JP2595908B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2595908B2
JP2595908B2 JP6240728A JP24072894A JP2595908B2 JP 2595908 B2 JP2595908 B2 JP 2595908B2 JP 6240728 A JP6240728 A JP 6240728A JP 24072894 A JP24072894 A JP 24072894A JP 2595908 B2 JP2595908 B2 JP 2595908B2
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor device
bonding
lead
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP6240728A
Other languages
Japanese (ja)
Other versions
JPH0774198A (en
Inventor
良介 佐藤
澄夫 穂苅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6240728A priority Critical patent/JP2595908B2/en
Publication of JPH0774198A publication Critical patent/JPH0774198A/en
Application granted granted Critical
Publication of JP2595908B2 publication Critical patent/JP2595908B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/061—Disposition
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明は、半導体装置、特に半導
体素子と、先端を上記半導体素子に向けて配設した支持
リード及びインナリードとを有し、上記半導体素子の電
極がボディングワイヤによりインナリードと電気的に接
続されてなる半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, in particular, a semiconductor device, having a support lead and an inner lead whose tips are directed toward the semiconductor device, wherein the electrodes of the semiconductor device are connected by a bonding wire. The present invention relates to a semiconductor device electrically connected to an inner lead.

【０００２】[0002]

【従来の技術】ＬＳＩ、ＶＬＳＩ等の半導体装置は、一
般に、リードフレームの各ダイパッドに半導体チップを
ダイボンディングし、半導体チップの各電極とそれに対
応するリードとの間を例えば金からなるワイヤによりボ
ンディングし、樹脂封止後リードフレームを切断すると
いう方法で製造される。図６はそのような従来の半導体
装置の樹脂封止前の状態を示すものであり、同図におい
て、ａはダイパッド、ｂ、ｂ・・・はリード、ｃは銀ペ
ースト等からなる接着剤、ｄは該接着剤ｃを介してダイ
パッドａ上にボンディングされた半導体チップ、ｅ、ｅ
・・・は半導体チップｄの電極、ｆ、ｆ・・・は半導体
チップｄの電極ｅ、ｅ、・・・とそれに対応するリード
ｂ、ｂ、・・・との間を接続する例えば金からなるボン
ディングワイヤである。2. Description of the Related Art In general, semiconductor devices such as LSIs and VLSIs have a semiconductor chip die-bonded to each die pad of a lead frame, and each electrode of the semiconductor chip and a corresponding lead are bonded by a wire made of, for example, gold. Then, it is manufactured by a method of cutting the lead frame after resin sealing. FIG. 6 shows a state of such a conventional semiconductor device before resin sealing, in which a is a die pad, b, b... Are leads, c is an adhesive made of silver paste or the like, d is a semiconductor chip bonded to the die pad a via the adhesive c, e and e
... are electrodes of the semiconductor chip d, f, f ... are electrodes connecting the electrodes e, e, ... of the semiconductor chip d and the corresponding leads b, b, ..., for example, from gold. Bonding wire.

【０００３】[0003]

【発明が解決しようとする課題】ところで、図６に示す
ような従来の半導体装置には、半導体チップｄの電極ｅ
とリードｂとの間を接続するものとして例えば金からな
るボンディングワイヤｆを用いており、そのワイヤｆが
電気的接続性の面から電極ｅにはボールボンディングに
より接続されるためにアーチ状に撓み、そして、この撓
みが樹脂パッケージｇの薄型化を制約する要因になって
いるという問題がある。樹脂封止型半導体装置において
は、樹脂パッケージの薄型化が強く要求され厚さを１．
０ｍｍ以下にするという要請も生じているので、ワイヤ
の撓みによって樹脂パッケージの薄型化が制約されると
いう問題は看過できないのである。The conventional semiconductor device as shown in FIG. 6 has an electrode e of a semiconductor chip d.
A bonding wire f made of, for example, gold is used as a connection between the lead and the lead b. The wire f is connected to the electrode e by ball bonding from the viewpoint of electrical connectivity, and is bent in an arch shape. And, there is a problem that this bending is a factor restricting the thinning of the resin package g. In a resin-encapsulated semiconductor device, it is strongly required to reduce the thickness of a resin package, and the thickness of the resin package is reduced to 1.
Since there is a demand for the thickness to be 0 mm or less, the problem that the bending of the wire restricts the thinning of the resin package cannot be overlooked.

【０００４】そのため、例えば特願平１−２９７１７４
号で本願出願人が提案したように、ダイパッドを取り去
り、半導体素子をリードフレームからフリーの状態で半
導体素子の電極とインナーリードとをボンディングワイ
ヤにより接続し、このインナーリードにより半導体素子
を保持することが試みられた。これによりダイパッドの
厚さ分半導体装置の薄型化を図ることができるからであ
る。しかしながら、リードと半導体素子の電極との間を
接続するボンディングワイヤによってのみ半導体素子を
支持することは機械的な面で不安定であった。そのた
め、ワイヤボンディング後樹脂封止前あるいは樹脂封止
中に半導体素子の位置がずれるというような問題があ
り、それがワイヤの断線、ワイヤの接触によるショート
不良の発生という問題があった。For this reason, for example, Japanese Patent Application No. 1-297174 is disclosed.
As proposed by the applicant of the present invention, removing the die pad, connecting the semiconductor element electrode and the inner lead with a bonding wire while the semiconductor element is free from the lead frame, and holding the semiconductor element by this inner lead. Was attempted. This is because the thickness of the semiconductor device can be reduced by the thickness of the die pad. However, it is mechanically unstable to support the semiconductor element only by the bonding wire connecting the lead and the electrode of the semiconductor element. Therefore, there is a problem that the position of the semiconductor element shifts after wire bonding before resin sealing or during resin sealing, which causes a problem of disconnection of a wire and occurrence of a short circuit due to contact of the wire.

【０００５】本発明はこのような問題点を解決すべく為
されたものであり、半導体素子と、先端を該半導体素子
に向けて配設した支持リード及びインナリードとを有
し、上記半導体素子の電極がボディングワイヤによりイ
ンナリードと電気的に接続されてなる半導体装置におい
て、半導体装置の薄型化を半導体素子の支持の安定性を
損なうことなく図ることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and has a semiconductor element, a support lead and an inner lead having tips disposed toward the semiconductor element. It is an object of the present invention to reduce the thickness of the semiconductor device without impairing the stability of supporting the semiconductor element in a semiconductor device in which the electrodes are electrically connected to the inner leads by a boding wire.

【０００６】[0006]

【課題を解決するための手段】請求項１の半導体装置
は、半導体素子が連結手段を介して支持リードにより支
持されてなることを特徴とする。請求項２の半導体装置
は、請求項１の半導体装置において、連結手段の高さが
ボンディングワイヤよりも低いことを特徴とする。According to a first aspect of the present invention, there is provided a semiconductor device, wherein a semiconductor element is supported by a supporting lead via a connecting means. According to a second aspect of the present invention, in the semiconductor device of the first aspect, the height of the connecting means is lower than that of the bonding wire.

【０００７】請求項３の半導体装置は、請求項１又は２
の半導体装置において、連結手段が半導体素子の電極と
インナリードとを接続するボンディングワイヤとは別の
ボンディングワイヤであることを特徴とする。請求項４
の半導体装置は、請求項１又は２記載の半導体装置にお
いて、連結手段が絶縁テープであることを特徴とする。According to a third aspect of the present invention, there is provided the semiconductor device according to the first or second aspect.
In the above semiconductor device, the connecting means is a bonding wire different from a bonding wire connecting the electrode of the semiconductor element and the inner lead. Claim 4
A semiconductor device according to claim 1 or 2, wherein the connecting means is an insulating tape.

【０００８】[0008]

【作用】請求項１の半導体装置によれば、半導体素子を
連結手段を介して支持リードにより支持するので、半導
体素子のワイヤボンディングから樹脂封止を終えるまで
における位置の安定性を高めることができる。請求項２
の半導体装置によれば、連結手段がボンディングワイヤ
よりも低いので、半導体装置の厚さを厚くする要因には
全くならない。According to the semiconductor device of the first aspect, since the semiconductor element is supported by the support lead via the connecting means, the position stability from the wire bonding of the semiconductor element to the end of the resin sealing can be improved. . Claim 2
According to this semiconductor device, since the connecting means is lower than the bonding wire, it does not cause any increase in the thickness of the semiconductor device.

【０００９】請求項３の半導体装置によれば、連結手段
として用いるボンディングワイヤは電気的接続性良くリ
ード、半導体素子のパッドに接続する必要性がなく、従
って、ボールボンディングにより接続する必要性がない
ので、ウェッジボンディングによる接続が可能になり、
従って、ワイヤの撓みによるアーチの高さが低くて済
む。依って、半導体装置の薄型化を図ることができる。According to the semiconductor device of the third aspect, the bonding wire used as the connecting means does not need to be connected to the lead and the pad of the semiconductor element with good electrical connectivity, and therefore does not need to be connected by ball bonding. Therefore, connection by wedge bonding becomes possible,
Therefore, the height of the arch due to the bending of the wire can be reduced. Accordingly, the thickness of the semiconductor device can be reduced.

【００１０】請求項４の半導体装置によれば、連結手段
が絶縁テープからなり、絶縁テープは例えば１０μｍ程
度と極めて薄いので、半導体装置の厚さを厚くする要因
には全くならない。また、絶縁テープを介して支持リー
ドにより半導体素子を強固に支持できるので、半導体素
子のワイヤボンディングから樹脂封止を終えるまでにお
ける位置の安定性を高めることができる。そして、支持
リードと半導体素子との間には絶縁テープが介在して半
導体素子の支持を強固に行うことができるので、ボンデ
ィングワイヤには半導体素子を支持する役割がなくな
り、単に電気的接続の役割のみを果たせば良くなった。
従って、ボンディングワイヤは長くても短くても良くな
り、その結果、同じ大きさのリードフレームで半導体チ
ップの大きさの違いに対応できる範囲を広げることがで
きる。換言すれば、大きなリードフレームで、大きな半
導体素子（チップ）に対応させることができることは勿
論のこと、比較的小さな半導体素子チップにも対応させ
ることができる。According to the semiconductor device of the present invention, since the connecting means is formed of an insulating tape, and the insulating tape is extremely thin, for example, about 10 μm, it does not cause any increase in the thickness of the semiconductor device. Further, since the semiconductor element can be firmly supported by the support leads via the insulating tape, the position stability from the wire bonding of the semiconductor element to the end of the resin sealing can be improved. And, since the insulating tape is interposed between the supporting lead and the semiconductor element, the semiconductor element can be firmly supported, so that the bonding wire does not have a role of supporting the semiconductor element, and merely has a role of electrical connection. I only had to do it.
Therefore, the bonding wire may be longer or shorter, and as a result, the range in which the size of the semiconductor chip can be accommodated by a lead frame of the same size can be expanded. In other words, not only can a large lead frame be used for a large semiconductor element (chip), but also a relatively small semiconductor element chip can be used.

【００１１】[0011]

【実施例】以下、本発明を図示実施例に従って詳細に説
明する。図１及び図２は本発明半導体装置の一つの実施
例を示すもので、図１は樹脂封止前における状態を示す
斜視図、図２は樹脂封止後の状態を示す断面図である。
１、１、・・・はリードフレームのインナーリード、
２、２、２、２は支持リードで、矩形の半導体素子３の
４つの角部に先端が臨まされている。この支持リード
２、２、２、２は電気的には中立（フローティングして
いる）であるが、半導体素子３を後述するボンディング
ワイヤを介して機械的に支持する役割を果す。該支持リ
ード２、２、２、２の樹脂パッケージから突出した部分
は樹脂封止後におけるリードフレームの不要部分除去の
際に除去される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the illustrated embodiments. 1 and 2 show one embodiment of the semiconductor device of the present invention. FIG. 1 is a perspective view showing a state before resin sealing, and FIG. 2 is a sectional view showing a state after resin sealing.
1, 1, ... are the inner leads of the lead frame,
Reference numerals 2, 2, 2, and 2 denote support leads, the leading ends of which are faced at four corners of the rectangular semiconductor element 3. The support leads 2, 2, 2, 2 are electrically neutral (floating), but play a role of mechanically supporting the semiconductor element 3 via bonding wires described later. The portions of the support leads 2, 2, 2, and 2 protruding from the resin package are removed when unnecessary portions of the lead frame are removed after resin sealing.

【００１２】４、４、・・・はタイバー、５、５、・・
・は電極パッドであり、半導体素子３の内部回路と電気
的に接続されている。６、６、６、６は半導体素子３の
角部に形成された支持用パッドであり、半導体素子３の
内部回路とは電気的に分離されている。７、７、・・・
は金からなるボンディングワイヤで、インナーリード
１、１、・・・の先端と電極パッド５、５、・・・との
間に接続されている。該ボンディングワイヤ７、７、・
・・は電極パッド５、５、・・・に対してはボールボン
ディングにより接続されている。電気的接続性の信頼度
の面からボールボンディングにより接続する必要性があ
るからである。但し、インナーリード１、１、・・・に
対してはウェッジボンディングにより接続されている。4, 4,... Are tie bars, 5, 5,.
Is an electrode pad, which is electrically connected to the internal circuit of the semiconductor element 3. Reference numerals 6, 6, 6, and 6 denote supporting pads formed at the corners of the semiconductor element 3, and are electrically separated from the internal circuit of the semiconductor element 3. 7, 7, ...
Are bonding wires made of gold, which are connected between the tips of the inner leads 1, 1,... And the electrode pads 5, 5,. The bonding wires 7, 7,.
Are connected to the electrode pads 5, 5,... By ball bonding. This is because it is necessary to perform connection by ball bonding in terms of the reliability of electrical connectivity. However, the inner leads 1, 1,... Are connected by wedge bonding.

【００１３】８、８、８、８はアルミニウムからなる支
持用のボンディングワイヤであり、半導体素子３の支持
用パッド６、６、６、６と支持リード２、２、２、２と
の間に接続されている。該ボンディングワイヤ８、８、
８、８は、電気的接続性良く支持リード２、２、２、２
及びパッド６、６、６、６に接続される必要はないので
ウェッジボンディングにより両端部とも接続されてお
り、従って、図２に示すように撓みによるアーチの高さ
はボンディングワイヤ７、７、・・・のそれよりも低
い。９は封止用樹脂パッケージである。このような半導
体装置は、ダイパッド及び接続用銀ペースト膜がない分
樹脂パッケージ９の厚さを薄くすることができる。そし
て、ワイヤボンディング後樹脂封止までの間において半
導体素子３はインナーリード１、１、・・・により金か
らなるボンディングワイヤ７、７、・・・を介して支持
されているのみならずインナーリード１、１、・・・よ
りも稍幅広で従って機械的強度の強い支持リード４、
４、４、４によりアルミニウムからなる支持用ボンディ
ングワイヤ８、８、８、８を介しても支持されているの
で、半導体素子３は従来よりも安定に支持できる。Reference numerals 8, 8, 8, and 8 denote supporting bonding wires made of aluminum, which are provided between the supporting pads 6, 6, 6, 6 of the semiconductor element 3 and the supporting leads 2, 2, 2, 2. It is connected. The bonding wires 8, 8,
8, 8 are support leads 2, 2, 2, 2 with good electrical connectivity.
And the ends are not connected to the pads 6, 6, 6, 6 and are also connected to both ends by wedge bonding. Therefore, as shown in FIG. 2, the height of the arch due to the bending is set to the bonding wires 7, 7,.・ ・ Lower than that of. Reference numeral 9 denotes a sealing resin package. In such a semiconductor device, the thickness of the resin package 9 can be reduced by the absence of the die pad and the silver paste film for connection. In addition, the semiconductor element 3 is supported by the inner leads 1, 1,... Via the bonding wires 7, 7,. The support leads 4, which are slightly wider than 1, 1,...
The semiconductor element 3 can be supported more stably than before because it is supported by the support bonding wires 8, 8, 8, 8 made of aluminum by 4, 4, 4.

【００１４】特に、ウェッジボンディングはボールボン
ディングに比較して機械的強度の面で優れているので、
支持リード４、４、４、４による支持用ボンディングワ
イヤ８、８、８、８を介しての支持による支持安定化効
果は大きい。依って、ワイヤボンディング後樹脂封止ま
での間及び樹脂封止中に半導体素子３が位置ずれを生じ
てワイヤ間が短絡したり、ワイヤが断線したりする虞れ
はなくなる。尚、支持用ボンディングワイヤ８、８、
８、８は両端ともウェッジボンディングされるので、図
２に示すようにボンディングワイヤ７、７、・・・より
もアーチが低くて済み、支持用ボンディングワイヤ８、
８、８、８によって半導体装置の樹脂パッケージ９が厚
くなる虞れはない。In particular, wedge bonding is superior to ball bonding in mechanical strength.
The support stabilizing effect by the support via the support bonding wires 8, 8, 8, 8 by the support leads 4, 4, 4, 4 is large. Therefore, there is no possibility that the semiconductor element 3 is displaced during the time from the wire bonding to the resin sealing and during the resin sealing, causing a short circuit between the wires or a break in the wires. The supporting bonding wires 8, 8,.
Since both ends of wedges 8 and 8 are wedge-bonded, the arch may be lower than that of bonding wires 7, 7,... As shown in FIG.
There is no possibility that the resin package 9 of the semiconductor device becomes thicker due to 8, 8, 8.

【００１５】図３及び図４は本発明半導体装置の他の実
施例を示すもので、図３は樹脂封止前における状態を示
す斜視図、図４は樹脂封止後の状態を示す断面図であ
る。本実施例はＤＩＬＰ型の半導体装置に本発明を適用
したもので、支持リード２、２、２、２がインナーリー
ド１、１、・・・が配設された二辺と別の二辺に設けら
れている。そして、該支持リード２、２、２、２により
絶縁テープ１０を介して半導体素子３を支持している。
具体的には、絶縁テープ１０の中間部を半導体素子３の
上面に接着し、絶縁テープ１０の両端部を支持リード
２、２、２、２の先端部の上面に接着することにより支
持リード２、２、２、２により絶縁テープ１０を介して
半導体素子３を支持した状態を形成している。3 and 4 show another embodiment of the semiconductor device of the present invention. FIG. 3 is a perspective view showing a state before resin sealing, and FIG. 4 is a sectional view showing a state after resin sealing. It is. In this embodiment, the present invention is applied to a DILP-type semiconductor device. Support leads 2, 2, 2, and 2 are provided on two sides on which inner leads 1, 1,. Is provided. Then, the semiconductor element 3 is supported by the supporting leads 2, 2, 2, 2 via the insulating tape 10.
More specifically, the intermediate portion of the insulating tape 10 is adhered to the upper surface of the semiconductor element 3, and both end portions of the insulating tape 10 are adhered to the upper surfaces of the tips of the support leads 2, 2, 2, 2. 2, 2, 2 form a state in which the semiconductor element 3 is supported via the insulating tape 10.

