JP2716405B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- JP2716405B2 JP2716405B2 JP7181364A JP18136495A JP2716405B2 JP 2716405 B2 JP2716405 B2 JP 2716405B2 JP 7181364 A JP7181364 A JP 7181364A JP 18136495 A JP18136495 A JP 18136495A JP 2716405 B2 JP2716405 B2 JP 2716405B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- pellet
- pellets
- semiconductor device
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Description
【０００１】[0001]
【発明の属する技術分野】本発明は樹脂封止型の半導体
装置およびその製造方法に関し、特に複数の半導体ペレ
ットをリードフレームに搭載する構造およびその搭載方
法に関する。The present invention relates to a resin-sealed semiconductor device and a method of manufacturing the same, and more particularly to a structure for mounting a plurality of semiconductor pellets on a lead frame and a method of mounting the same.
【０００２】[0002]
【従来の技術】従来、容量の大きな半導体装置を提供し
たり、あるいは半導体装置を用いた機器の実装面積を向
上させるために、複数の半導体ペレットを１つの樹脂封
止型装置に搭載することが行われている。2. Description of the Related Art Conventionally, in order to provide a semiconductor device having a large capacity or to increase a mounting area of a device using the semiconductor device, a plurality of semiconductor pellets are mounted on one resin-sealed type device. Is being done.
【０００３】例えば、複数の半導体ペレットを１つのリ
ードフレームに搭載する技術としては、特開昭６０−９
５９５８号公報や特開平２−８７６６１号公報に記載さ
れるものがある。For example, as a technique for mounting a plurality of semiconductor pellets on one lead frame, Japanese Patent Application Laid-Open No.
There are those described in 5958 and JP-A-2-87661.
【０００４】図８はかかる従来の一例を示す半導体装置
の縦断面図である。図８に示すように、従来の半導体装
置は、テープ１２ａ上のリードフレームのアイランド１
３ａに第１のペレット１４ａをダイボンディングし、ボ
ンディングワイヤ１５ａにより内部リード１６ａと第１
のペレット１４ａ間を接続する。同様に、テープ１２ｂ
上のリードフレームのアイランド１３ｂに第２のペレッ
ト１４ｂをダイボンディングし、ボンディングワイヤ１
５ｂにより内部リード１６ｂと第２のペレット１４ｂ間
を接続する。つぎに、これら第１，第２のペレット１４
ａ，１４ｂを搭載したテープ１２ａ，１２ｂの非マウン
ト面を接着材１９により貼合わせる。しかる後、貼合わ
せた全体をモールド樹脂１７で封止し、内部リード１６
ａ，１６ｂに続く外部リード１８ａ，１８ｂを所定の長
さに切断して成型する。FIG. 8 is a longitudinal sectional view of a semiconductor device showing an example of such a conventional device. As shown in FIG. 8, the conventional semiconductor device has a lead frame island 1 on a tape 12a.
A first pellet 14a is die-bonded to the inner lead 16a and the first lead 14a by a bonding wire 15a.
Are connected between the pellets 14a. Similarly, the tape 12b
The second pellet 14b is die-bonded to the island 13b of the upper lead frame to form a bonding wire 1
5b connects between the internal lead 16b and the second pellet 14b. Next, these first and second pellets 14
The non-mounting surfaces of the tapes 12a and 12b on which the tapes a and 14b are mounted are attached with an adhesive 19. Thereafter, the whole bonded body is sealed with a mold resin 17 and the internal leads 16 are formed.
The external leads 18a and 18b subsequent to a and 16b are cut to a predetermined length and molded.
【０００５】図９は従来の他の例を示す半導体装置の縦
断面図である。図９に示すように、この半導体装置は、
第１のペレット２０ａと第２のペレット２０ｂをリード
フレームのアイランド２１の両主面にダイボンディング
し、ボンディングパッド２３と外部接続端子２５間をボ
ンディングワイヤ２４により接続する。その後、前述し
た従来例と同様に、全体をモールド樹脂２２により封止
する。この場合は、アイランド２１を介して第１，第２
のペレット２０ａ，２０ｂを背中合わせに接着すること
により実装密度を上げ、半導体装置の小型化を実現して
いる。FIG. 9 is a longitudinal sectional view of a semiconductor device showing another conventional example. As shown in FIG.
The first pellet 20a and the second pellet 20b are die-bonded to both main surfaces of the island 21 of the lead frame, and the bonding pad 23 and the external connection terminal 25 are connected by the bonding wire 24. Thereafter, as in the conventional example described above, the whole is sealed with the mold resin 22. In this case, the first and second
By bonding the pellets 20a and 20b back to back, the mounting density is increased and the size of the semiconductor device is reduced.
