JPH071793Y2 - 半導体ウエハの面取り構造 - Google Patents
半導体ウエハの面取り構造Info
- Publication number
- JPH071793Y2 JPH071793Y2 JP1989143313U JP14331389U JPH071793Y2 JP H071793 Y2 JPH071793 Y2 JP H071793Y2 JP 1989143313 U JP1989143313 U JP 1989143313U JP 14331389 U JP14331389 U JP 14331389U JP H071793 Y2 JPH071793 Y2 JP H071793Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chamfered
- thickness
- cutting
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 8
- 238000003754 machining Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 73
- 238000005520 cutting process Methods 0.000 description 30
- 239000002994 raw material Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989143313U JPH071793Y2 (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの面取り構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989143313U JPH071793Y2 (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの面取り構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0381627U JPH0381627U (enrdf_load_stackoverflow) | 1991-08-21 |
| JPH071793Y2 true JPH071793Y2 (ja) | 1995-01-18 |
Family
ID=31690090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989143313U Expired - Lifetime JPH071793Y2 (ja) | 1989-12-11 | 1989-12-11 | 半導体ウエハの面取り構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071793Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463111A (zh) * | 2020-05-06 | 2020-07-28 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种边缘便于识别的无损单晶片及其标记方法和专用砂轮 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61144831A (ja) * | 1984-12-18 | 1986-07-02 | Nec Kansai Ltd | 半導体装置の製造方法 |
-
1989
- 1989-12-11 JP JP1989143313U patent/JPH071793Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0381627U (enrdf_load_stackoverflow) | 1991-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5110764A (en) | Method of making a beveled semiconductor silicon wafer | |
| US5045505A (en) | Method of processing substrate for a beveled semiconductor device | |
| KR900006775B1 (ko) | 웨이퍼 및 그 가공방법 | |
| JPH081493A (ja) | ウェーハ面取部の鏡面研磨方法および鏡面研磨装置 | |
| JP2825048B2 (ja) | 半導体シリコン基板 | |
| JPH071793Y2 (ja) | 半導体ウエハの面取り構造 | |
| JPH01227441A (ja) | 半導体基板 | |
| JPH02155231A (ja) | ウェーハの製造方法 | |
| JPS61256621A (ja) | 接着型半導体基板の製造方法 | |
| JPS61152358A (ja) | 半導体ウエハの研削方法 | |
| JPS6058579B2 (ja) | 半導体ウエ−ハの製造方法 | |
| JPH06314676A (ja) | 半導体ウエハ | |
| JPS61114813A (ja) | 切断方法 | |
| JPH01293613A (ja) | ディスクリート素子用基板及びその製造方法 | |
| JP2000331898A (ja) | ノッチ付半導体ウエハ | |
| JPH0727747U (ja) | 半導体ウエハ等の研磨用キャリア | |
| JPH01271178A (ja) | 半導体ウエハ用ダイシングブレード | |
| JPH04113619A (ja) | ウェーハおよびその製造方法 | |
| JPH07193029A (ja) | ウエハーの製造方法 | |
| JPH0358806A (ja) | 半導体ウエハの切断方法 | |
| JPH0246716A (ja) | シリコン・ウェーハ | |
| JPS59129669A (ja) | 内周刃ダイヤモンド砥石の製造方法 | |
| JPH06823Y2 (ja) | 半導体ウエハの補強用当板 | |
| JP2001230166A (ja) | 半導体基板およびその製造方法 | |
| JP2630594B2 (ja) | 面取加工方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |