JP3183715B2 - Resin-sealed optical element - Google Patents
Resin-sealed optical elementInfo
- Publication number
- JP3183715B2 JP3183715B2 JP18440492A JP18440492A JP3183715B2 JP 3183715 B2 JP3183715 B2 JP 3183715B2 JP 18440492 A JP18440492 A JP 18440492A JP 18440492 A JP18440492 A JP 18440492A JP 3183715 B2 JP3183715 B2 JP 3183715B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- resin layer
- emitting diode
- light emitting
- metal wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば発光ダイオード
装置のように内部素子と、内部素子とリード端子とを接
続する金属線とが樹脂で封止された樹脂封止型光学素子
に関する。The present invention relates, for example, light emitting diodes <br/> and internal elements as equipment, resin sealing type in which a metal wire for connecting the inner element and the lead terminals are sealed with resin The present invention relates to an optical element .
【０００２】[0002]
【従来の技術】従来のこの種の樹脂封止型光学素子の構
成を発光ダイオード装置を例に採って図３、図４に示し
説明する。図３に示す発光ダイオード装置１０は、リー
ド端子１の先端部のダイパッド２に形成された凹部３に
発光ダイオード素子４がダイボンディングされ、その発
光ダイオード素子４と、リード端子５の先端部７とが金
線等の金属線６で接続され、その発光ダイオード素子４
と金属線６とが樹脂１１によって封止された構成であ
る。この樹脂１１は、温度サイクルやハンダ付け時の熱
等から発光ダイオード素子４や金属線６の接続部等を保
護し、製品の信頼性を高めるために、例えば、ガラス転
移温度（Ｔｇ値）が１１５〜１１７°程度で安定してい
るエポキシ樹脂等が用いられ、また、その成形は、一般
に注型法によって行なわれている。BACKGROUND OF THE INVENTION The construction of this type of conventional resin-sealed optical element takes the light emitting diode device in Example 3, shown is described in FIG. In a light emitting diode device 10 shown in FIG. 3 , a light emitting diode element 4 is die-bonded to a concave portion 3 formed in a die pad 2 at a tip end of a lead terminal 1, and the light emitting diode element 4 and a tip end 7 of a lead terminal 5 are connected to each other. Are connected by a metal wire 6 such as a gold wire.
And a metal wire 6 are sealed with a resin 11. The resin 11 protects the connection portion of the light emitting diode element 4 and the metal wire 6 from a temperature cycle or heat during soldering, and has a glass transition temperature (Tg value) in order to improve the reliability of the product. An epoxy resin or the like that is stable at about 115 to 117 ° is used, and its molding is generally performed by a casting method.
【０００３】また、図４に示す発光ダイオード装置２０
は、リード端子１の先端部のダイパッド２に形成された
凹部３にダイボンディングされた発光ダイオード素子４
とリード端子５の先端部７とが金属線６で接続された状
態で、まず、凹部３内の発光ダイオード素子４が樹脂２
１によってコーティングされ、次に、その発光ダイオー
ド素子４と金属線６とが樹脂２２によって封止された構
成である。樹脂２１は発光ダイオード素子４を湿気から
保護し、また、熱サイクルが加わったときに樹脂２２が
伸縮することによる外部応力から発光ダイオード素子４
を保護するために、例えば、シリコーン樹脂等が用いら
れている。A light emitting diode device 20 shown in FIG.
Is a light emitting diode element 4 die-bonded to a recess 3 formed in a die pad 2 at the tip of a lead terminal 1.
First, the light emitting diode element 4 in the concave portion 3 is
1 and then the light emitting diode element 4 and the metal wire 6 are sealed with a resin 22. The resin 21 protects the light emitting diode element 4 from moisture, and is protected from external stress caused by expansion and contraction of the resin 22 when a heat cycle is applied.
