JPS62136835A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS62136835A
JPS62136835A JP60278646A JP27864685A JPS62136835A JP S62136835 A JPS62136835 A JP S62136835A JP 60278646 A JP60278646 A JP 60278646A JP 27864685 A JP27864685 A JP 27864685A JP S62136835 A JPS62136835 A JP S62136835A
Authority
JP
Japan
Prior art keywords
ball
wire
electrode
gas atmosphere
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60278646A
Other languages
Japanese (ja)
Inventor
Kazumichi Machida
一道 町田
Saneyasu Hirota
弘田　実保
Masaaki Shimotomai
下斗米　将昭
Seizo Omae
大前　誠蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60278646A priority Critical patent/JPS62136835A/en
Publication of JPS62136835A publication Critical patent/JPS62136835A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To join a metallic wire and an electrode excellently without damaging the electrode and a semiconductor chip, and to use the metallic wire, cost thereof is low, in place of a gold wire by conducting the ball formation and ball bonding of the metallic wire in an inert-gas atmosphere. CONSTITUTION:Argon gas is fed into a shielding cover 12 and an inert-gas atmosphere 13 is formed in the shielding cover 12, and high voltage is applied between a copper wire 10 and a discharge electrode 11 in the inert-gas atmosphere 13. Consequently, discharge is generated between the copper wire 10 and the discharge electrode 11 and an arc 14 is shaped, and the tip of the copper wire 10 is given heat and a ball 10a is formed. As a result, when the ball 10a is shaped, the ball 10a is pushed against an aluminum electrode 3 for a semiconductor chip 2 by using a capillary chip 5 in the inert-gas atmosphere 13, and ultrasonic vibrations are applied to the ball 10a. Accordingly, since the ball 10a is deformed and the ball 10a and the aluminum electrode 3 are joined, another tip of the copper wire 10 is switch-bonded with a lead 4.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にＩＣや
トランジスタなどの製造工程において、金属ワイヤを接
続するワイヤボンディング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a wire bonding method for connecting metal wires in the manufacturing process of ICs, transistors, and the like.

〔従来の技術〕[Conventional technology]

第４図は従来のワイヤボンディング方法を検式的に示し
たものである。図において、１は金ワイヤ、２は半導体
チップ、３は半導体チップ２上に形成されたアルミ電極
、４は銀めっき等の表面処理が施された銅合金リード、
５はボンディングツールであるキャピラリチップである
。FIG. 4 schematically shows a conventional wire bonding method. In the figure, 1 is a gold wire, 2 is a semiconductor chip, 3 is an aluminum electrode formed on the semiconductor chip 2, 4 is a copper alloy lead with surface treatment such as silver plating,
5 is a capillary tip which is a bonding tool.

従来のワイヤボンディング方法では、金ワイヤ１の先端
をアーク入熱で溶融させ、これを凝固させてボール部１
ａを形成し、このボール部１ａをアルミ電極３にボール
ボンディングした後（第４図（ａ）、　（ｂ）参照）、
金ワイヤ１の他端側をリード４にステッチボンディング
するようにしており（第４図（Ｃ）、　＋ｄ）参照）、
又ワイヤ１の接合には主として超音波併用熱圧着方式が
用いられている。In the conventional wire bonding method, the tip of the gold wire 1 is melted by arc heat input, and this is solidified to form the ball part 1.
After forming the ball portion 1a and ball bonding the aluminum electrode 3 (see FIGS. 4(a) and 4(b)),
The other end of the gold wire 1 is stitch-bonded to the lead 4 (see Figure 4 (C), +d).
Further, for joining the wires 1, a thermocompression bonding method combined with ultrasonic waves is mainly used.

