JP2001077265A - Manufacture of resin sealed semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent metal burrs on the end surface of a lead portion by blade cutting in a lead cutting process after resin sealing. SOLUTION: When a resin sealed type semiconductor device is separated from a resin sealed lead frame by lead cutting, sealing resins 8a and 8b are formed on the top and the bottom, respectively of the lead portion 4 to be cut. By cutting the lead portion 4 together with these sealing resins 8a, 8b with a rotary blade 11, bent portions on a cut end surface of the lead portion can be prevented. Furthermore, by performing reciprocating blade cutting to cut the lead portion 4 twice, the bent inverted portion can be prevented. Therefore, a resin sealed semiconductor device wit high mounting reliability can be obtained without defects on the lead portion.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a QFN (Quad).
Flat Non-leaded Package)
The present invention relates to a method for manufacturing a small / thin resin-encapsulated semiconductor device in which a lead portion serving as an external terminal is sealed on one side, and particularly to improve production efficiency and reliability of the lead portion. And a method for realizing a resin-sealed semiconductor device.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices has been required.
Thinning is progressing. In addition, the number of pins has been increased while being small and thin, and a high-density small and thin resin-sealed semiconductor device has been demanded.

Hereinafter, a lead frame used in a conventional QFN-type resin-sealed semiconductor device will be described.

FIG. 42 is a view showing the structure of a conventional lead frame. FIG. 42 (a) is a plan view, and FIG.
FIG. 42B is a cross-sectional view taken along a line AA1 in FIG.

As shown in FIG. 42, a conventional lead frame includes a frame 101 and a rectangular die pad 10 on which a semiconductor element is mounted.
2 and a suspension lead 1 having a corner portion of the die pad portion 102 supported at its tip end and an end portion connected to the frame 101.
03, and a beam-shaped lead portion 104 electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire when the semiconductor element is mounted. When the lead portion 104 is sealed with the sealing resin, a portion embedded in the sealing resin portion constitutes an inner lead portion 104a, and a portion exposed from the sealing resin portion constitutes an outer lead portion 104b. And the inner lead portion 10
4a and the outer lead portion 104b are provided integrally and continuously. In FIG. 42, a region indicated by a dashed line indicates a region sealed with a sealing resin when a semiconductor element is mounted to form a resin-encapsulated semiconductor device, and a portion indicated by a dashed line indicates After mounting a semiconductor element and sealing with a resin to form a resin-sealed semiconductor device, the lead 1
FIG. 4 shows a portion where the outer lead portion 104b is cut by a mold.

FIG. 42 shows a conventional lead frame.
As shown in (b), the die pad portion 102 is supported by the suspension lead portion 103, and the die pad portion 10 is supported by the depress portion provided on the suspension lead portion 103.
2 is set up so as to be disposed above the upper surface of the lead portion 104.

Next, a conventional resin-sealed semiconductor device will be described. FIG. 43 is a diagram showing a resin-sealed semiconductor device using the lead frame shown in FIG.
(A) is a perspective plan view showing the internal configuration by a broken line,
FIG. 43B is a cross-sectional view taken along a line B-B1 in FIG.

As shown in FIG. 43, a semiconductor element 105 is mounted on a die pad section 102 of a lead frame, and the semiconductor element 105 and an inner lead section 104a of the lead section 104 are electrically connected by a thin metal wire 106. I have. Then, the semiconductor element 10 on the die pad portion 102
5. The outer periphery of the inner lead portion 104a is the sealing resin 107.
Is sealed. The bottom portion of the lead portion 104 (the inner lead portion 104a) is
Is exposed with a standoff from the bottom surface of the external terminal 1
08. Although the outer lead portion 104b is exposed from the side surface of the sealing resin 107, it is substantially the same as the side surface of the sealing resin 107.

Next, a method of manufacturing a conventional resin-encapsulated semiconductor device will be described.

[0010] First, as shown in FIG.
In the frame, the semiconductor device is mounted in a rectangular shape, and the upset die pad portion 102 and the corners of the die pad portion 102 are supported at their tip portions, and the ends are connected to the frame frame. When the semiconductor device is mounted on the suspension lead portion, the beam-shaped lead portion 10 electrically connected to the mounted semiconductor device by connecting means such as a thin metal wire.
4 is prepared.

Then, as shown in FIG. 45, the semiconductor element 10 is placed on the die pad portion 102 with an adhesive such as a silver paste.
5 is mounted and bonded.

Next, as shown in FIG.
02 and the inner lead 1 of the lead 104 on the surface of the semiconductor element 105 mounted on the
04a is electrically connected with the thin metal wire 106.

Next, as shown in FIG.
The sealing sheet 109 is brought into close contact with at least the bottom surface of the lead portion 104 of the lead frame in which 5 is mounted. The sealing sheet 109 is a member for protecting the sealing resin from flowing around the bottom surface of the lead portion 104 and exposing the bottom surface of the lead portion 104.

Next, as shown in FIG. 48, the lead frame is placed in a mold, and the lead portion 104 is pressed against the sealing sheet 109 by the mold. Is implanted to seal the upper surface area of the die pad portion 102, the semiconductor element 105, the lead portion 104, and the connection region of the thin metal wire 106 as the outer periphery of the lead frame. FIG. 49 shows a state where the outer periphery is sealed with a sealing resin 107.

Next, as shown in FIG. 50, the sealing sheet 1 adhered to the bottom surface of the lead portion 104 of the lead frame.
09 is removed by peel-off or the like.

Next, as shown in FIG.
Is cut by a cutting blade 111 using a die to separate the resin-encapsulated semiconductor device.

As shown in FIG. 52, a semiconductor element 105 is mounted on the die pad section 102 of the lead frame, and the semiconductor element 105 and the inner lead section 104a of the lead section 104 are electrically connected by a thin metal wire 106. The outer periphery is sealed with a sealing resin 107, and the bottom surface of the lead portion 104 (inner lead portion 104 a) is exposed with a standoff from the bottom surface of the sealing resin 107 to form an external terminal 108. At the same time, the outer lead portion 104b is exposed from the side surface of the sealing resin 107, and a resin-sealed semiconductor device having substantially the same surface as the side surface of the sealing resin 107 is obtained.

[0018]

However, in a conventional lead frame and a method of manufacturing a resin-encapsulated semiconductor device using the same, particularly after the lead frame is resin-encapsulated, the lead is cut by a cutting blade of a mold. Since the cutting was performed, in the cutting process, there were problems such as resin chips and cracks occurring in the sealing resin portion adjacent to the lead portion due to the impact at the time of lead cutting, and the lead portion falling off from the sealing resin portion. there were. Since the structure of the conventional resin-encapsulated semiconductor device is a so-called single-sided encapsulation structure in which only the upper surface of the lead portion is covered with an encapsulating resin, the lead cutting by the cutting blade of the mold causes an The lead portion and the sealing resin portion were easily damaged.

Furthermore, in recent years, a semiconductor device has been mounted on a large-sized lead frame substrate, connected with thin metal wires, and then encapsulation has been progressing in which the outer periphery is entirely sealed. In the case where the entire structure is covered with the sealing resin, not only the lead cut but also the sealing resin portion must be cut, and thus the problem that the cutting means using the cutting blade of the mold cannot cope with the problem has become apparent. .

The present invention provides a method of manufacturing a resin-encapsulated semiconductor device which can cope with the above-mentioned conventional problems and future trends in the manufacturing process of the resin-encapsulated semiconductor device.
Provided is a method of manufacturing a resin-encapsulated semiconductor device in which the lead portion and the encapsulating resin portion are free from defects and defects in a cutting step when separating the resin-encapsulated semiconductor device from a lead frame or a substrate, which increases productivity. Is what you do.

[0021]

In order to solve the above-mentioned conventional problems, a method of manufacturing a resin-encapsulated semiconductor device according to the present invention comprises a frame main body made of a metal plate and a substantially central region of the frame main body. A die pad portion for mounting the semiconductor element, a suspension lead portion supporting the die pad portion at the tip end, and connected to the frame at the other end portion, at least the tip end portion extends toward the die pad portion. A step of preparing a lead frame having a lead portion having the other end connected to the frame frame, and a cut portion provided in the vicinity of a region of the lead portion connected to the frame frame; and A step of mounting a semiconductor element on a die pad portion; and an electrode pad on a main surface of the semiconductor element mounted on the die pad portion, and each upper surface of a lead portion of the lead frame. A step of connecting the genus thin wire, a sealing mold, in contact with the surface of the lead frame,
A step of preparing a first mold having a carved portion in a portion corresponding to a cut portion of a lead portion of the lead frame, and a second mold for sandwiching the lead frame together with the first mold; A step of adhering a sealing sheet to each bottom surface of at least the lead portion on the back side of the lead frame,
The lead frame is placed between the first mold and the second mold, and a pressing force is applied to at least an end of a lead portion of the lead frame to seal the bottom surface of the lead portion. While injecting a sealing resin in a state pressed against the sheet, the semiconductor element, the die pad portion, the fine metal wire, and the region excluding the bottom surface of the lead portion are resin-sealed with the sealing resin as the upper surface side of the lead frame. Forming a sealing resin on a cut portion of a lead portion of the frame by injecting a sealing resin into the engraved portion of the first mold, and removing the sealing sheet from the lead frame after resin sealing. Removing, and cutting the upper surface of the cut portion of the lead with a blade, and cutting the cut portion together with the sealing resin formed on the cut portion to obtain a resin-sealed semiconductor device. Resin seal It is a manufacturing method of the type semiconductor device.

Further, the method of manufacturing a resin-encapsulated semiconductor device according to the present invention is characterized in that a frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame main body, Support the die pad part with the part,
A hanging lead connected to the frame at the other end, at least a leading end extending toward the die pad, and a lead connected to the frame at the other end, and the frame of the lead; A step of preparing a lead frame provided in the vicinity of the connected region and having a cut portion thinner than other lead portions; a step of mounting a semiconductor element on the die pad portion of the prepared lead frame; An electrode pad on the main surface of the semiconductor element mounted on the part, a step of connecting each upper surface of the lead part of the lead frame with a thin metal wire, and as a sealing mold,
A first mold abutting on a surface side of the lead frame;
A step of preparing a second mold that sandwiches the lead frame together with the first mold; a step of adhering a sealing sheet to at least each bottom surface of the lead portion on the back side of the lead frame; The lead frame is placed between the mold and the second mold, and a pressing force is applied to at least an end of a lead portion of the lead frame, and a bottom surface of the lead portion is pressed against the sealing sheet. In this state, a sealing resin is injected, and a region excluding the semiconductor element, the die pad portion, the fine metal wire, and the bottom surface of the lead portion is resin-sealed with a sealing resin as an upper surface side of the lead frame, and the lead is formed. A step of injecting a sealing resin into a thin step portion of the cut portion of the lead portion of the frame to form a sealing resin on the bottom surface of the cut portion of the lead portion of the frame; A resin-encapsulated semiconductor device in which a step of removing a sheet from the lead frame and cutting the upper surface of the cut portion of the lead with a blade and cutting the cut portion together with a sealing resin formed on the bottom surface of the cut portion; And a method for manufacturing a resin-encapsulated semiconductor device.

Further, the method of manufacturing a resin-encapsulated semiconductor device according to the present invention is characterized in that a frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame main body, Support the die pad part with the part,
A hanging lead connected to the frame at the other end, at least a leading end extending toward the die pad, and a lead connected to the frame at the other end, and the frame of the lead; A step of preparing a lead frame provided in the vicinity of the connected region and having a cut portion thinner than other lead portions; a step of mounting a semiconductor element on the die pad portion of the prepared lead frame; An electrode pad on the main surface of the semiconductor element mounted on the part, a step of connecting each upper surface of the lead part of the lead frame with a thin metal wire, and as a sealing mold,
A first mold that is in contact with the front surface side of the lead frame and has an engraved portion in a portion corresponding to a cut portion of a lead portion of the lead frame; and a second mold that sandwiches the lead frame together with the first mold. A step of preparing a mold and
A step of adhering a sealing sheet to at least each bottom surface of the lead portion on the back surface side of the lead frame, and placing the lead frame between the first mold and the second mold; A pressing force is applied to the ends of the lead portions of the frame, a sealing resin is injected in a state where the bottom surface of the lead portion is pressed against the sealing sheet, and the semiconductor element and the die pad portion are used as the upper surface side of the lead frame. A thin metal wire, and a region excluding the bottom surface of the lead portion is resin-sealed with a sealing resin, and a step portion due to a thin thickness of a cut portion of the lead portion of the lead frame and a carved portion of the first mold are formed. Forming a sealing resin on the upper and lower surfaces of the cut portion of the lead portion of the frame by injecting the sealing resin into the
The step of removing the sealing sheet from the lead frame after resin sealing, and cutting the upper surface of the cut portion of the lead with a blade, and cutting the cut portion together with the sealing resin formed on the upper and lower surfaces of the cut portion. And a step of obtaining a resin-encapsulated semiconductor device.