For example, a silicone resin or the like is used to protect the substrate.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。すなわち、従来の発光ダイオード装置１０、２０
に用いられている樹脂１１や２２は、外的環境や汚染等
から発光ダイオード素子４や金属線６の接続部等を保護
し、製品の信頼性を高めるために、所定の特性を有する
樹脂が用いられているが、このような樹脂は高価であ
り、従って製品の製造コストが高くなるという問題があ
る。また、これらの樹脂はあらゆる特性を兼ね備えてい
るわけではなく、上記の樹脂１１、２２においては、例
えば、注型法による樹脂成形時に型に流し込み、熱硬化
された樹脂と型とが離れ難い等、樹脂の成形特性に問題
がある等、製品の信頼性や製造工程の作業効率向上のた
めに要求される樹脂の特性を充分に満足させることがで
きないという問題もある。However, the prior art having such a structure has the following problems. That is, the conventional light emitting diode devices 10, 20
The resins 11 and 22 used for the purpose of the present invention protect the connection portions of the light emitting diode elements 4 and the metal wires 6 from the external environment and contamination, and improve the reliability of the product. Although used, such resins are expensive and have the problem of increasing the manufacturing costs of the product. In addition, these resins do not have all the properties. For the above-mentioned resins 11 and 22, for example, the resin is poured into a mold at the time of resin molding by a casting method, and the thermoset resin and the mold are hardly separated from each other. In addition, there is a problem that the characteristics of the resin required for improving the reliability of the product and the efficiency of the manufacturing process cannot be sufficiently satisfied, for example, there is a problem in the molding characteristics of the resin.
【０００５】本発明は、このような事情に鑑みてなされ
たものであって、製品の信頼性や製造工程の作業効率向
上のために要求される樹脂の特性を充分満足させ、しか
も製造コストが安価な樹脂封止型光学素子を提供するこ
とを目的とする。The present invention has been made in view of such circumstances, and satisfactorily satisfies the characteristics of a resin required for improving the reliability of a product and the working efficiency of a manufacturing process. An object is to provide an inexpensive resin-sealed optical element .
【０００６】[0006]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、本発明は、内部素子と、前記内部素子とリード端子
とを接続する金属線とが樹脂封止された光学素子におい
て、前記内部素子と前記金属線とを被う透光性の第一樹
脂層と、前記第一樹脂層を被う透光性の第二樹脂層と、
前記第二樹脂層を被ってパッケージ本体を形作る透光性
の第三樹脂層と、を備え、前記第一樹脂層は、前記各樹
脂層の中で最もガラス転移温度の安定した樹脂であり、
前記第二樹脂層は、前記各樹脂層の中で最も吸湿性の小
さい樹脂であり、前記第三樹脂層は、前記各樹脂層の中
で最も成形特性の良い樹脂を用いるものである。The present invention has the following configuration in order to achieve the above object. That is, in the present invention, in an optical element in which an internal element and a metal wire connecting the internal element and the lead terminal are resin-sealed, a transparent material covering the internal element and the metal wire is provided. Light- emitting first resin layer, a light- transmitting second resin layer covering the first resin layer,
Translucent shape the package body to cover the second resin layer
And a third resin layer, wherein the first resin layer is a resin having the most stable glass transition temperature among the respective resin layers,
The second resin layer is a resin having the smallest hygroscopicity among the resin layers, and the third resin layer is a resin having the best molding characteristics among the resin layers.
【０００７】[0007]
【作用】本発明の作用は次のとおりである。内部素子
と、その内部素子とリード端子とを接続する金属線と
を、ガラス転移温度の安定した第一樹脂層で被うことに
より、温度サイクルやハンダ付け時の熱等から内部素子
や金属線の接続部等を保護し、次に、その第一樹脂層
を、吸湿性の小さい第二樹脂層で被うことにより、第一
樹脂層で被われた内部素子と金属線とを湿気から保護
し、もって製品の信頼性の向上が図れ、さらに、その第
二樹脂層を、成形特性の良い第三樹脂層で被ってパッケ
ージ本体を形作ることにより、樹脂成形工程における作
業効率の向上が図れる。すなわち、製品の信頼性や製造
工程の作業効率向上のために要求される樹脂の特性を各
樹脂層で実現することができる。The operation of the present invention is as follows. By covering the internal element and the metal wire connecting the internal element and the lead terminal with the first resin layer having a stable glass transition temperature, the internal element and the metal wire are prevented from being subjected to a temperature cycle, heat during soldering, or the like. Protect the internal elements and metal wires covered by the first resin layer from moisture by covering the first resin layer with a second resin layer with low hygroscopicity. Thus, the reliability of the product can be improved, and further, by covering the second resin layer with the third resin layer having good molding characteristics to form the package body, the operation efficiency in the resin molding process can be improved. That is, the characteristics of the resin required for improving the reliability of the product and the work efficiency in the manufacturing process can be realized in each resin layer.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の一実施例を説
明する。本発明の一実施例に係る発光ダイオード装置の
構成を図１に示し説明する。この発光ダイオード装置３
０は、リード端子１の先端部のダイパッド２に形成され
た凹部３にダイボンディングされた発光ダイオード素子
４とリード端子５の先端部７とが金属線６で接続された
状態で、まず、第一樹脂３１が発光ダイオード素子４と
金属線６とを被い、次に、第二樹脂３２が発光ダイオー
ド素子４と金属線６とを被った第一樹脂３１を被い、さ
らに、第三樹脂３３がその第二樹脂３２を被ってパッケ
ージ本体を形作るようにして、発光ダイオード素子４と
金属線６とが封止された構成である。An embodiment of the present invention will be described below with reference to the drawings. A configuration of a light emitting diode device according to one embodiment of the present invention is shown in FIG. 1 and will be described. This light emitting diode device 3
Reference numeral 0 denotes a state in which the light emitting diode element 4 die-bonded to the concave portion 3 formed in the die pad 2 at the tip of the lead terminal 1 and the tip 7 of the lead terminal 5 are connected by the metal wire 6. One resin 31 covers the light emitting diode element 4 and the metal wire 6, then the second resin 32 covers the first resin 31 covering the light emitting diode element 4 and the metal wire 6, and further, the third resin A light-emitting diode element 4 and a metal wire 6 are sealed such that a cover 33 forms the package body by covering the second resin 32.
【０００９】この第一樹脂３１は、温度サイクルやハン
ダ付け時の熱等から発光ダイオード素子４や金属線６の
接続部等を保護し、製品の信頼性を高めるために、例え
ば、Ｔｇ値が安定している高純度の透光性のエポキシ樹
脂等が用いられる。ここに、Ｔｇ値が安定していると
は、後述する第一樹脂３１の熱硬化時の条件等に影響さ
れず、硬化したときの第一樹脂３１のＴｇ値がおおよそ
１１５〜１１７°程度で一定していることをいう。な
お、このＴｇ値の範囲より高過ぎると、ハンダ付け時の
加熱や、製品試験における温度サイクル等において樹脂
が膨張、収縮してクラック（ひび割れ）が生じ、金属線
６の断線や発光ダイオード素子４の損傷が発生し、一
方、低過ぎると、ハンダ付け時の加熱等によって樹脂が
軟化し、その樹脂に封止され、固定されているリード端
子１、５がぐらつくことによって、金属線６の接続部で
の断線が発生するので、いずれも好ましくない。The first resin 31 protects the connection portions of the light emitting diode elements 4 and the metal wires 6 and the like from a heat cycle, heat during soldering, and the like, and has a Tg value, for example, in order to improve product reliability. A stable high-purity translucent epoxy resin or the like is used. Here, that the Tg value is stable means that the Tg value of the first resin 31 at the time of curing is about 115 to 117 ° without being affected by the conditions at the time of thermosetting of the first resin 31 described later. It means that it is constant. If the Tg value is too high, the resin expands and contracts due to heating during soldering and temperature cycling in a product test to cause cracks, thereby causing breakage of the metal wire 6 and light emitting diode element 4. On the other hand, if the temperature is too low, the resin is softened by heating during soldering, and the lead terminals 1 and 5 sealed and fixed to the resin fluctuate, thereby connecting the metal wires 6. Any breakage occurs in the part, which is not preferable.
【００１０】また、第二樹脂３２は発光ダイオード素子
４を湿気から保護し、製品の信頼性を高めるために、例
えば、透光性のシリコーン樹脂等が用いられる。The second resin 32 is made of, for example, a light-transmitting silicone resin in order to protect the light emitting diode element 4 from moisture and increase the reliability of the product.
【００１１】さらに、第三樹脂３３は、第一樹脂３１、
第二樹脂３２によって被われた発光ダイオード素子４と
金属線６とを封止し、パッケージ本体を形作るので、成
形特性が良い、例えば、ポリカーボネートやアクリル酸
樹脂、あるいは、成形特性の良いエポキシ樹脂等の透光
性の樹脂が用いられる。なお、上述のように発光ダイオ
ード素子４と金属線６とは第一樹脂３１および第二樹脂
３２で被われているので、第三樹脂３３としてはＴｇ値
の安定性や吸湿性等をそれほど考慮する必要がなく、成
形特性だけを考慮すればよいので、比較的安価な樹脂を
用いることができる。Further, the third resin 33 includes a first resin 31,
Since the light emitting diode element 4 and the metal wire 6 covered by the second resin 32 are sealed to form the package body, the molding properties are good, for example, polycarbonate or acrylic resin, or epoxy resin having good molding properties. Light transmission
Resin is used. Since the light emitting diode element 4 and the metal wire 6 are covered with the first resin 31 and the second resin 32 as described above, the third resin 33 takes into consideration the stability of the Tg value, hygroscopicity, and the like. Since it is not necessary to perform the molding and only the molding characteristics need to be considered, a relatively inexpensive resin can be used.
【００１２】次に、この発光ダイオード装置３０の製造
過程の一例を図２を参照して説明する。まず、図２
（ａ）に示すような、樹脂封止前の発光ダイオード装置
を従来と同様の方法で製造する。すなわち、リード端子
１の先端部のダイパッド２に形成された凹部３に発光ダ
イオード素子４をダイボンディングし、さらに、その発
光ダイオード素子４とリード端子５の先端部７とをワイ
ヤーボンディングによって金属線６で接続する。Next, an example of a manufacturing process of the light emitting diode device 30 will be described with reference to FIG. First, FIG.
A light emitting diode device before resin sealing as shown in (a) is manufactured by a method similar to the conventional method. That is, the light emitting diode element 4 is die-bonded to the concave portion 3 formed in the die pad 2 at the tip of the lead terminal 1, and the light emitting diode element 4 and the tip 7 of the lead terminal 5 are connected to the metal wire 6 by wire bonding. Connect with.
【００１３】次に、この樹脂封止前の発光ダイオード装
置の発光ダイオード素子４と金属線６とを第一樹脂層で
被うために、図２（ｂ）に示すように、溶融した第一樹
脂３１が入れられた第一樹脂槽４１に、発光ダイオード
素子４と金属線６とを浸けて、引き上げる。このとき、
発光ダイオード素子４と金属線６との周りには、第一樹
脂３１の表面張力により第一樹脂３１の層が形成され
る。この状態で、第一樹脂３１を熱硬化させる。Next, in order to cover the light emitting diode element 4 and the metal wire 6 of the light emitting diode device before the resin sealing with the first resin layer, as shown in FIG. The light emitting diode element 4 and the metal wire 6 are immersed in the first resin tank 41 in which the resin 31 has been placed, and are lifted. At this time,
A layer of the first resin 31 is formed around the light emitting diode element 4 and the metal wire 6 by the surface tension of the first resin 31. In this state, the first resin 31 is thermally cured.
【００１４】次に、図２（ｂ）で製造された第一樹脂３
１の層の周りを第二樹脂層で被うために、図２（ｃ）に
示すように、溶融した第二樹脂３２が入れられた第二樹
脂槽４２に、第一樹脂３１に被われた発光ダイオード素
子４と金属線６とを浸けて、引き上げる。このとき、第
一樹脂３１の層の周りには、第二樹脂３２が被着して第
二樹脂３２の層が形成される。この状態で、第二樹脂３
２を熱硬化させる。Next, the first resin 3 manufactured in FIG.
