JPH0713215Y2 - 半導体のレジストアッシング装置 - Google Patents

半導体のレジストアッシング装置

Info

Publication number
JPH0713215Y2
JPH0713215Y2 JP1988004781U JP478188U JPH0713215Y2 JP H0713215 Y2 JPH0713215 Y2 JP H0713215Y2 JP 1988004781 U JP1988004781 U JP 1988004781U JP 478188 U JP478188 U JP 478188U JP H0713215 Y2 JPH0713215 Y2 JP H0713215Y2
Authority
JP
Japan
Prior art keywords
ashing
plasma
wafer
frequency power
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1988004781U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01110432U (enrdf_load_stackoverflow
Inventor
彰 福泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1988004781U priority Critical patent/JPH0713215Y2/ja
Publication of JPH01110432U publication Critical patent/JPH01110432U/ja
Application granted granted Critical
Publication of JPH0713215Y2 publication Critical patent/JPH0713215Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP1988004781U 1988-01-19 1988-01-19 半導体のレジストアッシング装置 Expired - Lifetime JPH0713215Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988004781U JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988004781U JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Publications (2)

Publication Number Publication Date
JPH01110432U JPH01110432U (enrdf_load_stackoverflow) 1989-07-26
JPH0713215Y2 true JPH0713215Y2 (ja) 1995-03-29

Family

ID=31207597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988004781U Expired - Lifetime JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Country Status (1)

Country Link
JP (1) JPH0713215Y2 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910084B2 (ja) * 2002-03-15 2007-04-25 松下電器産業株式会社 プラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0628254B2 (ja) * 1985-07-19 1994-04-13 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置
JPS6221225A (ja) * 1985-07-22 1987-01-29 Fujitsu Ltd レジストのアツシング方法
JPS62245634A (ja) * 1986-04-17 1987-10-26 Fujitsu Ltd ポジ型レジスト膜の除去方法とその装置

Also Published As

Publication number Publication date
JPH01110432U (enrdf_load_stackoverflow) 1989-07-26

Similar Documents

Publication Publication Date Title
TW204411B (enrdf_load_stackoverflow)
JP3234091B2 (ja) 表面処理装置
JP4811877B2 (ja) 基板処理方法、基板処理装置およびコンピュータ読み取り可能な記録媒体
CN101556430A (zh) 掩膜表面化学处理方法及系统
JPS63234528A (ja) レジスト処理方法
JPH0713215Y2 (ja) 半導体のレジストアッシング装置
JP2008103556A (ja) 基板処理方法および基板処理装置
TW558738B (en) Plasma processing
JP3404023B2 (ja) ウエハ熱処理装置及びウエハ熱処理方法
JP3653735B2 (ja) 表面処理方法及びその装置
US6781086B2 (en) Method for removing photoresist
JPH10135182A (ja) レジスト除去方法及びレジスト除去装置
JP2009117597A (ja) 基板処理装置および基板処理方法
JPH04307734A (ja) アッシング装置
JPS62245634A (ja) ポジ型レジスト膜の除去方法とその装置
JP3297416B2 (ja) レジスト灰化装置およびウエハー昇温方法
JP2579346Y2 (ja) レジスト膜のアッシング装置
JPH06104169A (ja) 半導体製造装置
JPH05347281A (ja) アッシング方法及びアッシング装置
JPH02183524A (ja) プラズマアッシング方法
JPS6370429A (ja) アツシング装置
JPH01248528A (ja) Ｓｏｇ膜の硬化方法
JP4772399B2 (ja) 基材外周の処理方法及び処理装置
JPS62101027A (ja) レジスト処理方法
JP3025454B2 (ja) レジストアッシング装置