JP2954066B2 - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JP2954066B2 JP2954066B2 JP6054997A JP6054997A JP2954066B2 JP 2954066 B2 JP2954066 B2 JP 2954066B2 JP 6054997 A JP6054997 A JP 6054997A JP 6054997 A JP6054997 A JP 6054997A JP 2954066 B2 JP2954066 B2 JP 2954066B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- wire
- inner lead
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明はリードフレーム及び
樹脂封止型半導体装置に関する。The present invention relates to a lead frame and a resin-sealed semiconductor device.
【０００２】[0002]
【従来の技術】一般に樹脂封止型半導体装置は、図２
（ａ），（ｂ）に示すように、リードフレームのアイラ
ンド１に半導体ペレット３を固着した後、アイランド１
の周囲に設けられ、アウターリードと一体的に形成され
たインナーリード２の先端と半導体ペレット３の表面に
形成されたボンデング用のパッド６とを金属製のワイヤ
ー７で接続した後、主にアイランド１と半導体ペレット
３とワイヤー７とインナーリード２とを樹脂（図示せ
ず）で封止した構造となっている。インナーリード２の
先端は金属メッキが施されている。尚、図２において、
８は吊りリードである。2. Description of the Related Art In general, a resin-encapsulated semiconductor device is shown in FIG.
As shown in (a) and (b), after the semiconductor pellet 3 is fixed to the island 1 of the lead frame,
After connecting the tip of the inner lead 2 formed integrally with the outer lead and the bonding pad 6 formed on the surface of the semiconductor pellet 3 by a metal wire 7, the 1, a semiconductor pellet 3, a wire 7, and an inner lead 2 are sealed with a resin (not shown). The tip of the inner lead 2 is plated with metal. In FIG. 2,
8 is a suspension lead.
【０００３】近年の半導体装置の多ピン化、ファインピ
ッチ化に伴い、リードフレームのインナーリードの精度
の高い変形防止が要求されてきている。With the recent increase in the number of pins and the fine pitch of semiconductor devices, there has been a demand for highly accurate deformation prevention of inner leads of lead frames.
【０００４】この変形防止の対策として、例えば特開平
２−９４５５２号公報に、インナーリード先端付近を一
体的に繋ぐ連結片を残した状態で成型し、インナーリー
ド先端付近で隣接リード間を熱硬化性樹脂で固定した
後、連結片を取り除きインナーリードの先端を解放する
とい方法が記載されている。As a measure for preventing this deformation, for example, Japanese Patent Laid-Open No. 2-94552 discloses a method in which a connecting piece for integrally connecting the vicinity of the tip of the inner lead is left, and thermosetting is performed between adjacent leads near the tip of the inner lead. A method is described in which after fixing with a conductive resin, the connecting piece is removed and the tip of the inner lead is released.
【０００５】又、半導体ペレットの表面を保護するため
に、ポリイミド膜が主に用いられている。In order to protect the surface of the semiconductor pellet, a polyimide film is mainly used.
【０００６】[0006]
【発明が解決しようとする課題】第１の問題点は、連結
片を用いる従来の方法でも、インナーリードのボンデン
グ部の変形でワイヤリングが出来ない場合が生じる事で
ある。その理由は、連結片の解除後に搬送やリードフレ
ーム同士の接触等によりリードフレームの先端が変形す
るからである。The first problem is that even in the conventional method using the connecting piece, there is a case where wiring cannot be performed due to deformation of the bonding portion of the inner lead. The reason is that the leading end of the lead frame is deformed due to conveyance, contact between lead frames, or the like after the connection piece is released.
【０００７】第２の問題点は、ポリイミド膜を保護膜と
して用いた場合、工程が複雑になりコストが高くなるこ
とである。その理由は、ポリイミド膜を塗布法により形
成した後、ワイヤーを接続するパッド部上のポリイミド
膜を、ドライエッチングにより取り除かなければならな
いからである。A second problem is that when a polyimide film is used as a protective film, the process becomes complicated and the cost increases. The reason is that, after the polyimide film is formed by the coating method, the polyimide film on the pad portion for connecting the wires must be removed by dry etching.
【０００８】本発明の目的はインナーリードの変形が生
じることのないリードフレーム及び半導体ペレット上の
保護膜をエッチングする必要がなく、コストの低減され
た樹脂封止型半導体装置を提供する事にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin-encapsulated semiconductor device which does not require deformation of a lead frame and a protective film on a semiconductor pellet which does not cause deformation of inner leads and which has a reduced cost. .
