JPH01110432U - - Google Patents
Info
- Publication number
- JPH01110432U JPH01110432U JP478188U JP478188U JPH01110432U JP H01110432 U JPH01110432 U JP H01110432U JP 478188 U JP478188 U JP 478188U JP 478188 U JP478188 U JP 478188U JP H01110432 U JPH01110432 U JP H01110432U
- Authority
- JP
- Japan
- Prior art keywords
- ozone
- chamber
- inlet
- ashing device
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000004380 ashing Methods 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000003566 sealing material Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988004781U JPH0713215Y2 (ja) | 1988-01-19 | 1988-01-19 | 半導体のレジストアッシング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988004781U JPH0713215Y2 (ja) | 1988-01-19 | 1988-01-19 | 半導体のレジストアッシング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01110432U true JPH01110432U (enrdf_load_stackoverflow) | 1989-07-26 |
JPH0713215Y2 JPH0713215Y2 (ja) | 1995-03-29 |
Family
ID=31207597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988004781U Expired - Lifetime JPH0713215Y2 (ja) | 1988-01-19 | 1988-01-19 | 半導体のレジストアッシング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0713215Y2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273083A (ja) * | 2002-03-15 | 2003-09-26 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6221225A (ja) * | 1985-07-22 | 1987-01-29 | Fujitsu Ltd | レジストのアツシング方法 |
JPS62245634A (ja) * | 1986-04-17 | 1987-10-26 | Fujitsu Ltd | ポジ型レジスト膜の除去方法とその装置 |
JPS62290134A (ja) * | 1985-07-19 | 1987-12-17 | フュージョン・システムズ・コーポレーション | フオトレジストの剥離装置 |
-
1988
- 1988-01-19 JP JP1988004781U patent/JPH0713215Y2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62290134A (ja) * | 1985-07-19 | 1987-12-17 | フュージョン・システムズ・コーポレーション | フオトレジストの剥離装置 |
JPS6221225A (ja) * | 1985-07-22 | 1987-01-29 | Fujitsu Ltd | レジストのアツシング方法 |
JPS62245634A (ja) * | 1986-04-17 | 1987-10-26 | Fujitsu Ltd | ポジ型レジスト膜の除去方法とその装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273083A (ja) * | 2002-03-15 | 2003-09-26 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0713215Y2 (ja) | 1995-03-29 |