JPH07206527A - Silicon nitride-based sintered compact and its production - Google Patents

Silicon nitride-based sintered compact and its production

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Publication number
JPH07206527A
JPH07206527A JP6001537A JP153794A JPH07206527A JP H07206527 A JPH07206527 A JP H07206527A JP 6001537 A JP6001537 A JP 6001537A JP 153794 A JP153794 A JP 153794A JP H07206527 A JPH07206527 A JP H07206527A
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JP
Japan
Prior art keywords
silicon nitride
weight
powder
aluminum oxide
sintered compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP6001537A
Other languages
Japanese (ja)
Inventor
Katsunori Akiyama
勝徳 秋山
Yuichiro Murakami
勇一郎 村上
Hiroichi Yamamoto
博一 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
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Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP6001537A priority Critical patent/JPH07206527A/en
Publication of JPH07206527A publication Critical patent/JPH07206527A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To improve high-temperature strength of a silicon nitride-based sintered compact by blending silicon nitride with aluminum oxide and ytterbium oxide in a prescribed ratio and then sintering the blend. CONSTITUTION:This silicon nitride sintered compact is produced by forming mixed powder containing 70-97wt.% of silicon nitride powder, 2-30wt.% of ytterbium oxide powder and <=5wt.% of aluminum oxide powder and having >=5 weight ratio of ytterbium powder to aluminum oxide powder and then, sintering the formed material in a nitrogen gas atmosphere at 1700-2100 deg.C for <=9hr. In this reaction, impurities of these elements each is kept to <=100ppm. In this invention, since a boundary part of the silicon nitride sintered compact is packed with an Yb-Si-O-N based or an Al-Yb-Si-O-N based oxide nitride glass phase having high high-temperature characteristics, produced by reaction with a component added as an auxiliary, a silicon nitride-based sintered compact hardly lowering strength in high temperature load and excellent also in oxidation resistance can inexpensively be produced by a conventional ordinary pressure sintering method.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は高温、高強度、耐酸化
性、耐摩耗性等が要求される機械部品に用いる窒化珪素
質焼結体とその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon nitride-based sintered body for use in mechanical parts which are required to have high temperature, high strength, oxidation resistance, wear resistance and the like, and a method for producing the same.

【0002】[0002]

【従来の技術】窒化珪素焼結体は難焼結体であるため、
焼結助剤として酸化アルミニウム、酸化イットリウム等
を添加して焼結する方法が用いられているが、これらの
助剤成分は焼結後にガラス相として粒界に残り、このガ
ラス相が高温で軟化することにより、高温特性を低下さ
せることが知られている。高温強度向上のためには、助
剤の絶対量を減少させ、ホットプレス、あるいはHIP
等の特殊な方法で強制的に焼結することが行われている
が、耐酸化性等について効果的な対策はほとんど行われ
てない。
2. Description of the Related Art Since a silicon nitride sintered body is a difficult sintered body,
A method of sintering by adding aluminum oxide, yttrium oxide, etc. as a sintering aid is used, but these auxiliary components remain at the grain boundaries as a glass phase after sintering, and this glass phase softens at high temperature. It is known that by doing so, the high temperature characteristics are degraded. In order to improve the high temperature strength, the absolute amount of the auxiliary agent should be reduced and hot pressing or HIP
Forcible sintering is carried out by a special method such as, but almost no effective countermeasures are taken for oxidation resistance.

【0003】[0003]

【発明が解決しようとする課題】本発明は焼結助剤とし
て、酸化イッテルビウム又は酸化イッテルビウムと酸化
アルミニウムの混合系を使用し、その量、組成比の適正
化を図ることによって通常の常圧焼結であっても緻密に
焼結し、かつ高温強度、耐酸化性等の高温特性の低下の
少ない窒化珪素焼結体とその製造方法を提供しようとす
るものである。
DISCLOSURE OF THE INVENTION The present invention uses ytterbium oxide or a mixed system of ytterbium oxide and aluminum oxide as a sintering aid, and optimizes the amount and composition ratio of the ordinary atmospheric pressure baking. An object of the present invention is to provide a silicon nitride sintered body which is densely sintered even if it is bonded and has little deterioration in high temperature characteristics such as high temperature strength and oxidation resistance, and a method for producing the same.

【0004】[0004]

【課題を解決するための手段】本発明は (1)窒化珪素:70〜97重量%及び酸化イッテルビ
ウム:2〜30重量%を含有してなることを特徴とする
窒化珪素質焼結体。 (2)窒化珪素粉末:70〜97重量%及び酸化イッテ
ルビウム粉末:2〜30重量%よりなる混合粉体を成型
し、窒素ガス雰囲気中で1700〜2100℃で焼結す
ることを特徴とする窒化珪素質焼結体の製造方法。 (3)窒化珪素:70〜97重量%、酸化イッテルビウ
ム:2〜30重量%及び酸化アルミニウム:5重量%以
下を含有してなることを特徴とする窒化珪素質焼結体。 (4)窒化珪素粉末:70〜97重量%、酸化イッテル
ビウム粉末:2〜30重量%及び酸化アルミニウム粉
末:5重量%以下よりなる混合粉末を成型し、窒素ガス
雰囲気中で1700〜2100℃で焼結することを特徴
とする窒化珪素質焼結体の製造方法。 (5)窒化珪素:70〜97重量%、酸化イッテルビウ
ム:2〜30重量%及び酸化アルミニウム:5重量%以
下を含有してなり、かつ酸化アルミニウムに対する酸化
イッテルビウムの重量比が5以上であることを特徴とす
る窒化珪素質焼結体。 (6)窒化珪素粉末:70〜97重量%、酸化イッテル
ビウム粉末:2〜30重量%及び酸化アルミニウム粉
末:5重量%以下を含有してなり、かつ酸化アルミニウ
ム粉末に対する酸化イッテルビウム粉末の重量比が5以
上よりなる混合粉末を成型し、窒素ガス雰囲気中で17
00〜2100℃で焼結することを特徴とする窒化珪素
質焼結体の製造方法。である。
The present invention provides (1) a silicon nitride-based sintered body characterized by containing 70 to 97% by weight of silicon nitride and 2 to 30% by weight of ytterbium oxide. (2) Silicon nitride powder: 70 to 97% by weight and ytterbium oxide powder: 2 to 30% by weight, mixed powder is molded and sintered at 1700 to 2100 ° C. in a nitrogen gas atmosphere. A method for manufacturing a silicon-based sintered body. (3) Silicon nitride: 70 to 97% by weight, ytterbium oxide: 2 to 30% by weight, and aluminum oxide: 5% by weight or less, a silicon nitride-based sintered body. (4) Molding a mixed powder of silicon nitride powder: 70 to 97% by weight, ytterbium oxide powder: 2 to 30% by weight, and aluminum oxide powder: 5% by weight or less, and firing at 1700 to 2100 ° C. in a nitrogen gas atmosphere. A method for manufacturing a silicon nitride-based sintered body, comprising: (5) Silicon nitride: 70 to 97% by weight, ytterbium oxide: 2 to 30% by weight and aluminum oxide: 5% by weight or less, and the weight ratio of ytterbium oxide to aluminum oxide is 5 or more. A characteristic silicon nitride sintered body. (6) Silicon nitride powder: 70 to 97% by weight, ytterbium oxide powder: 2 to 30% by weight and aluminum oxide powder: 5% by weight or less, and the weight ratio of the ytterbium oxide powder to the aluminum oxide powder is 5%. The mixed powder consisting of the above is molded and then molded in a nitrogen gas atmosphere.
A method for producing a silicon nitride-based sintered body, which comprises sintering at 00 to 2100 ° C. Is.

【0005】[0005]

【作用】本発明によると、窒化珪素質焼結体の粒界部を
助剤として添加した成分が反応した結果生成した高温特
性の高いYb−Si−O−N系もしくはAl−Yb−S
i−O−N系の酸窒化物ガラス相で充填したことによ
り、高温負荷時において強度の低下が少なく、耐酸化性
にも優れた高い信頼性をもつ窒化珪素質焼結体を、通常
の常圧焼結法で製造することにより安価で提供される。
以下、更に本発明に係わる数値限定の理由を説明する。
According to the present invention, a Yb-Si-O-N system or Al-Yb-S system having high temperature characteristics, which is generated as a result of the reaction of the component added with the grain boundary portion of the silicon nitride sintered body as an auxiliary agent, is obtained.
By filling with the i-O-N-based oxynitride glass phase, a silicon nitride-based sintered body having high reliability with little decrease in strength under high temperature load and excellent in oxidation resistance can be obtained. It can be provided at low cost by manufacturing it by the atmospheric pressure sintering method.
The reason for limiting the numerical values according to the present invention will be described below.