【０００６】[0006]
【発明が解決しようとする課題】上述した従来の半導体
装置およびその製造方法は、２つのアイランドの背面を
貼合わせるか、あるいは１つのアイランドを介して２つ
のペレットをの背面を貼合わせる構造および方法である
ため、２つのペレット上のパッド面が互いに反対方向を
向くことになる。このように、パッド面が互いに反対方
向を向いた複数のペレット間のワイヤボンディングを実
施するには、リードフレームの向きを変える工程が必要
になり、その際にワイヤ変形や切断の危険が伴なうとい
う欠点がある。The above-described conventional semiconductor device and the method of manufacturing the same have a structure and a method of bonding the back surfaces of two islands or bonding the back surfaces of two pellets via one island. Therefore, the pad surfaces on the two pellets face in opposite directions. As described above, in order to perform wire bonding between a plurality of pellets whose pad surfaces face in opposite directions, a step of changing the direction of the lead frame is required, and at this time, there is a risk of wire deformation and cutting. Disadvantage.
【０００７】現在、一般的に使用されているワイヤーボ
ンダにおいては、リードフレーム片面のみのボンディン
グしか行えず、１ワイヤでのペレット間ワイヤボンディ
ングは、物理的に不可能である。At present, generally used wire bonders can only perform bonding on one side of a lead frame, and it is physically impossible to perform wire bonding between pellets with one wire.
【０００８】さらに、図８に示した従来例においては、
リードフレーム（テープ）を２枚貼合わす工程が必要に
なるとともに、リード部分が２倍の厚さになるので、半
導体装置の薄型化を実現しにくいという欠点がある。Further, in the conventional example shown in FIG.
There is a disadvantage in that a step of bonding two lead frames (tapes) is required and the lead portion becomes twice as thick, so that it is difficult to realize a thin semiconductor device.
【０００９】また、図９に示した従来例においては、２
つのペレットをアイランドにダイボンディングする際
と、アイランド両面にダイボンディングしたペレットの
パッドおよび外部接続端子間を接続する際とに、リード
フレームを裏返えす等の新たな工程が必要になり、その
分組立時間が増加したり、製造コストが高くなってしま
うという欠点がある。しかも、リードフレームのアイラ
ンドの両面にワイヤボンディングするため、特殊なワイ
ヤボンディング装置を必要とするといった問題点もあ
る。In the conventional example shown in FIG.
When die-bonding two pellets to the island and when connecting the pads and external connection terminals of the die-bonded pellet to both sides of the island, a new process such as turning over the lead frame is required, and assembling is necessary. There are drawbacks such as an increase in time and an increase in manufacturing cost. In addition, there is also a problem that a special wire bonding apparatus is required because wire bonding is performed on both sides of the island of the lead frame.
【００１０】本発明の目的は、かかる内部ペレット間の
ワイヤボンディング接続を可能にするとともに、工程数
などを削減し、製造コストの安い半導体装置及びその製
造方法を提供することにある。An object of the present invention is to provide a semiconductor device and a method of manufacturing the same, which enable wire bonding connection between the internal pellets, reduce the number of steps and the like, and are inexpensive to manufacture.
【００１１】[0011]
【課題を解決するための手段】本発明の半導体装置は、
リードフレームのアイランドもしくはリード部の両面に
且つパッド部が同一方向を向くようにダイボンディング
した第１および第２の半導体ペレットと、前記第１およ
び第２の半導体ペレットの前記パッド部相互間あるいは
前記第１および第２の半導体ペレットの前記パッド部と
外部接続端子間を電気的に接続するボンディングワイヤ
とを有し、前記第１および第２の半導体ペレットを含む
全体を樹脂などで封止して構成される。According to the present invention, there is provided a semiconductor device comprising:
First and second semiconductor pellets die-bonded to both sides of an island or a lead portion of a lead frame so that the pad portions face in the same direction; and between the pad portions of the first and second semiconductor pellets or between the pad portions. A bonding wire for electrically connecting the pad portion of the first and second semiconductor pellets to an external connection terminal; and sealing the entirety including the first and second semiconductor pellets with resin or the like. Be composed.
【００１２】また、本発明の半導体装置における前記第
１および第２の半導体ペレットは、上側に搭載する第１
の半導体ペレットに対し、下側に搭載する第２の半導体
ペレットの幅を広く形成するとともに、前記第２の半導
体ペレットのパッド部が前記外部接続端子に隠されるこ
とがないように配置する。Further, in the semiconductor device of the present invention, the first and second semiconductor pellets are mounted on an upper side of a first semiconductor pellet.
The width of the second semiconductor pellet mounted on the lower side is formed wider than that of the semiconductor pellet, and the pad portion of the second semiconductor pellet is arranged so as not to be hidden by the external connection terminal.
【００１３】また、本発明の半導体装置における前記第
１の半導体ペレットは、その上面にさらに幅の狭い第３
の半導体ペレットを搭載し且つそのパッド部が前記第１
および第２の半導体ペレットと同一方向を向くように形
成してもよい。Further, the first semiconductor pellet in the semiconductor device of the present invention has a third narrower surface on its upper surface.
The semiconductor pellet is mounted, and its pad portion is the first
And the second semiconductor pellet may be formed in the same direction.
【００１４】さらに、本発明の半導体装置における前記
第１および第２の半導体ペレットは、同一サイズにし且
つずらせて前記アイランドもしくは前記リード部に搭載
するとともに、前記第２の半導体ペレットは、片側のみ
に前記パッド部を形成し、前記第１の半導体ペレットの
前記パッド部あるいは前記外部接続端子と片側のみでボ
ンディング接続してもよい。Further, in the semiconductor device of the present invention, the first and second semiconductor pellets are mounted on the island or the lead portion with the same size and shifted, and the second semiconductor pellet is disposed only on one side. The pad portion may be formed and bonded to the pad portion or the external connection terminal of the first semiconductor pellet only on one side.
【００１５】一方、本発明の半導体装置の製造方法は、
複数の半導体ペレットをリードフレームにダイボンディ
ングし、前記複数の半導体ペレットを含む全体を樹脂な
どで封止する半導体装置の製造方法において、パッド部
を上面に形成した第１の半導体ペレットをリードフレー
ムの１つの面にダイボンディングする工程と、パッド部
を上面に形成した第２の半導体ペレットをリードフレー
ムの前記１つの面とは反対の面にダイボンディングする
工程と、前記第１および第２の半導体ペレットの前記パ
ッド部相互間あるいは前記第１の半導体ペレットの前記
パッド部と外部接続端子または前記第２の半導体ペレッ
トの前記パッド部と前記外部接続端子間をボンディング
ワイヤにより接続する工程と、前記第１および第２の半
導体ペレットを樹脂などで封止する工程とを含んで構成
される。On the other hand, a method of manufacturing a semiconductor device according to the present invention
In a method of manufacturing a semiconductor device in which a plurality of semiconductor pellets are die-bonded to a lead frame and the whole including the plurality of semiconductor pellets is sealed with a resin or the like, a first semiconductor pellet having a pad portion formed on an upper surface is formed on a lead frame. A step of die bonding to one surface, a step of die bonding a second semiconductor pellet having a pad portion formed on the upper surface thereof to a surface of the lead frame opposite to the one surface, and the first and second semiconductors. Connecting between the pad portions of the pellets or between the pad portions of the first semiconductor pellet and external connection terminals or between the pad portions of the second semiconductor pellet and the external connection terminals by bonding wires; Sealing the first and second semiconductor pellets with a resin or the like.
【００１６】[0016]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【００１７】図１は本発明の半導体装置の第１の実施の
形態を示す装置の縦断面図である。図１に示すように、
この実施の形態による半導体装置は、リードフレームの
アイランド３の表面にボンディングパッド部６ａが上を
向くようにダイボンディングした第１の半導体ペレット
１ａと、同様にリードフレームのアイランド３の裏面お
よび外部接続端子８ａの一部にボンディングパッド部７
ａが上を向くようにダイボンディングした第２の半導体
ペレット２ａと、第１，第２の半導体ペレット１ａ，２
ａのパッド部６ａ，７ａ相互間あるいは第１，第２の半
導体ペレット１ａ，２ａのパッド部６ａ，７ａと外部接
続端子８ａ間を電気的に接続するボンディングワイヤ９
ａとを有する。これら第１，第２の半導体ペレット１
ａ，２ａは、共にパッド部６ａ，７ａが同一方向を向く
ように接着テープ４ａ（銀ペーストでも可）を用いてア
イランド３の両面に搭載される。しかも、これらの第
１，第２の半導体ペレット１ａ，２ａを含む全体は、モ
ールド樹脂５ａにより封止される。FIG. 1 is a longitudinal sectional view of a semiconductor device according to a first embodiment of the present invention. As shown in FIG.
In the semiconductor device according to this embodiment, the first semiconductor pellet 1a die-bonded to the surface of the island 3 of the lead frame so that the bonding pad 6a faces upward, the back surface of the island 3 of the lead frame and the external connection A bonding pad portion 7 is provided on a part of the terminal 8a.
a second semiconductor pellet 2a die-bonded such that a faces upward, and first and second semiconductor pellets 1a and 2a.
a bonding wires 9 for electrically connecting between the pad portions 6a, 7a or between the pad portions 6a, 7a of the first and second semiconductor pellets 1a, 2a and the external connection terminals 8a.
a. These first and second semiconductor pellets 1
Both a and 2a are mounted on both sides of the island 3 using an adhesive tape 4a (a silver paste is also acceptable) so that the pad portions 6a and 7a are directed in the same direction. Moreover, the entirety including the first and second semiconductor pellets 1a and 2a is sealed with the mold resin 5a.
【００１８】また、第１，第２の半導体ペレット１ａ，
２ａは、上側に搭載される第１の半導体ペレット１ａに
対し、下側に搭載する第２の半導体ペレット２ａの幅を
広く形成するとともに、この第２の半導体ペレット２ａ
のパッド部７ａが外部接続端子８ａに隠されることがな
いように配置する。The first and second semiconductor pellets 1a,
2a, the width of the second semiconductor pellet 2a mounted on the lower side is formed wider than that of the first semiconductor pellet 1a mounted on the upper side.
Are arranged not to be hidden by the external connection terminals 8a.
【００１９】このように、第１の半導体ペレット１ａの
パッド部６ａと第２の半導体ペレット２ａのパッド部７
ａは、同一方向にダイボンディングされ且つ第２の半導
体ペレット２ａの幅を大きく形成しているため、リード
フレームを裏返すことなく、１本のボンディングワイヤ
９ａにより、直接両ペレット間のパッド接続を実現する
ことができる。As described above, the pad portion 6a of the first semiconductor pellet 1a and the pad portion 7 of the second semiconductor pellet 2a
Since a is die-bonded in the same direction and the width of the second semiconductor pellet 2a is formed to be large, the pad connection between the two pellets is realized directly by one bonding wire 9a without turning over the lead frame. can do.
【００２０】図２は図１における半導体装置の主要部の
拡大斜視図である。図２に示すように、２つのペレット
１ａ，２ａの位置関係は、つぎのとおりである。すなわ
ち、アイランド３の上面にダイボンディングされたペレ
ット１ａのパッド部６ａはペレット１ａの表面のどこに
あっても構わないのに対し、外部接続端子８ａの一部に
接着テープ４ａによりダイボンディングされたペレット
２ａの電気的接続が必要なパッド部７ａは、ペレット１
ａ，接着テープ４ａ，外部接続端子８ａに隠されること
のないような位置に配置する必要がある。FIG. 2 is an enlarged perspective view of a main part of the semiconductor device in FIG. As shown in FIG. 2, the positional relationship between the two pellets 1a and 2a is as follows. That is, while the pad portion 6a of the pellet 1a die-bonded to the upper surface of the island 3 may be located anywhere on the surface of the pellet 1a, the pellet die-bonded to a part of the external connection terminal 8a by the adhesive tape 4a. The pad portion 7a which needs electrical connection 2a is the pellet 1
a, the adhesive tape 4a, and the external connection terminal 8a.
【００２１】図３は本発明の半導体装置の第２の実施の
形態を示す装置の縦断面図である。図３に示すように、
この実施の形態による半導体装置は、第１，第２の半導
体ペレット１ｂ，２ｂのサイズが同一もしくは近い大き
さの場合である。このときの第１の半導体ペレット１ｂ
は、ボンディングパッド部６ｂが上を向くように、接着
テープ１０を用いて外部接続端子８ｂの表面にダイボン
ディングされ、また第２の半導体ペレット２ｂは、ボン
ディングパッド部７ｂが上を向くように、接着テープ４
ｂを用いて外部接続端子８ｂの裏面にダイボンディング
される。さらに、ボンディングワイヤ９ｂで第１の半導
体ペレット１ｂのパッド６ｂと外部接続端子８ｂ、およ
び第２の半導体ペレット２ｂのパッド７ｂと外部接続端
子８ｂ間などを接続した後、全体をモールド樹脂５ｂで
封止される。FIG. 3 is a longitudinal sectional view of a semiconductor device according to a second embodiment of the present invention. As shown in FIG.
The semiconductor device according to this embodiment is a case where the first and second semiconductor pellets 1b and 2b have the same or similar sizes. At this time, the first semiconductor pellet 1b
Is die-bonded to the surface of the external connection terminal 8b using the adhesive tape 10 so that the bonding pad portion 6b faces upward, and the second semiconductor pellet 2b is bonded so that the bonding pad portion 7b faces upward. Adhesive tape 4
b is die-bonded to the back surface of the external connection terminal 8b. Further, after the pad 6b of the first semiconductor pellet 1b and the external connection terminal 8b and the pad 7b of the second semiconductor pellet 2b and the external connection terminal 8b are connected with the bonding wire 9b, the whole is sealed with the mold resin 5b. Is stopped.
【００２２】また、これら第１および第２の半導体ペレ
ット１ｂ，２ｂは、同一サイズにした場合、ずらせてア
イランドもしくはリード部に搭載するため、第２の半導
体ペレット２ｂは、片側のみにパッド部７ｂを形成し、
第１の半導体ペレット１ｂのパッド部６ｂあるいは外部
接続端子８ｂと片側のみでボンディング接続することに
なる。When the first and second semiconductor pellets 1b and 2b are of the same size, they are shifted and mounted on the island or the lead portion. Therefore, the second semiconductor pellet 2b has a pad portion 7b on only one side. To form
Bonding connection is made only on one side to the pad portion 6b or the external connection terminal 8b of the first semiconductor pellet 1b.
【００２３】この実施の形態も、両ペレット１ｂ，２ｂ
のパッド部６ｂ，７ｂは、同一方向に形成されているた
め、リードフレームを裏返すことなく、１本のボンディ
ングワイヤ９ｂにより、直接両ペレット間のパッド接続
を実現することができる。In this embodiment, both pellets 1b, 2b
Since the pad portions 6b and 7b are formed in the same direction, the pad connection between both pellets can be realized directly by one bonding wire 9b without turning over the lead frame.
【００２４】図４は図３における半導体装置の主要部の
拡大斜視図である。図４に示すように、２つのペレット
１ｂ，２ｂの位置関係は、外部接続端子８ｂの上面にダ
イボンディングされたペレット１ｂのパッド部６ｂはペ
レット１ｂの表面のどこにあっても構わないのに対し、
外部接続端子８ｂに接着テープ４ｂによりダイボンディ
ングされたペレット２ａの電気的接続が必要なパッド部
７ｂは、ペレット１ｂ，接着テープ４ｂ，外部接続端子
８ｂに隠されることのないような位置に配置する必要が
ある。FIG. 4 is an enlarged perspective view of a main part of the semiconductor device in FIG. As shown in FIG. 4, the positional relationship between the two pellets 1b, 2b is such that the pad portion 6b of the pellet 1b die-bonded to the upper surface of the external connection terminal 8b may be located anywhere on the surface of the pellet 1b. ,
The pad portion 7b which needs to be electrically connected to the pellet 2a die-bonded to the external connection terminal 8b by the adhesive tape 4b is arranged at a position where it is not hidden by the pellet 1b, the adhesive tape 4b and the external connection terminal 8b. There is a need.
【００２５】図５は本発明の半導体装置の第３の実施の
形態を示す装置の縦断面図である。図５に示すように、
この実施の形態による半導体装置は、３つのペレット１
ａ，２ａ，１１を積層した構造である。すなわち、第１
の半導体ペレット１ａの上面にさらに幅の狭い第３の半
導体ペレット１１を接着テープ４ａを用いて搭載し、し
かもそのパッド部が第１，第２の半導体ペレット１ａ，
２ａと同一方向を向くように形成したものである。な
お、かかる積層構造は３層以上の構造としてもよい。FIG. 5 is a longitudinal sectional view of a semiconductor device according to a third embodiment of the present invention. As shown in FIG.
The semiconductor device according to this embodiment has three pellets 1.
a, 2a, and 11 are laminated. That is, the first
A third semiconductor pellet 11 having a smaller width is mounted on the upper surface of the semiconductor pellet 1a by using an adhesive tape 4a, and its pad portion has a first and a second semiconductor pellet 1a.
It is formed so as to face the same direction as 2a. Note that such a laminated structure may be a structure having three or more layers.
【００２６】このような構造とすることにより、隠ペレ
ットのパッド部が同一方向にダイボンディングされ、上
に行くに連れて半導体ペレットの幅を小きく形成してい
るため、リードフレームを裏返すことなく、１本のボン
ディングワイヤ９ａにより、直接ペレット間のパッド接
続を実現することができる。With such a structure, the pad portion of the hidden pellet is die-bonded in the same direction, and the width of the semiconductor pellet is reduced toward the top, so that the lead frame is not turned over. The pad connection between the pellets can be directly realized by one bonding wire 9a.
【００２７】上述した３つの実施の形態におけるアイラ
ンド３と第１の半導体ペレット１ａ、外部接続端子８ａ
と第２の半導体ペレット２ａなどをダイボンディングす
るための接着材としては、エポキシ系接着材，ポリイミ
ド系接着材，シリコン系接着材またはポリイミド系両面
テープおよび銀ペーストなどを用いることができる。ま
た、封止手段としては、樹脂モールドを用いたが、樹脂
のかわりに、セラミックパッケージやサーディップタイ
プのパッケージなどの封止手段を用いてもよい。The island 3, the first semiconductor pellet 1a, and the external connection terminal 8a in the three embodiments described above.
As an adhesive for die-bonding the second semiconductor pellet 2a and the like, an epoxy-based adhesive, a polyimide-based adhesive, a silicon-based adhesive, a polyimide-based double-sided tape, a silver paste, or the like can be used. Although a resin mold is used as the sealing means, a sealing means such as a ceramic package or a cerdip type package may be used instead of the resin.
【００２８】図６（ａ）〜（ｅ）はそれぞれ本発明の半
導体装置の製造方法の第１の実施の形態を説明するため
の工程順に示した装置の縦断面図である。この実施の形
態による半導体装置の製造方法は、前述した図１および
図２に示す半導体装置を製造する方法である。FIGS. 6A to 6E are longitudinal sectional views of a device shown in the order of steps for explaining the first embodiment of the method of manufacturing a semiconductor device according to the present invention. The method of manufacturing a semiconductor device according to the present embodiment is a method of manufacturing the semiconductor device shown in FIGS.
【００２９】まず、図６（ａ）に示すように、リードフ
レーム１２ａのアイランド３やリード部に両面の接着テ
ープ４ａを被着する。この接着テープ４ａは始めからリ
ードフレーム１２ａに付着したものを用いてもよい。First, as shown in FIG. 6A, the double-sided adhesive tape 4a is applied to the island 3 and the lead portion of the lead frame 12a. As the adhesive tape 4a, a tape attached to the lead frame 12a from the beginning may be used.
【００３０】ついで、図６（ｂ）に示すように、リード
フレーム１２ａの下面にパッド部を上面に形成した半導
体ペレット２ａをダイボンディングする。Next, as shown in FIG. 6B, a semiconductor pellet 2a having a pad portion formed on the upper surface is die-bonded to the lower surface of the lead frame 12a.