Further, according to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, there are provided a frame body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame body, Support the die pad part with the part,
A hanging lead connected to the frame at the other end, at least a leading end extending toward the die pad, and a lead connected to the frame at the other end, and the frame of the lead; A step of preparing a lead frame provided in the vicinity of the connected region and having a cut portion thinner than other lead portions; a step of mounting a semiconductor element on the die pad portion of the prepared lead frame; An electrode pad on the main surface of the semiconductor element mounted on the part, a step of connecting each upper surface of the lead part of the lead frame with a thin metal wire, and as a sealing mold,
A first mold that is in contact with the front surface side of the lead frame and has an engraved portion in a portion corresponding to a cut portion of a lead portion of the lead frame; and a second mold that sandwiches the lead frame together with the first mold. A step of preparing a mold and
A step of adhering a sealing sheet to at least each bottom surface of the lead portion on the back surface side of the lead frame, and placing the lead frame between the first mold and the second mold; A pressing force is applied to the ends of the lead portions of the frame, a sealing resin is injected in a state where the bottom surface of the lead portion is pressed against the sealing sheet, and the semiconductor element and the die pad portion are used as the upper surface side of the lead frame. A thin metal wire, and a region excluding the bottom surface of the lead portion is resin-sealed with a sealing resin, and a step portion due to a thin thickness of a cut portion of the lead portion of the lead frame and a carved portion of the first mold are formed. Forming a sealing resin on the upper and lower surfaces of the cut portion of the lead portion of the frame by injecting the sealing resin into the
The step of removing the sealing sheet from the lead frame after resin sealing, and cutting the upper surface of the cut portion of the lead with a blade, and cutting the cut portion together with the sealing resin formed on the upper and lower surfaces of the cut portion. And a step of separating the resin-encapsulated semiconductor device by cutting in a direction opposite to the cutting path with a blade and reciprocating cutting to separate the resin-encapsulated semiconductor device.

As described above, the method for manufacturing a resin-encapsulated semiconductor device according to the present invention increases the productivity by cutting the lead with a blade, and performs cutting when separating the resin-encapsulated semiconductor device from the lead frame and substrate. In the process, defects and defects can be prevented from occurring in the lead portion and the sealing resin portion.

Furthermore, when the lead frame after resin sealing is cut to separate the resin-encapsulated semiconductor device by a lead, a sealing resin is formed on the upper, lower, or upper and lower portions of the lead portion to be cut. In this state, since the lead is cut together with the sealing resin, the occurrence of burrs on the lead end face can be prevented. Further, even if burrs are generated on the cut end surface of the lead portion by performing the second cutting with a blade in the direction opposite to the first cutting path and cutting the cut portion reciprocally, the second cut is further performed. 2 is performed, the vertical flash portion and the horizontal flash portion generated in the first cutting can be removed, and a resin-encapsulated semiconductor device free of the flash portion can be obtained.

[0027]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a lead frame according to the present invention and a method for manufacturing a resin-encapsulated semiconductor device using the same will be described below with reference to the drawings.

First, the lead frame of this embodiment will be described.

FIG. 1 is a view showing a part of the lead frame of the present embodiment, and FIG. 1 (a) is a plan view, and FIG.
FIG. 2B is a cross-sectional view taken along a line C-C1 in FIG.

As shown in FIG. 1, the lead frame according to the present embodiment includes a frame 1, a rectangular die pad 2 on which a semiconductor element is mounted, and a corner of the die pad 2. When the semiconductor element is mounted on the suspension lead 3 whose end is connected to the frame frame 1 and the semiconductor element is mounted, the semiconductor chip is electrically connected to the mounted semiconductor element by connecting means such as a thin metal wire. And a beam-shaped lead portion 4. When the lead portion 4 is sealed with the sealing resin, a portion embedded in the sealing resin portion constitutes an inner lead portion 4a, and a portion exposed from the sealing resin portion constitutes an outer lead portion 4b. The inner lead portion 4a and the outer lead portion 4b are provided integrally and continuously. In FIG. 1, a region indicated by a broken line indicates a region to be sealed with a sealing resin when a semiconductor element is mounted to form a resin-encapsulated semiconductor device, and a portion indicated by a dashed line indicates After the semiconductor element is mounted and resin-sealed to form a resin-sealed semiconductor device, the lead 4
The cutting portion 5 that cuts the (outer lead portion 4b) is shown.

In the lead frame of this embodiment, as shown in FIG. 1B, the die pad portion 2 is supported by the suspension lead portion 3, and the die pad portion is provided by the depress portion provided on the suspension lead portion 3. Die pad 2 is lead 4
It is upset so as to be disposed above the upper surface.

The lead frame is not a single pattern having the structure shown in FIG. 1, but a plurality of patterns arranged continuously in the left, right, up and down directions.

Next, a resin-sealed semiconductor device using the lead frame of this embodiment will be described. FIG. 2 shows FIG.
2A is a diagram showing a resin-encapsulated semiconductor device using the lead frame shown in FIG. 2A, FIG. 2A is a perspective plan view showing the internal configuration by a broken line, and FIG. ) DD
It is sectional drawing of one place.

As shown in FIG. 2, a semiconductor element 6 is mounted on the die pad section 2 of the lead frame, and the semiconductor element 6 and the inner lead section 4a of the lead section 4 are electrically connected by a thin metal wire 7. I have. The outer periphery of the semiconductor element 6 and the inner lead portion 4a on the die pad portion 2 is sealed with a sealing resin 8. And the lead part 4
The bottom portion of the (inner lead portion 4 a) is exposed with a standoff from the bottom surface of the sealing resin 8 to form an external terminal 9. Although the outer lead portions 4b are exposed from the side surfaces of the sealing resin 8, they are substantially the same as the side surfaces of the sealing resin 8.

Next, a method of manufacturing the resin-encapsulated semiconductor device of this embodiment will be described.

First, as shown in FIG. 3, a frame frame, a rectangular die pad portion 2 in which a semiconductor element is placed in the frame frame, and an upset die pad portion 2 and a corner portion of the die pad portion 2 are formed. A suspension lead supported at its tip and connected to the frame frame at the end, and a beam-shaped beam electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire when the semiconductor element is mounted. A lead frame having the lead portion 4 is prepared.

Then, as shown in FIG.
The semiconductor element 6 is mounted thereon with an adhesive such as a silver paste and bonded.

Next, as shown in FIG. 5, an electrode pad (not shown) on the surface of the semiconductor element 6 mounted on the die pad section 2 and an inner lead section 4a of the lead section 4 are electrically connected by a thin metal wire 7. Connect to

Next, as shown in FIG. 6, at least the lead portion 4 of the lead frame with the semiconductor element 6 mounted thereon.
The sealing sheet 10 is brought into close contact with the bottom surface of. The sealing sheet 10 is a member for protecting the sealing resin from flowing around the bottom surface of the lead portion 4 and exposing the bottom surface of the lead portion 4.

Next, as shown in FIG. 7, the lead frame is placed in a mold, and the lead 4 is sealed with the sealing sheet 1 by the mold.
A sealing resin 8 made of an epoxy resin is injected in a state where the sealing member 8 is pressed against the upper surface of the die pad portion 2, the semiconductor element 6, and the connection region of the upper surface region of the lead portion 4 and the connection region of the thin metal wire 7. Stop. In FIG.
Shows the state sealed with.

Next, as shown in FIG. 9, the sealing sheet 10 adhered to the bottom surface of the lead portion 4 of the lead frame is removed by peel-off or the like.

Next, as shown in FIG. 10, the cutting section 5 of the lead section 4 is subjected to lead cutting by the rotating blade 11. Incidentally, the width of the blade 11 used here is usually 100 mm, which is the same as that of the blade used in dicing a wafer.
[Μm].

As shown in FIG. 11, the semiconductor element 6 is mounted on the die pad 2 of the lead frame, and the semiconductor element 6 and the inner lead 4a of the lead 4 are electrically connected by the thin metal wire 7. , The surrounding is the sealing resin 8
And the bottom surface of the lead portion 4 (inner lead portion 4a) is exposed with a standoff from the bottom surface of the sealing resin 8 to form the external terminal 9 and to form the external terminal 9. The outer lead portion 4b is exposed from the side surface, and a resin-sealed semiconductor device having substantially the same surface as the side surface of the sealing resin 8 is obtained.

As described above, when manufacturing a resin-sealed semiconductor device using the lead frame of the present embodiment, in the lead cutting step after resin sealing, the semiconductor device is used for substrate dicing or the like instead of the cutting blade of the mold. Lead portion 4 (cut portion 5) that is cut by cutting with a simple rotating blade 11
, The impact due to the pressing force at the time of cutting is not applied,
The lead portion 4 and the sealing resin 8 in the vicinity of the lead portion 4 can be damaged and the lead can be cut. Therefore, a highly reliable resin-encapsulated semiconductor device can be obtained by eliminating defects and defects in the lead portion and the encapsulation resin portion.

Next, another problem which may occur in the resin-encapsulated semiconductor device obtained by the method of manufacturing a resin-encapsulated semiconductor device according to the present embodiment will be described.

FIG. 12 is a sectional view showing the problem of the resin-encapsulated semiconductor device of this embodiment. The resin-encapsulated semiconductor device shown in FIG. 12 has the same basic configuration as that of the resin-encapsulated semiconductor device shown in FIG. 2, except that the cutting portion 5 of the lead portion 4 is cut by a rotating blade in the manufacturing process. The lead portion 4 is formed by cutting the lead portion 4 of the cut lead portion 4 with the burrs 12 (metal) on the surface of the outer lead portion 4b of the cut lead portion 4 due to the relationship between the rotating force of the rotating blade and the metal material that is the material of the lead portion 4. Burrs) are formed. When the resin-encapsulated semiconductor device is mounted on a substrate, the burrs 12 may cause a mounting failure or cause a solder bridge at the time of solder bonding. Or the burrs that occurred 1
2 has to be removed. In FIG. 12,
The burrs 12 are shown on the bottom side of the lead 4,
It may also occur on the side surface of the lead portion 4 and on the upper surface side of the lead portion 4.

Normally, factors that cause the burrs 12 include:
The metal material (for example, Cu
Material) is flipped up, and a part of the metal material protrudes in the form of a thin film,
It is considered that the burrs 12 remain on the end surface of the cut lead 4.

Hereinafter, a method of manufacturing a resin-encapsulated semiconductor device according to the present invention will be described with respect to an embodiment in which the flash portion 12 generated mainly on the side surface and the bottom surface of the lead portion 4 or the generation of the flash portion 12 itself is prevented. Embodiments for solving the problems will be described with reference to the drawings.

First, a first embodiment for solving the problem will be described.

FIGS. 13 to 21 are sectional views showing the steps of a method for manufacturing a resin-sealed semiconductor device according to this embodiment. The lead frame used in the present embodiment has the same configuration as the lead frame shown in FIG.

First, as shown in FIG.
In the frame, the die pad 2 having a rectangular shape on which the semiconductor element is mounted, and the upset die pad 2 and the corners of the die pad 2 were supported at the tip end, and the end was connected to the frame. When a semiconductor element is mounted, a lead frame having a suspended lead part and a beam-shaped lead part 4 electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire is prepared.

Then, as shown in FIG. 14, the semiconductor element 6 is mounted on the die pad portion 2 with an adhesive such as a silver paste and bonded.

Next, as shown in FIG.
The electrode pads (not shown) on the surface of the semiconductor element 6 mounted thereon are electrically connected to the inner lead portions 4 a of the lead portions 4 by the thin metal wires 7.

