JP2799808B2 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JP2799808B2
JP2799808B2 JP4357133A JP35713392A JP2799808B2 JP 2799808 B2 JP2799808 B2 JP 2799808B2 JP 4357133 A JP4357133 A JP 4357133A JP 35713392 A JP35713392 A JP 35713392A JP 2799808 B2 JP2799808 B2 JP 2799808B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
lead
leads
mounting
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4357133A
Other languages
Japanese (ja)
Other versions
JPH06188353A (en
Inventor
厚生 能隅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tech Inc
Original Assignee
Mitsui High Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tech Inc filed Critical Mitsui High Tech Inc
Priority to JP4357133A priority Critical patent/JP2799808B2/en
Publication of JPH06188353A publication Critical patent/JPH06188353A/en
Application granted granted Critical
Publication of JP2799808B2 publication Critical patent/JP2799808B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、LOC型(リードフレ
ーム・オン・チップ)の半導体装置に係る、詳細には、
多数本のリードを備えたリードフレーム本体の裏面に、
半導体チップの回路表面領域の上方部に離間した状態で
多数本のリードが配設されるように、別体に形成した半
導体チップ搭載部を備えた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a LOC (lead frame-on-chip) semiconductor device.
On the back of the lead frame body with many leads,
The present invention relates to a semiconductor device having a semiconductor chip mounting portion formed separately so that a large number of leads are arranged in a state of being separated from an upper portion of a circuit surface area of a semiconductor chip.

【0002】[0002]

【従来の技術】近来、半導体装置は、半導体チップの高
集積化、大容量化に伴い半導体チップのサイズが大型化
しているが、樹脂封止サイズは小さく抑え、実装密度を
高める傾向にある。従って、この種の半導体装置は、特
開昭61−241959の公報に開示された、半導体チ
ップの回路形成面上に多数本のリードが両面に接着材を
備えた電気的に絶縁する絶縁テープを介在させて熱圧着
され、ボンディングワイヤの一端部が前記半導体チップ
の電極端子に連結され、他端部が前記リードに連結され
て電気的導通回路が形成されており、これらを樹脂部材
で封止したLOC(Lead On Chip)構造が
採用されている。
2. Description of the Related Art In recent years, semiconductor devices have become larger in size with higher integration and larger capacity of semiconductor chips, but the resin sealing size has been reduced and the mounting density has been increasing. Accordingly, this type of semiconductor device is disclosed in Japanese Patent Application Laid-Open No. 61-241959, in which an electrically insulating insulating tape having a large number of leads provided with adhesives on both surfaces is provided on a circuit forming surface of a semiconductor chip. One end of the bonding wire is connected to the electrode terminal of the semiconductor chip, and the other end is connected to the lead to form an electrical conduction circuit, and these are sealed with a resin member. LOC (Lead On Chip) structure is adopted.

【0003】この半導体装置によれば、半導体チップの
形状に規制されず半導体チップの電極端子に前記リード
を自由に引き回せるので、サイズの大きな半導体チップ
を封止することができる。しかし、この種の技術におい
ては、絶縁性テープを半導体チップの回路表面領域に接
着する際に、該半導体チップの回路表面領域を損傷させ
るという問題や前記リードのワイヤボンディング領域に
ボンディングワイヤを圧着接続する際に、前記半導体チ
ップの回路表面領域に衝撃荷重や圧着荷重が加わり、前
記半導体チップの回路表面領域を損傷させるなど問題を
有していた。
According to this semiconductor device, since the leads can be freely routed to the electrode terminals of the semiconductor chip without being restricted by the shape of the semiconductor chip, a large-sized semiconductor chip can be sealed. However, in this type of technology, when the insulating tape is bonded to the circuit surface area of the semiconductor chip, there is a problem that the circuit surface area of the semiconductor chip is damaged or a bonding wire is crimped to the wire bonding area of the lead. In such a case, an impact load or a crimping load is applied to the circuit surface area of the semiconductor chip, which has a problem that the circuit surface area of the semiconductor chip is damaged.

【0004】そこで、上記の問題点を解決するために、
特開平2−246125の公報に開示された、多数本の
リードが前記半導体チップの回路表面領域の上方部に絶
縁テープの介在なしに浮いた状態で配設されており、一
端がこの半導体チップの電極端子に接続され、他端が前
記リードのワイヤボンディング領域に接続したボンディ
ングワイヤを介在させて電気的導通回路が形成されてお
り、これらの半導体チップ、ボンディングワイヤ及び前
記リードの一端部側をモールド樹脂で封止された構造の
半導体装置及びその製造方法が提示されている。
In order to solve the above problems,
A large number of leads, which are disclosed in Japanese Patent Application Laid-Open No. 2-246125, are provided above the circuit surface area of the semiconductor chip in a floating state without an insulating tape interposed therebetween, and one end of the semiconductor chip is provided at one end of the semiconductor chip. An electrical conduction circuit is formed with a bonding wire connected to the electrode terminal and the other end connected to the wire bonding area of the lead, and these semiconductor chips, the bonding wire and one end of the lead are molded. A semiconductor device having a structure sealed with a resin and a method for manufacturing the same are proposed.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、開示さ
れた従来技術の半導体装置では、多数本のリードを半導
体チップの回路形成面上に浮いた状態で配設するため
に、前記リードフレームに一体に形成された支持リード
の下方に屈折した先端部の側面で前記半導体チップの側
端面に接着材又は支持リードの弾性力を利用して接着又
は挟持固定して半導体チップが支持されている。従っ
て、半導体チップを搭載する際に、該チップの位置ずれ
や半導体チップに圧接の残留応力が不均一に生じて半導
体チップを破損するなど半導体装置の長期信頼性を低下
させる問題があった。また、半導体チップの回路形成面
上に多数本のリードが浮いた状態で配設されているた
め、前記リードの先端のワイヤボンディング領域部が自
由端となるので、リードの寄りや浮き沈みが生じてワイ
ヤボンディング領域の位置が不安定となりワイヤのボン
ダビリティを低下させるという問題があった。さらに、
半導体チップを接着又は挟持固定する際に、位置決め用
治具や支持リードを押し広げる治具を必要とし、作業効
率を低下させるという問題があった。
However, in the disclosed prior art semiconductor device, since a large number of leads are arranged in a state of floating on the circuit forming surface of the semiconductor chip, they are integrated with the lead frame. The semiconductor chip is supported by being adhered or sandwiched and fixed to the side end surface of the semiconductor chip at the side surface of the tip bent downwardly below the formed support lead by using an adhesive or the elastic force of the support lead. Therefore, when the semiconductor chip is mounted, there has been a problem that the long-term reliability of the semiconductor device is deteriorated, such as a positional shift of the chip or a non-uniform residual stress caused by pressure contact with the semiconductor chip, thereby damaging the semiconductor chip. Further, since a large number of leads are arranged in a floating state on the circuit forming surface of the semiconductor chip, the wire bonding area at the tip of the lead becomes a free end, so that the lead is shifted or ups and downs occur. There has been a problem that the position of the wire bonding region becomes unstable and the bondability of the wire is reduced. further,
When the semiconductor chip is bonded or sandwiched and fixed, a positioning jig and a jig for pushing and spreading the support lead are required, and there is a problem that the working efficiency is reduced.

【0006】本発明の目的は、多数本のリードが半導体
チップの回路形成面上に離間した状態で配設された半導
体装置において、半導体チップを搭載する際に生じる
導体チップの電極端子とこれに対応する多数本のリード
との位置ずれや残留応力の滞有を防ぐと共に、半導体チ
ップが発する熱の拡散効率を向上させ長期信頼性の高い
半導体装置を提供することにある。
An object of the present invention is to provide a semiconductor device which is arranged in a state in which a large number of leads are spaced on the circuit forming surface of the semiconductor chip, semi occurring when mounting the semiconductor chip
Electrode terminals of the conductor chip and the corresponding number of leads
It is an object of the present invention to provide a semiconductor device with high long-term reliability by preventing misalignment and residual stress from being retained, and improving the diffusion efficiency of heat generated by a semiconductor chip.

