JPS61231733A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS61231733A
JPS61231733A JP60073032A JP7303285A JPS61231733A JP S61231733 A JPS61231733 A JP S61231733A JP 60073032 A JP60073032 A JP 60073032A JP 7303285 A JP7303285 A JP 7303285A JP S61231733 A JPS61231733 A JP S61231733A
Authority
JP
Japan
Prior art keywords
wire
lead
strength
bonding
ultrasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60073032A
Other languages
Japanese (ja)
Inventor
Kazumichi Machida
一道 町田
Saneyasu Hirota
弘田　実保
Yoko Shibuya
渋谷　洋子
Seizo Omae
大前　誠蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60073032A priority Critical patent/JPS61231733A/en
Publication of JPS61231733A publication Critical patent/JPS61231733A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H01L2224/48458—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to obtain a sufficiently high connection strength by a method wherein the direction of ultrasonic vibrations to be applied is made to coincide with the extended direction of the rolled scars on the surface of the lead. CONSTITUTION:A metal wire 1 is bonded with a lead 2 in the same way as the conventional one by an ultrasonic wave combined thermocompression bonding system, yet at that time, the direction A of ultrasonic vibrations to be applied is made to coincide with the extended direction of rolled scars 2a on the surface of the lead 2. Whereupon a smooth slide is generated between the metal wire 1 and the lead 2 by the action of the ultrasonic vibrations and a dew condensation phenomenon of both is promoted. The ultrasonic vibrations act efficiently on the wire 1 in such a way, the wire 1 is never deformed so much and a bonding of the wire 1 and the lead 2 is performed. Accordingly, the desired bonding strength can be secured, and furthermore, as the amount of deformation of the wire is small, the amount of deformation of the neck part is also small and the strength of the neck can be sufficiently secured. As a result, a sufficiently high connection strength can be secured and the reliability of the connection is improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にワイヤ
ボンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a wire bonding method.

〔従来の技術〕[Conventional technology]

半導体装置、例えばＩＣやトランジスタの製造工程にお
いては、半導体チップ上の電極とリードとを金属ワイヤ
を用いて結線することが行なわれており、このワイヤの
ボンディングには主として超音波併用熱圧着方式が採用
されている。In the manufacturing process of semiconductor devices, such as ICs and transistors, electrodes on semiconductor chips and leads are connected using metal wires, and thermocompression bonding combined with ultrasonic waves is mainly used for bonding these wires. It has been adopted.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ここで金属ワイヤのリードへの結線強度について考える
。この種の製造工程においては、ワイヤボンディングが
完了するとボンディングツールであるキャピラリチップ
でもってワイヤを引っ張ってワイヤの残りをボンディン
グ部から破断させる工程があり、又半導体装置によって
は後工程でモールド樹脂が圧入されることから、ワイヤ
のリードへの結線強度はこれを十分に高くしておくこと
が要求される。Let us now consider the connection strength of the metal wire to the lead. In this type of manufacturing process, when wire bonding is completed, there is a process in which the wire is pulled with a capillary tip, which is a bonding tool, to break the remaining wire from the bonding part, and depending on the semiconductor device, molding resin is press-fitted in a later process. Therefore, it is required that the connection strength of the wire to the lead be sufficiently high.

第４図及び第５図はワイヤとリードとのボンディング部
分を示し、図において、１は金属ワイヤ、２はリード、
３はワイヤ１の変形部分、４はワイヤｌとリード２との
接合部、５はワイヤ１とその変形部分３との境界部分に
できるネック部である。4 and 5 show the bonding part between the wire and the lead. In the figures, 1 is the metal wire, 2 is the lead,
3 is a deformed portion of the wire 1; 4 is a joint between the wire 1 and the lead 2; and 5 is a neck formed at the boundary between the wire 1 and the deformed portion 3.

ワイヤ１の結線強度は接合部４でのボンディング強度（
接合強度）とネック部５の機械的強度とによって決まり
、ボンディング強度は接合部４の面積に比例し、又ネッ
ク強度はネック部５の厚さに比例するものである。The connection strength of the wire 1 is the bonding strength at the joint 4 (
The bonding strength is determined by the bonding strength) and the mechanical strength of the neck portion 5, and the bonding strength is proportional to the area of the bonding portion 4, and the neck strength is proportional to the thickness of the neck portion 5.

しかるに従来のボンディング方法では、例えば第４図に
示すように、ネック強度を確保するために超音波出力（
又は超音波印加時間）を小さくしてネック部５の変形量
を少なくすると接合部４の面積が確保できず、ボンディ
ング強度が低く、一方第５図に示すように、ボンディン
グ強度を確保するために超音波出力を大きくしてワイヤ
変形部分３の変形量（変形幅Ｗ）を大きくすると、ネッ
ク部５の変形量も多くなってネック強度が低くなり、そ
の結果十分高い結線強度を得ることができず、ワイヤｌ
の破断工程やモールド工程においてワイヤ１がリード２
からはがれるおそれがあった。However, in conventional bonding methods, as shown in Fig. 4, ultrasonic output (
If the amount of deformation of the neck portion 5 is reduced by reducing the amount of deformation of the neck portion 5 (or ultrasonic application time), the area of the joint portion 4 cannot be secured and the bonding strength will be low.On the other hand, as shown in FIG. When the ultrasonic output is increased to increase the amount of deformation (deformation width W) of the wire deformed portion 3, the amount of deformation of the neck portion 5 also increases and the neck strength decreases, and as a result, it is not possible to obtain a sufficiently high connection strength. Wire l
In the breaking process and molding process, wire 1 becomes lead 2.
There was a risk of it coming off.

この発明は以上のような問題点に鑑みてなされたもので
、十分高い結線強度を得ることのできる半導体装置の製
造方法を提供することを目的としている。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device that can obtain sufficiently high connection strength.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る半導体装置の製造方法は、印加する超音
波振動の方向をリード表面の圧延痕の延びる方向とした
ものである。In the method for manufacturing a semiconductor device according to the present invention, the direction of applied ultrasonic vibration is the direction in which rolling marks on the lead surface extend.

〔作用〕[Effect]

この発明においては、超音波１辰動の方向を圧延痕の延
びる方向としたことから、超音波振動の作用によって金
属ワイヤとリードとの間に円滑なすべりが生じ、ワイヤ
とリードとの凝着現象が促進されるものである。In this invention, since the direction of the ultrasonic wave is set in the direction in which the rolling marks extend, the action of the ultrasonic vibration causes smooth sliding between the metal wire and the lead, resulting in the adhesion between the wire and the lead. The phenomenon is promoted.

〔実施例〕〔Example〕

以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第１図及び第２図は本発明の一実施例による半導体装置
の製造方法を模式的に示したものである。FIGS. 1 and 2 schematically show a method for manufacturing a semiconductor device according to an embodiment of the present invention.

図において、第４．５図と同一符号は同図と同一のもの
を示し、２ａはリード２表面の圧延痕、６はボンディン
グツールであるキャピラリチップであり、Ａば超音波振
動の方向を示す。In the figure, the same reference numerals as in Fig. 4.5 indicate the same parts as in the same figure, 2a is a rolling trace on the surface of the lead 2, 6 is a capillary tip which is a bonding tool, and A indicates the direction of ultrasonic vibration. .

本実施例の方法では、金属ワイヤ１をリード２に従来の
方法と同様に、超音波併用熱圧着方式によりボンディン
グするが、その際超音波振動の方向Ａをリード２表面の
圧延痕２ａの延びる方向に一致させる。すると超音波振
動の作用によって金属ワイヤとり一ド２との間に円滑な
すべりが生じて、両者の凝着現象が促進され、こうして
超音波振動がワイヤ１に効率よく作用してワイヤ１をそ
れほど変形させることなく、ワイヤ１とリード２との接
合が行なわれる。In the method of this embodiment, the metal wire 1 is bonded to the lead 2 by the ultrasonic thermocompression method as in the conventional method. Match direction. Then, due to the action of the ultrasonic vibration, smooth sliding occurs between the metal wire and the wire 2, promoting the adhesion phenomenon between the two, and in this way, the ultrasonic vibration acts efficiently on the wire 1, causing the wire 1 to become loose. The wire 1 and the lead 2 are joined together without being deformed.

以上のような本実施例の方法では、超音波振動の方向を
リードの圧延痕の方向と一致させるようにしたので、ワ
イヤとリードとの凝着現象が促進され、超音波出力を増
大してワイヤの変形量を太き（することなく、所望のボ
ンディング強度を確保でき、又ワイヤの変形量が小さい
ことから、ネック部の変形量も小さく、十分なネック強
度を確保できる。その結果、十分高い結線強度を確保で
き、結線の信頼性を向上できる。In the method of this embodiment as described above, the direction of ultrasonic vibration is made to match the direction of the rolling marks on the lead, so that the adhesion between the wire and the lead is promoted, and the ultrasonic output is increased. The desired bonding strength can be secured without increasing the amount of deformation of the wire, and since the amount of deformation of the wire is small, the amount of deformation of the neck portion is also small and sufficient neck strength can be ensured. High connection strength can be ensured and connection reliability can be improved.

また第３図は本実施例の方法及び従来の方法における超
音波出力（又は超音波印加時間）に対する結線強度の実
験結果を示す。図において、曲線ａ、ｂは本実施例方法
及び従来方法におけるボンディング強度の変化、直線Ｃ
はネック強度の変化を示す。第３図によれば、同一の超
音波出力に対するボンディング強度は本実施例方法の方
が従来方法に比して高く、従ってボンディング強度ａ。Further, FIG. 3 shows the experimental results of the connection strength with respect to the ultrasonic output (or ultrasonic application time) in the method of this embodiment and the conventional method. In the figure, curves a and b represent changes in bonding strength in the method of this embodiment and the conventional method, and straight line C
indicates the change in neck strength. According to FIG. 3, the bonding strength for the same ultrasonic output is higher in the method of this embodiment than in the conventional method, and therefore the bonding strength is a.

ｂとネック強度Ｃとによって決まる結線強度（曲線ａ、
ｂと直線Ｃとの交点で表わされる）は本実施例方法の強
度ｆ１の方が従来方法の強度ｆ２に比して高くなってい
ることが分かる。The connection strength determined by b and neck strength C (curve a,
It can be seen that the intensity f1 of the method of this embodiment is higher than the intensity f2 of the conventional method.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明に係る半導体装置の製造方法によ
れば、超音波振動の方向をリード表面の圧延痕の延びる
方向としたので、超音波出力又は超音波印加時間を大き
くすることなく、所望のボンディング強度が確保でき、
その結果結線強度を高めて結線の信頼性を向上できる効
果がある。As described above, according to the method for manufacturing a semiconductor device according to the present invention, since the direction of ultrasonic vibration is set in the direction in which the rolling marks on the lead surface extend, the ultrasonic output or the ultrasonic application time is not increased. The desired bonding strength can be secured,
As a result, there is an effect that the connection strength can be increased and the reliability of the connection can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例による半導体装置の製造方法
の主要工程を示す模式図、第２図（ａ）　（ｂ）は各々
上記方法によるボンディング状態を示す側面図及び平面
図、第３図は本実施例の効果を説明するための超音波出
力に対する結線強度の関係を示す図、第４図（ａ）　（
ｂ）は各々従来の方法における超音波低出力時のボンデ
ィング状態を示す側面図及び平面図、第５図（ａ）　（
ｂ）は各々従来方法における超音波高出力時のボンディ
ング状態を示す側面図及び平面図である。 １・・・全屈ワイヤ、２・・・リード、２ａ・・・圧延
痕、Ａ・・・超音波振動の方向。 なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a schematic diagram showing the main steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIGS. The figure is a diagram showing the relationship between the connection strength and the ultrasonic output in order to explain the effects of this example.
b) is a side view and a plan view showing the bonding state at low ultrasonic output in the conventional method, respectively, and Fig. 5(a) (
b) is a side view and a plan view showing the bonding state at high ultrasonic output in the conventional method, respectively. DESCRIPTION OF SYMBOLS 1... Fully bent wire, 2... Lead, 2a... Rolling mark, A... Direction of ultrasonic vibration. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] （１）半導体チップ上の電極とリードとを金属ワイヤを
用いて超音波併用熱圧着方式により結線する半導体装置
の製造方法において、上記超音波振動の方向を上記リー
ド表面の圧延痕の延びる方向としたことを特徴とする半
導体装置の製造方法。(1) In a method for manufacturing a semiconductor device in which an electrode on a semiconductor chip and a lead are connected by a thermocompression bonding method combined with ultrasonic waves using a metal wire, the direction of the ultrasonic vibration is set to the direction in which rolling marks on the surface of the lead extend. A method for manufacturing a semiconductor device, characterized in that:
JP60073032A 1985-04-05 1985-04-05 Manufacture of semiconductor device Pending JPS61231733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073032A JPS61231733A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073032A JPS61231733A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS61231733A true JPS61231733A (en) 1986-10-16

Family

ID=13506601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073032A Pending JPS61231733A (en) 1985-04-05 1985-04-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS61231733A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014042005A1 (en) * 2012-09-12 2014-03-20 株式会社Ｇｓユアサ Electricity storage device and processs for producing electricity storage device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014042005A1 (en) * 2012-09-12 2014-03-20 株式会社Ｇｓユアサ Electricity storage device and processs for producing electricity storage device
JPWO2014042005A1 (en) * 2012-09-12 2016-08-18 株式会社Ｇｓユアサ Electric storage element and method for manufacturing electric storage element
US10003067B2 (en) 2012-09-12 2018-06-19 Gs Yuasa International Ltd. Electric storage device and method for producing electric storage device

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