【００３１】ついで、図６（ｃ）に示すように、リード
フレーム１２ａの上面にパッド部を上面に形成した半導
体ペレット１ａをダイボンディングする。Then, as shown in FIG. 6C, a semiconductor pellet 1a having a pad portion formed on the upper surface of the lead frame 12a is die-bonded.
【００３２】しかる後、図６（ｄ）に示すように、半導
体ペレット１ａ，２ａのパッド部相互間あるいは半導体
ペレット２ａのパッド部と外部接続端子８ａまたは半導
体ペレット１ａのパッド部と外部接続端子８ａ間をボン
ディングワイヤ９ａにより接続する。このボンディング
ワイヤ９ａは、通常のリードフレーム１２ａの片面にの
みワイヤボンディングするボンディング装置を用いる。Thereafter, as shown in FIG. 6D, between the pad portions of the semiconductor pellets 1a, 2a or between the pad portions of the semiconductor pellet 2a and the external connection terminals 8a, or between the pad portions of the semiconductor pellet 1a and the external connection terminals 8a. The connection is made by a bonding wire 9a. For this bonding wire 9a, a bonding device that performs wire bonding only to one surface of a normal lead frame 12a is used.
【００３３】さらに、図６（ｅ）に示すように、半導体
ペレット１ａ，２ａと、外部接続端子８ａ，ボンディン
グワイヤ９ａの一部を樹脂モールド５ａで封止する。Further, as shown in FIG. 6 (e), the semiconductor pellets 1a and 2a, the external connection terminals 8a and a part of the bonding wires 9a are sealed with a resin mold 5a.
【００３４】なお、図５に示す３層以上のペレットを備
えた半導体装置においても、基本的には上述した工程を
実施する。その場合には、（ｃ）工程が複数になり、そ
れに連れて（ｄ）工程が増えるるだけである。The above-described steps are basically performed also in the semiconductor device having three or more pellets shown in FIG. In that case, the number of steps (c) becomes plural, and the number of steps (d) only increases accordingly.
【００３５】かかる実施の形態によれば、リードフレー
ムを裏返す工程も不要になり、リードフレームの両面に
ワイヤボンディングするための特殊なボンディング装置
も不要になる。According to this embodiment, the step of turning over the lead frame is not required, and a special bonding device for performing wire bonding on both sides of the lead frame is not required.
【００３６】図７（ａ）〜（ｅ）はそれぞれ本発明の半
導体装置の製造方法の第２の実施の形態を説明するため
の工程順に示した装置の縦断面図である。この実施の形
態による半導体装置の製造方法は、前述した図３および
図４に示す半導体装置を製造する方法であり、図６の工
程とほぼ同様である。FIGS. 7A to 7E are longitudinal sectional views of a device shown in the order of steps for explaining a second embodiment of the method of manufacturing a semiconductor device according to the present invention. The method of manufacturing the semiconductor device according to this embodiment is a method of manufacturing the semiconductor device shown in FIGS. 3 and 4 and is substantially the same as the process of FIG.
【００３７】まず、図７（ａ）に示すように、リードフ
レーム１２ｂに両面の接着テープ４ｂ，１０を被着す
る。この接着テープ４ｂ，１０は始めからリードフレー
ム１２ｂに付着したものを用いてもよい。First, as shown in FIG. 7A, the double-sided adhesive tapes 4b and 10 are attached to the lead frame 12b. The adhesive tapes 4b and 10 may be those adhered to the lead frame 12b from the beginning.
【００３８】ついで、図７（ｂ）に示すように、リード
フレーム１２ｂの下面にパッド部を上面に形成した半導
体ペレット２ｂをダイボンディングする。Next, as shown in FIG. 7B, a semiconductor pellet 2b having a pad portion formed on the lower surface of the lead frame 12b is die-bonded.
【００３９】ついで、図７（ｃ）に示すように、リード
フレーム１２ｂの上面にパッド部を上面に形成した半導
体ペレット１ｂをダイボンディングする。Next, as shown in FIG. 7C, the semiconductor pellet 1b having the pad portion formed on the upper surface of the lead frame 12b is die-bonded.
【００４０】しかる後、図７（ｄ）に示すように、半導
体ペレット１ｂ，２ｂのパッド部相互間あるいは半導体
ペレット２ｂのパッド部と外部接続端子８ｂまたは半導
体ペレット１ｂのパッド部と外部接続端子８ｂ間をボン
ディングワイヤ９ｂにより接続する。このボンディング
ワイヤ９ｂは、通常のリードフレーム１２ｂの片面にの
みワイヤボンディングするボンディング装置を用いる。Thereafter, as shown in FIG. 7D, between the pad portions of the semiconductor pellets 1b and 2b or between the pad portions of the semiconductor pellet 2b and the external connection terminals 8b, or the pad portions of the semiconductor pellet 1b and the external connection terminals 8b The connection is made by a bonding wire 9b. For this bonding wire 9b, a bonding device that performs wire bonding only to one surface of a normal lead frame 12b is used.
【００４１】さらに、図７（ｅ）に示すように、半導体
ペレット１ｂ，２ｂと、外部接続端子８ｂ，ボンディン
グワイヤ９ｂの一部を樹脂モールド５ｂで封止する。Further, as shown in FIG. 7E, the semiconductor pellets 1b, 2b, the external connection terminals 8b, and a part of the bonding wires 9b are sealed with a resin mold 5b.
【００４２】かかる実施の形態によれば、リードフレー
ムを裏返す工程も不要になり、リードフレームの両面に
ワイヤボンディングするための特殊なボンディング装置
も不要になる。According to this embodiment, the step of turning over the lead frame is not required, and a special bonding device for performing wire bonding on both sides of the lead frame is not required.
【００４３】[0043]
【発明の効果】以上説明したように、本発明の半導体装
置は、複数の半導体ペレットをパッド部が同一方向を向
くようにして１つのパッケージ内に封止することによ
り、実装面積を向上させ、容量を大きくすることができ
るとともに、ペレット間を１本のワイヤで接続すること
ができるという効果がある。As described above, in the semiconductor device of the present invention, the mounting area is improved by sealing a plurality of semiconductor pellets in one package so that the pads are directed in the same direction. There is an effect that the capacity can be increased and the pellets can be connected with one wire.
【００４４】また、本発明の半導体装置の製造方法は、
複数のペレットのパッド部を同一方向に向くようにして
ダイボンディングすることにより、ワイヤボンディング
を一度の工程で行うことができ、リードフレームの裏返
し工程を不要にするとともに、特殊なボンディング装置
も不要にできるので、工程の削減や組立時間の削減を実
現し、製造コストを安くできるという効果がある。The method of manufacturing a semiconductor device according to the present invention comprises:
Die bonding with the pad portions of multiple pellets facing in the same direction allows wire bonding to be performed in a single step, eliminating the need to turn over the lead frame and eliminating the need for special bonding equipment. As a result, it is possible to reduce the number of steps and the time required for assembling, thereby reducing the manufacturing cost.
【図１】本発明の半導体装置の第１の実施の形態を示す
装置の縦断面図である。FIG. 1 is a longitudinal sectional view of a semiconductor device according to a first embodiment of the present invention.
【図２】図１における半導体装置の主要部の拡大斜視図
である。FIG. 2 is an enlarged perspective view of a main part of the semiconductor device in FIG.
【図３】本発明の半導体装置の第２の実施の形態を示す
装置の縦断面図である。FIG. 3 is a longitudinal sectional view of a device showing a second embodiment of the semiconductor device of the present invention.
【図４】図３における半導体装置の主要部の拡大斜視図
である。FIG. 4 is an enlarged perspective view of a main part of the semiconductor device in FIG. 3;
【図５】本発明の半導体装置の第３の実施の形態を示す
装置の縦断面図である。FIG. 5 is a longitudinal sectional view of a semiconductor device according to a third embodiment of the present invention.
【図６】本発明の半導体装置の製造方法の第１の実施の
形態を説明するための工程順に示した装置の縦断面図で
ある。FIG. 6 is a longitudinal sectional view of the device shown in the order of steps for describing the first embodiment of the method for manufacturing a semiconductor device of the present invention.
【図７】本発明の半導体装置の製造方法の第２の実施の
形態を説明するための工程順に示した装置の縦断面図で
ある。FIG. 7 is a longitudinal sectional view of a device shown in the order of steps for describing a second embodiment of the method of manufacturing a semiconductor device according to the present invention.
【図８】従来の一例を示す半導体装置の縦断面図であ
る。FIG. 8 is a longitudinal sectional view of a semiconductor device showing an example of the related art.
【図９】従来の他の例を示す半導体装置の縦断面図であ
る。FIG. 9 is a longitudinal sectional view of a semiconductor device showing another conventional example.
１ａ，１ｂ 第１のペレット ２ａ，２ｂ 第２のペレット ３ アイランド ４ａ，４ｂ，１０ 接着テープ ５ａ，５ｂ モールド樹脂 ６ａ，６ｂ，７ａ，７ｂ ボンディングパッド ８ａ，８ｂ 外部接続端子 ９ａ，９ｂ ボンディングワイヤ １１ 第３のペレット １２ａ，１２ｂ テープ 1a, 1b 1st pellet 2a, 2b 2nd pellet 3 Island 4a, 4b, 10 Adhesive tape 5a, 5b Mold resin 6a, 6b, 7a, 7b Bonding pad 8a, 8b External connection terminal 9a, 9b Bonding wire 11th 3 pellets 12a, 12b tape
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 25/07 25/18 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H01L 25/07 25/18
Claims (5)
ード部の両面に且つパッド部が同一方向を向くようにダ
イボンディングした第１および第２の半導体ペレット
と、前記第１および第２の半導体ペレットの前記パッド
部相互間あるいは前記第１および第２の半導体ペレット
の前記パッド部と外部接続端子間を電気的に接続するボ
ンディングワイヤとを有し、前記第１および第２の半導
体ペレットを含む全体を樹脂などで封止することを特徴
とする半導体装置。1. A first and a second semiconductor pellet die-bonded to both sides of an island or a lead portion of a lead frame so that a pad portion faces in the same direction, and the pad of the first and the second semiconductor pellet. A bonding wire for electrically connecting between the portions or between the pad portions of the first and second semiconductor pellets and an external connection terminal; and the entirety including the first and second semiconductor pellets is made of resin or the like. A semiconductor device, characterized by being sealed with:
は、上側に搭載する第１の半導体ペレットに対し、下側
に搭載する第２の半導体ペレットの幅を広く形成すると
ともに、前記第２の半導体ペレットのパッド部が前記外
部接続端子に隠されることがないように配置する請求項
１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the first and second semiconductor pellets are formed such that the width of the second semiconductor pellet mounted on the lower side is wider than that of the first semiconductor pellet mounted on the upper side. The semiconductor device according to claim 1, wherein the pad portion of the semiconductor pellet is arranged so as not to be hidden by the external connection terminal.