Next, as shown in FIG. 16, the sealing sheet 10 is brought into close contact with at least the bottom surface of the lead portion 4 of the lead frame on which the semiconductor element 6 is mounted. The sealing sheet 10 is a member for protecting the sealing resin from flowing around the bottom surface of the lead portion 4 and exposing the bottom surface of the lead portion 4.

Next, as shown in FIG.
The lead frame was placed in a sealing mold composed of a mold and a second mold (not shown), and the lead 4 was pressed against the sealing sheet 10 by the first mold 13. In this state, a sealing resin 8 made of an epoxy resin is injected to seal the die pad portion 2, the semiconductor element 6, the upper surface region of the lead portion 4, and the connection region of the thin metal wire 7 as the outer periphery of the lead frame. The first mold 13 used here is a mold that comes into contact with the front side of the lead frame and has an engraved portion 14 in a portion corresponding to a cut portion of the lead portion 4 of the lead frame. The sealing resin is formed in the upper surface region including the cut portion of No. 4.

FIG. 18 shows a state in which the outer periphery is sealed with a sealing resin 8, and a sealing resin 8 a by a carved portion 14 is formed in a portion corresponding to a cut portion of the lead portion 4.

Next, as shown in FIG. 19, the sealing sheet 10 adhered to the bottom surface of the lead portion 4 of the lead frame is removed by peel-off or the like.

Next, as shown in FIG. 20, the lead blade 4 is cut at the cut portion of the lead portion 4 by the rotating blade 11. Incidentally, the width of the blade 11 used here is usually 100 mm, which is the same as that of the blade used in dicing a wafer.
[Μm]. In this lead cutting, joint cutting is performed together with the lead portion 4 and the sealing resin 8a formed on the upper surface thereof.

As shown in FIG. 21, the semiconductor element 6 is mounted on the die pad 2 of the lead frame, and the semiconductor element 6 and the inner lead 4a of the lead 4 are electrically connected by the thin metal wire 7. , The surrounding is the sealing resin 8
And the bottom surface of the lead portion 4 (inner lead portion 4a) is exposed with a standoff from the bottom surface of the sealing resin 8 to form the external terminal 9 and to form the external terminal 9. The outer lead portion 4b is exposed from the side surface, and a resin-sealed semiconductor device having the same surface as the side surface of the sealing resin 8 is obtained. In particular, the sealing resin 8a is formed on the outer lead portion 4b so as to have a step due to the mold. In addition, no burrs are formed on the end face of the lead portion 4, particularly on the upper portion of the end face of the lead portion 4.

As described above, in the present embodiment, when the lead frame after resin sealing is cut to separate the resin sealed semiconductor device, the sealing resin is applied to the region including the cut portion of the lead portion. Formed, with the sealing resin interposed, cut the lead part together with a rotating blade and full cut to separate the resin-encapsulated semiconductor device, preventing the occurrence of burrs on the cut end surface of the lead part Can be lead cut. Moreover, lead cutting can be performed in a short time, and productivity can be increased.

Next, a second embodiment for solving the problem will be described.

FIGS. 22 to 30 are cross-sectional views showing the steps of a method for manufacturing the resin-encapsulated semiconductor device of this embodiment. The lead frame used in the present embodiment has the same configuration as the lead frame shown in FIG. 1, but the vicinity of the region of the lead portion 4 connected to the frame 1 and the region including the cutting portion 5 include A thin portion having a thickness smaller than that of the lead portion is formed.

First, as shown in FIG. 22, a frame
In the frame, the die pad 2 having a rectangular shape on which the semiconductor element is mounted, and the upset die pad 2 and the corners of the die pad 2 were supported at the tip end, and the end was connected to the frame. A hanging lead portion, and a beam-shaped lead portion 4 that is electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire when the semiconductor element is mounted,
In a region near the region where the lead portion 4 is connected to the frame 1 and including the cut portion, a lead frame having a thin portion 15 having a smaller thickness than other lead portions is prepared.

Then, as shown in FIG. 23, the semiconductor element 6 is mounted on the die pad portion 2 with an adhesive such as a silver paste and bonded.

Next, as shown in FIG.
The electrode pads (not shown) on the surface of the semiconductor element 6 mounted thereon are electrically connected to the inner lead portions 4 a of the lead portions 4 by the thin metal wires 7.

Next, as shown in FIG. 25, the sealing sheet 10 is brought into close contact with at least the bottom surface of the lead portion 4 of the lead frame on which the semiconductor element 6 is mounted. The sealing sheet 10 is a member for protecting the sealing resin from flowing around the bottom surface of the lead portion 4 and exposing the bottom surface of the lead portion 4.

Next, as shown in FIG.
The lead frame was placed in a sealing mold composed of a mold and a second mold (not shown), and the lead 4 was pressed against the sealing sheet 10 by the first mold 13. In this state, a sealing resin 8 made of an epoxy resin is injected to seal the die pad portion 2, the semiconductor element 6, the upper surface region of the lead portion 4, and the connection region of the thin metal wire 7 as the outer periphery of the lead frame. The first mold 13 used here is a mold that comes into contact with the front side of the lead frame and has an engraved portion 14 in a portion corresponding to a cut portion of the lead portion 4 of the lead frame. The sealing resin is formed in the upper surface region including the cut portion of No. 4.

FIG. 27 shows a state in which the outer periphery is sealed with a sealing resin 8. A sealing resin 8 a is formed by a carved portion 14 at a portion corresponding to a cut portion of the lead portion 4, and the lower surface of the lead portion 4 is formed. In the thin portion 15, the sealing resin 8b of the step difference is formed.

Next, as shown in FIG. 28, the sealing sheet 10 adhered to the bottom surface of the lead portion 4 of the lead frame is removed by peel-off or the like.

Next, as shown in FIG. 29, a lead cut is performed on the cut portion of the lead portion 4 by the rotating blade 11. Incidentally, the width of the blade 11 used here is usually 100 mm, which is the same as that of the blade used in dicing a wafer.
[Μm]. In this lead cutting, joint cutting is performed together with the sealing resin 8a formed on the upper surface thereof together with the lead portion 4 and the sealing resin 8b formed on the lower surface thereof.

As shown in FIG. 30, the semiconductor element 6 is mounted on the die pad section 2 of the lead frame, and the semiconductor element 6 and the inner lead section 4a of the lead section 4 are electrically connected by the thin metal wire 7. , The surrounding is the sealing resin 8
And the bottom surface of the lead portion 4 (inner lead portion 4a) is exposed with a standoff from the bottom surface of the sealing resin 8 to form the external terminal 9 and to form the external terminal 9. The outer lead portion 4b is exposed from the side surface, and a resin-sealed semiconductor device having the same surface as the side surface of the sealing resin 8 is obtained. In particular, a sealing resin 8a is formed above the outer lead portion 4b so as to have a step due to the formation of a mold, and a sealing resin 8b is formed below the outer lead portion 4b so as to have a step due to the thin portion 15. Is what it is. In addition, no burrs are formed on the end face of the lead portion 4, especially on the upper and lower portions of the end face of the lead portion 4.

As described above, in this embodiment, when the lead frame after resin sealing is separated by cutting the lead into the resin-sealed semiconductor device, the lead frame is sealed above and below the region including the cut portion of the lead portion. To form a stop resin, cut the lead portion together with a rotary blade with the sealing resin interposed, and fully cut to separate the resin-encapsulated semiconductor device, insert the burrs on the cut end surface of the lead portion. It can lead-cut while preventing occurrence. Moreover, lead cutting can be performed in a short time, and productivity can be increased. In addition, in this embodiment, in addition to the above-described first embodiment, the cutting is performed with the cutting resin interposed also at the lower portion of the lead portion to be cut, so that the occurrence of the flash portion can be further prevented.

In this embodiment, a lead frame is used in which a thin portion 15 having a thickness smaller than that of the lead portion 4 is formed below a region including a region where the lead portion 4 is cut, and a region where the lead portion is cut. In order to form a sealing resin on the upper part of the region including the sealing resin 14, sealing is performed with a mold having an engraved portion 14.
An example is shown in which the lead portions 4a and 8b are formed, and the lead portions are cut by joint cutting. However, a lead in which the thickness of the lead portion 4 is thinner than the other portions is formed below the region including the region where the lead portion 4 is cut. Using a frame, seal with a normal mold,
The sealing resin may be formed only at the lower part of the lead portion 4 and cut off together. In this case, it is possible to prevent burrs generated particularly below the end face of the cut surface of the lead portion 4.

Next, a third embodiment for solving the problem will be described.

FIGS. 31 to 41 are cross-sectional views showing the steps of a method for manufacturing a resin-encapsulated semiconductor device according to this embodiment. The lead frame used in the present embodiment has the same configuration as the lead frame shown in FIG. 1, but the vicinity of the region of the lead portion 4 connected to the frame 1 and the region including the cutting portion 5 include A thin portion having a thickness smaller than that of the lead portion is formed. The manufacturing method of the present embodiment is basically the same as that of the above-described second embodiment, and has a reciprocating cut configuration.

First, as shown in FIG. 31, a frame
In the frame, the die pad 2 having a rectangular shape on which the semiconductor element is mounted, and the upset die pad 2 and the corners of the die pad 2 were supported at the tip end, and the end was connected to the frame. A hanging lead portion, and a beam-shaped lead portion 4 that is electrically connected to the mounted semiconductor element by a connecting means such as a thin metal wire when the semiconductor element is mounted,
In a region near the region where the lead portion 4 is connected to the frame 1 and including the cut portion, a lead frame having a thin portion 15 having a smaller thickness than other lead portions is prepared.

Then, as shown in FIG. 32, the semiconductor element 6 is mounted on the die pad portion 2 with an adhesive such as silver paste and bonded.

Next, as shown in FIG.
The electrode pads (not shown) on the surface of the semiconductor element 6 mounted thereon are electrically connected to the inner lead portions 4 a of the lead portions 4 by the thin metal wires 7.

Next, as shown in FIG. 34, the sealing sheet 10 is brought into close contact with at least the bottom surface of the lead portion 4 of the lead frame on which the semiconductor element 6 is mounted. The sealing sheet 10 is a member for protecting the sealing resin from flowing around the bottom surface of the lead portion 4 and exposing the bottom surface of the lead portion 4.

Next, as shown in FIG.
The lead frame was placed in a sealing mold composed of a mold and a second mold (not shown), and the lead 4 was pressed against the sealing sheet 10 by the first mold 13. In this state, a sealing resin 8 made of an epoxy resin is injected to seal the die pad portion 2, the semiconductor element 6, the upper surface region of the lead portion 4, and the connection region of the thin metal wire 7 as the outer periphery of the lead frame. The first mold 13 used here is a mold that comes into contact with the front side of the lead frame and has an engraved portion 14 in a portion corresponding to a cut portion of the lead portion 4 of the lead frame. The sealing resin is formed in the upper surface region including the cut portion of No. 4.

FIG. 36 shows a state in which the outer periphery is sealed with a sealing resin 8. A sealing resin 8 a is formed by a carved portion 14 at a portion corresponding to a cut portion of the lead portion 4. In the thin portion 15, the sealing resin 8b of the step difference is formed.

Next, as shown in FIG. 37, the sealing sheet 10 adhered to the bottom surface of the lead portion 4 of the lead frame is removed by peel-off or the like.

Next, as shown in FIG. 38, a lead cut by a first cutting is performed by the rotating blade 11 on the cut portion of the lead portion 4. The blade 1 used here
The width of 1 is usually about 100 [μm] similar to a blade used in dicing a wafer. In this lead cutting, joint cutting is performed together with the sealing resin 8a formed on the upper surface thereof together with the lead portion 4 and the sealing resin 8b formed on the lower surface thereof.

As shown in FIGS. 39 and 40, the path of the groove formed by the first cutting of the lead portion 4 is
The second cutting is performed in the backward direction by the blade 11 in the reverse direction,
Cut back and forth.

As shown in FIG. 41, the semiconductor element 6 is mounted on the die pad section 2 of the lead frame, and the semiconductor element 6 and the inner lead section 4a of the lead section 4 are electrically connected by the thin metal wire 7. , The surrounding is the sealing resin 8
And the bottom surface of the lead portion 4 (inner lead portion 4a) is exposed with a standoff from the bottom surface of the sealing resin 8 to form the external terminal 9 and to form the external terminal 9. The outer lead portion 4b is exposed from the side surface, and a resin-sealed semiconductor device having the same surface as the side surface of the sealing resin 8 is obtained. In particular, a sealing resin 8a is formed above the outer lead portion 4b so as to have a step due to the formation of a mold, and a sealing resin 8b is formed below the outer lead portion 4b so as to have a step due to the thin portion 15. Is what it is. In addition, no burrs are formed on the end face of the lead portion 4, especially on the upper and lower portions of the end face of the lead portion 4.

As described above, according to the present embodiment, when the lead frame after resin sealing is cut to separate the resin-encapsulated semiconductor device, the lead frame is sealed above and below the region including the cut portion of the lead portion. To form a stop resin, cut the lead portion together with a rotary blade with the sealing resin interposed, and fully cut to separate the resin-encapsulated semiconductor device, insert the burrs on the cut end surface of the lead portion. It can lead-cut while preventing occurrence. Moreover, lead cutting can be performed in a short time, and productivity can be increased. Further, in this embodiment, in addition to the above-described first embodiment, since reciprocating cutting is performed with the same cutting resin intervening also at the lower part of the lead portion to be cut, generation of a flash portion can be further prevented.

In each embodiment, optimal values are set as appropriate for the number of rotations of the blade at the time of cutting, the feed speed of the object to be cut, the size of the blade, the material of the blade, and the like. As for the rotating blade to be used, a blade having a V-shaped cross section may be used in addition to a blade having a U-shaped or flat cross-section used for ordinary dicing.

Further, in each embodiment, one frame is included in the frame.
A package consisting of one die pad and a plurality of leads arranged opposite to each other is sealed with a resin for each unit with respect to a lead frame having a plurality of units in the area. An example in which the lead portion exposed between the units is cut by the cut portion is shown, but as shown in the present embodiment, the lead portion is gradually cut, and the cut is performed on the blade. shape,
By means of performing lead cutting by changing the width and the direction of the cutting surface, all the units in the lead frame are comprehensively molded and resin-encapsulated as a whole, and the upper surface of the lead portion between each unit, that is, between each unit The same operation and effect can be obtained even when the sealing resin is formed in the cut portion of the lead portion.

[0089]

As described above, in the method of manufacturing a resin-encapsulated semiconductor device of the present invention, in the lead cutting step after resin encapsulation, a rotary blade used for substrate dicing or the like is used instead of the cutting blade of the mold. By cutting and cutting, an impact due to the pressing force at the time of cutting is not applied to the lead portion to be cut, and the lead portion and the sealing resin in the vicinity of the lead portion are eliminated to cut the lead. be able to. Therefore, a highly reliable resin-encapsulated semiconductor device can be obtained by eliminating defects and defects in the lead portion and the encapsulation resin portion.

Further, when separating the resin-encapsulated semiconductor device by cutting the lead from the lead frame after resin encapsulation, an encapsulating resin is formed above, below, or above and below the lead portion to be cut. Then, by performing lead cutting together with the sealing resin in this state, it is possible to prevent the occurrence of burrs on the lead end faces. Further, a second cutting is performed by a blade in a direction opposite to a path of the first cutting,
By cutting the cut portion back and forth, even if burrs occur on the cut end surface of the lead portion, a second cutting is further performed to remove the vertical burrs and the horizontal burrs generated by the first cutting. You can do it.

[Brief description of the drawings]

FIG. 1 is a view showing a lead frame according to an embodiment of the present invention;

FIG. 2 is a diagram showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating a method for manufacturing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a method for manufacturing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 5 is a sectional view showing the method for manufacturing the resin-sealed semiconductor device according to the embodiment of the present invention;

FIG. 6 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 8 is a sectional view showing the method for manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 9 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 10 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 11 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 12 is a sectional view showing a problem of the resin-sealed semiconductor device according to the embodiment of the present invention;

FIG. 13 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 14 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 15 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 16 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 17 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 18 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 19 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 20 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 21 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 22 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 23 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 24 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 25 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 26 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 27 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 28 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 29 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 30 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 31 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 32 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 33 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 34 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 35 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 36 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 37 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 38 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 39 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 40 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 41 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 42 is a view showing a conventional lead frame.

FIG. 43 shows a conventional resin-encapsulated semiconductor device.

FIG. 44 is a cross-sectional view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 45 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 46 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 47 is a cross-sectional view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 48 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 49 is a cross-sectional view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 50 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 51 is a sectional view showing a method of manufacturing a conventional resin-encapsulated semiconductor device.

FIG. 52 is a cross-sectional view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Frame frame 2 Die pad part 3 Suspended lead part 4 Lead part 5 Cutting part 6 Semiconductor element 7 Thin metal wire 8 Sealing resin 9 External terminal 10 Sealing sheet 11 Rotating blade 12 Flash part 13 First mold 14 Engraved part 15 Thin thickness Part 101 Frame frame 102 Die pad part 103 Suspended lead part 104 Lead part 105 Semiconductor element 106 Fine metal wire 107 Sealing resin 108 External terminal 109 Sealing sheet 110 Cutting part 111 Cutting blade

Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01L 23/28 H01L 23/28 A (72) Inventor Katsuki Utsumi 1-1, Kochicho, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. Inside the company (72) Inventor Osamu Adachi 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Corporation Inside (72) Inventor Takahiro Matsuo 1-1, Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Corporation Inside F-term (Reference) 4M109 AA01 BA01 CA21 DA10 FA00 5F061 AA01 BA01 CA21 CB12 CB13 EA03 5F067 AA01 AA09 AB04 BC12 BD05 BD10 DB00 DE14

Claims (4)

