JPH0661313A - Bonding device - Google Patents
Bonding deviceInfo
- Publication number
- JPH0661313A JPH0661313A JP4210054A JP21005492A JPH0661313A JP H0661313 A JPH0661313 A JP H0661313A JP 4210054 A JP4210054 A JP 4210054A JP 21005492 A JP21005492 A JP 21005492A JP H0661313 A JPH0661313 A JP H0661313A
- Authority
- JP
- Japan
- Prior art keywords
- tool
- wire
- groove
- bonding
- damage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置に関するもの
であり、特に電力用半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a power semiconductor device.
【０００２】[0002]
【従来の技術】多くの電力用半導体装置において、半導
体素子と電極板との接続には比較的直径の大きいアルミ
ニウムワイヤを用いたウエッジボンディングで行われて
いる。ウエッジボンディングは、半導体素子上のパッド
及び電極板にツールを介してワイヤを押しつけると同時
に超音波を印加し、ワイヤを変形させながら接合するも
ので主としてアルミニウムワイヤを接合する場合に用い
られている。この方法はワイヤと相手面とが擦れ合うと
きに互いの酸化膜が除去され、新生面が露出することに
よって接合するメカニズムである。したがって、接合性
には荷重ならびに超音波出力が大きく影響する。電力用
半導体装置において、一つのモジュールには数個の半導
体素子が搭載されているため、それだけ接続するワイヤ
の数が多くボンディングには高い信頼性が要求される。2. Description of the Related Art In many power semiconductor devices, a semiconductor element and an electrode plate are connected by wedge bonding using an aluminum wire having a relatively large diameter. The wedge bonding is a method of pressing a wire against a pad and an electrode plate on a semiconductor element via a tool and applying ultrasonic waves at the same time to bond the wire while deforming the wire, and is mainly used for bonding an aluminum wire. This method is a mechanism in which when the wire and the mating surface are rubbed with each other, their oxide films are removed and the new surface is exposed to bond them. Therefore, the load and the ultrasonic output greatly affect the bondability. In a power semiconductor device, since several semiconductor elements are mounted in one module, the number of wires to be connected correspondingly is large, and high reliability is required for bonding.
【０００３】公知例としては、昭57−15453号，昭62−6
1349号，昭62−104165号を挙げることができる。Known examples are Sho 57-15453 and Sho 62-6.
1349 and 62-104165 can be mentioned.
【０００４】[0004]
【発明が解決しようとする課題】近年、素子の大容量化
が進み、配線に大電流が流れるため使用されるワイヤは
さらに直径の大きいものになっている。このようなワイ
ヤを半導体素子上に強固に接合するにはより大きな荷重
と超音波出力が必要とされる。しかし、この方法では半
導体素子に損傷を与え、半導体装置が機能しなくなると
いう問題がある。接合後のワイヤの形状と損傷の発生箇
所との関係を詳細に調べた結果、損傷はワイヤの周辺の
真下に多く発生することを見いだした。図５はツールな
らびに接合後のワイヤの形状及び損傷の発生箇所を示し
たものである。損傷はワイヤが最も変形する部分の真下
に発生しやすいことがわかる。変形には荷重及び超音波
出力が大きく影響するが、ツールの形状も影響するもの
と考えられる。図２に示したようにワイヤが変形する際
に最もその変形に寄与する部分がツールの周辺である。
すなわち、周辺部に当たるワイヤの部分には極めて高い
応力集中が起こり、そのためその真下にある素子に高い
応力を与えることになり損傷が発生するものと考えた。
従来、素子の損傷は荷重及び超音波出力の大きさが原因
と考え、ツールの形状には注意が払われなかった。In recent years, the capacity of devices has been increasing, and a large current flows through the wires, so that the wires used have a larger diameter. A larger load and ultrasonic output are required to firmly bond such a wire onto the semiconductor element. However, this method has a problem that the semiconductor element is damaged and the semiconductor device does not function. As a result of detailed examination of the relationship between the shape of the wire after joining and the location of the damage, it was found that the damage often occurs just below the periphery of the wire. FIG. 5 shows the tool, the shape of the wire after joining, and the location of damage. It can be seen that the damage is likely to occur right below the part where the wire is most deformed. The load and ultrasonic output greatly affect the deformation, but it is considered that the shape of the tool also affects. As shown in FIG. 2, when the wire is deformed, the portion most contributing to the deformation is the periphery of the tool.
That is, it was considered that extremely high stress concentration occurs in the wire portion that hits the peripheral portion, and therefore high stress is applied to the element directly below it, resulting in damage.
Conventionally, damage to the element was considered to be caused by the magnitude of the load and ultrasonic output, and no attention was paid to the shape of the tool.
【０００５】この発明は、上記問題点を解消しようとす
るもので、素子に損傷を与えないツール及びそのツール
を用いて半導体素子と電極板とを接続した、素子に損傷
の無い信頼性の高い半導体装置を得ることを目的とす
る。The present invention is intended to solve the above problems, and a tool which does not damage an element and a semiconductor element and an electrode plate which are connected by using the tool are highly reliable with no damage to the element. The purpose is to obtain a semiconductor device.
【０００６】[0006]
【課題を解決するための手段】この発明はワイヤにかか
る応力を集中させないためのツール形状にある。ツール
形状において、ワイヤの応力集中に寄与するのは前述の
周辺部である。すなわち、図６に示すようにツール底面
とツールの溝とが接する端部（仮にＡ端部と略す）ツー
ルの前面及び後面とツールの溝とが接する端部（仮にＢ
端部と略す）ならびに溝の頂部のＲ（アール）である。SUMMARY OF THE INVENTION The present invention resides in a tool geometry for avoiding concentration of stress on the wire. In the tool shape, it is the aforementioned peripheral portion that contributes to the stress concentration of the wire. That is, as shown in FIG. 6, an end portion where the tool bottom surface and the groove of the tool are in contact (provisionally abbreviated as A end portion), an end portion where the front and rear surfaces of the tool are in contact with the groove of the tool (provisionally B
(Abbreviated as end) and R (R) at the top of the groove.
【０００７】本発明はＡ端部及びＢ端部にＲ（アール）
を設けることならびに溝の頂部のＲ（アール）を適正範
囲にすることにある。図７は、それぞれＡ及びＢ端部に
Ｒ（アール）がない場合から、Ｒ（アール）の半径を使
用するワイヤの直径の５倍まで変化させたツールを用い
てウエッジボンディングした時の素子の損傷発生率を示
したものである。損傷はＲ（アール）がない場合が最も
多く発生するが、Ｒを設けることによって減少し、特に
０.２Ｄ(Ｄはワイヤの直径）以上で最小値を示すことが
わかる。従来のツールの端部のＲ(アール）は０.２Ｄ以
下である。Ｒ（アール）の半径が使用するワイヤの直径
の５倍以上になると接合性が損なわれるため、本発明は
Ａ端部及びＢ端部のＲ（アール）の半径が使用するワイ
ヤの直径の０.２ 倍から５倍のツールにある。また、本
発明は溝の頂部の半径を使用するワイヤの半径から５倍
にしたツールにある。５倍までにしたのはそれ以上にな
るとワイヤが溝から外れやすくなるためである。The present invention has R (R) at the A end and the B end.
Is provided and the R (R) at the top of the groove is set to an appropriate range. FIG. 7 shows a device when wedge bonding is performed using a tool in which the radius of R (R) is changed to 5 times the diameter of the wire to be used from the case where there is no R (R) at the A and B ends, respectively. It shows the damage occurrence rate. It can be seen that the damage occurs most often when there is no R (R), but it is reduced by providing R, and particularly, it shows that the minimum value is obtained at 0.2 D (D is the wire diameter) or more. The R (R) at the end of the conventional tool is 0.2 D or less. When the radius of R (R) is more than 5 times the diameter of the wire to be used, the bondability is impaired. Therefore, in the present invention, the radius of R (R) of the A end and the B end is 0 of the diameter of the wire to be used. .2x to 5x tools. The invention also resides in a tool in which the radius of the top of the groove is multiplied by 5 from the radius of the wire used. The reason for increasing the number to 5 times is that the wire is likely to come off from the groove when the number is more than 5 times.
【０００８】さらに本発明は、上記三方法をすべて有す
るか、あるいは二つ組み合わせることにある。そして本
発明は上記ツールを用いて半導体素子と電極板とをウエ
ッジボンディングして接続された半導体装置にある。Further, the present invention has all of the above three methods or a combination of the two methods. The present invention resides in a semiconductor device in which a semiconductor element and an electrode plate are connected by wedge bonding using the above tool.
【０００９】[0009]
【作用】この発明において、ツールの周辺部にＲ（アー
ル）が設けていることにより、ワイヤにかかる応力が局
部に集中せず、すなわち素子に応力が集中しないため素
子の損傷が防止でき、素子に損傷のない半導体装置が得
られる。In the present invention, the R (R) is provided in the peripheral portion of the tool, so that the stress applied to the wire is not locally concentrated, that is, the stress is not concentrated on the element, so that the element can be prevented from being damaged. A semiconductor device having no damage can be obtained.
【００１０】[0010]
【実施例】図１は本発明のツールの一実施例を示したも
のである。ツール底面とツールの溝との接する端部にＲ
（アール）が設けてあり、その半径が使用するワイヤの
直径の０.２ 倍の値であるものである。図２は本発明の
ツールの一実施例を示したものである。ツール頂部の半
径が使用するワイヤの半径の３倍の値であるものでる。
上記ツールによってワイヤを半導体素子にボンディング
すると、ワイヤが最も変形する部分の応力が均等に分散
されるため、素子にかかる応力も分散され損傷を与えな
い。図３は、本発明におけるツールを用いてウエッジボ
ンディングを行った場合の電力用半導体装置を示したも
のである。以下製作工程について述べる。まず、１及び
２の導電材でできている電極端子（１；コレクタ，２；
エミッタ）が設けてある３の絶縁板上に４の半導体素子
をハンダ等で接着する。つぎに本発明におけるツールを
用いて、５の直径０.５mm のアルミニウムワイヤを６の
パッド及び２の電極端子（エミッタ）にボンディングし
接続する。ゲートにも同様にボンディングする。その後
３の絶縁板に７の放熱板をハンダ等で接着し、端子８を
取付け全体を樹脂９でモールドし半導体装置が完成す
る。図４は本発明のツールを用いて、直径０.５mm のア
ルミニウムワイヤを半導体素子にボンディングしたとき
の素子の損傷発生率を従来のツールを用いた場合と比較
して示したものである。本発明においては従来の場合に
比べ、超音波出力を大きくして接合強度を高くしても半
導体素子に損傷が発生しにくいことがわかる。なお、本
発明はアルミニウムワイヤに限定されず、それ以外のワ
イヤ例えば金及び銅ワイヤにおいても同様の効果が得ら
れる。FIG. 1 shows an embodiment of the tool of the present invention. R at the end where the bottom of the tool and the groove of the tool contact
(R) is provided, and its radius is 0.2 times the diameter of the wire used. FIG. 2 shows an embodiment of the tool of the present invention. The radius of the tool top is 3 times the radius of the wire used.
When the wire is bonded to the semiconductor element by the above tool, the stress in the portion where the wire is most deformed is evenly distributed, and the stress applied to the element is also dispersed and does not cause damage. FIG. 3 shows a power semiconductor device when wedge bonding is performed using the tool of the present invention. The manufacturing process will be described below. First, electrode terminals (1; collector, 2;
The semiconductor element (4) is bonded to the insulating plate (3) provided with the emitter) with solder or the like. Next, using the tool of the present invention, an aluminum wire 5 having a diameter of 0.5 mm is bonded and connected to the pad 6 and the electrode terminal (emitter) 2. Bond the gate as well. Thereafter, the heat radiating plate 7 is bonded to the insulating plate 3 with solder or the like, the terminals 8 are attached, and the whole is molded with the resin 9 to complete the semiconductor device. FIG. 4 shows the damage occurrence rate of an element when an aluminum wire having a diameter of 0.5 mm is bonded to a semiconductor element using the tool of the present invention in comparison with the case of using a conventional tool. It is understood that in the present invention, the semiconductor element is less likely to be damaged even when the ultrasonic output is increased and the bonding strength is increased, as compared with the conventional case. The present invention is not limited to the aluminum wire, and the same effect can be obtained with other wires such as gold and copper wires.
【００１１】[0011]
【発明の効果】本発明は以上の説明から明らかなよう
に、ワイヤが最も変形し応力が集中する部分に寄与する
ツール周辺の端部にＲ（アール）を設けることによっ
て、ワイヤにかかる応力が均一分散し、そのため素子に
かかる応力も均一分散することにより素子の損傷が防止
され、信頼性の高い電力用半導体装置が達成される。As is apparent from the above description, according to the present invention, the stress applied to the wire is reduced by providing R (R) at the end portion around the tool which contributes to the portion where the wire is most deformed and the stress is concentrated. By uniformly dispersing the stress applied to the element, the element is prevented from being damaged, and a highly reliable power semiconductor device is achieved.
【図１】本発明の一実施例のツールの断面図である。FIG. 1 is a cross-sectional view of a tool according to an embodiment of the present invention.
【図２】同じくツールの断面図である。FIG. 2 is a sectional view of the same tool.
【図３】本発明のツールを用いてアルミニウムワイヤを
ボンディングしてなる電力用半導体装置の断面図であ
る。FIG. 3 is a sectional view of a power semiconductor device obtained by bonding an aluminum wire using the tool of the present invention.
