JPH0537208A - Microwave package - Google Patents
Microwave packageInfo
- Publication number
- JPH0537208A JPH0537208A JP3215892A JP21589291A JPH0537208A JP H0537208 A JPH0537208 A JP H0537208A JP 3215892 A JP3215892 A JP 3215892A JP 21589291 A JP21589291 A JP 21589291A JP H0537208 A JPH0537208 A JP H0537208A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- microwave
- power device
- base metal
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Landscapes
- Waveguide Connection Structure (AREA)
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はレーダ等のマイクロ波
モジュールに用いるマイクロ波パッケージに関し、特に
小型，軽量のモジュールを構成できるマイクロ波パッケ
ージに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave package used for a microwave module such as a radar, and more particularly to a microwave package capable of forming a small and lightweight module.
【０００２】[0002]
【従来の技術】図５は、例えば「ASPECTS OF MODERN RA
DAR 」 （Eli Brookner著, Artech House社出版 １９８
８年刊行）に示された従来のマイクロ波パッケージの構
造を示す図であり、図において、１はベースメタル、２
はセラミック基板、３ａ，３ｂはＲＦ信号端子、４は電
源・制御信号端子、６は低電力デバイス、７は高電力デ
バイス、８はメタルフレーム、１１は接続基板である。2. Description of the Related Art FIG. 5 shows, for example, "ASPECTS OF MODERN RA
DAR "(Eli Brookner, Artech House Publishing 198
It is a figure which shows the structure of the conventional microwave package shown by 8 years publication, 1 is a base metal, 2 is a figure.
Is a ceramic substrate, 3a and 3b are RF signal terminals, 4 is a power supply / control signal terminal, 6 is a low power device, 7 is a high power device, 8 is a metal frame, and 11 is a connection substrate.
【０００３】従来のマイクロ波パッケージは、ベースメ
タル１の上にセラミック基板２及びメタルフレーム８が
ロー付け等で接合されており、セラミック基板２上の外
周部にＲＦ信号端子３及び電源・制御信号端子４が設け
られている。またマイクロ波パッケージの内部には、マ
イクロ波信号の低雑音増幅及び位相制御信号の切換え等
を行う低電力デバイス６及び大電力増幅等を行う高電力
デバイス７及びこれらの回路を接続する接続基板１１が
配置されており、これらはＲＦ信号端子３ａ，３ｂや電
源・制御信号端子４等にワイヤボンディング等で接続さ
れている。In a conventional microwave package, a ceramic substrate 2 and a metal frame 8 are bonded onto a base metal 1 by brazing or the like, and an RF signal terminal 3 and a power / control signal are provided on an outer peripheral portion of the ceramic substrate 2. A terminal 4 is provided. Further, inside the microwave package, a low power device 6 for low noise amplification of microwave signals and switching of phase control signals, a high power device 7 for high power amplification, etc., and a connection board 11 for connecting these circuits. Are arranged, and these are connected to the RF signal terminals 3a and 3b, the power supply / control signal terminal 4 and the like by wire bonding or the like.
【０００４】次に動作について説明する。ＲＦ信号端子
３ａより入力されたマイクロ波信号は、低電力デバイス
６により低雑音増幅，位相制御信号の切換え等が行われ
た後、接続基板１１を介して高電力デバイス７により大
電力増幅が行われ、ＲＦ信号端子３ｂより出力される。Next, the operation will be described. The microwave signal input from the RF signal terminal 3a is amplified by the high power device 7 via the connection board 11 after low noise amplification and switching of the phase control signal by the low power device 6. Output from the RF signal terminal 3b.
【０００５】また、電源・制御信号端子４には低電力デ
バイス６及び高電力デバイス７を駆動するための電源及
び制御信号が印加されており、これらは直接及び接続基
板１１を介して低電力デバイス６及び高電力デバイス７
に供給される。A power supply and control signal for driving the low power device 6 and the high power device 7 are applied to the power supply / control signal terminal 4, and these are directly and via the connection substrate 11 the low power device. 6 and high power device 7
Is supplied to.