[Claims] 1. A frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame main body, and the die pad portion is supported at a front end portion, and the frame is supported at the other end portion. Suspended lead portion connected to the frame, at least the tip portion extends toward the die pad portion,
A step of preparing a lead frame including a lead portion having the other end connected to the frame frame, and a cut portion provided near a region of the lead portion connected to the frame frame; and a die pad of the prepared lead frame. Mounting a semiconductor element on the die pad portion, connecting the electrode pads on the main surface of the semiconductor element mounted on the die pad portion and the respective upper surfaces of the lead portions of the lead frame with thin metal wires, A first mold having an engraved portion at a portion corresponding to a cut portion of a lead portion of the lead frame, the first mold being in contact with a front surface side of the lead frame; A step of preparing a second mold for sandwiching a frame; a step of bringing a sealing sheet into close contact with at least each bottom surface of the lead portion on the back side of the lead frame; The lead frame is placed between the mold and the second mold, and a pressing force is applied to at least an end of a lead portion of the lead frame, and a bottom surface of the lead portion is pressed against the sealing sheet. Injecting a sealing resin in the state, the semiconductor element as a top surface side of the lead frame, a die pad portion, a thin metal wire, and resin sealing the region except the bottom surface of the lead portion with a sealing resin,
A step of injecting a sealing resin into the engraved portion of the first mold to form a sealing resin on a cut portion of a lead portion of the frame; and removing the sealing sheet from the lead frame after resin sealing. And a step of performing cutting with a blade on the upper surface of the cut portion of the lead, and cutting the cut portion together with the sealing resin formed on the cut portion to obtain a resin-sealed semiconductor device. A method for manufacturing a resin-encapsulated semiconductor device, comprising: 2. A frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame main body, a tip end portion supporting the die pad portion, and the other end portion supporting the frame. Suspended lead portion connected to the frame, at least the tip portion extends toward the die pad portion,
A step of preparing a lead frame, the other end of which is connected to the frame frame, and a lead frame which is provided near the region of the lead portion connected to the frame frame and has a cut portion thinner than other lead portions; Mounting a semiconductor element on the die pad portion of the prepared lead frame, and electrode pads on a main surface of the semiconductor element mounted on the die pad portion, and each upper surface of the lead portion of the lead frame. A step of connecting with a thin metal wire, and as a sealing mold, a first mold contacting the front side of the lead frame and a second mold sandwiching the lead frame together with the first mold are prepared. Performing a sealing step on at least each of the bottom surfaces of the lead portions on the back surface side of the lead frame; and placing the lead frame between the first mold and the second mold. A sealing resin is injected in a state where a pressing force is applied to at least an end portion of the lead portion of the lead frame and the bottom surface of the lead portion is pressed against the sealing sheet, As the upper surface side, the semiconductor element, the die pad portion, the thin metal wire, and a region except the bottom surface of the lead portion are resin-sealed with a sealing resin, and a step portion due to a thin portion of the cut portion of the lead portion of the lead frame. A step of injecting a sealing resin to form a sealing resin on a bottom surface of a cut portion of a lead portion of the frame; a step of removing the sealing sheet from the lead frame after resin sealing; and a top surface of a cut portion of the lead And cutting the cutting portion together with the sealing resin formed on the bottom surface of the cutting portion to obtain a resin-sealed semiconductor device. Method of manufacturing Aburafutome type semiconductor device. 3. A frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central area of the frame main body, and the die pad portion is supported at a front end portion, and the frame is supported at the other end portion. Suspended lead portion connected to the frame, at least the tip portion extends toward the die pad portion,
A step of preparing a lead frame, the other end of which is connected to the frame frame, and a lead frame which is provided near the region of the lead portion connected to the frame frame and has a cut portion thinner than other lead portions; Mounting a semiconductor element on the die pad portion of the prepared lead frame, and electrode pads on a main surface of the semiconductor element mounted on the die pad portion, and each upper surface of the lead portion of the lead frame. A step of connecting with a thin metal wire, and a first mold having an engraved portion in a portion corresponding to a cut portion of a lead portion of the lead frame in contact with a surface side of the lead frame as a sealing mold, A step of preparing a second mold for sandwiching the lead frame together with the first mold; A step of adhering the door, the first
The lead frame is placed between the mold and the second mold, and a pressing force is applied to at least an end of a lead portion of the lead frame, and a bottom surface of the lead portion is pressed against the sealing sheet. In this state, a sealing resin is injected, and a region excluding the semiconductor element, the die pad portion, the fine metal wire, and the bottom surface of the lead portion is resin-sealed with a sealing resin as an upper surface side of the lead frame, and the lead is formed. A step portion formed by a thin portion of the cut portion of the lead portion of the frame;
A step of injecting a sealing resin into the engraved portion of the mold to form a sealing resin on the upper and lower surfaces of the cut portion of the lead portion of the frame, and removing the sealing sheet from the lead frame after resin sealing. And cutting the cutting portion together with the sealing resin formed on the upper and lower surfaces of the cutting portion to obtain a resin-encapsulated semiconductor device. A method for manufacturing a resin-encapsulated semiconductor device. 4. A frame main body made of a metal plate, a die pad portion for mounting a semiconductor element disposed in a substantially central region of the frame main body, a tip end supporting the die pad portion, and a second end supporting the frame. Suspended lead portion connected to the frame, at least the tip portion extends toward the die pad portion,
A step of preparing a lead frame, the other end of which is connected to the frame frame, and a lead frame which is provided near the region of the lead portion connected to the frame frame and has a cut portion thinner than other lead portions; Mounting a semiconductor element on the die pad portion of the prepared lead frame, and electrode pads on a main surface of the semiconductor element mounted on the die pad portion, and each upper surface of the lead portion of the lead frame. A step of connecting with a thin metal wire, and a first mold having an engraved portion in a portion corresponding to a cut portion of a lead portion of the lead frame in contact with a surface side of the lead frame as a sealing mold, A step of preparing a second mold for sandwiching the lead frame together with the first mold; A step of adhering the door, the first
The lead frame is placed between the mold and the second mold, and a pressing force is applied to at least an end of a lead portion of the lead frame, and a bottom surface of the lead portion is pressed against the sealing sheet. In this state, a sealing resin is injected, and a region excluding the semiconductor element, the die pad portion, the fine metal wire, and the bottom surface of the lead portion is resin-sealed with a sealing resin as an upper surface side of the lead frame, and the lead is formed. A step portion formed by a thin portion of the cut portion of the lead portion of the frame;
A step of injecting a sealing resin into the engraved portion of the mold to form a sealing resin on the upper and lower surfaces of the cut portion of the lead portion of the frame, and removing the sealing sheet from the lead frame after resin sealing. Process, cutting the upper surface of the cutting portion of the lead with a blade, cutting the cutting portion together with the sealing resin formed on the upper and lower surfaces of the cutting portion, and further cutting with a blade in the opposite direction to the path of the cutting And separating the resin-sealed semiconductor device by reciprocating cutting to separate the resin-sealed semiconductor device.