In order to cover the periphery of the first layer with the second resin layer, as shown in FIG. 2C, the first resin 31 is covered with the second resin tank 42 in which the molten second resin 32 is placed. The light emitting diode element 4 and the metal wire 6 are immersed and pulled up. At this time, the second resin 32 is applied around the first resin 31 layer to form the second resin 32 layer. In this state, the second resin 3
2 is heat cured.
【００１５】最後に、図２（ｄ）に示すように、注型法
により第三樹脂３３でパッケージ本体を形成する。すな
わち、第三樹脂３３が注入されたパッケージ本体成形用
の型４３に、第一樹脂３１と第二樹脂３２とで被われた
発光ダイオード素子４と金属線６とを挿入し、第三樹脂
３３を熱硬化させることにより発光ダイオード装置３０
が製造される。Finally, as shown in FIG. 2D, a package body is formed of the third resin 33 by a casting method. That is, the light emitting diode element 4 covered with the first resin 31 and the second resin 32 and the metal wire 6 are inserted into the package molding die 43 into which the third resin 33 has been injected. Light-emitting diode device 30
Is manufactured.
【００１６】なお、上述した製造工程は一例を示すもの
であり、発光ダイオード装置３０の各樹脂層を別の方法
により形成してもよい。The above-described manufacturing process is an example, and each resin layer of the light emitting diode device 30 may be formed by another method.
【００１７】（削除） (Delete)
【００１８】なお、本発明は上述の発光ダイオード装置
に限定されず、樹脂封止型の各種の光学素子に適用する
ことができる。[0018] The present invention is described above the light-emitting diode equipment
The present invention is not limited to this, and can be applied to various resin-sealed optical elements .
【００１９】[0019]
【発明の効果】以上の説明から明らかなように、本発明
によれば、内部素子と、その内部素子とリード端子とを
接続する金属線とを、ガラス転移温度の安定した第一樹
脂層で被うことにより、温度サイクルやハンダ付け時の
熱等から内部素子や金属線の接続部等を保護し、次に、
その第一樹脂層を、吸湿性の小さい第二樹脂層で被うこ
とにより、第一樹脂層で被われた内部素子と金属線とを
湿気から保護し、もって製品の信頼性の向上が図れ、さ
らに、その第二樹脂層を、成形特性の良い第三樹脂層で
被ってパッケージ本体を形作ることにより、樹脂成形工
程の作業効率の向上が図れる。すなわち、製品の信頼性
や製造工程の作業効率向上のために要求される樹脂の特
性を各樹脂層で実現することができる。また、温度サイ
クルやハンダ付け時の熱等から内部素子や金属線の接続
部等を保護するための高信頼性の高価な第一樹脂層は、
内部素子や金属線の周りだけに使用し、湿気から内部素
子を保護するための比較的高価な第二樹脂層も、第一樹
脂層の周りだけに使用しており、パッケージ本体を形成
するために前記第一、第二樹脂層よりも多量に使用され
る第三樹脂層としては、比較的安価なものを選択できる
ので、全体として樹脂のコストの低減が図れ、製造コス
トを下げることができる。As is apparent from the above description, according to the present invention, the internal element and the metal wire connecting the internal element and the lead terminal are formed by the first resin layer having a stable glass transition temperature. Covering protects internal elements and metal wire connections from temperature cycling and heat during soldering.
By covering the first resin layer with the second resin layer having a small hygroscopic property, the internal element and the metal wire covered with the first resin layer are protected from moisture, thereby improving the reliability of the product. Furthermore, by covering the second resin layer with a third resin layer having good molding characteristics to form a package body, the work efficiency of the resin molding process can be improved. That is, the characteristics of the resin required for improving the reliability of the product and the work efficiency in the manufacturing process can be realized in each resin layer. In addition, the highly reliable and expensive first resin layer for protecting the internal elements and the connection portions of the metal wires, etc. from heat during temperature cycling or soldering,
Used only around the internal elements and metal wires, a relatively expensive second resin layer to protect the internal elements from moisture is also used only around the first resin layer to form the package body As the third resin layer used in a larger amount than the first and second resin layers, a relatively inexpensive one can be selected, so that the cost of the resin as a whole can be reduced and the manufacturing cost can be reduced. .
【図１】本発明の一実施例に係る発光ダイオード装置の
構成を示す断面図である。FIG. 1 is a sectional view showing a configuration of a light emitting diode device according to one embodiment of the present invention.
【図２】実施例装置の製造工程を説明するための図であ
る。FIG. 2 is a diagram for explaining a manufacturing process of the example device.
【図３】従来例に係る発光ダイオード装置の構成を示す
断面図である。 FIG. 3 shows a configuration of a light emitting diode device according to a conventional example .
It is sectional drawing.
【図４】従来例に係る発光ダイオード装置の構成を示す
断面図である。 FIG. 4 shows a configuration of a light emitting diode device according to a conventional example .
It is sectional drawing.
１、５ … リード端子 ２ … ダイパッド ３ … 凹部 ４ … 発光ダイオード素子 ６ … 金属線 ３０ … 発光ダイオード装置 ３１ … 第一樹脂 ３２ … 第二樹脂 ３３ … 第三樹脂 1, 5 ... lead terminal 2 ... die pad 3 ... recess 4 ... light emitting diode element 6 ... metal wire 30 ... light emitting diode device 31 ... first resin 32 ... second resin 33 ... third resin
Claims (1)
とを接続する金属線とが樹脂封止された光学素子におい
て、 前記内部素子と前記金属線とを被う透光性の第一樹脂層
と、 前記第一樹脂層を被う透光性の第二樹脂層と、 前記第二樹脂層を被ってパッケージ本体を形作る透光性
の第三樹脂層と、 を備え、 前記第一樹脂層は、前記各樹脂層の中で最もガラス転移
温度の安定した樹脂であり、 前記第二樹脂層は、前記各樹脂層の中で最も吸湿性の小
さい樹脂であり、 前記第三樹脂層は、前記各樹脂層の中で最も成形特性の
良い樹脂であることを特徴とする樹脂封止型光学素子。An optical element in which an internal element and a metal wire connecting the internal element and a lead terminal are sealed with a resin, and a light transmission covering the internal element and the metal wire. translucent shaping a first resin layer of sex, the a first resin layer second resin layer of the translucent covering and the packaging body to cover the second resin layer
It includes a third resin layer, wherein the first resin layer, said the most the glass transition temperature stable resin in each resin layer, said second resin layer is the most in each resin layer The resin-encapsulated optical element , wherein the resin is a resin having a small hygroscopic property, and the third resin layer is a resin having the best molding property among the resin layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18440492A JP3183715B2 (en) | 1992-06-18 | 1992-06-18 | Resin-sealed optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18440492A JP3183715B2 (en) | 1992-06-18 | 1992-06-18 | Resin-sealed optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH065928A JPH065928A (en) | 1994-01-14 |
| JP3183715B2 true JP3183715B2 (en) | 2001-07-09 |
Family
ID=16152579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18440492A Expired - Fee Related JP3183715B2 (en) | 1992-06-18 | 1992-06-18 | Resin-sealed optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3183715B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3957438B2 (en) * | 2000-01-31 | 2007-08-15 | 三洋電機株式会社 | LED light emitting device and manufacturing method thereof |
| JP4017474B2 (en) * | 2002-08-29 | 2007-12-05 | 岡谷電機産業株式会社 | Light emitting diode |
| US7868343B2 (en) | 2004-04-06 | 2011-01-11 | Cree, Inc. | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
| JP2007214252A (en) * | 2006-02-08 | 2007-08-23 | Fuji Xerox Co Ltd | Semiconductor laser device |
-
1992
- 1992-06-18 JP JP18440492A patent/JP3183715B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH065928A (en) | 1994-01-14 |
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