【０００６】[0006]
【発明が解決しようとする課題】従来のマイクロ波パッ
ケージは以上のように構成されているので、パッケージ
内部のデバイス実装面積がパッケージの外形に比較して
小さくなるとともに、内部の電源・制御信号がＲＦ信号
と交差するという問題点があった。Since the conventional microwave package is configured as described above, the device mounting area inside the package becomes smaller than the outer shape of the package, and the internal power supply / control signals are There was a problem of crossing the RF signal.
【０００７】また従来のマイクロ波パッケージを複数個
接続してモジュールを構成する場合は、別のケース等に
平面的に配置，接続する必要があり、形状，重量が大き
くなるとともに、外部に接続するためのＲＦ信号コネク
タ，電源制御信号コネクタが必要になるという問題点が
あった。Further, when a plurality of conventional microwave packages are connected to form a module, it is necessary to dispose and connect them in a plane in another case, etc., and the shape and weight are increased, and they are connected to the outside. Therefore, there is a problem that an RF signal connector and a power supply control signal connector are required.
【０００８】この発明は上記のような問題点を解消する
ためになされたもので、デバイスの有効実装面積を拡大
し、さらにマイクロ波パッケージ内部の配置を簡単に
し、高電力デバイスの放熱効果を高めるとともに、また
マイクロ波パッケージ自体を多層に積み重ねることよ
り、小型，軽量のモジュールを構成できるマイクロ波パ
ッケージを得ることを目的とする。The present invention has been made in order to solve the above problems, and expands the effective mounting area of the device, further simplifies the arrangement inside the microwave package, and enhances the heat dissipation effect of the high power device. At the same time, another object of the present invention is to obtain a microwave package capable of forming a small and lightweight module by stacking the microwave packages themselves in multiple layers.
【０００９】[0009]
【課題を解決するための手段】この発明に係るマイクロ
波パッケージは、ベースメタル上に設けられたセラミッ
ク基板を多層にし、その配線をセラミック基板内部で行
い、該多層セラミック基板上の周囲にメタルフレームを
設け、上記多層セラミック基板上に低電力デバイスを配
置し、メタルベースの一部を凸形状としたステージ部を
設け、その上に高電力デバイスを配置し、同軸スリーブ
とガラスハーメチックシールとからなる同軸構造のＲＦ
信号端子をセラミック基板を貫通してベースメタルの下
部に設けるとともに、ピン状の電源・制御信号端子を下
層のセラミック基板の下部に設け、上層セラミック基板
の上部にピン状の上下層接続端子を設けるようにしたも
のである。In a microwave package according to the present invention, a ceramic substrate provided on a base metal is multi-layered, the wiring is performed inside the ceramic substrate, and a metal frame is provided around the multilayer ceramic substrate. , A low power device is arranged on the above-mentioned multilayer ceramic substrate, a stage part having a convex part of a metal base is provided, and a high power device is arranged on the stage part, which is composed of a coaxial sleeve and a glass hermetic seal. RF with coaxial structure
Signal terminals are pierced through the ceramic board at the bottom of the base metal, pin-shaped power supply / control signal terminals are provided at the bottom of the lower ceramic board, and pin-shaped upper and lower layer connection terminals are provided at the top of the upper ceramic board. It was done like this.
【００１０】[0010]
【作用】この発明においては、多層に積層されたセラミ
ック基板はＲＦ信号，電源制御信号を交差することな
く、配線，接続し、従来の接続基板を不要にすることが
でき、ベースメタルの一部を凸形状としたステージ部は
高電力デバイスの発生する熱を効率よくベースメタルに
伝導し放熱することができるとともに、マイクロ波パッ
ケージの上部に配されたピン状の上下層接続端子を介し
て複数個のマイクロ波パッケージを積み重ねて接続する
ことにより、マイクロ波パッケージ自体でモジュールを
構成することができる。According to the present invention, the ceramic substrates laminated in multiple layers can be wired and connected without crossing the RF signal and the power supply control signal, thus eliminating the need for a conventional connection substrate. The stage part with a convex shape can efficiently conduct the heat generated by the high-power device to the base metal and dissipate it, and at the same time, through the pin-shaped upper and lower layer connection terminals arranged on the upper part of the microwave package, By stacking and connecting individual microwave packages, the microwave package itself can form a module.