【図４】本発明のツールを用いて半導体素子にボンディ
ングしたときの、素子の損傷発生率を従来のツールを用
いた場合と比較して示した図である。FIG. 4 is a diagram showing a damage occurrence rate of an element when bonding it to a semiconductor element using the tool of the present invention in comparison with a case of using a conventional tool.
【図５】従来のツールで半導体素子にボンディングした
ときの、素子の損傷の発生部を示した図である。FIG. 5 is a diagram showing a damaged portion of a device when the semiconductor device is bonded with a conventional tool.
【図６】ツール先端部の形状を示した図である。FIG. 6 is a diagram showing a shape of a tool tip portion.
【図７】損傷発生率とツール端部のＲ（アール）との関
係を示した図である。FIG. 7 is a diagram showing a relationship between a damage occurrence rate and R (R) of a tool end portion.
１…電極端子（コレクタ）、２…電極端子（エミッ
タ）、３…絶縁板、４…半導体素子、５…アルミニウム
ワイヤ，６…パッド、７…放熱板、８…端子、９…樹
脂。DESCRIPTION OF SYMBOLS 1 ... Electrode terminal (collector), 2 ... Electrode terminal (emitter), 3 ... Insulating plate, 4 ... Semiconductor element, 5 ... Aluminum wire, 6 ... Pad, 7 ... Heat sink, 8 ... Terminal, 9 ... Resin.
Claims (5)
いて、ツールの底面とツールの溝とが接する端部にＲ
（アール）を設け、そのＲ（アール）の半径が使用する
ワイヤの直径の０.２ 倍から５倍の値であることを特徴
とするボンディング装置。1. A grooved tool for wedge bonding, in which R is formed at the end where the bottom surface of the tool and the groove of the tool are in contact with each other.
A bonding apparatus characterized in that (R) is provided and the radius of R (R) is 0.2 to 5 times the diameter of the wire used.
いて、ツールの溝の半径がワイヤの半径と同じ値から５
倍の値であることを特徴とするボンディング装置。2. In a tool with a groove for wedge bonding, the radius of the groove of the tool is 5 to the same value as the radius of the wire.
A bonding device having a doubled value.
いて、ツールの前面及び後面とツールの溝とが接する端
部にＲ（アール）を設け、そのＲ（アール）の半径が使
用するワイヤの直径の０.２ 倍から５倍の値であること
を特徴とするボンディング装置。3. A grooved tool for wedge bonding is provided with R (R) at the end where the front and rear surfaces of the tool are in contact with the groove of the tool, and the radius of the R (R) is 0 of the diameter of the wire used. A bonding apparatus characterized by a value of 2 to 5 times.
れていることを特徴とするボンディング装置。4. A bonding apparatus comprising two or more of claims 1, 2 or 3.
ールを用いて、半導体素子と電極板とをボンディングさ
れたことを特徴とする半導体装置。5. A semiconductor device in which a semiconductor element and an electrode plate are bonded by using the tool according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4210054A JPH0661313A (en) | 1992-08-06 | 1992-08-06 | Bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4210054A JPH0661313A (en) | 1992-08-06 | 1992-08-06 | Bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0661313A true JPH0661313A (en) | 1994-03-04 |
Family
ID=16583053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4210054A Pending JPH0661313A (en) | 1992-08-06 | 1992-08-06 | Bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0661313A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100511A (en) * | 1996-02-12 | 2000-08-08 | Daimler-Benz Aktiengesellschaft | Method of bonding insulating wire and device for carrying out this method |
| WO2013112205A2 (en) * | 2011-09-20 | 2013-08-01 | Orthodyne Electronics Corporation | Wire bonding tool |
-
1992
- 1992-08-06 JP JP4210054A patent/JPH0661313A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100511A (en) * | 1996-02-12 | 2000-08-08 | Daimler-Benz Aktiengesellschaft | Method of bonding insulating wire and device for carrying out this method |
| WO2013112205A2 (en) * | 2011-09-20 | 2013-08-01 | Orthodyne Electronics Corporation | Wire bonding tool |
| WO2013112205A3 (en) * | 2011-09-20 | 2013-10-31 | Orthodyne Electronics Corporation | Wire bonding tool |
| CN103718281A (en) * | 2011-09-20 | 2014-04-09 | 奥托戴尼电气公司 | Wire bonding tool |
| US8820609B2 (en) | 2011-09-20 | 2014-09-02 | Orthodyne Electronics Corporation | Wire bonding tool |
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