductor device productivity it is possible to improve. また、リードフレームの供給から製品の完成までを一貫したラインで製造できるようになる。 Moreover, consisting of a supply of the lead frame to complete the product to be manufactured in a consistent line.

【0017】なお、光透過部12をシリコン、エポキシ等の透明熱硬化性樹脂で形成するようにしてもよい。 [0017] Incidentally, the light transmitting portion 12 of silicon, may be formed of a transparent thermosetting resin such as epoxy. すなわち、第1の成形金型で耐熱部11を形成した後、第2の成形金型に設置し、光透過部12を透明熱硬化性樹脂であるエポキシ樹脂をキャスティング若しくはトランスファモールドによって封止して形成する。 That is, after forming the heat-resistant portion 11 in the first molding die was placed in a second molding die, the epoxy resin is a transparent thermosetting resin the light transmitting portion 12 is sealed by a casting or transfer molding to form Te. この場合には光透過部12の硬化時間が長くなるが、光透過部12 Curing time of the light transmitting portion 12 becomes longer in this case, the light transmitting portion 12
は既に硬化している耐熱部11によって保持されているので、透明熱硬化性樹脂が硬化中であっても第2の成形金型から光半導体装置を取り出すことが可能となる、このため、生産効率を向上させることが可能となる。 Because it is held by the heat unit 11 which already cured, transparent thermosetting resin can be taken out of an optical semiconductor device from the second molding die even during curing and thus, production it is possible to improve efficiency.

【0018】なお、本発明は上述した実施例に限定されるものではない。 [0018] The present invention is not limited to the embodiments described above. すなわち上記実施例では、耐熱性熱可塑性樹脂として、ポリフェニレンサルファイド(PP That is, in the above embodiment, as a heat-resistant thermoplastic resin, polyphenylene sulfide (PP
S)を用いているが、液晶ポリマ(LCP)やポリエーテルニトリル(PEN)を用いるようにしてもよく、これらを混ぜたものを用いてもよい。 While using the S), it may be used a liquid crystal polymer (LCP) and polyether nitrile (PEN), or may be used after mixing them. また、透明熱可塑性樹脂として、ポリエーテルサルフォン(PES)を用いているが、ポリカーボネート(PC)、アモルファスポレオレフィン系(APO)を用いるようにしてもよく、 Further, as the transparent thermoplastic resin, is used a polyether sulfone a (PES), polycarbonate (PC), amorphous polyolefin-based may also be used (APO),
これらを混ぜたものを用いてもよい。 These may be used as the mixed. さらに透明熱硬化性樹脂として、エポキシ樹脂を用いているが、シリコンを用いてもよい。 As a further transparent thermosetting resin, it is used an epoxy resin, may be used silicon. このほか本発明の要旨を逸脱しない範囲で種々変形実施可能であるのは勿論である。 It is of course that various modifications may be implemented without departing from the scope of the other present invention.

【0019】 [0019]

【発明の効果】本発明によれば、パッケージ内部に光半導体素子が取り付けられたリードフレームが配設されてなる光半導体装置において、外部とのはんだ付け接続に供されるリードフレームを耐熱性熱可塑性樹脂により形成された中空容器状の耐熱部の内底部に配置したので、 According to the present invention, in an optical semiconductor device lead frame optical semiconductor element is mounted is disposed inside the package, heat resistant lead frame to be subjected to the soldering connection to the outside having disposed on an inner bottom portion of the hollow container shaped refractory portion formed by plastic resin,
はんだ付け接続の際に発生する280℃前後の熱により耐熱部が融解することはない。 Never heat unit by 280 ° C. before and after the heat generated during the soldering connection is melted. また、内底部上方の中空部に光透過部が確保されているために、光半導体素子の受光部又は発光部による機能を発揮させることが可能である。 Further, since the light transmitting portion is secured to the hollow portion of the inner bottom upward, it is possible to exhibit the function of the light receiving unit or a light emitting portion of the optical semiconductor element.

【0020】一方、光半導体素子を製造する場合において、耐熱部を熱可塑性樹脂で形成しているので、硬化時間を10秒程度と短くすることができる。 Meanwhile, in the case of manufacturing an optical semiconductor device, since the heat portion are formed of a thermoplastic resin, the curing time can be shortened to about 10 seconds. このため、射出成形後、成形金型からすぐに光半導体装置を取り出すことができ、次の工程へと送ることができる。 Therefore, after the injection molding, as soon as it is possible to take out the optical semiconductor device from the molding die, it can be sent to the next step. また、光透過部は中空容器状に形成された耐熱部の中空部に充填して形成するようにしているので、充填後すぐに光半導体装置を金型等から取り出して次の工程へと送ることができる。 Further, since the light transmitting portion is so formed by filling the hollow portion of the heat-resistant portion formed in a hollow container shape, and sends to the next step of the optical semiconductor device immediately after filling is removed from the mold, etc. be able to. したがって、光半導体装置の生産性を向上させることが可能である。 Therefore, it is possible to improve the productivity of the optical semiconductor device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例に係る光半導体装置の断面図。 Sectional view of an optical semiconductor device according to an embodiment of the present invention; FIG.

【図2】同装置の製造方法を示す工程図。 Process diagram showing a manufacturing method of Figure 2 the apparatus.

【符号の説明】 DESCRIPTION OF SYMBOLS

10…パッケージ 11…耐熱部 12…光透過部 20…リードフレーム 21…ダイパッド部 22…リード部 22a…接合部 30…光半導体素子 31…端子 32…ボンディングワイヤ 40…第1の成形金型 40a…上型 40b…下型 50…第2の成形金型 10 ... package 11 ... heat section 12 ... light transmitting portion 20 ... lead frames 21 ... die pad portion 22 ... lead portions 22a ... junction 30 ... optical semiconductor device 31 ... terminal 32 ... bonding wire 40 ... first molding die 40a ... upper die 40b ... lower die 50 ... second molding die

フロントページの続き (51)Int.Cl. 6識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/29 23/31 31/02 Front page continued (51) Int.Cl. 6 Docket No. FI technique in identification symbol Agency display portion H01L 23/29 23/31 31/02

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】パッケージ内部に光半導体素子が取り付けられたリードフレームが配設されてなる光半導体装置において、 前記パッケージは、一端部が開放した中空容器状に形成され、前記リードフレームの前記光半導体素子が設けられた側が中空部の内底部に露出して配置された耐熱性熱可塑性樹脂からなる耐熱部と、この耐熱部の中空部内に充填された透明樹脂からなる透明部とを備えていることを特徴とする光半導体装置。 1. A optical semiconductor device lead frame is disposed an optical semiconductor element is mounted inside the package, the package is formed in a hollow container shape whose one end portion is open, the light of the lead frame comprises a heat-resistant section having a semiconductor element made of a heat-resistant thermoplastic resin side is disposed to be exposed to the inner bottom portion of the hollow portion is provided, and a transparent part made of a filled transparent resin into the hollow portion of the heat portion the optical semiconductor device, characterized in that there.
  2. 【請求項2】前記透明樹脂は透明熱可塑性樹脂であることを特徴とする請求項1に記載の光半導体装置。 2. An optical semiconductor device according to claim 1, wherein the transparent resin is a transparent thermoplastic resin.
  3. 【請求項3】前記透明樹脂は透明熱硬化性樹脂であることを特徴とする請求項1に記載の光半導体装置。 3. An optical semiconductor device according to claim 1, wherein the transparent resin is a transparent thermosetting resin.
  4. 【請求項4】光半導体素子を樹脂により封止する光半導体装置製造方法において、 成形金型内にリードフレームを設置する工程と、 前記成形金型内に耐熱性熱可塑性樹脂を充填して一端部が開放した中空容器状でその内底部に前記リードフレームが露出した耐熱部を形成する工程と、 前記リードフレームの前記中空容器の内底部が露出した部分に光半導体素子を搭載する工程と、 前記光半導体素子の各端子を前記リードフレームの所定のリード部にワイヤで接続する工程と、 前記耐熱部の中空部に透明樹脂を充填する工程とを備えていることを特徴とする光半導体装置製造方法。 4. A optical semiconductor device manufacturing method of the optical semiconductor element is sealed with a resin, a step of placing the lead frame into the molding die, filled with a heat-resistant thermoplastic resin within the molding die end a step of the to the inner bottom portion of a hollow container shape lead frame to form a heat-resistant portion exposed to part is open, the step of mounting the optical semiconductor element to the portion where the inner bottom portion exposed in said hollow container of said lead frame, optical semiconductor device characterized in that it comprises a step of connecting the respective terminals of the optical semiconductor element by wire to a predetermined lead portion of the lead frame, and a step of filling the transparent resin into the hollow portion of said refractory part Production method.
JP6077368A 1994-04-15 1994-04-15 Optical semiconductor device and manufacture thereof Pending JPH07283441A (en)

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