にさらに幅の狭い第３の半導体ペレットを搭載し且つそ
のパッド部が前記第１および第２の半導体ペレットと同
一方向を向くように形成した請求項１記載の半導体装
置。3. The first semiconductor pellet is formed such that a third semiconductor pellet having a smaller width is mounted on an upper surface thereof and its pad portion faces in the same direction as the first and second semiconductor pellets. 2. The semiconductor device according to claim 1, wherein:
は、同一サイズにし且つずらせて前記アイランドもしく
は前記リード部に搭載するとともに、前記第２の半導体
ペレットは、片側のみに前記パッド部を形成し、前記第
１の半導体ペレットの前記パッド部あるいは前記外部接
続端子と片側のみでボンディング接続する請求項１記載
の半導体装置。4. The first and second semiconductor pellets are mounted on the island or the lead portion with the same size and shifted, and the second semiconductor pellet forms the pad portion only on one side. 2. The semiconductor device according to claim 1, wherein only one side of said first semiconductor pellet is bonded to said pad portion or said external connection terminal.
にダイボンディングし、前記複数の半導体ペレットを含
む全体を樹脂などで封止する半導体装置の製造方法にお
いて、パッド部を上面に形成した第１の半導体ペレット
をリードフレームの１つの面にダイボンディングする工
程と、パッド部を上面に形成した第２の半導体ペレット
をリードフレームの前記１つの面とは反対の面にダイボ
ンディングする工程と、前記第１および第２の半導体ペ
レットの前記パッド部相互間あるいは前記第１の半導体
ペレットの前記パッド部と外部接続端子または前記第２
の半導体ペレットの前記パッド部と前記外部接続端子間
をボンディングワイヤにより接続する工程と、前記第１
および第２の半導体ペレットを樹脂などで封止する工程
とを含むことを特徴とする半導体装置の製造方法。5. A method of manufacturing a semiconductor device in which a plurality of semiconductor pellets are die-bonded to a lead frame and a whole including the plurality of semiconductor pellets is sealed with a resin or the like, wherein a first semiconductor having a pad portion formed on an upper surface is provided. A step of die-bonding the pellet to one surface of the lead frame; a step of die-bonding a second semiconductor pellet having a pad portion formed on the upper surface thereof to a surface opposite to the one surface of the lead frame; And between the pad portions of the second semiconductor pellet or between the pad portion of the first semiconductor pellet and the external connection terminal or the second
Connecting the pad portion of the semiconductor pellet and the external connection terminal with a bonding wire;
And a step of sealing the second semiconductor pellet with a resin or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7181364A JP2716405B2 (en) | 1995-07-18 | 1995-07-18 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7181364A JP2716405B2 (en) | 1995-07-18 | 1995-07-18 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0936300A JPH0936300A (en) | 1997-02-07 |
| JP2716405B2 true JP2716405B2 (en) | 1998-02-18 |
Family
ID=16099439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7181364A Expired - Fee Related JP2716405B2 (en) | 1995-07-18 | 1995-07-18 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2716405B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6215192B1 (en) | 1997-06-12 | 2001-04-10 | Matsushita Electric Industrial Co., Ltd. | Integrated circuit package and integrated circuit package control system |
| JP3077668B2 (en) | 1998-05-01 | 2000-08-14 | 日本電気株式会社 | Semiconductor device, lead frame for semiconductor device, and method of manufacturing the same |
| JP3958522B2 (en) * | 1998-10-14 | 2007-08-15 | 株式会社ルネサステクノロジ | Semiconductor device |
| KR100364842B1 (en) * | 1999-09-28 | 2002-12-16 | 앰코 테크놀로지 코리아 주식회사 | Semiconductor package and method of manufacturing the same |
| JP3838178B2 (en) * | 2002-08-29 | 2006-10-25 | ソニー株式会社 | Semiconductor device |
-
1995
- 1995-07-18 JP JP7181364A patent/JP2716405B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0936300A (en) | 1997-02-07 |
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