【0006】(1)窒化珪素:70〜97重量% 窒化珪素粉末は窒化珪素焼結体を作製する際の主剤とな
るもので、70重量%未満であると相対的に助剤の量が
多すぎて焼結の際に変形が著しくなり、室温、高温にお
いて強度を発現することが不可能で、窒化珪素焼結体の
一般的な特徴である優れた機械的性質がすべて失われて
しまう。一方、97重量%を越えると相対的に助剤の量
が少なくなり、焼結性に問題のない量であっても、高温
強度を発現できない。より好ましくは、76〜92重量
%である。
(1) Silicon Nitride: 70 to 97% by Weight Silicon nitride powder is a main agent for producing a silicon nitride sintered body. If it is less than 70% by weight, the amount of the auxiliary agent is relatively large. As a result, the deformation becomes remarkable during sintering, strength cannot be exhibited at room temperature and high temperature, and all the excellent mechanical properties that are general features of the silicon nitride sintered body are lost. On the other hand, if it exceeds 97% by weight, the amount of the auxiliary agent becomes relatively small, and even if the amount is such that the sinterability is not a problem, high temperature strength cannot be exhibited. More preferably, it is 76 to 92% by weight.

【0007】(2)酸化アルミニウム:5重量%以下 酸化アルミニウムは酸化イッテルビウム及び窒化珪素粉
末に酸化層として存在する酸化珪素と共に焼結温度付近
で反応、融解し、窒化珪素焼結体作製時の助剤として作
用し、緻密化に貢献するが、高温強度を低下させる作用
ももつ。よって高温強度を低下させないためには酸化ア
ルミニウムの量を少なくすること、すなわち添加しない
ことが好ましいが、添加しないと焼結が不十分になるた
め、強度の絶対値が低くなる。5重量%を越えると焼結
性は良好で十分緻密化するが、高温強度の低下が著し
い。より好ましくは、0.2〜2.2重量%である。
(2) Aluminum oxide: 5% by weight or less Aluminum oxide reacts and melts with ytterbium oxide and silicon oxide existing as an oxide layer in the silicon nitride powder at a temperature near the sintering temperature to assist in the production of a silicon nitride sintered body. It acts as an agent and contributes to densification, but also has the effect of reducing high temperature strength. Therefore, in order not to reduce the high temperature strength, it is preferable to reduce the amount of aluminum oxide, that is, it is preferable not to add it. However, if it is not added, the sintering becomes insufficient and the absolute value of the strength becomes low. If it exceeds 5% by weight, the sinterability is good and the composition is sufficiently densified, but the high temperature strength is significantly reduced. More preferably, it is 0.2 to 2.2% by weight.

【0008】(3)酸化イッテルビウム:2〜30重量
% 酸化イッテルビウムは酸化アルミニウム及び窒化珪素粉
末に酸化層として存在する酸化珪素と共に焼結温度付近
で反応、融解し、窒化珪素焼結体作製時の助剤として作
用し、高温強度の低下を防ぐ作用をもつ。また、酸化ア
ルミニウムを使用しない場合であっても、高度に制御さ
れた条件下では酸化イッテルビウムと酸化珪素のみによ
って助剤としての作用をはたせる。この場合には金属元
素がひとつ少なくなるので、より共晶温度が上昇し、高
温強度の低下を防ぐ効果が高い。よって2重量%未満で
あると、焼結性が悪化し十分緻密化することが困難で高
温強度の低下が著しい。30重量%を越えると、相対的
に酸化アルミニウムの量が少なくなり、焼結性が低下し
て強度が低下する。より好ましくは、3.2〜23重量
%である。なお、上記いずれの原料も平均粒径2μm以
下とするのが好ましい。
(3) Ytterbium oxide: 2 to 30% by weight Ytterbium oxide reacts and melts with aluminum oxide and silicon oxide existing as an oxide layer in the silicon nitride powder near the sintering temperature to produce a silicon nitride sintered body. It acts as an auxiliary agent and has the effect of preventing the deterioration of high temperature strength. Further, even if aluminum oxide is not used, only ytterbium oxide and silicon oxide act as an auxiliary agent under highly controlled conditions. In this case, since the amount of the metal element is reduced by one, the eutectic temperature is further increased, and the effect of preventing the decrease in high temperature strength is high. Therefore, if it is less than 2% by weight, the sinterability is deteriorated, it is difficult to sufficiently densify, and the high temperature strength is remarkably reduced. If it exceeds 30% by weight, the amount of aluminum oxide is relatively small, the sinterability is lowered and the strength is lowered. More preferably, it is 3.2 to 23% by weight. In addition, it is preferable that all the above raw materials have an average particle diameter of 2 μm or less.

【0009】(4)酸化アルミニウム粉末に対する酸化
イッテルビウム粉末の重量比:5以上 酸化イッテルビウムと酸化アルミニウムは焼結温度付近
で反応、融解し、窒化珪素焼結体作製時の助剤として作
用し、焼結後は主として粒界中にガラス相として存在
し、高温特性を支配する。この比が5未満であると、高
温強度が低下する。またこの比があまり大きすぎると、
焼結性が低下するので、より好ましくは、10〜20で
ある。
(4) Weight ratio of ytterbium oxide powder to aluminum oxide powder: 5 or more Ytterbium oxide and aluminum oxide react and melt near the sintering temperature, and act as an auxiliary agent during the production of a silicon nitride sintered body, and then burned. After binding, it exists mainly as a glass phase in the grain boundaries and controls the high temperature characteristics. When this ratio is less than 5, the high temperature strength decreases. If this ratio is too large,
Since the sinterability decreases, it is more preferably 10 to 20.

【0010】(5)不純物は、いずれの元素にせよ10
0ppm以下が望ましい。
(5) Impurities may be any element 10
0 ppm or less is desirable.

【0011】(6)窒素ガス雰囲気 窒素ガス加圧雰囲気は窒化珪素が高温で昇華するのを防
ぐために行うものである。なお、10kg/cm2 を越
えると高圧ガス取締法による適用を受け、ガスの製造、
容器の取扱等に厳しい規制を受けるため、実際の製品の
製造に不利でありコストにもひびくので、できれば10
kg/cm2 以下が望ましい。より好ましくは6〜9.
9kg/cm2 である。
(6) Nitrogen gas atmosphere The nitrogen gas pressurized atmosphere is used to prevent silicon nitride from sublimating at high temperature. If the pressure exceeds 10 kg / cm 2 , the high pressure gas control method will apply the gas
It is disadvantageous in the actual production of the product because it is subject to strict regulations regarding the handling of containers, and it also increases the cost.
It is preferably less than kg / cm 2 . More preferably 6-9.
It is 9 kg / cm 2 .

【0012】(7)1700〜2100℃で焼成 セラミックス材料は粉体を焼き固めて焼結して作製す
る。焼結させる時に焼成が必要となるが、窒化珪素の場
合は助剤を添加して焼結させ易くしているものの、基本
的に難焼結性であって焼結には高い焼成温度が必要とな
る。1700℃未満の温度では助剤が反応、融解しない
こともあってほとんど焼結せず緻密化しない。また21
00℃を超える温度であると窒化珪素が昇華してしまい
同じく緻密化しない。より好ましくは1750〜195
0℃である。
(7) Firing at 1700 to 2100 ° C. The ceramic material is produced by baking and sintering powder. Although firing is required at the time of sintering, in the case of silicon nitride, although an auxiliary agent is added to facilitate sintering, it is basically difficult to sinter and a high firing temperature is required for sintering. Becomes At a temperature of less than 1700 ° C, the auxiliary agent does not react or melt, so that it hardly sinters and does not densify. Again 21
If the temperature exceeds 00 ° C., the silicon nitride sublimes and similarly does not densify. More preferably 1750-195
It is 0 ° C.

【0013】(8)焼成時間 焼成時間は特に限定はないが、セラミックス材料を焼成
する際、ごく通常の外部加熱炉を用いると試料の表面と
内部で熱伝導の差により温度差が少なからず生じてしま
うので、目的温度まで昇温後、ある程度の時間の保持は
必要である。なお、10時間以上の保持しても、もはや
焼結はそれほど進まず、コストの点からも意味がなくな
るので、できればそれ以下がよい。より好ましくは9時
間以下である。
(8) Firing time The firing time is not particularly limited, but when firing a ceramic material, if a normal external heating furnace is used, a difference in temperature between the surface and the inside of the sample causes a considerable temperature difference. Therefore, it is necessary to maintain the temperature for some time after the temperature is raised to the target temperature. Even if it is held for 10 hours or more, the sintering does not proceed so much, and it is meaningless from the viewpoint of cost. It is more preferably 9 hours or less.

【0014】[0014]

【実施例】試験に供した原料粉末は窒化珪素原料粉末が
平均粒径0.5μm(結晶子径は0.2μm以下)の高
純度粉末を、焼結助剤の酸化イッテルビウムは平均粒径
が1.2μmの粉末を、酸化アルミニウムは平均粒径が
0.8μmの粉末を用いた。各粉末の配合比としては表
1に示したとおりである。なお本例のすべての試験につ
いて、分散剤としてはポリエチレンイミン系のものを、
溶媒としては1−ブチルアルコールを用いた湿式混合、
粉砕法によった。
EXAMPLE The raw material powder used in the test was a high-purity powder of silicon nitride raw material powder having an average particle diameter of 0.5 μm (crystallite diameter of 0.2 μm or less), and the sintering aid ytterbium oxide had an average particle diameter of 0.5 μm. 1.2 μm powder and aluminum oxide powder having an average particle size of 0.8 μm were used. The compounding ratio of each powder is as shown in Table 1. For all tests in this example, a polyethyleneimine-based dispersant was used.
Wet mixing using 1-butyl alcohol as a solvent,
According to the crushing method.

【0015】窒化珪素質焼結体の作製に際し、まず混合
には原料粉末100重量%に対し、ポリエチレンイミン
系分散剤2.1重量%、1−ブチルアルコール溶媒3
3.3重量%を加え、ジルコニアボールを用いて均一に
混合した後、乾燥しプレスで直径60mmφ、約6mm
の円盤状に成型し、4t/cm2 の圧力で静水圧プレス
して成型体を得た。この成型体を真空中で500℃まで
加熱し、1時間保持して脱脂した後、窒素ガス9.9k
g毎平方センチメートルの加圧下、毎分1℃で1800
〜1900℃まで昇温し、4時間焼結した。これらの条
件によって作製した本発明による焼結体の高温強度を表
1に示す。これによると従来の方法による焼結体の高温
強度を示した表2と比較して、高温強度の低下が大幅に
抑えられ、また、耐酸化性も向上し、高温下での信頼性
を高めるものとなった。
In producing a silicon nitride sintered body, first, for mixing, 2.1% by weight of a polyethyleneimine-based dispersant and 100% by weight of raw material powder, and 1-butyl alcohol solvent 3 are mixed.
3.3% by weight was added, and the mixture was uniformly mixed using zirconia balls, then dried and pressed with a diameter of 60 mmφ, about 6 mm.
And was hydrostatically pressed at a pressure of 4 t / cm 2 to obtain a molded body. This molded body was heated to 500 ° C. in a vacuum, held for 1 hour to degrease, and then nitrogen gas 9.9 k
1800 at 1 ° C / min under pressure of sq.cm.
The temperature was raised to ˜1900 ° C. and sintered for 4 hours. Table 1 shows the high temperature strength of the sintered body according to the present invention produced under these conditions. According to this, compared with Table 2 showing the high temperature strength of the sintered body by the conventional method, the decrease in high temperature strength is significantly suppressed, the oxidation resistance is also improved, and the reliability at high temperature is increased. It became a thing.

【0016】[0016]

【表1】 [Table 1]

【0017】[0017]

【表2】 [Table 2]

【0018】[0018]

【発明の効果】本発明により、高温強度の低下が大幅に
抑えられ、高温強度の高い窒化珪素質焼結体を極一般的
な製造方法によって安価に提供することができ、産業上
の利用価値が大きい。
EFFECTS OF THE INVENTION According to the present invention, a decrease in high temperature strength can be significantly suppressed, and a silicon nitride sintered body having high high temperature strength can be provided at a low cost by a very general manufacturing method. Is big.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 窒化珪素:70〜97重量%及び酸化イ
ッテルビウム:2〜30重量%を含有してなることを特
徴とする窒化珪素質焼結体。
1. A silicon nitride-based sintered body comprising silicon nitride: 70 to 97% by weight and ytterbium oxide: 2 to 30% by weight.
【請求項2】 窒化珪素粉末:70〜97重量%及び酸
化イッテルビウム粉末:2〜30重量%よりなる混合粉
体を成型し、窒素ガス雰囲気中で1700〜2100℃
で焼結することを特徴とする窒化珪素質焼結体の製造方
法。
2. A mixed powder consisting of 70 to 97% by weight of silicon nitride powder and 2 to 30% by weight of ytterbium oxide powder is molded and molded in a nitrogen gas atmosphere at 1700 to 2100 ° C.
A method for manufacturing a silicon nitride sintered body, comprising:
【請求項3】 窒化珪素:70〜97重量%、酸化イッ
テルビウム:2〜30重量%及び酸化アルミニウム:5
重量%以下を含有してなることを特徴とする窒化珪素質
焼結体。
3. Silicon nitride: 70 to 97% by weight, ytterbium oxide: 2 to 30% by weight, and aluminum oxide: 5
A silicon nitride sintered body characterized by containing less than or equal to wt%.
【請求項4】 窒化珪素粉末:70〜97重量%、酸化
イッテルビウム粉末:2〜30重量%及び酸化アルミニ
ウム粉末:5重量%以下よりなる混合粉末を成型し、窒
素ガス雰囲気中で1700〜2100℃で焼結すること
を特徴とする窒化珪素質焼結体の製造方法。
4. A mixed powder comprising silicon nitride powder: 70 to 97% by weight, ytterbium oxide powder: 2 to 30% by weight, and aluminum oxide powder: 5% by weight or less is molded and molded in a nitrogen gas atmosphere at 1700 to 2100 ° C. A method for manufacturing a silicon nitride sintered body, comprising:
【請求項5】 窒化珪素:70〜97重量%、酸化イッ
テルビウム:2〜30重量%及び酸化アルミニウム:5
重量%以下を含有してなり、かつ酸化アルミニウムに対
する酸化イッテルビウムの重量比が5以上であることを
特徴とする窒化珪素質焼結体。
5. Silicon nitride: 70 to 97% by weight, ytterbium oxide: 2 to 30% by weight, and aluminum oxide: 5
A silicon nitride sintered body containing less than or equal to 5% by weight and having a weight ratio of ytterbium oxide to aluminum oxide of 5 or more.
【請求項6】 窒化珪素粉末:70〜97重量%、酸化
イッテルビウム粉末:2〜30重量%及び酸化アルミニ
ウム粉末:5重量%以下を含有してなり、かつ酸化アル
ミニウム粉末に対する酸化イッテルビウム粉末の重量比
が5以上よりなる混合粉末を成型し、窒素ガス雰囲気中
で1700〜2100℃で焼結することを特徴とする窒
化珪素質焼結体の製造方法。
6. A silicon nitride powder: 70 to 97% by weight, a ytterbium oxide powder: 2 to 30% by weight, and an aluminum oxide powder: 5% by weight or less, and a weight ratio of the ytterbium oxide powder to the aluminum oxide powder. 5. A method for producing a silicon nitride sintered body, which comprises molding a mixed powder of 5 or more and sintering at 1700 to 2100 ° C. in a nitrogen gas atmosphere.
JP6001537A 1994-01-12 1994-01-12 Silicon nitride-based sintered compact and its production Withdrawn JPH07206527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6001537A JPH07206527A (en) 1994-01-12 1994-01-12 Silicon nitride-based sintered compact and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6001537A JPH07206527A (en) 1994-01-12 1994-01-12 Silicon nitride-based sintered compact and its production

Publications (1)

Publication Number Publication Date
JPH07206527A true JPH07206527A (en) 1995-08-08

Family

ID=11504279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6001537A Withdrawn JPH07206527A (en) 1994-01-12 1994-01-12 Silicon nitride-based sintered compact and its production

Country Status (1)

Country Link
JP (1) JPH07206527A (en)

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