【０００９】[0009]
【課題を解決するための手段】 本発明の樹脂封止型半
導体装置は、リードフレームのアイランド上に固定され
た半導体ペレットと、この半導体ペレットの表面に形成
された圧電性樹脂膜と、アイランドの周囲に設けられた
インナーリードと、このインナーリードの先端上に設け
られインナーリード同士を固定する為の圧電性樹脂膜か
らなるテープと、半導体ペレットの表面に形成されたパ
ッドとインナーリードの先端とを圧電性樹脂膜を介して
接続するワイヤーとを含むことを特徴とする。According to the present invention, there is provided a resin-encapsulated semiconductor device comprising: a semiconductor pellet fixed on an island of a lead frame; a piezoelectric resin film formed on a surface of the semiconductor pellet; Inner leads provided on the periphery, a tape made of a piezoelectric resin film provided on the tips of the inner leads for fixing the inner leads to each other, and a pad formed on the surface of the semiconductor pellet and the tips of the inner leads. And a wire for connecting the same via a piezoelectric resin film.
【００１０】[0010]
【００１１】[0011]
【００１２】[0012]
【作用】本願発明においては、ワイヤーを接続するパッ
ド及びインナーリードの部分に圧電性樹脂膜を設ける。
圧電性樹脂膜は、絶縁性の樹脂の中に銀等の粒子を疎に
含むものであり、加圧前は粒子が疎であるため導電性は
無いが、加圧後は粒子が密となる為加圧部は導電性を持
つ様になる。従って、インナーリードとパッドとの接続
をこの圧電性樹脂膜を介して行う事が出来る。According to the present invention, a piezoelectric resin film is provided on the pad for connecting wires and the inner lead.
Piezoelectric resin film is a material that sparsely contains particles such as silver in an insulating resin, and has no conductivity because the particles are sparse before pressing, but the particles are dense after pressing. Therefore, the pressurizing portion becomes conductive. Therefore, the connection between the inner lead and the pad can be made via this piezoelectric resin film.
【００１３】[0013]
【発明の実施の形態】次に、本発明について図面を参照
して説明する。Next, the present invention will be described with reference to the drawings.
【００１４】図１（ａ），（ｂ）は、本発明の実施の形
態を説明するための樹脂封止型半導体装置の平面図及び
Ａ−Ａ線断面図であり、封止樹脂を除いた場合を示して
いる。FIGS. 1A and 1B are a plan view and a cross-sectional view taken along the line AA of a resin-sealed semiconductor device for explaining an embodiment of the present invention, wherein a sealing resin is removed. Shows the case.
【００１５】図１を参照すると、本実施の形態における
リードフレームは、半導体ペレットを固定するアイラン
ド１と、このアイランド１の周囲に設けられたインナー
リード２と、このインナーリード２の先端を固定するた
めの圧電性樹脂膜４Ｂからなるテープとから主に構成さ
れている。Referring to FIG. 1, a lead frame according to the present embodiment fixes an island 1 for fixing a semiconductor pellet, an inner lead 2 provided around the island 1, and a tip of the inner lead 2. And a tape made of a piezoelectric resin film 4B.
【００１６】そして、このリードフレームを用いて形成
される樹脂封止型半導体装置は、リードフレームのアイ
ランド１上に固定された半導体ペレット３と、この半導
体ペレット３の表面に形成された圧電性樹脂膜４Ａと、
このアイランド１の周囲に設けられたインナーリード２
と、このインナーリード２の先端上に設けられインナー
リード同士を固定する為の圧電性樹脂膜４Ｂからなるテ
ープと、前記半導体ペレット３の表面に形成されたパッ
ド６とインナーリード２の先端とを圧電性樹脂膜４Ａ、
４Ｂとを介して接続するワイヤー５とから主に構成され
ている。樹脂封止型半導体装置を完成させるためには、
アイランド１、半導体ペレット３、ワイヤー５及びイン
ナーリード２を樹脂で封止する。The resin-encapsulated semiconductor device formed using the lead frame includes a semiconductor pellet 3 fixed on the island 1 of the lead frame and a piezoelectric resin formed on the surface of the semiconductor pellet 3. A membrane 4A;
Inner lead 2 provided around this island 1
And a tape formed on the tip of the inner lead 2 and made of a piezoelectric resin film 4B for fixing the inner leads to each other, and a pad 6 formed on the surface of the semiconductor pellet 3 and the tip of the inner lead 2. Piezoelectric resin film 4A,
4B and a wire 5 connected through the wire 5B. To complete a resin-encapsulated semiconductor device,
The island 1, the semiconductor pellet 3, the wire 5, and the inner lead 2 are sealed with a resin.
【００１７】ワイヤー５としては、金等の金属線や導電
性樹脂膜からなる細線を用いる。導電性樹脂としては、
例えば、カーボンや銀等の混入樹脂、テトラシアノキノ
ジメタン、高エネルギー粒子で処理しアモロフアスカー
ボン状態としたポリイミドなどを用いることが出来る。
導電性樹脂膜からなる細線としては、導電性樹脂フイル
ムを２０〜５０μｍ幅に切断し、断面形状が矩形のもの
とするか、ダイスを用いて引き抜きワイヤー状としたも
のを用いる。As the wire 5, a metal wire such as gold or a thin wire made of a conductive resin film is used. As the conductive resin,
For example, a resin mixed with carbon, silver, or the like, tetracyanoquinodimethane, polyimide treated with high-energy particles to be in an amorphous carbon state, or the like can be used.