以上のように従来のこの種の半導体装置においては、ボ
ンディング用金属ワイヤとして金ワイヤが使用されてい
るが、この場合コストが高（つくことと、半導体チップ
２上のアルミ電極３との接合部の長期信頼性が低いとい
う欠点があるため、金に代わる材料及びそのボンディン
グ技術が種々検討されている。As described above, in conventional semiconductor devices of this type, gold wire is used as the metal wire for bonding, but in this case, the cost is high (it is difficult to attach the gold wire to the aluminum electrode 3 on the semiconductor chip 2), and Since gold has the disadvantage of low long-term reliability, various materials and bonding techniques to replace gold are being investigated.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ここで材料原価低減及び素子の長期信転性向上という観
点から、金属ワイヤを金から銅に代える場合について考
える。金属ワイヤを電極にボンディングする場合、良好
な接合状態を得るためには金属ワイヤの硬さと電極の硬
さとが近位しているのが望ましい。従来の金ワイヤを用
いる場合には半導体チップのアルミ電極の硬さはビッカ
ース硬さでＨｖ３５〜４０であるが、一般の銅ワイヤの
硬さはビッカース硬さでＨｖ４５以上であり、従って一
船の銅ワイヤをそのまま従来のアルミ電極に接合しよう
とするとボンディング性が悪いという問題が生じ、この
問題を解消するため超音波出力を、例えば振幅０．２〜
０．３μｍ程度に増大させると、第５図に示されるよう
に、アルミ電極３ａが接合部周囲に排斥されて銅ワイヤ
１０のボール１０ａが半導体チップ２に当り、電極３及
び半導体チップ２が損傷を受けるおそれがある。Here, from the viewpoint of reducing material costs and improving long-term reliability of the device, we will consider the case where the metal wire is replaced with copper from gold. When bonding a metal wire to an electrode, it is desirable that the hardness of the metal wire and the hardness of the electrode be close to each other in order to obtain a good bonding state. When conventional gold wire is used, the hardness of the aluminum electrode of a semiconductor chip is Hv35 to 40 on Vickers hardness, but the hardness of general copper wire is Hv45 or more on Vickers hardness, so If you try to bond a copper wire to a conventional aluminum electrode as it is, you will have a problem with poor bonding properties.
When the diameter increases to about 0.3 μm, the aluminum electrode 3a is pushed around the joint and the ball 10a of the copper wire 10 hits the semiconductor chip 2, damaging the electrode 3 and the semiconductor chip 2, as shown in FIG. There is a risk of receiving

この発明は、以上のような問題点を鑑み、電極及び半導
体チップが損傷を受けることなく、金属ワイヤと電極と
を良好に接合できる半導体装置の製造方法を提供するこ
とを目的としている。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide a method for manufacturing a semiconductor device that can bond metal wires and electrodes well without damaging the electrodes and the semiconductor chip.

ところで超音波併用熱圧着ボンディングにおける接合性
について見ると、良好な接合状態を得るためには、材料
表面の酸化皮膜等の吸着物を十分に破壊、除去すること
、及び接合界面における材料の塑性変形により、酸化膜
破壊後の新生面同志の接触面積を拡大することが極めて
重要である。By the way, looking at the bondability in ultrasonic thermocompression bonding, in order to obtain a good bond condition, it is necessary to sufficiently destroy and remove adsorbed substances such as oxide films on the material surface, and to prevent plastic deformation of the material at the bonding interface. Therefore, it is extremely important to expand the contact area between the new surfaces after the oxide film is destroyed.

ここで金属ワイヤの表面酸化について見ると、金表面は
酸化されにくいのに対し、銅、アルミニウム等はその表
面が酸化されやすいという性質を有し、そのため従来の
金板外の金属ワイヤを用いる場合は、ポール形成につい
てはこれを不活性ガス雰囲気で行なっていたが、ボール
ボンディングについてはこれを大気中で行なうのが一般
的であった。従ってこのような従来のワイヤボンディン
グ方法によって銅ワイヤのボンディングを行なうように
すると、ボール−表面が酸化され、又同時にアルミ電極
表面の酸化も進行し、ワイヤと電極の硬さの違いに加え
、この酸化膜が原因になって良好なボンディング性が得
られず、上述のように大きな超音波出力が必要であった
訳である。Looking at the surface oxidation of metal wires, the surface of gold is difficult to oxidize, whereas the surfaces of copper, aluminum, etc. are easily oxidized. Therefore, when using metal wires other than conventional gold plates, Although pole formation was performed in an inert gas atmosphere, ball bonding was generally performed in the atmosphere. Therefore, if copper wire is bonded using such a conventional wire bonding method, the ball surface will be oxidized, and at the same time, the aluminum electrode surface will also be oxidized.In addition to the difference in hardness between the wire and electrode, this This is because good bonding properties cannot be obtained due to the oxide film, and a large ultrasonic output is required as described above.

〔問題点を解決するための手段〕[Means for solving problems]

そこでこの発明は、半導体チップ上の電極とリードとを
金属ワイヤを用いて結線する半導体装置の製造方法にお
いて、金属ワイヤのボール形成及びポールボンディング
を不活性ガス雰囲気中で行なうようにしたものである。Accordingly, the present invention provides a method for manufacturing a semiconductor device in which electrodes on a semiconductor chip and leads are connected using metal wires, in which ball formation and pole bonding of the metal wires are performed in an inert gas atmosphere. .

〔作用〕[Effect]

この発明においては、不活性ガス雰囲気中でボール形成
及びポールボンディングを行なうようにしたことから、
ボール及び電極の表面酸化が防止され、低い超音波出力
でもってボールが半導体チップの電極に良好にボンディ
ングされるものである。In this invention, since ball formation and pole bonding are performed in an inert gas atmosphere,
Surface oxidation of the balls and electrodes is prevented, and the balls can be bonded well to the electrodes of the semiconductor chip with low ultrasonic output.

〔実施例〕〔Example〕

以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

第１図ないし第３図は本発明の一実施例による半導体装
置の製造方法を示す。図において、第４図及び第５図と
同一符号は同図と同一のものを示し、１０は銅ワイヤ、
１０ａはボール、１１は放電電極、１２はシールドカバ
ー、１３は不活性ガス雰囲気、１４はアークである。1 to 3 show a method of manufacturing a semiconductor device according to an embodiment of the present invention. In the figure, the same reference numerals as in FIGS. 4 and 5 indicate the same parts as in the same figure, 10 is a copper wire,
10a is a ball, 11 is a discharge electrode, 12 is a shield cover, 13 is an inert gas atmosphere, and 14 is an arc.

本実施例の方法では、まずシールドカバー１２内にアル
ゴンガスを送給してシールドカバー１２内に不活性ガス
雰囲気１３を形成し、この不活性ガス雰囲気１３中で銅
ワイヤ１０と放電電極１１との間に高電圧を印加する。In the method of this embodiment, first, argon gas is supplied into the shield cover 12 to form an inert gas atmosphere 13 inside the shield cover 12, and the copper wire 10 and the discharge electrode 11 are connected in this inert gas atmosphere 13. Apply a high voltage between.

すると銅ワイヤ１０と放電電極１１との間に放電が起こ
ってアーク１４が形成され、銅ワイヤ１０の先端に熱が
投与されてボール１０ａが形成される。Then, a discharge occurs between the copper wire 10 and the discharge electrode 11, an arc 14 is formed, heat is applied to the tip of the copper wire 10, and a ball 10a is formed.

こうしてボール１０ａが形成されると、上記不活性ガス
雰囲気１３中で、キャピラリチップ５を用いてボール１
０ａを半導体チップ２のアルミ電極３に押圧し、これに
振幅０．１１１ｍの超音波振動を印加する。するとボー
ル１０ａが変形してボール１０ａとアルミ電極３とが接
合されるので、その後従来と同様に銅ワイヤ１０の他端
をリード４にステッチボンディングする。After the ball 10a is formed in this way, the ball 10a is formed using the capillary tip 5 in the inert gas atmosphere 13.
0a is pressed against the aluminum electrode 3 of the semiconductor chip 2, and ultrasonic vibration with an amplitude of 0.111 m is applied thereto. Then, the ball 10a is deformed and the aluminum electrode 3 is bonded to the ball 10a, and then the other end of the copper wire 10 is stitch-bonded to the lead 4 as in the conventional method.

以上のような本実施例の方法では、ボール形成及びポー
ルボンディングを不活性ガス雰囲気中で行なうようにし
たので、ボール及びアルミ電極表面の酸化を防止でき、
超音波出力として従来０．２〜０．３μｍ程度の振幅が
必要であったのが、０．１μｍ程度の振幅で良く、その
結果電極及び半導体チップが損傷を受けることなく、銅
のワイヤを良好にアルミ電極に接合でき、これにより現
在ワイヤボンディングに用いられている金ワイヤに代え
て低度な銅ワイヤの使用が可能となり、大幅な材料原価
低減が実現できるとともに、ワイヤと電極との接合部の
長期信幀性を向上できる。In the method of this embodiment as described above, ball formation and pole bonding are performed in an inert gas atmosphere, so oxidation of the ball and aluminum electrode surfaces can be prevented.
Conventionally, an amplitude of about 0.2 to 0.3 μm was required for ultrasonic output, but an amplitude of about 0.1 μm is sufficient, and as a result, the electrodes and semiconductor chips are not damaged, and copper wires can be cleaned easily. This makes it possible to use low-grade copper wire in place of the gold wire currently used for wire bonding, significantly reducing material costs, and reducing the bonding area between the wire and electrode. can improve long-term credibility.

なお上記実施例では金属ワイヤとして銅ワイヤを用いた
場合について説明したが、この金属ワイヤの材料はパラ
ジウム、アルミニウム、銀あるいはこれらの低元素添加
合金、又は低元素添加銅合金であってもよい。In the above embodiments, a copper wire is used as the metal wire, but the material of the metal wire may be palladium, aluminum, silver, an alloy of these with low element addition, or a copper alloy with low element addition.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、半導体チップ上の電極と
リードとを金属ワイヤを用いて結線する半導体装置の製
造方法において、金属ワイヤのボール形成及びボールボ
ンディングを不活性ガス雰囲気中で行なうようにしたの
で、電極及び半導体チップが損傷を受けることなく、金
属ワイヤと電極とを良好に接合でき、金ワイヤに代えて
低度な金属ワイヤの使用が可能になるという効果がある
。As described above, according to the present invention, in a method for manufacturing a semiconductor device in which electrodes and leads on a semiconductor chip are connected using metal wires, ball formation and ball bonding of metal wires are performed in an inert gas atmosphere. As a result, the metal wire and the electrode can be bonded well without damaging the electrode and the semiconductor chip, and it is possible to use a low-grade metal wire in place of the gold wire.

【図面の簡単な説明】[Brief explanation of drawings]

第１図ないし第３図は本発明の一実施例による半導体装
置の製造方法を模式的に示す図で、第１図（ａ）、　（
ｂ）は各々アーク放電時及びボール形成後の状態を示す
図、第２図はボールボンディング途中の状態を示す図、
第３図はボールボンディング後の状態を示す図、第４図
（ａ）〜（ｄ）は各々従来の方法を示す模式図、第５図
は発明が解決しようとする問題点を説明するための図で
ある。 ２・・・半導体チップ、３・・・電極、４・・・リード
、１０・・・銅ワイヤ（金属ワイヤ）、ｌＯａ・・・ボ
ール、１３・・・不活性ガス雰囲気。 なお図中同一符号は同−又は相当部分を示す。1 to 3 are diagrams schematically showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 1(a), (
b) is a diagram showing the state during arc discharge and after ball formation, and FIG. 2 is a diagram showing the state in the middle of ball bonding,
FIG. 3 is a diagram showing the state after ball bonding, FIGS. 4(a) to (d) are schematic diagrams each showing the conventional method, and FIG. 5 is a diagram for explaining the problem to be solved by the invention. It is a diagram. 2... Semiconductor chip, 3... Electrode, 4... Lead, 10... Copper wire (metal wire), lOa... Ball, 13... Inert gas atmosphere. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] （１）半導体チップ上の電極とリードとを金属ワイヤを
用いて結線する半導体装置の製造方法において、 不活性ガス雰囲気中で、金属ワイヤの先端にボールを形
成するとともに該ボールを半導体チップ上の電極にボン
ディングすることを特徴とする半導体装置の製造方法。(1) In a method for manufacturing a semiconductor device in which an electrode on a semiconductor chip and a lead are connected using a metal wire, a ball is formed at the tip of the metal wire in an inert gas atmosphere, and the ball is connected to the lead on the semiconductor chip. A method for manufacturing a semiconductor device characterized by bonding to an electrode.
JP60278646A 1985-12-10 1985-12-10 Manufacture of semiconductor device Pending JPS62136835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278646A JPS62136835A (en) 1985-12-10 1985-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278646A JPS62136835A (en) 1985-12-10 1985-12-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS62136835A true JPS62136835A (en) 1987-06-19

Family

ID=17600178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278646A Pending JPS62136835A (en) 1985-12-10 1985-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62136835A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
JP2007294975A (en) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc System of reducing oxidation for use in wire bonding
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP2012504317A (en) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． Gas delivery system for reducing oxidation in wire bonding operations
CN102554526A (en) * 2012-01-18 2012-07-11 福建福顺半导体制造有限公司 Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395037A (en) * 1992-04-22 1995-03-07 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
JP2007294975A (en) * 2006-04-26 2007-11-08 Kulicke & Soffa Industries Inc System of reducing oxidation for use in wire bonding
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
JP2012504317A (en) * 2008-06-10 2012-02-16 クリック アンド ソッファ インダストリーズ、インク． Gas delivery system for reducing oxidation in wire bonding operations
CN102554526A (en) * 2012-01-18 2012-07-11 福建福顺半导体制造有限公司 Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof

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