JPH065689B2 - Ultrasonic bonding tool - Google Patents

Ultrasonic bonding tool

Info

Publication number
JPH065689B2
JPH065689B2 JP62310507A JP31050787A JPH065689B2 JP H065689 B2 JPH065689 B2 JP H065689B2 JP 62310507 A JP62310507 A JP 62310507A JP 31050787 A JP31050787 A JP 31050787A JP H065689 B2 JPH065689 B2 JP H065689B2
Authority
JP
Japan
Prior art keywords
wire
tool
bonding
guide hole
ultrasonic bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62310507A
Other languages
Japanese (ja)
Other versions
JPH01151241A (en
Inventor
武夫 菊池
満 金井
恵真 島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62310507A priority Critical patent/JPH065689B2/en
Publication of JPH01151241A publication Critical patent/JPH01151241A/en
Publication of JPH065689B2 publication Critical patent/JPH065689B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば半導体素子の製造工程において半導体
チップ上の通常Alの電極とパッケージ端子の間をAl線を
用いて超音波圧着するのに用いる超音波ボンディングツ
ールに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is applicable to ultrasonic pressure bonding using an Al wire between a normal Al electrode on a semiconductor chip and a package terminal in a semiconductor element manufacturing process, for example. The present invention relates to an ultrasonic bonding tool used.

〔従来の技術〕[Conventional technology]

ＩＣなどの半導体素子の実装には、例えばＩＣチップを
絶縁基板上に固着したのち、チップ上の通常はAl蒸着膜
で形成される電極と端部にパッケージ端子を備えた導体
を導線によって接続する。この接続にはAu線を主体とし
た熱圧着法と、Al線を主体とした超音波ボンディング法
がある。後者は適当な圧力と超音波振動を加えることに
より、Al線とAl膜の間にある不純物や酸化膜を除去し、
清浄面を接合させボンディングする方法であり、常温で
はボンディング可能であり、Al同志間の接合のため前者
より信頼性が高く、多く適用されている。このボンディ
ングには第２図に示すようなボンディングツールが用い
られ、ツール１の先端付近に斜めに明けられたガイド穴
２を通してツール１の先端のワイヤの入る溝を有する圧
着部３にボンディングワイヤ４を導き、ツール１に超音
波振動を与えながら圧着部３を被接合面に向けて加圧す
る。For mounting a semiconductor element such as an IC, for example, an IC chip is fixed on an insulating substrate, and then an electrode usually formed of an Al vapor deposition film on the chip and a conductor having a package terminal at an end are connected by a conductor wire. . For this connection, there are a thermocompression bonding method mainly composed of Au wire and an ultrasonic bonding method mainly composed of Al wire. The latter removes impurities and oxide film between Al wire and Al film by applying appropriate pressure and ultrasonic vibration,
This is a method of bonding by joining clean surfaces, which can be bonded at room temperature, and is more reliable than the former due to the bonding between aluminum alloys and is widely used. A bonding tool as shown in FIG. 2 is used for this bonding, and a bonding wire 4 is attached to a crimping portion 3 having a groove for receiving a wire at the tip of the tool 1 through a guide hole 2 formed obliquely near the tip of the tool 1. And applying a ultrasonic vibration to the tool 1, the crimp portion 3 is pressed toward the surface to be joined.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

ツール１の材料には、圧着部３の圧着時に受ける応力に
より変形してワイヤが入らなくなったりすることのない
ようにタングステンのような硬い材料が用いられる。し
かし軟らかいAl線４をガイド穴２を通しながらボンディ
ングループを形成するときに、ツールによってAl線が削
られ、削りくずが発生する欠点があつた。As the material of the tool 1, a hard material such as tungsten is used so that the wire does not get deformed due to the stress received at the time of crimping the crimp portion 3. However, when forming a bonding loop while passing the soft Al wire 4 through the guide hole 2, there is a drawback that the tool scrapes the Al wire and produces shavings.

本発明の目的は、ガイド穴部でボンディングワイヤが削
られることのない超音波ボンディングツールを提供する
ことにある。An object of the present invention is to provide an ultrasonic bonding tool in which the bonding wire is not scraped by the guide hole.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成するために、ボンディングワイヤを通
すガイド穴が形成される部分が他の部分より軟らかい材
料からなるものである。In order to achieve the above object, a portion where a guide hole for passing a bonding wire is formed is made of a material softer than other portions.

〔作用〕[Action]

ガイド穴が軟質材料の部分にあるので、軟らかいボンデ
ィングワイヤが通されるときに削られることがない。Since the guide hole is in the soft material portion, it is not scraped when the soft bonding wire is threaded.

〔実施例〕〔Example〕

第１図は本発明の一実施例を示し、第２図と共通の部分
には同一の符号が付されている。ツール１のガイド穴２
が設けられる部分は、ポリアセタール樹脂あるいはふっ
素樹脂からなる取付け部11からなっていて、ツール１の
本体にはめ込まれている。第３図は別の実施例を示し、
ガイド穴２を有する取付け部12は平面部で接着剤５でツ
ール１本体と接着されている。これらの実施例におい
て、取付け部11,12の樹脂がワイヤ４の通過により摩耗
した場合は取付け部を取替える。その場合には、はめ込
みによる取付け部11の方が取替え容易である。しかし、
ガイド穴２を有する取付け部は軟質樹脂に限らず、ボン
ディングワイヤと同程度かあるいは多少硬い程度の材
料、もしくは樹脂以外の材料、例えば金属から形成して
もよい。FIG. 1 shows an embodiment of the present invention, and the same parts as those in FIG. 2 are designated by the same reference numerals. Tool 1 guide hole 2
The portion provided with is made up of a mounting portion 11 made of polyacetal resin or fluorine resin, and is fitted into the main body of the tool 1. FIG. 3 shows another embodiment,
The mounting portion 12 having the guide hole 2 is a flat surface portion and is bonded to the main body of the tool 1 with an adhesive 5. In these examples, when the resin of the mounting portions 11 and 12 is worn by the passage of the wire 4, the mounting portions are replaced. In that case, the mounting portion 11 by fitting is easier to replace. But,
The mounting portion having the guide hole 2 is not limited to the soft resin, and may be made of a material having the same or a little hardness as the bonding wire, or a material other than the resin, for example, a metal.

〔発明の効果〕〔The invention's effect〕

本発明によれば、超音波ボンディングツールのワイヤガ
イド穴の形成される部分にツール本体より軟らかい材料
を用いることにより、Al線のような軟らかいボンディン
グワイヤを用いてもガイド穴通過時に削られることがな
く、削り屑が発生しない。その結果、ワイヤの削り屑の
素子への付着による短絡の発生などのおそれがなくな
る。According to the present invention, by using a material softer than the tool body in the portion where the wire guide hole of the ultrasonic bonding tool is formed, even if a soft bonding wire such as an Al wire is used, it can be scraped when passing through the guide hole. No shavings are generated. As a result, there is no fear of short-circuiting due to the attachment of wire shavings to the element.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明の一実施例の超音波ボンディングツール
の側面図、第２図は従来の超音波ボンディングツールの
側面図、第３図は本発明の異なる実施例の側面図であ
る。 １：ツール、２：ガイド穴、２：圧着部、４：ボンディ
ングワイヤ、11,12：取付け部。FIG. 1 is a side view of an ultrasonic bonding tool according to an embodiment of the present invention, FIG. 2 is a side view of a conventional ultrasonic bonding tool, and FIG. 3 is a side view of a different embodiment of the present invention. 1: Tool, 2: Guide hole, 2: Crimping part, 4: Bonding wire, 11, 12: Mounting part.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】ボンディングワイヤを通すガイド穴が形成
される部分が他の部分より軟らかい材料からなることを
特徴とする超音波ボンディングツール。1. An ultrasonic bonding tool, wherein a portion where a guide hole for passing a bonding wire is formed is made of a material softer than other portions.
JP62310507A 1987-12-08 1987-12-08 Ultrasonic bonding tool Expired - Lifetime JPH065689B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62310507A JPH065689B2 (en) 1987-12-08 1987-12-08 Ultrasonic bonding tool

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62310507A JPH065689B2 (en) 1987-12-08 1987-12-08 Ultrasonic bonding tool

Publications (2)

Publication Number Publication Date
JPH01151241A JPH01151241A (en) 1989-06-14
JPH065689B2 true JPH065689B2 (en) 1994-01-19

Family

ID=18006057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62310507A Expired - Lifetime JPH065689B2 (en) 1987-12-08 1987-12-08 Ultrasonic bonding tool

Country Status (1)

Country Link
JP (1) JPH065689B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230834B2 (en) 2007-06-29 2016-01-05 Screen Semiconductor Solutions Co., Ltd. Substrate treating apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230834B2 (en) 2007-06-29 2016-01-05 Screen Semiconductor Solutions Co., Ltd. Substrate treating apparatus

Also Published As

Publication number Publication date
JPH01151241A (en) 1989-06-14

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