【００１６】そして、この状態でワイヤボンディングが
行われる。尤も、ワイヤボンディング後支持リード２、
２、２、２により絶縁テープ１０を介して半導体素子３
を支持する状態を形成しても良い。しかる後、樹脂封止
が行われる。そして、支持リード２、２、２、２の樹脂
パッケージ９から外部に突出した部分はリードフレーム
の不要部分の除去の際に除去される。本半導体装置によ
れば、ダイパッド及び接続用銀ペースト膜がない分樹脂
パッケージ９の厚さを薄くすることができる。また、半
導体素子３が支持リード２、２、２、２により絶縁テー
プ１０を介して安定に支持されているので、ワイヤボン
ディング後樹脂封止までの間及び樹脂封止中に半導体素
子３が位置ずれを起す虞れがなく、従って半導体素子３
の位置ずれによるワイヤ７の断線、ワイヤ７・７間のシ
ョート不良の発生の虞れもない。Then, wire bonding is performed in this state. However, after the wire bonding, the support lead 2
2, 2 and 2, the semiconductor element 3 via the insulating tape 10
May be formed. Thereafter, resin sealing is performed. Then, portions of the support leads 2, 2, 2, and 2 protruding from the resin package 9 to the outside are removed when unnecessary portions of the lead frame are removed. According to the present semiconductor device, the thickness of the resin package 9 can be reduced by the absence of the die pad and the connection silver paste film. Further, since the semiconductor element 3 is stably supported by the support leads 2, 2, 2, and 2 via the insulating tape 10, the semiconductor element 3 is positioned between the time after the wire bonding and the time of resin sealing and during the resin sealing. There is no danger that the semiconductor element 3
There is no risk of disconnection of the wire 7 and occurrence of short-circuit failure between the wires 7 due to misalignment.

【００１７】そして、絶縁テープ１０は１０μｍ程度の
厚さしかなく、ボンディングワイヤ７、７、・・・のア
ーチの高さ（１５０μｍ）に比較して低いので、絶縁テ
ープ１０の存在が半導体装置の厚さを厚くする要因とな
る虞れは全くない。また、リードの厚さが半導体装置を
厚くする要因にならないのでリード厚を厚くしてリード
曲りに対して充分な強度を有するようにすることもでき
る。そして、絶縁テープ１０を介して支持リード２、
２、２、２により半導体素子３を強固に支持することが
できるので、特願平１−２９７１７４の技術の場合に比
較して、同じリードフレームでチップの大きさの違いに
対応できる範囲が広くなる。Since the insulating tape 10 has a thickness of only about 10 μm, which is lower than the height of the arch (150 μm) of the bonding wires 7, 7,... There is no possibility that the thickness may be increased. Further, since the thickness of the lead does not become a factor for increasing the thickness of the semiconductor device, the thickness of the lead can be increased to have sufficient strength against the bending of the lead. Then, the support leads 2 are provided via the insulating tape 10,
Since the semiconductor element 3 can be firmly supported by 2, 2, and 2, the range in which the same lead frame can cope with the difference in chip size is wider than in the case of the technology of Japanese Patent Application No. 1-297174. Become.

【００１８】即ち、特願平１−２９７１７４の技術によ
れば、半導体素子の支持をインナーリードによりボンデ
ィングワイヤを介してのみ行っているので、半導体素子
のきちんとした支持にはインナーリード先端と半導体素
子の側面との距離及びボンディングワイヤの長さが一定
以下であることが不可欠であり、大きなチップ用に設計
されたリードフレームを小さなチップに用いることは難
しい。しかるに、本半導体装置によれば、ボンディング
ワイヤはインナーリードと半導体素子の電極との間の電
気的接続のみを行えば良いので、ボンディングワイヤが
多少長くても良い。従って、インナーリード先端と半導
体素子の側面との距離が大きくても良い。依って、大き
い半導体素子用のリードフレームを小さな半導体素子用
としても用いることが可能であり、チップサイズに対す
るリードフレームの適合範囲を広くできる。That is, according to the technique of Japanese Patent Application No. 1-297174, since the semiconductor element is supported only by the inner lead via the bonding wire, the tip of the inner lead and the semiconductor element are required for proper support of the semiconductor element. It is essential that the distance from the side surface and the length of the bonding wire be equal to or less than a certain value, and it is difficult to use a lead frame designed for a large chip for a small chip. However, according to the present semiconductor device, the bonding wire only needs to make electrical connection between the inner lead and the electrode of the semiconductor element, so that the bonding wire may be slightly longer. Therefore, the distance between the tip of the inner lead and the side surface of the semiconductor element may be large. Accordingly, a lead frame for a large semiconductor element can be used for a small semiconductor element, and the range of adaptation of the lead frame to the chip size can be widened.

【００１９】図５は図３及び図４に示した半導体装置の
変形例を示す平面図である。本半導体装置は、ＱＦＰＩ
Ｃに本発明を適用できるようにした変形例である。具体
的には、図１及び図２に示すようなリードフレーム、半
導体素子を用い、絶縁テープ１０として矩形の四つの角
部に放射状に支持リード接着片１１、１１、１１、１１
を有した形状のものを用い、該支持リード接着片１１、
１１、１１、１１を支持リード２、２、２、２に接着す
るようにしたものである。勿論、該絶縁テープ１０の本
体たる矩形部分を半導体素子３の上面に接着することは
いうまでもない。このように、絶縁テープ１０を変形さ
せることによりＱＦＰＩＣにも絶縁テープを連結手段と
して用いる態様で本発明を適用することが可能になる。FIG. 5 is a plan view showing a modification of the semiconductor device shown in FIGS. This semiconductor device is a QFPI
This is a modification in which the present invention can be applied to C. Specifically, using a lead frame and a semiconductor device as shown in FIGS. 1 and 2, support lead adhesive pieces 11, 11, 11, 11
The support lead adhesive piece 11 has a shape having
11, 11, 11 are bonded to the support leads 2, 2, 2, 2. Of course, it goes without saying that the rectangular portion as the main body of the insulating tape 10 is adhered to the upper surface of the semiconductor element 3. As described above, by deforming the insulating tape 10, the present invention can be applied to the QFPIC in a mode in which the insulating tape is used as a connecting means.

【００２０】[0020]

【発明の効果】請求項１の半導体装置によれば、半導体
素子を連結手段を介して支持リードにより支持するの
で、半導体素子のワイヤボンディングから樹脂封止を終
えるまでにおける位置の安定性を高めることができる。
請求項２の半導体装置によれば、連結手段がボンディン
グワイヤよりも低いので、半導体装置の厚さを厚くする
要因には全くならない。According to the semiconductor device of the first aspect, since the semiconductor element is supported by the support lead via the connecting means, the position stability from the wire bonding of the semiconductor element to the end of the resin sealing is improved. Can be.
According to the semiconductor device of the second aspect, since the connecting means is lower than the bonding wire, it does not cause any increase in the thickness of the semiconductor device.

【００２１】請求項３の半導体装置によれば、連結手段
として用いるボンディングワイヤは電気的接続性良くリ
ード、半導体素子のパッドに接続する必要性がなく、従
って、ボールボンディングにより接続する必要性がない
ので、ウェッジボンディングによる接続が可能になり、
従って、ワイヤの撓みによるアーチの高さが低くて済
む。依って、半導体装置の薄型化を図ることができる。According to the semiconductor device of the third aspect, the bonding wire used as the connecting means does not need to be connected to the lead and the pad of the semiconductor element with good electrical connectivity, and therefore does not need to be connected by ball bonding. Therefore, connection by wedge bonding becomes possible,
Therefore, the height of the arch due to the bending of the wire can be reduced. Accordingly, the thickness of the semiconductor device can be reduced.

【００２２】請求項４の半導体装置によれば、連結手段
が絶縁テープからなり、絶縁テープは例えば１０μｍ程
度と極めて薄いので、半導体装置の厚さを厚くする要因
には全くならない。また、絶縁テープを介して支持リー
ドにより半導体素子を強固に支持できるので、半導体素
子のワイヤボンディングから樹脂封止を終えるまでにお
ける位置の安定性を高めることができる。そして、支持
リードと半導体素子との間には絶縁テープが介在して半
導体素子の支持を強固に行うことができるので、ボンデ
ィングワイヤには半導体素子を支持する役割がなくな
り、単に電気的接続の役割のみを果たせば良くなった。
従って、ボンディングワイヤは長くても短くても良くな
り、その結果、同じ大きさのリードフレームで半導体チ
ップの大きさの違いに対応できる範囲を広げることがで
きる。According to the semiconductor device of the fourth aspect, since the connecting means is formed of an insulating tape, and the insulating tape is extremely thin, for example, about 10 μm, it does not cause any increase in the thickness of the semiconductor device. Further, since the semiconductor element can be firmly supported by the support leads via the insulating tape, the position stability from the wire bonding of the semiconductor element to the end of the resin sealing can be improved. And, since the insulating tape is interposed between the supporting lead and the semiconductor element, the semiconductor element can be firmly supported, so that the bonding wire does not have a role of supporting the semiconductor element, and merely has a role of electrical connection. I only had to do it.
Therefore, the bonding wire may be longer or shorter, and as a result, the range in which the size of the semiconductor chip can be accommodated by a lead frame of the same size can be expanded.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明半導体装置の一つの実施例の封止前にお
ける要部を示す斜視図である。FIG. 1 is a perspective view showing a main part of one embodiment of a semiconductor device of the present invention before sealing.