As the fine wire made of the conductive resin film, a conductive resin film cut into a width of 20 to 50 μm and having a rectangular cross section or a wire drawn by using a die is used.
【００１８】この様に構成されたリードフレームによれ
ば、インナーリード２の先端が圧電性樹脂膜４Ｂにより
固定されているため、先端が変形する事はなくなる。ま
た、実施の形態の樹脂封止型半導体装置によれば、ワイ
ヤーは圧電性樹脂膜を介して接続されるため、従来のよ
うにパッド上の保護膜をエッチングする必要が無くなる
為、製造コストを低減する事が出来る。According to the lead frame configured as described above, since the tip of the inner lead 2 is fixed by the piezoelectric resin film 4B, the tip does not deform. Further, according to the resin-encapsulated semiconductor device of the embodiment, since the wires are connected via the piezoelectric resin film, there is no need to etch the protective film on the pad as in the conventional case, so that the manufacturing cost is reduced Can be reduced.
【００１９】[0019]
【発明の効果】第１の効果は、インナーリードの先端の
変形が無くなり、ボンデング部の位置精度が向上するこ
とである。その理由は、インナーリードの先端のボンデ
ング部を圧電性樹脂膜で固定しているからである。The first effect is that deformation of the tip of the inner lead is eliminated, and the positional accuracy of the bonding portion is improved. The reason is that the bonding portion at the tip of the inner lead is fixed with a piezoelectric resin film.
【００２０】第２の効果は、ワイヤリングを施す半導体
ペレットのパッド部の保護膜を取り除くこと無くワイヤ
リングが可能であるため、コストを低減出来ることであ
る。その理由は、保護膜として圧電性樹脂膜を用いてい
るため、パッドとワイヤーを圧電性樹脂膜を介してボン
デング出来るからである。The second effect is that the wiring can be performed without removing the protective film of the pad portion of the semiconductor pellet to be wired, so that the cost can be reduced. The reason is that since the piezoelectric resin film is used as the protective film, the pad and the wire can be bonded via the piezoelectric resin film.
【図１】本発明のの第１の実施形態を説明するための樹
脂封止型半導体装置の平面図及び断面図。FIG. 1 is a plan view and a cross-sectional view of a resin-sealed semiconductor device for describing a first embodiment of the present invention.
【図２】従来の樹脂封止型半導体装置を説明するための
樹脂封止型半導体装置の平面図及び断面図。2A and 2B are a plan view and a cross-sectional view of a resin-encapsulated semiconductor device for describing a conventional resin-encapsulated semiconductor device.
１ アイランド ２ インナーリード ３ 半導体ペレット ４Ａ、４Ｂ 圧電性樹脂膜 ５ ワイヤー ６ パッド ７ ワイヤー ８ 吊りリード DESCRIPTION OF SYMBOLS 1 Island 2 Inner lead 3 Semiconductor pellet 4A, 4B Piezoelectric resin film 5 Wire 6 Pad 7 Wire 8 Hanging lead
Claims (3)
れた半導体ペレットと、この半導体ペレットの表面に形
成された圧電性樹脂膜と、前記アイランドの周囲に設け
られたインナーリードと、このインナーリードの先端上
に設けられインナーリード同士を固定する為の圧電性樹
脂膜からなるテープと、前記半導体ペレットの表面に形
成されたパッドと前記インナーリードの先端とを前記圧
電性樹脂膜を介して接続するワイヤーとを含むことを特
徴とする樹脂封止型半導体装置。1. A semiconductor pellet fixed on an island of a lead frame, a piezoelectric resin film formed on a surface of the semiconductor pellet, an inner lead provided around the island, and a tip of the inner lead. A tape made of a piezoelectric resin film for fixing the inner leads to each other, and a wire for connecting a pad formed on the surface of the semiconductor pellet and the tip of the inner lead via the piezoelectric resin film; And a resin-encapsulated semiconductor device.
される請求項１記載の樹脂封止型半導体装置。2. A wire resin-sealed semiconductor device according to claim 1, wherein comprised of a metal or a conductive resin.
面が矩形状である求項２記載の樹脂封止型半導体装置。3. The resin-sealed semiconductor device according to claim 2 , wherein the wire made of a conductive resin has a rectangular cross section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6054997A JP2954066B2 (en) | 1997-03-14 | 1997-03-14 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6054997A JP2954066B2 (en) | 1997-03-14 | 1997-03-14 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10256461A JPH10256461A (en) | 1998-09-25 |
| JP2954066B2 true JP2954066B2 (en) | 1999-09-27 |
Family
ID=13145491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6054997A Expired - Fee Related JP2954066B2 (en) | 1997-03-14 | 1997-03-14 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2954066B2 (en) |
-
1997
- 1997-03-14 JP JP6054997A patent/JP2954066B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10256461A (en) | 1998-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |