JPH01110432U - - Google Patents

Info

Publication number
JPH01110432U
JPH01110432U JP478188U JP478188U JPH01110432U JP H01110432 U JPH01110432 U JP H01110432U JP 478188 U JP478188 U JP 478188U JP 478188 U JP478188 U JP 478188U JP H01110432 U JPH01110432 U JP H01110432U
Authority
JP
Japan
Prior art keywords
ozone
chamber
inlet
ashing device
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP478188U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0713215Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988004781U priority Critical patent/JPH0713215Y2/ja
Publication of JPH01110432U publication Critical patent/JPH01110432U/ja
Application granted granted Critical
Publication of JPH0713215Y2 publication Critical patent/JPH0713215Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP1988004781U 1988-01-19 1988-01-19 半導体のレジストアッシング装置 Expired - Lifetime JPH0713215Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988004781U JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988004781U JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Publications (2)

Publication Number Publication Date
JPH01110432U true JPH01110432U (enrdf_load_stackoverflow) 1989-07-26
JPH0713215Y2 JPH0713215Y2 (ja) 1995-03-29

Family

ID=31207597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988004781U Expired - Lifetime JPH0713215Y2 (ja) 1988-01-19 1988-01-19 半導体のレジストアッシング装置

Country Status (1)

Country Link
JP (1) JPH0713215Y2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273083A (ja) * 2002-03-15 2003-09-26 Matsushita Electric Ind Co Ltd プラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221225A (ja) * 1985-07-22 1987-01-29 Fujitsu Ltd レジストのアツシング方法
JPS62245634A (ja) * 1986-04-17 1987-10-26 Fujitsu Ltd ポジ型レジスト膜の除去方法とその装置
JPS62290134A (ja) * 1985-07-19 1987-12-17 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62290134A (ja) * 1985-07-19 1987-12-17 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置
JPS6221225A (ja) * 1985-07-22 1987-01-29 Fujitsu Ltd レジストのアツシング方法
JPS62245634A (ja) * 1986-04-17 1987-10-26 Fujitsu Ltd ポジ型レジスト膜の除去方法とその装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273083A (ja) * 2002-03-15 2003-09-26 Matsushita Electric Ind Co Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JPH0713215Y2 (ja) 1995-03-29

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