【００１１】[0011]
【実施例】以下、この発明の一実施例を図について説明
する。図１は本発明の一実施例によるマイクロ波パッケ
ージの構成を示す図であり、図において、１はベースメ
タル、２は多層構造に成形されたセラミック基板、３
ａ，３ｂはピン状に形成されたＲＦ信号端子、４はピン
状に形成された電源・制御信号端子、５はピン状に形成
された上下層接続端子、６は低電力デバイス、７は高電
力デバイス、８はメタルフレーム、９はベースメタルの
一部を凸形状にしたステージ部、１０ａ，１０ｂはガラ
スハーメチックシール、１１ａ，１１ｂは同軸スリーブ
であり、１２は電源・制御信号パッドである。また図２
(a) 〜(c) は図１の断面図である。本発明によるマイク
ロ波パッケージはベースメタル１の一部を凸形状とした
ステージ部９を設け、これらの上に多層に内部配線を施
したセラミック基板２を接合してある。この際、上記ス
テージ部９の部分はセラミック基板２がくりぬかれてい
る。また同時に、ベースメタルの下部に同軸スリーブ１
１ａ，１１ｂを形成し、ガラスハーメチックシール１０
ａ，１０ｂを用いてピン状のＲＦ信号端子３ａ，３ｂを
封入し、同軸コネクタを形成している。ＲＦ信号端子３
ａ，３ｂはセラミック基板２を貫通し、マイクロ波パッ
ケージ内部に達している。また下層のセラミック基板２
の下部にはピン状の電源信号端子４が接合されており、
セラミック基板２の内部の配線を介してセラミック基板
２の上面の電源・制御信号パッド１２に接続されてい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a structure of a microwave package according to an embodiment of the present invention. In the figure, 1 is a base metal, 2 is a ceramic substrate molded in a multilayer structure, and 3 is a ceramic substrate.
a and 3b are pin-shaped RF signal terminals, 4 is a pin-shaped power supply / control signal terminal, 5 is a pin-shaped upper and lower layer connection terminal, 6 is a low-power device, and 7 is high. A power device, 8 is a metal frame, 9 is a stage part in which a part of the base metal is convex, 10a and 10b are glass hermetic seals, 11a and 11b are coaxial sleeves, and 12 is a power / control signal pad. See also FIG.
(a)-(c) is sectional drawing of FIG. In the microwave package according to the present invention, a stage portion 9 in which a part of the base metal 1 is formed in a convex shape is provided, and a ceramic substrate 2 having a multi-layered internal wiring is bonded thereon. At this time, the ceramic substrate 2 is hollowed out from the stage portion 9. At the same time, the coaxial sleeve 1 is attached to the bottom of the base metal.
1a and 11b are formed and a glass hermetic seal 10 is formed.
The pin-shaped RF signal terminals 3a and 3b are enclosed by using a and 10b to form a coaxial connector. RF signal terminal 3
A and 3b penetrate the ceramic substrate 2 and reach the inside of the microwave package. The lower ceramic substrate 2
The pin-shaped power signal terminal 4 is joined to the lower part of
It is connected to the power / control signal pad 12 on the upper surface of the ceramic substrate 2 via the wiring inside the ceramic substrate 2.
【００１２】また上層のセラミック基板２の上部には周
状のメタルフレーム８が接合されている。低電力デバイ
ス６はセラミック基板２の上に配置され、高電力デバイ
ス７はステージ部９の上に配置されている。これらのデ
バイス，ＲＦ信号端子３ａ，３ｂ及びセラミック基板２
に施された配線パターン等はワイヤボンディング等で接
続されている。上層のセラミック基板２の上部にはピン
状の上下層接続端子５が設けられており、セラミック基
板２の内部の配線を介して電源・制御信号端子４に接続
されている。A peripheral metal frame 8 is joined to the upper portion of the upper ceramic substrate 2. The low power device 6 is arranged on the ceramic substrate 2, and the high power device 7 is arranged on the stage portion 9. These devices, RF signal terminals 3a and 3b, and ceramic substrate 2
The wiring patterns and the like applied to the are connected by wire bonding or the like. Pin-shaped upper and lower layer connecting terminals 5 are provided on the upper portion of the upper ceramic substrate 2, and are connected to the power supply / control signal terminal 4 via wiring inside the ceramic substrate 2.