【0007】[0007]

【問題を解決するための手段】上記の目的を達成する請
求項1記載の半導体装置は、回路内部表面領域に複数の
電極端子を有する半導体チップと、一端部が前記半導体
チップの電極端子に連結された多数本のリードを前記電
極端子の周辺に隣接配置した所定のリードフレーム本体
と、前記多数本のリードが前記半導体チップの上部に離
間した状態で配設されるようにリードフレーム本体の裏
面に接合支持された半導体チップ支持部と、前記半導体
チップ、前記半導体チップ支持部、及び前記多数本のリ
ードの一端部側を封止する樹脂封止部材とから成る半導
体装置であって、 前記半導体チップ支持部は、前記半導
体チップを搭載する搭載部を中央に備え、該搭載部を囲
む枠形の接合平坦部を、複数の吊りリードを形成する貫
通孔を有する外縁部の外側に設けて、該接合平坦部を残
し、前記外縁部の吊りリードを折り曲げて半導体チップ
搭載面をダウンセットして形成された別体の導電体ケー
ジであり、そして前記導電体ケージは、半導体チップを
搭載した状態で、その接合平坦部で接合リード及び多数
本のリードとを一括連結するように、両面に接着材層を
設けた絶縁性テープを介して前記リードフレームの裏面
側に接合支持された構成としたことを特徴とするもので
ある。また、請求項2記載の半導体装置は、請求項1記
載の半導体装置において、前記リードフレーム本体は、
外枠の内側に形成された第1、第2のリード群から成る
多数本のリードと外枠からこれと同一平面内に突出した
一対の接合リードとで構成されており、該各リード群の
先端部のワイヤボンディング領域及び接合リード部の先
端部領域を含む裏面側にのみ、片面に接着材を有し、半
導体チップの電極バッドが露出する貫通孔を設けた絶縁
性テープを貼着し、これらを一体的に連結した構成とし
たことを特徴とするものである。
According to a first aspect of the present invention, there is provided a semiconductor device, comprising :
A semiconductor chip having electrode terminals;
A large number of leads connected to the electrode terminals of the chip
Predetermined lead frame body placed adjacent to the pole terminal
And the large number of leads are separated above the semiconductor chip.
Behind the lead frame body so that it is
A semiconductor chip supporting portion joined and supported on a surface, and the semiconductor
A chip, the semiconductor chip support, and the plurality of
And a resin sealing member for sealing one end of the semiconductor chip.
In the body device, the semiconductor chip supporting portion includes a mounting portion for mounting the semiconductor chip at the center, a frame-shaped joining flat portion surrounding the mounting portion, and a through hole for forming a plurality of suspension leads. The semiconductor chip is provided outside the outer edge portion, and the suspension lead at the outer edge portion is bent while leaving the bonding flat portion.
A separate conductor cage formed by setting the mounting surface down, and the conductor cage holds a semiconductor chip.
In the mounted state, adhesive layers are applied to both sides so that the joint leads and many leads are connected together at the joint flat part.
The lead frame is joined and supported on the back surface of the lead frame via the provided insulating tape. The semiconductor device according to claim 2 is the semiconductor device according to claim 1, wherein the lead frame main body is
Consisting of first and second lead groups formed inside the outer frame
Projected from many leads and outer frame in the same plane
It consists of a pair of joining leads,
Wire bonding area at the tip and the end of the bonding lead
Only on the back side including the end area, has an adhesive on one side,
Insulation with through holes that expose the electrode pads of the conductor chip
Adhesive tape, and these are integrally connected.
It is characterized by having.

【0008】[0008]

【作用】請求項1記載の半導体装置においては、別体に
形成された導電体ケージの接合平坦部は両面接着材付き
絶縁性テープを介して接合リード及び多数本のリードに
一体的に接続支持されているので、従来技術のように半
導体チップに不均一な応力が加わらなくなり、半導体チ
ップ搭載部の反り、傾き等の変形による半導体チップの
破損を防止すると共に、半導体チップの発する熱を接合
平坦部を介して接合リード及び多数本のリードに拡散す
る。さらに、導電体ケージ部材の材質や表面処理用の材
質を選定する自由度が増し、従来に比べ半導体チップの
熱拡散効率を著しく向上させる。さらに、接合平坦部
は、両面接着材付き絶縁性テープを介して接合リード及
び多数本のリードに一体的に接合されているので、多数
本のリードの初期位置を維持する。さらに、半導体チッ
プを搭載する際に、従来技術で用いた支持治具を必要と
しなくなるので、半導体チップの搭載作業が容易になり
作業効率が向上する。また、請求項2記載の半導体装置
は、請求項1記載の半導体装置にあって、片面接着材付
き絶縁性テープは接合平坦部の接合位置から離間し、接
合リードと多数本のリードとを一体的に連接されている
ので、多数本のリードの先端が拘束され、リードの寄り
や浮き沈みが改善されると共に、ワイヤボンディングの
際に生じるリードの曲がりの影響もなく、ワイヤボンデ
ィング領域の位置が安定し、ボンダビリティを向上させ
る。
In the semiconductor device according to the first aspect, the joint flat portion of the conductor cage formed separately has a double-sided adhesive.
For bonding leads and many leads via insulating tape
Since they are integrally connected and supported, they are half as in the prior art.
Non-uniform stress is no longer applied to the conductor chip and the semiconductor chip
Of the semiconductor chip due to deformation such as warpage and tilt of the
Prevents damage and joins heat generated by semiconductor chips
Diffusion into bonding leads and many leads through flat parts
You. Further, the degree of freedom in selecting the material of the conductor cage member and the material for surface treatment is increased, and the heat diffusion efficiency of the semiconductor chip is remarkably improved as compared with the related art. Furthermore, the joint flat part
Is connected to the bonding lead via insulating tape with double-sided adhesive.
Because it is integrally joined to the beauty large number of leads, a number
Maintain the initial position of the book lead . Further, when mounting the semiconductor chip, the support jig used in the prior art is not required, so that the mounting operation of the semiconductor chip is facilitated and the working efficiency is improved. A semiconductor device according to a second aspect of the present invention is the semiconductor device according to the first aspect, further comprising a single-sided adhesive.
The insulating tape is separated from the joining position of the
It is integrally continuous contact with and covering the lead and a plurality of lead
Because the ends of many leads are restrained,
And ups and downs are improved, and wire bonding
The wire bond is not affected by lead bending
The position of the bonding area is stable, improving bondability
You.

【0009】[0009]

【実施例】続いて、添付した図面に基づき、本発明の詳
細について説明する。ここに、図1は本発明の半導体装
置の一実施例の概要を示す断面図、図2は本発明に用い
たリードフレーム本体の概要を示す平面図、図3は本発
明に用いた半導体チップ搭載部を備えた導電体ケージの
概要を示す斜視図である。まず、本発明の実施の一例で
あるDRAM用の半導体装置の構成について説明する。
Next, the details of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a sectional view showing an outline of an embodiment of the semiconductor device of the present invention, FIG. 2 is a plan view showing an outline of a lead frame body used in the present invention, and FIG. 3 is a semiconductor chip used in the present invention. It is a perspective view which shows the outline | summary of the conductor cage provided with the mounting part. First, a configuration of a semiconductor device for a DRAM according to an embodiment of the present invention will be described.

【0010】この種の半導体装置10は、図1に示すよ
うに、内部表面領域に複数の信号用、電源用及び接地用
の電極端子(パット)を所定位置に配置した半導体チッ
プ11と、多数本のリード12及び電源用及び接地用の
共用リード12a、12bと該リード12の先端部付近
及び共用リード12a、12bを一括連結する絶縁性テ
ープ13と前記半導体チップ11を搭載した導電体ケー
ジ14を接合する接合リード部15とを一体に形成した
リードフレーム本体16と、該リードフレーム本体16
のリードの一部が前記半導体チップ11の内部表面領域
の上方部に離間した状態で配設されるように、半導体チ
ップ搭載部18を備えた導電体ケージ14とを構成部材
として使用されている。
As shown in FIG. 1, a semiconductor device 10 of this type includes a semiconductor chip 11 in which a plurality of signal, power and ground electrode terminals (patts) are arranged at predetermined positions in an internal surface region, and The lead 12 and the common leads 12a and 12b for power and ground, the insulating tape 13 for connecting the vicinity of the tip of the lead 12 and the common leads 12a and 12b collectively, and the conductor cage 14 on which the semiconductor chip 11 is mounted Lead frame body 16 integrally formed with joining lead portion 15 for joining
The conductor cage 14 having the semiconductor chip mounting portion 18 is used as a constituent member so that a part of the lead of the semiconductor chip 11 is disposed above the internal surface region of the semiconductor chip 11 in a spaced state. .

【0011】前記導電体ケージ14に半導体チップ11
を搭載し、この導電体ケージを両面に接着材を備えた絶
縁性の両面接着テープ17を介在させて前記リードフレ
ーム本体16に一体に形成した接合リード部15及びリ
ード12に、これらを一括連結して熱圧着されている。
The semiconductor chip 11 is mounted on the conductor cage 14.
The conductor cage is connected to the joining lead portion 15 and the lead 12 integrally formed on the lead frame main body 16 with an insulating double-sided adhesive tape 17 provided with an adhesive on both sides interposed therebetween. And then thermocompression bonded.

【0012】そして、ボンディングワイヤ19の一端部
が前記半導体チップ11の電極端子に連結され、その他
端が多数本のリード12または共用リード12a、12
bのワイヤボンディング領域20に接続されて電気的導
通回路が構成されている。
One end of the bonding wire 19 is connected to an electrode terminal of the semiconductor chip 11, and the other end is connected to a number of leads 12 or common leads 12a and 12a.
The electrical conduction circuit is formed by being connected to the wire bonding region 20 of b.

【0013】これらの前記半導体チップ11、導電性ケ
ージ14及び前記リード12のワイヤボンディング領域
20側の一端部を樹脂封止し、この樹脂封止部21から
露出したリードの不要部分の除去を行い、該リードを所
定の形状にフォミングして半導体装置10が構成されて
いる。つぎに、上記半導体装置の構成部材について図
2、図3に基づき説明する。
One end of the semiconductor chip 11, the conductive cage 14, and the lead 12 on the wire bonding region 20 side is sealed with resin, and unnecessary portions of the lead exposed from the resin sealing portion 21 are removed. The semiconductor device 10 is formed by forming the leads into a predetermined shape. Next, components of the semiconductor device will be described with reference to FIGS.

【0014】前記リードフレーム本体16は、図2によ
れば、金属条材をプレス加工又は/及びエッチング加工
など一般的に知られた形状加工方法によって、半導体チ
ップ11の内部表面領域に配列した電極端子に隣接する
ような位置に離間対応して配置した第1のリード群A、
第2のリード群Bと該リード群のそれぞれの両端リード
に接続すると共にリードの先端面に平行し、且つ、離間
して配設した共用リード12a、12bを有する多数本
のリード12と、該リード12を保持する位置決め孔2
2を適切な位置に配列した外枠23と、該外枠23に導
電体ケージ14が接合する所要数のアンカーホール24
を設けた接合リード部15とで構成された所定形状のリ
ードフレーム連続条材を形成する。
According to FIG. 2, the lead frame main body 16 has electrodes formed by arranging metal strips on the inner surface area of the semiconductor chip 11 by a generally known shape processing method such as pressing and / or etching. A first lead group A arranged correspondingly at a position adjacent to the terminal,
A plurality of leads 12 having shared leads 12a and 12b connected to the second lead group B and both end leads of each of the lead groups and parallel to the leading end surface of the leads and spaced apart from each other; Positioning hole 2 for holding lead 12
2 are arranged at appropriate positions, and a required number of anchor holes 24 to which the conductor cage 14 is joined to the outer frame 23.
A continuous lead frame member having a predetermined shape constituted by the joining lead portion 15 provided with the lead is formed.

【0015】次いで、前記リードフレームの連続条材の
所要部分にPd、Agなどのめっき被覆を行い、前記
リード先端部と前記接合リード部15とを一括して連
結する片面接着材付き絶縁性テープ13を圧着した所要
の形状を具備して形成されている。したがって、これに
より前記各リード12の先端部と前記接合リード部15
とが一括して連接され、前記各リード12の位置のバラ
ツキやリードの浮き沈みがなくなり、ボンダビリティ
を向上させることができると共に、接合リード部15に
アンカーホール24を所要数設けているから、該アンカ
ーホール24に接着材が充填され導電体ケージ14の接
合がより強固となり接合が安定する。
[0015] Then, the <br/> required portion of the continuous strip material of the lead frame, performs Pd, the plating coating such as Ag, the
It is formed so as to have a required shape in which an insulating tape 13 with a single-sided adhesive for connecting the leading end of each lead and the joining lead 15 collectively is pressed. Therefore, this allows the leading end of each lead 12 and the joining lead 15
: It is connected collectively, the eliminated position variations of and each lead vicissitudes of the leads 12, it is possible to improve the bondability, the anchor holes 24 because they provided the required number of joint leads 15, The anchor
The hole 24 is filled with an adhesive, and the joining of the conductor cage 14 is further strengthened and the joining is stabilized.

【0016】次に、前記リードフレーム本体16に接合
する導電体ケージ14は、図3によれば、所定の金属条
材をプレス加工又は/及びエッチング加工など一般的に
知られた加工方法によって、中央部に半導体チップ搭載
部18と、該搭載部18を支持する複数の吊りリード2
5を形成する貫通孔26を備えた外縁部27と、該外縁
部27の外側に前記リードフレーム本体16の接合リー
ド部15及び各リード群A、Bのリードに接合する両面
に接着材を備えた絶縁性テープ18を粘着した接合平坦
部28とを設けて、これらを保持するタブ29と位置決
め孔30を設けたサイドレールの外枠31の形状を形成
し、前記接合平坦部28を残して前記搭載部18を前記
外縁部27でダウンセットし、前記タブ29を介してサ
イドレールの外枠31に導電体ケージ14が連接して構
成された条材が形成される。
Next, as shown in FIG. 3, the conductor cage 14 to be joined to the lead frame body 16 is formed by pressing a predetermined metal strip material and / or etching by a generally known processing method. A semiconductor chip mounting portion 18 is provided at a central portion, and a plurality of suspension leads 2 supporting the mounting portion 18.
An outer edge 27 having a through-hole 26 forming the joint 5, and an adhesive material on both sides of the outer edge 27 that are joined to the joining lead 15 of the lead frame body 16 and the leads of the lead groups A and B. A flat joint 28 to which the insulating tape 18 is adhered is formed, and a tab 29 for holding them and an outer frame 31 of a side rail provided with a positioning hole 30 are formed, and the flat joint 28 is left. The mounting portion 18 is set down at the outer edge portion 27, and a strip formed by connecting the conductor cage 14 to the outer frame 31 of the side rail via the tab 29 is formed.

【0017】前記連接して構成された導電体ケージ14
の条材の半導体チップ搭載部18に半導体チップ11を
搭載し、前記条材の不要部分を除去して前記リードフレ
ーム本体16の接合リード部15に両面に接着材を塗布
した絶縁性テープ17を介在させて接合している。した
がって、導電体ケージ14のダウンセットされた半導体
チップ搭載部18に半導体チップ11を載置しているか
ら、半導体チップ11の回路表面とリードフレーム本体
16との間隙が容易に形成できると共に搭載作業が容易
になる。導電体ケージ14が別体に形成されているか
ら、導電体ケージ14の材質、表面処理の選択巾が広が
ると共に半導体チップ11の裏面全領域を支持している
ので熱の拡散効率が従来技術に比べ著しく向上すると共
に安定する。前記リードと前記接合リード部とを前記導
電体ケージの接合部で一括連結しているのでリード間の
接続が従来技術に比較して強固になり樹脂封止部から露
出したリードを所定の形状にフォミングする際のリード
の移動がなくなり外部からリードに沿って環境中の汚染
源の侵入がなくなる。
[0017] The conductive cage 14 constructed in a connected manner.
The semiconductor chip 11 is mounted on the semiconductor chip mounting portion 18 of the strip material, the unnecessary portion of the strip material is removed, and the bonding tape 15 of the lead frame main body 16 is coated with an insulating tape 17 coated with an adhesive on both sides. Joined with interposition. Therefore, since the semiconductor chip 11 is mounted on the down-set semiconductor chip mounting portion 18 of the conductor cage 14, a gap between the circuit surface of the semiconductor chip 11 and the lead frame body 16 can be easily formed, and the mounting work can be performed. Becomes easier. Since the conductor cage 14 is formed separately, the range of choice of the material and surface treatment of the conductor cage 14 is widened, and the entire surface of the back surface of the semiconductor chip 11 is supported. It is significantly improved and stable. Since the leads and the joining lead portions are collectively connected at the joining portion of the conductor cage, the connection between the leads becomes stronger as compared with the related art, and the leads exposed from the resin sealing portion have a predetermined shape. There is no movement of the lead during the forming, and there is no intrusion of an environmental contamination source from the outside along the lead.

【0018】以上、本発明の実施例について説明した
が、本発明の特徴とするところは、半導体チップの回路
表面領域の上方部に多数本のリードが離間した状態で配
設するために、半導体チップを搭載する半導体チップ搭
載部を別体に形成した導電体ケージを接合して構成した
ことにある。したがって、本発明はこの実施例に限定さ
れるものでなく、要旨を逸脱しない範囲において種々の
変更可能であることは勿論である。
Although the embodiments of the present invention have been described above, the feature of the present invention is that a large number of leads are arranged above a circuit surface area of a semiconductor chip in a separated state. The semiconductor chip mounting portion on which the chip is mounted is formed by joining a conductor cage formed separately. Therefore, the present invention is not limited to this embodiment, and it is needless to say that various modifications can be made without departing from the scope of the invention.

【0019】[0019]

【発明の効果】半導体チップの回路表面領域の上方部に
多数本のリードが離間した状態で配設された半導体装置
において、前記半導体チップを搭載する半導体チップ搭
載部を有する導電体ケージを別体に形成しているので、
半導体チップを搭載する際に生じる位置ずれや半導体チ
ップに滞有する残留応力がなくなると共に半導体チップ
の発する熱の拡散効率が向上し、半導体装置の長期信頼
性が向上する。さらに、従来技術において用いた半導体
チップを搭載する際に、従来技術において用いた半導体
チップの搭載用治具を必要としなくなるので作業性が向
上する。
According to the present invention, in a semiconductor device having a large number of leads spaced apart above a circuit surface area of a semiconductor chip, a conductor cage having a semiconductor chip mounting portion for mounting the semiconductor chip is separately provided. Because it is formed in
The displacement and the residual stress that remains in the semiconductor chip when mounting the semiconductor chip are eliminated, the diffusion efficiency of heat generated by the semiconductor chip is improved, and the long-term reliability of the semiconductor device is improved. Furthermore, when mounting the semiconductor chip used in the prior art, the jig for mounting the semiconductor chip used in the prior art is not required, so that the workability is improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例に係る半導体装置の構成の概
要を示す断面図である。
FIG. 1 is a cross-sectional view illustrating an outline of a configuration of a semiconductor device according to an embodiment of the present invention.

【図2】本発明の実施に用いたリードフレーム本体の概
要を示す平面図である。
FIG. 2 is a plan view showing an outline of a lead frame main body used for carrying out the present invention.

【図3】本発明の実施に用いた導電体ケージの概要を示
す斜視図である。
FIG. 3 is a perspective view showing an outline of a conductor cage used for carrying out the present invention.

【符号の説明】[Explanation of symbols]

10 半導体装置 11 半導体チップ 12 リード 12a 電源用共用リード 12b 接地用共用リード 13 絶縁性テープ 14 導電体ケージ 15 接合リード部 16 リードフレーム本体 17 両面接着テープ 18 半導体チップ搭載部 19 ボンディングワイヤ 20 ワイヤボンディング領域 21 樹脂封止部 22 位置決め孔 23 外枠 24 アンカーホール 25 吊りリード 26 貫通孔 27 外縁部 28 接合平坦部 29 タブ 30 位置決め孔 31 外枠 DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Semiconductor chip 12 Lead 12a Power supply common lead 12b Grounding common lead 13 Insulating tape 14 Conductor cage 15 Bonding lead part 16 Lead frame main body 17 Double-sided adhesive tape 18 Semiconductor chip mounting part 19 Bonding wire 20 Wire bonding area DESCRIPTION OF SYMBOLS 21 Resin sealing part 22 Positioning hole 23 Outer frame 24 Anchor hole 25 Suspension lead 26 Through hole 27 Outer edge part 28 Joint flat part 29 Tab 30 Positioning hole 31 Outer frame

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 回路内部表面領域に複数の電極端子を有
する半導体チップと、一端部が前記半導体チップの電極
端子に連結された多数本のリードを前記電極端子の周辺
に隣接配置した所定のリードフレーム本体と、前記多数
本のリードが前記半導体チップの上部に離間した状態で
配設されるようにリードフレーム本体の裏面に接合支持
された半導体チップ支持部と、前記半導体チップ、前記
半導体チップ支持部、及び前記多数本のリードの一端部
側を封止する樹脂封止部材とから成る半導体装置であっ
て、 前記半導体チップ支持部は、 前記半導体チップを搭載す
る搭載部を中央に備え、該搭載部を囲む枠形の接合平坦
部を、複数の吊りリードを形成する貫通孔を有する外縁
部の外側に設けて、該接合平坦部を残し、前記外縁部
吊りリードを折り曲げて半導体チップ搭載面をダウンセ
ットして形成された別体の導電体ケージであり、そして
前記導電体ケージは、半導体チップを搭載した状態で、
その接合平坦部で接合リード及び多数本のリードとを一
括連結するように、両面に接着材層を設けた絶縁性テー
プを介して前記リードフレームの裏面側に接合支持され
た構成としたことを特徴とする半導体装置。
A plurality of electrode terminals are provided in a surface area inside a circuit.
Semiconductor chip, and one end of which is an electrode of the semiconductor chip
Connect a number of leads connected to the terminal around the electrode terminal
A predetermined lead frame main body arranged adjacent to the
With the book leads separated above the semiconductor chip
Joined and supported on the back of the lead frame body so that it is arranged
Semiconductor chip support portion, the semiconductor chip,
A semiconductor chip support, and one end of the plurality of leads
And a resin sealing member for sealing the side.
The semiconductor chip supporting portion includes a mounting portion for mounting the semiconductor chip at the center thereof, and a frame-shaped joining flat portion surrounding the mounting portion is formed outside of an outer edge portion having a through hole forming a plurality of suspension leads. At the outer edge portion , leaving the joining flat portion .
A separate conductor cage formed by bending the suspension leads and down-setting the semiconductor chip mounting surface , and
The conductor cage is mounted with a semiconductor chip,
The joint flat portion and the large number of leads are collectively connected at the joint flat portion, and are configured to be joined and supported on the back side of the lead frame via an insulating tape provided with an adhesive layer on both surfaces. Characteristic semiconductor device.
【請求項2】 前記リードフレーム本体は、外枠の内側
に形成された第1、第2のリード群から成る多数本のリ
ードと外枠からこれと同一平面内に突出した一対の接合
リードとで構成されており、該各リード群の先端部のワ
イヤボンディング領域及び接合リード部の先端部領域を
含む裏面側にのみ、片面に接着材を有し、半導体チップ
の電極バッドが露出する貫通孔を設けた絶縁性テープを
貼着し、これらを一体的に連結した構成としたことを特
徴とする請求項1記載の半導体装置。
2. The lead frame body is provided inside an outer frame.
A large number of leads, consisting of first and second lead groups formed in
A pair of joints projecting from the card and outer frame in the same plane as this
And a lead at the tip of each lead group.
Remove the ear bonding area and the tip area of the bonding lead.
Includes adhesive on one side only, including the back side
Insulating tape with a through hole through which the electrode pad is exposed
It is specially characterized that they are attached and connected integrally.
2. The semiconductor device according to claim 1, wherein:
JP4357133A 1992-12-21 1992-12-21 Semiconductor device Expired - Fee Related JP2799808B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4357133A JP2799808B2 (en) 1992-12-21 1992-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4357133A JP2799808B2 (en) 1992-12-21 1992-12-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPH06188353A JPH06188353A (en) 1994-07-08
JP2799808B2 true JP2799808B2 (en) 1998-09-21

Family

ID=18452553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4357133A Expired - Fee Related JP2799808B2 (en) 1992-12-21 1992-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2799808B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002176130A (en) 2000-12-08 2002-06-21 Mitsubishi Electric Corp Sealed semiconductor device and lead frame used therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127756A (en) * 1976-04-19 1977-10-26 Nec Corp Semiconductor unit

Also Published As

Publication number Publication date
JPH06188353A (en) 1994-07-08

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