【図２】上記実施例の封止後における要部を示す断面図
である。FIG. 2 is a sectional view showing a main part after sealing in the above embodiment.

【図３】本発明半導体装置の他の実施例の封止前におけ
る要部を示す斜視図である。FIG. 3 is a perspective view showing a main part of another embodiment of the semiconductor device of the present invention before sealing;

【図４】上記他の実施例の封止後における要部の断面図
である。FIG. 4 is a cross-sectional view of a main part after sealing of the other embodiment.

【図５】図３及び図４に示した半導体装置の変形例を示
す平面図である。FIG. 5 is a plan view showing a modification of the semiconductor device shown in FIGS. 3 and 4;

【図６】従来例を示す断面図である。FIG. 6 is a sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

１ インナーリード ２ 支持リード ３ 半導体素子 ５ 電極 ８ ボンディングワイヤ（連結手段） １０ 絶縁テープ（連結手段） REFERENCE SIGNS LIST 1 inner lead 2 support lead 3 semiconductor element 5 electrode 8 bonding wire (connection means) 10 insulating tape (connection means)

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 半導体素子と、先端を該半導体素子に向
けて配設した支持リード及びインナリードとを有し、上
記半導体素子の電極がボディングワイヤによりインナリ
ードと電気的に接続されてなる半導体装置において、 上記半導体素子が連結手段を介して上記支持リードによ
り支持されてなることを特徴とする半導体装置1. A semiconductor device comprising: a semiconductor element; a support lead and an inner lead having tips disposed toward the semiconductor element; and electrodes of the semiconductor element are electrically connected to the inner lead by a bonding wire. In the semiconductor device, the semiconductor element is supported by the support lead via connecting means. 【請求項２】 連結手段の高さがボンディングワイヤよ
りも低いことを特徴とする請求項１記載の半導体装置2. The semiconductor device according to claim 1, wherein the height of the connecting means is lower than the height of the bonding wire. 【請求項３】 連結手段が半導体素子の電極とインナリ
ードとを接続するボンディングワイヤとは別のボンディ
ングワイヤであることを特徴とする請求項１又は２記載
の半導体装置3. The semiconductor device according to claim 1, wherein the connecting means is a bonding wire different from a bonding wire connecting the electrode of the semiconductor element and the inner lead. 【請求項４】 連結手段が絶縁テープであることを特徴
とする請求項１又は２記載の半導体装置4. The semiconductor device according to claim 1, wherein the connecting means is an insulating tape.
JP6240728A 1994-09-07 1994-09-07 Semiconductor device Expired - Fee Related JP2595908B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6240728A JP2595908B2 (en) 1994-09-07 1994-09-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6240728A JP2595908B2 (en) 1994-09-07 1994-09-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH0774198A JPH0774198A (en) 1995-03-17
JP2595908B2 true JP2595908B2 (en) 1997-04-02

Family

ID=17063827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6240728A Expired - Fee Related JP2595908B2 (en) 1994-09-07 1994-09-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2595908B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929035U (en) * 1982-08-17 1984-02-23 日本電気ホームエレクトロニクス株式会社 lead frame

Also Published As

Publication number Publication date
JPH0774198A (en) 1995-03-17

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