JPH0669408A - Semiconductor device for high-frequency power amplification - Google Patents

Abstract

PURPOSE:To facilitate circuit pattern design on a circuit board by disposing at multidirectional positions lead terminals which have been drawn in one direction. CONSTITUTION:A circuit board 3 is mounted on a beat dissipation plate 4 4. Mounted on the circuit board 3 are the inner portions of lead terminals 2, a semiconductor chip 5 for amplification, a circuit element 6, connecting tabs 7 and the like, which are electrically connected to the circuit board 3. The circuit board 3 is sealed by the board 4 and a sealing cap 9. In addition, the semiconductor chip 5 is electrically connected to the connecting tabs 7 through bonding wires 8. Furthermore, lead terminals 2 of different functions are disposed at multidirectional portions. Since this construction can facilitate the design of a circuit pattern 10 of a semiconductor device for high-frequency power amplification 1 and obviate cross wirings such as bias lines, the circuit pattern 10 can be simplified.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device for high frequency power amplification (a hybrid integrated circuit device for amplification), and more particularly to a semiconductor device for high frequency power amplification which can be miniaturized and increased in density.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device for high frequency power amplification (hybrid integrated circuit device for amplification) 101 needs to be attached to a heat sink as shown in FIG. Lead terminals 102 are provided. The lead terminal 102 (Pin) is an input pin, and the lead terminal 102 (Vap)
c) is a control pin, lead terminal 102 (Vdd) is a power supply pin, and lead terminal 102 (Pout) is an output pin.
The semiconductor device 101 for high frequency power amplification is shown in FIG.
As shown in (schematic diagram showing circuit configuration), the lead terminal 1
Since 02 is drawn from one direction, the circuit pattern 103 on the wiring substrate has a cross wiring (cross wiring) 104. In FIG. 6, reference numeral 105 is an amplifying semiconductor element.

[0003]

SUMMARY OF THE INVENTION The present inventor has made the above-mentioned semiconductor device for high frequency power amplification (amplification hybrid integrated circuit device) 1
As a result of examining No. 01, the following problems were found.

(1) There has been a problem that stray capacitance is generated by the cross wiring 104, causing oscillation and signal distortion.

(2) It is necessary to have multiple stages for power-up, but in that case, if the stray capacitance is taken into consideration, it is not possible to have multiple stages. Therefore, there is a problem that the layout area of the semiconductor element, the lead terminal, the resistor, etc. is limited, and the size cannot be reduced.

An object of the present invention is to provide a technique capable of simplifying a circuit pattern on a wiring board of a semiconductor device for high frequency power amplification.

Another object of the present invention is to provide a technique capable of reducing the size of a semiconductor device for high frequency power amplification.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0009]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, it is a semiconductor device for high frequency power amplification in which lead terminals having different functions are arranged at positions in multiple directions.

[0011]

According to the above-mentioned means, by arranging the lead terminals drawn from one direction at the positions in multiple directions,
Since the circuit pattern on the circuit board (artwork) can be easily designed and cross wiring (cross wiring) such as bias lines can be eliminated, the circuit pattern on the wiring board can be simplified and used for high frequency power amplification. It is possible to reduce the size of the semiconductor device.

[0012]

Embodiments of the present invention will now be described in detail with reference to the drawings.

FIG. 1 is a perspective view showing the external configuration of a semiconductor device for high frequency power amplification which is an embodiment of the present invention, and FIG.
FIG. 3 is a cross-sectional view taken along the line AA shown in FIG. 1, and FIG. 3 is a schematic view showing a circuit configuration of the semiconductor device for high frequency power amplification.

In FIGS. 1 and 2, 1 is a semiconductor device for high frequency power amplification, 2 is a lead terminal, 3 is a circuit board, 4 is a heat sink, 5 is an amplification semiconductor element, 6 is a capacitor, a resistor, a coil or the like. A circuit element, 7 is a connection tab in which a plurality of electrode pads are arranged, 8 is a bonding wire, and 9 is a sealing cap. The lead terminal 2 (Pin) is an input pin, the lead terminal 2 (Vapc) is a control pin, the lead terminal 2 (Vdd) is a power supply pin, and the lead terminal 2 (Pout) is an output pin.

As shown in FIGS. 1 and 2, in the semiconductor device 1 for high frequency power amplification of this embodiment, a circuit board 3 is mounted on a heat dissipation plate 4. The lead terminals 2 are provided on the circuit board 3.
The inner part, the amplification semiconductor element 5, the circuit element 6, the connection tab 7 and the like are mounted on the tower, and these are electrically connected to the circuit board 3. The circuit board 3 is sealed with the heat dissipation plate 4 and the sealing cap 9. The amplification semiconductor element 5 is electrically connected to the connection tab 7 via the bonding wire 8.

In the semiconductor device 1 for amplifying high frequency power, the lead terminals 2 having different functions are arranged in multiple directions.

With this structure, as shown in FIG. 3, the circuit pattern 10 of the semiconductor device 1 for high frequency power amplification can be easily designed, and cross wiring such as bias lines can be eliminated. Circuit pattern 10
Can be simplified, and the semiconductor device 1 for high frequency power amplification can be downsized.

FIG. 4 is a diagram for explaining a schematic configuration of an ADC system which is an application example of the present invention. FIG. 4A is a schematic diagram showing a circuit configuration of a semiconductor device for multistage high frequency power amplification, and FIG. ) Is a schematic diagram showing a schematic configuration of an ADC system.

In FIG. 4, 11 is a multistage circuit pattern, 11A is a multistage high frequency power amplification semiconductor device for analog, 11B is a multistage high frequency power amplification semiconductor device for digital, 12 is a lead terminal, and 13 is The amplifying semiconductor element 14 is a mother board. The lead terminal 12
(Pin) is an input pin, the lead terminal 12 (Vapc) is a control pin, the lead terminal 12 (Vdd) is a power supply pin, and the lead terminal 12 (Pout) is an output pin.

For example, when an analog high frequency power amplifying semiconductor device 11A and a digital high frequency power amplifying semiconductor device 11B are required as in an ADC system,
As shown in FIG. 4, the semiconductor device 11A for high frequency power amplification
Lead terminal 12 and semiconductor device 11A for high frequency power amplification
It is possible to improve the mounting efficiency of the motherboard 13 by reversing the lead arrangement with respect to the lead terminal 12 and mounting it on the motherboard 13.

As described above, the inventions made by the present inventor are
Although the present invention has been specifically described based on the above-mentioned embodiments, the present invention is not limited to the above-mentioned embodiments, and it goes without saying that various modifications can be made without departing from the scope of the invention.

[0022]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

By arranging the lead terminals drawn out from one direction at positions in many directions, the circuit pattern of the semiconductor device for high frequency power amplification can be easily designed and the cross wiring such as the bias line can be eliminated. The circuit pattern on the substrate can be simplified and the semiconductor device for high frequency power amplification can be downsized.

[Brief description of drawings]

FIG. 1 is a perspective view showing an external configuration of a semiconductor device for high frequency power amplification which is an embodiment of the present invention,

FIG. 2 is a sectional view taken along the line AA shown in FIG.

FIG. 3 is a schematic diagram showing a circuit configuration of the semiconductor device for high frequency power amplification,

FIG. 4 is a diagram for explaining a schematic configuration of an ADC system that is an application example of the present invention;

FIG. 5 is a perspective view showing an external configuration of a conventional semiconductor device for high frequency power amplification,

FIG. 6 is a schematic diagram showing a circuit configuration of a conventional semiconductor device for high frequency power amplification.

[Explanation of symbols]

1 ... Semiconductor device for high frequency power amplification, 2 ... Lead terminal, 3
... Circuit board, 4 ... Heat sink, 5 ... Amplifying semiconductor element, 6 ...
Circuit element, 7 ... Connection tab, 8 ... Bonding wire,
9 ... Sealing cap, 10 circuit pattern, multistage circuit pattern, 11A ... Analog multistage high frequency power amplification semiconductor device, 11B ... Digital multistage high frequency power amplification semiconductor device, 12 ... Lead terminal, 13 ... semiconductor element for amplification, 14 ... motherboard.

Claims (1)

[Claims] 1. A semiconductor device for high frequency power amplification, comprising:
A semiconductor device for high frequency power amplification, characterized in that lead terminals having different functions are arranged at positions in multiple directions.