JPH07211458A - 薄膜発光素子 - Google Patents
薄膜発光素子Info
- Publication number
- JPH07211458A JPH07211458A JP6002863A JP286394A JPH07211458A JP H07211458 A JPH07211458 A JP H07211458A JP 6002863 A JP6002863 A JP 6002863A JP 286394 A JP286394 A JP 286394A JP H07211458 A JPH07211458 A JP H07211458A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- light emitting
- thin film
- emitting device
- intermediate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 51
- 239000011521 glass Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000012788 optical film Substances 0.000 claims abstract description 28
- 238000000295 emission spectrum Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000001902 propagating effect Effects 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims 1
- 239000011147 inorganic material Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003405 preventing effect Effects 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Luminescent Compositions (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6002863A JPH07211458A (ja) | 1994-01-17 | 1994-01-17 | 薄膜発光素子 |
| GB9500767A GB2286081A (en) | 1994-01-17 | 1995-01-16 | Thin film light-emitting element |
| FR9500412A FR2715262A1 (fr) | 1994-01-17 | 1995-01-16 | Elément émetteur de lumière à couches minces. |
| DE1995101229 DE19501229A1 (de) | 1994-01-17 | 1995-01-17 | Dünnschicht-Lichtemissions-Element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6002863A JPH07211458A (ja) | 1994-01-17 | 1994-01-17 | 薄膜発光素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07211458A true JPH07211458A (ja) | 1995-08-11 |
Family
ID=11541216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6002863A Pending JPH07211458A (ja) | 1994-01-17 | 1994-01-17 | 薄膜発光素子 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH07211458A (de) |
| DE (1) | DE19501229A1 (de) |
| FR (1) | FR2715262A1 (de) |
| GB (1) | GB2286081A (de) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003077680A (ja) * | 2001-09-06 | 2003-03-14 | Konica Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
| JP2005208603A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2005242338A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2005242339A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2006511045A (ja) * | 2002-12-20 | 2006-03-30 | アイファイアー・テクノロジー・コープ | 厚膜誘電性エレクトロルミネッセンスディスプレイ用のバリア層 |
| US7187121B2 (en) | 2002-04-09 | 2007-03-06 | Canon Kabushiki Kaisha | Organic luminescence device with anti-reflection layer and organic luminescence device package |
| US7274044B2 (en) | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7315047B2 (en) | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2008282053A (ja) * | 2001-03-22 | 2008-11-20 | Lumimove Inc | エレクトロルミネセントサイン |
| US7476908B2 (en) | 2004-05-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7495257B2 (en) | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7554263B2 (en) | 2003-02-12 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having transparent film varying refractive index and manufacturing method thereof |
| US7687404B2 (en) | 2004-05-14 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7851997B2 (en) | 2006-06-02 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
| JP2012506607A (ja) * | 2008-10-24 | 2012-03-15 | サン−ゴバン グラス フランス | 電極を備えたガラス基板、特に有機発光ダイオード素子に用いられる基板 |
| WO2016151819A1 (ja) * | 2015-03-25 | 2016-09-29 | パイオニア株式会社 | 発光装置 |
| US9751267B2 (en) | 2011-02-14 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Optical element, light-emitting device, lighting device, and method for manufacturing optical element |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9609282D0 (en) | 1996-05-03 | 1996-07-10 | Cambridge Display Tech Ltd | Protective thin oxide layer |
| US6963168B2 (en) | 2000-08-23 | 2005-11-08 | Idemitsu Kosan Co., Ltd. | Organic EL display device having certain relationships among constituent element refractive indices |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104555A (en) * | 1977-01-27 | 1978-08-01 | Atkins & Merrill, Inc. | High temperature encapsulated electroluminescent lamp |
| US4159443A (en) * | 1978-07-18 | 1979-06-26 | Bell Telephone Laboratories, Incorporated | Electroluminescent optical devices |
| DE3231727A1 (de) * | 1981-09-21 | 1983-04-07 | Sun Chemical Corp., New York, N.Y. | Elektrolumineszente anzeigevorrichtung |
| US5003221A (en) * | 1987-08-29 | 1991-03-26 | Hoya Corporation | Electroluminescence element |
| CA1302547C (en) * | 1988-12-02 | 1992-06-02 | Jerzy A. Dobrowolski | Optical interference electroluminescent device having low reflectance |
| US5072152A (en) * | 1990-02-05 | 1991-12-10 | Planar Systems, Inc. | High brightness TFEL device and method of making same |
| JP3274527B2 (ja) * | 1992-09-22 | 2002-04-15 | 株式会社日立製作所 | 有機発光素子とその基板 |
-
1994
- 1994-01-17 JP JP6002863A patent/JPH07211458A/ja active Pending
-
1995
- 1995-01-16 FR FR9500412A patent/FR2715262A1/fr active Pending
- 1995-01-16 GB GB9500767A patent/GB2286081A/en not_active Withdrawn
- 1995-01-17 DE DE1995101229 patent/DE19501229A1/de not_active Withdrawn
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008282053A (ja) * | 2001-03-22 | 2008-11-20 | Lumimove Inc | エレクトロルミネセントサイン |
| JP2003077680A (ja) * | 2001-09-06 | 2003-03-14 | Konica Corp | 有機エレクトロルミネッセンス素子及び表示装置 |
| US7187121B2 (en) | 2002-04-09 | 2007-03-06 | Canon Kabushiki Kaisha | Organic luminescence device with anti-reflection layer and organic luminescence device package |
| US7332859B2 (en) | 2002-04-09 | 2008-02-19 | Canon Kabushiki Kaisha | Organic luminescence device with anti-reflection layer and organic luminescence device package |
| JP2006511045A (ja) * | 2002-12-20 | 2006-03-30 | アイファイアー・テクノロジー・コープ | 厚膜誘電性エレクトロルミネッセンスディスプレイ用のバリア層 |
| JP2010171027A (ja) * | 2002-12-20 | 2010-08-05 | Ifire Ip Corp | 厚膜誘電性エレクトロルミネッセンスディスプレイ用のバリア層 |
| US7989088B2 (en) | 2002-12-20 | 2011-08-02 | Ifire Ip Corporation | Barrier layer for thick film dielectric electroluminescent displays |
| US7554263B2 (en) | 2003-02-12 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device having transparent film varying refractive index and manufacturing method thereof |
| US9911800B2 (en) | 2003-12-26 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US9583545B2 (en) | 2003-12-26 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US9196638B2 (en) | 2003-12-26 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2005208603A (ja) * | 2003-12-26 | 2005-08-04 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8624257B2 (en) | 2003-12-26 | 2014-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7495257B2 (en) | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7274044B2 (en) | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7977685B2 (en) | 2004-01-26 | 2011-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US8669567B2 (en) | 2004-01-26 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7315047B2 (en) | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| JP2005242339A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP2005242338A (ja) * | 2004-01-26 | 2005-09-08 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US7687404B2 (en) | 2004-05-14 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US7476908B2 (en) | 2004-05-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7851997B2 (en) | 2006-06-02 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
| JP2012506607A (ja) * | 2008-10-24 | 2012-03-15 | サン−ゴバン グラス フランス | 電極を備えたガラス基板、特に有機発光ダイオード素子に用いられる基板 |
| US9751267B2 (en) | 2011-02-14 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Optical element, light-emitting device, lighting device, and method for manufacturing optical element |
| WO2016151819A1 (ja) * | 2015-03-25 | 2016-09-29 | パイオニア株式会社 | 発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9500767D0 (en) | 1995-03-08 |
| DE19501229A1 (de) | 1995-07-20 |
| GB2286081A (en) | 1995-08-02 |
| FR2715262A1 (fr) | 1995-07-21 |
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