【００１３】次に動作について説明する。ＲＦ信号端子
３ａより入力されたマイクロ波信号は、ピン状のＲＦ信
号端子３ａ，同軸スリーブ１１ａ及びガラスハーメチッ
クシール１０ａにより構成される同軸線路を通り、マイ
クロ波パッケージ内部に伝送される。この信号は低電力
デバイス６により低雑音増幅，位相制御信号の切換えが
行われた後、セラミック基板２の表面に施された配線パ
ターンを通り、高電力デバイス７に伝送される。ここで
は大電力増幅が行われた後、前述と同様の同軸線路を通
り、ＲＦ信号端子３ｂより出力される。Next, the operation will be described. The microwave signal input from the RF signal terminal 3a is transmitted to the inside of the microwave package through the coaxial line formed by the pin-shaped RF signal terminal 3a, the coaxial sleeve 11a, and the glass hermetic seal 10a. This signal is transmitted to the high power device 7 through the wiring pattern formed on the surface of the ceramic substrate 2 after low noise amplification and switching of the phase control signal by the low power device 6. Here, after high power amplification is performed, it passes through the same coaxial line as described above and is output from the RF signal terminal 3b.
【００１４】電源・制御信号端子４より印加された電源
及び制御信号は多層に形成され、内部配線の施されたセ
ラミック基板２を介してマイクロ波パッケージの内部の
電源・制御信号パッド１２に接続されており、低電力デ
バイス６及び高電力デバイス７に供給される。さらに、
これらの電源・制御信号の一部はセラミック基板２の内
部配線を介して上下層接続端子５へも供給される。The power and control signals applied from the power / control signal terminal 4 are formed in multiple layers and are connected to the power / control signal pad 12 inside the microwave package through the ceramic substrate 2 having internal wiring. Are supplied to the low power device 6 and the high power device 7. further,
Some of these power supply / control signals are also supplied to the upper and lower layer connection terminals 5 via the internal wiring of the ceramic substrate 2.
【００１５】また図３は上記実施例によるマイクロ波パ
ッケージを複数個多層構造に積み重ねて接続し、モジュ
ールを構成したマイクロ波パッケージのモジュールの構
造図であり、図において、図５と同一符号は同一または
相当部分を示す。図４(a) 〜(c) は図３の断面図であ
る。FIG. 3 is a structural diagram of a microwave package module in which a plurality of microwave packages according to the above-described embodiments are stacked and connected in a multilayer structure to form a module. In the figure, the same symbols as those in FIG. 5 are the same. Or shows a considerable part. 4A to 4C are sectional views of FIG.
【００１６】次に作用について説明する。ＲＦ信号端子
３ａ，３ｂはＲＦ信号コネクタとして作用し、電源・制
御信号端子４は電源・制御信号コネクタとして作用す
る。またマイクロ波パッケージがモジュールのケースを
兼用することができる。Next, the operation will be described. The RF signal terminals 3a and 3b act as RF signal connectors, and the power / control signal terminal 4 acts as a power / control signal connector. Further, the microwave package can also serve as the module case.
【００１７】[0017]
【発明の効果】以上のように、この発明に係るマイクロ
波パッケージによれば、多層に形成した、内部に配線を
施したセラミック基板を用いるようにしたので、接続基
板を用いずにデバイスを実装配線することができ、デバ
イスの有効実装面積を大きくすることができ、小型，軽
量のマイクロ波パッケージを実現できるとともに、実装
面での配線の線路の交差をなくし、高周波特性を改善で
きる効果がある。As described above, according to the microwave package of the present invention, since the multilayer ceramic substrate having the wiring inside is used, the device is mounted without using the connection substrate. Wiring is possible, the effective mounting area of the device can be increased, a compact and lightweight microwave package can be realized, and the high-frequency characteristics can be improved by eliminating the crossing of wiring lines on the mounting surface. .
【００１８】またベースメタルの一部にステージ部を設
け、その部分のセラミック基板をくりぬき、高電力デバ
イスをステージ部に直接配置することにより、高電力デ
バイスの放熱効率を高めることができ、また同軸スリー
ブ及びガラスハーメチックシールからなる同軸構造のＲ
Ｆ信号端子をベースメタルの下部に設け、ピン状の電源
・制御信号端子を下層のセラミック基板の下部に設け、
さらにピン状の上下層接続端子を上層のセラミック基板
の上部に設けることにより、複数のマイクロ波パッケー
ジを多層に積み重ねて接続することを可能とし、上記そ
れぞれの端子をコネクタとして用いてマイクロ波パッケ
ージ自体でモジュールを構成することができる効果があ
る。Further, by providing a stage part on a part of the base metal, hollowing out the ceramic substrate of the part, and disposing the high power device directly on the stage part, the heat dissipation efficiency of the high power device can be improved, and the coaxial structure can be improved. R with coaxial structure consisting of sleeve and glass hermetic seal
The F signal terminal is provided under the base metal, and the pin-shaped power supply / control signal terminal is provided under the lower ceramic substrate.
Further, by providing pin-shaped upper and lower layer connection terminals on the upper layer of the ceramic substrate, it is possible to stack and connect a plurality of microwave packages in multiple layers. There is an effect that the module can be configured with.
【図１】この発明の一実施例によるマイクロ波パッケー
ジの構造を示す斜視図である。FIG. 1 is a perspective view showing a structure of a microwave package according to an embodiment of the present invention.
【図２】この発明の一実施例によるマイクロ波パッケー
ジの構造断面を示す構造断面図である。FIG. 2 is a structural sectional view showing a structural section of a microwave package according to an embodiment of the present invention.
【図３】この発明の他の実施例によるマイクロ波パッケ
ージの構造を示す斜視図である。FIG. 3 is a perspective view showing a structure of a microwave package according to another embodiment of the present invention.
【図４】この発明の他の実施例によるマイクロ波パッケ
ージの構造断面を示す構造断面図である。FIG. 4 is a structural sectional view showing a structural section of a microwave package according to another embodiment of the present invention.
【図５】従来のマイクロ波パッケージの構造断面を示す
構造断面図である。FIG. 5 is a structural sectional view showing a structural section of a conventional microwave package.
１ ベースメタル ２ セラミック基板 ３ａ，３ｂ ＲＦ信号端子 ４ 電源・制御信号端子 ５ 上下層接続端子 ６ 低電力デバイス ７ 高電力デバイス ８ メタルフレーム ９ ステージ部 １０ａ，１０ｂ ガラスハーメチックシール １１ａ，１１ｂ 同軸スリーブ １２ 電源・制御信号パッド 1 base metal 2 Ceramic substrate 3a, 3b RF signal terminal 4 Power supply / control signal terminal 5 Upper and lower layer connection terminals 6 Low power devices 7 High power devices 8 metal frame 9 Stage section 10a, 10b glass hermetic seal 11a, 11b Coaxial sleeve 12 Power / control signal pad
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｐ 1/00 Ｚ 4241−5Ｊ 3/08 4241−5Ｊ Ｈ０３Ｆ 3/60 8836−5Ｊ ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 5 Identification number Internal reference number for FI Technical indication H01P 1/00 Z 4241-5J 3/08 4241-5J H03F 3/60 8836-5J
Claims (2)
られるマイクロ波パッケージにおいて、 入力されたマイクロ波信号の低雑音増幅，位相制御の切
換え等を行う低電力デバイスと、 該低電力デバイスの出力を大電力増幅する高電力デバイ
スと、 該高電力デバイスを配置するための凸形状のステージ部
を有するベースメタルと、 該ベースメタル上に設けられ、上記低電力デバイス及び
上記ステージ部を貫通するための貫通穴を有する、内部
配線を施した多層セラミック基板と、 該多層セラミック基板上の周囲に設けられたメタルフレ
ームと、 該ベースメタルの下部に設けられた、マイクロ波信号を
入出力する同軸構造のＲＦ信号端子と上記多層セラミッ
ク基板の上部及び下部に設けた、マイクロ波モジュール
を構成するマイクロ波パッケージの上下層を接続する上
下層接続端子及び上記低電力デバイス及び高電力デバイ
スを駆動する電源・制御信号端子とを備えたことを特徴
とするマイクロ波パッケージ。1. In a microwave package used for a microwave module such as a radar, a low power device for low noise amplification of an input microwave signal, switching of phase control, etc., and an output of the low power device are large. A high-power device for power amplification, a base metal having a convex stage part for disposing the high-power device, and a penetrating hole provided on the base metal for penetrating the low-power device and the stage part. A multilayer ceramic substrate having a hole and having internal wiring, a metal frame provided on the periphery of the multilayer ceramic substrate, and a coaxial RF structure provided below the base metal for inputting and outputting microwave signals. A microwave package that forms a microwave module and is provided on the signal terminal and the upper and lower parts of the multilayer ceramic substrate. A microwave package comprising upper and lower layer connection terminals for connecting upper and lower layers of the package and power and control signal terminals for driving the low power device and the high power device.
に積み重ね接続することにより、マイクロ波パッケージ
自体でマイクロ波モジュールを構成することを特徴とす
る請求項１記載のマイクロ波パッケージ。2. The microwave package according to claim 1, wherein the microwave package itself constitutes a microwave module by stacking and connecting a plurality of the microwave packages in multiple layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3215892A JP2716605B2 (en) | 1991-07-31 | 1991-07-31 | Microwave module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3215892A JP2716605B2 (en) | 1991-07-31 | 1991-07-31 | Microwave module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0537208A true JPH0537208A (en) | 1993-02-12 |
| JP2716605B2 JP2716605B2 (en) | 1998-02-18 |
Family
ID=16679991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3215892A Expired - Fee Related JP2716605B2 (en) | 1991-07-31 | 1991-07-31 | Microwave module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2716605B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007125633A1 (en) * | 2006-04-28 | 2007-11-08 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device |
| JP2008277838A (en) * | 2008-05-21 | 2008-11-13 | Mitsubishi Electric Corp | High-frequency module |
| WO2023037799A1 (en) * | 2021-09-08 | 2023-03-16 | 株式会社村田製作所 | High-frequency module |
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|---|---|---|---|---|
| JPS5443971U (en) * | 1977-08-31 | 1979-03-26 | ||
| JPS60153195A (en) * | 1984-01-20 | 1985-08-12 | マスプロ電工株式会社 | Electronic device |
| JPS62179135A (en) * | 1986-01-31 | 1987-08-06 | Mitsubishi Electric Corp | Microwave device module |
| JPS6316497U (en) * | 1986-07-17 | 1988-02-03 | ||
| JPS6450551A (en) * | 1987-08-21 | 1989-02-27 | Nec Corp | Ic package structure |
| JPH02215209A (en) * | 1989-02-16 | 1990-08-28 | Matsushita Electric Ind Co Ltd | Microwave low noise converter |
| JPH0394452A (en) * | 1989-09-06 | 1991-04-19 | Nec Corp | Package for semiconductor integrated circuit |
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1991
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443971U (en) * | 1977-08-31 | 1979-03-26 | ||
| JPS60153195A (en) * | 1984-01-20 | 1985-08-12 | マスプロ電工株式会社 | Electronic device |
| JPS62179135A (en) * | 1986-01-31 | 1987-08-06 | Mitsubishi Electric Corp | Microwave device module |
| JPS6316497U (en) * | 1986-07-17 | 1988-02-03 | ||
| JPS6450551A (en) * | 1987-08-21 | 1989-02-27 | Nec Corp | Ic package structure |
| JPH02215209A (en) * | 1989-02-16 | 1990-08-28 | Matsushita Electric Ind Co Ltd | Microwave low noise converter |
| JPH0394452A (en) * | 1989-09-06 | 1991-04-19 | Nec Corp | Package for semiconductor integrated circuit |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007125633A1 (en) * | 2006-04-28 | 2007-11-08 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device |
| JPWO2007125633A1 (en) * | 2006-04-28 | 2009-09-10 | 株式会社東芝 | High frequency semiconductor devices |
| US7667322B2 (en) | 2006-04-28 | 2010-02-23 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device |
| US7994637B2 (en) | 2006-04-28 | 2011-08-09 | Kabushiki Kaisha Toshiba | High-frequency semiconductor device |
| JP2008277838A (en) * | 2008-05-21 | 2008-11-13 | Mitsubishi Electric Corp | High-frequency module |
| WO2023037799A1 (en) * | 2021-09-08 | 2023-03-16 | 株式会社村田製作所 | High-frequency module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2716605B2 (en) | 1998-02-18 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |