CN102554526A - Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof - Google Patents
Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof Download PDFInfo
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- CN102554526A CN102554526A CN2012100153775A CN201210015377A CN102554526A CN 102554526 A CN102554526 A CN 102554526A CN 2012100153775 A CN2012100153775 A CN 2012100153775A CN 201210015377 A CN201210015377 A CN 201210015377A CN 102554526 A CN102554526 A CN 102554526A
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- Prior art keywords
- copper
- ball
- wire bonding
- copper cash
- semiconductor devices
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a copper ball protection method for copper wire bonding of a semiconductor device. The copper ball protection method comprises mounting a capillary tube on one side of an ignition device of a wire bonding machine; aligning the capillary tube to an ignition and ball sintering position; applying high-voltage discharge to a copper wire to melt the tip end of the copper wire to a ball due to the high voltage; and blowing hydrogen-nitrogen mixture gas from the capillary tube so as to isolate the copper ball from air and prevent oxidation of the copper ball. The protection device comprises a hydrogen and nitrogen mixing device, wherein the mixture gas output end of the hydrogen and nitrogen mixing device is connected with the capillary tube arranged on the side of the ignition device of the wire bonding machine through a connection air pipe; and the capillary tube is connected with the ignition device of the wire bonding machine through a fixing base. The protection method not only solves the technical problem of copper wire oxidation of the semiconductor device to realize copper wire bonding of the semiconductor device, but also has the advantages of simple step and easy implementation. The protection device has simple structure and good use effect, and facilitates better copper wire bonding.
Description
Technical field
The present invention relates to a kind of semiconductor devices copper cash welding copper ball guard method and protective device thereof.
Background technology
Being connected of the chip of semiconductor devices and pin, adopted the gold thread mode in the past basically, but rose violently with international price of gold, the cost proportion of the shared semiconductor devices of gold thread also increases a lot thereupon, causes the device manufacturing cost high, influences enterprise competitiveness.The problem of pendulum in face of the enterprise is that how to go out performance with other cheap wire production better, and the lower semiconductor devices of cost is change extremely important just, and copper cash conducts electricity very well because of it; Can form common key welding with aluminium; Become a kind of gold thread that well substitutes and select, but copper cash meeting oxidation in the high voltage arc forming process, hardness uprises thereupon; Spherical bad, can cause damage to the chip pad structure.How to make not oxidation of ball, spherical well become one and very important must overcome problem.
Summary of the invention
The present invention provides a kind of semiconductor devices copper cash welding copper ball guard method and protective device thereof; This guard method has not only overcome semiconductor devices and has adopted the oxidized technical barrier of copper cash meeting; Make semiconductor devices adopt copper cash to be welded into a kind of possibility, and step is simple, realizes easily.This protective device is simple in structure, helps copper cash and better welds, and result of use is good.
Technical program of the present invention lies in: the guard method of a kind of semiconductor devices copper cash welding copper ball; It is characterized in that: at bonding equipment ignition device side capillary is installed, and is made capillary let drive at the baked wheaten cake ball position, when high pressure discharges to copper cash; Balling-up is melted because of high pressure in the copper cash tip; Capillary blows out hydrogen nitrogen mixed gas simultaneously, so that copper ball and air separate, avoids oxidized.
The volume ratio of above-mentioned each component of hydrogen nitrogen mixed gas is: N
2: H
2=90 ~ 95:5 ~ 10.As a kind of preferred version, the volume ratio of said each component of hydrogen nitrogen mixed gas is: N
2: H
2=95:5.
Another technical scheme of the present invention is: a kind of semiconductor devices copper cash welding copper ball protective device; It is characterized in that: this protective device comprises hydrogen nitrogen mixing air distributing device; The gaseous mixture output of said hydrogen nitrogen mixing air distributing device is connected with the capillary that is arranged on bonding equipment ignition device side through connecting tracheae, and said capillary is connected through holder and bonding equipment ignition device.
Also be provided with flowmeter on the above-mentioned connection tracheae.
The volume ratio of above-mentioned each component of hydrogen nitrogen mixed gas is: N
2: H
2=90 ~ 95:5 ~ 10.As a kind of preferred version, the volume ratio of said each component of hydrogen nitrogen mixed gas is: N
2: H
2=95:5.
The invention has the advantages that: this guard method has solved the technical bottleneck that semiconductor devices only adopts gold thread to weld; Overcome semiconductor devices and adopted the oxidized technical barrier of copper cash meeting; Make semiconductor devices adopt copper cash to be welded into a kind of possibility; Reduce the manufacturing cost of semiconductor devices, improved economic benefit of enterprises, had high market value; In addition, this guard method step is simple, is convenient to realize.This protective device is simple in structure, helps copper cash and better welds, and result of use is good.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1.
Among the figure: 1 hydrogen nitrogen mixing air distributing device 2 connects tracheae 3 bonding equipment ignition devices 4 capillaries 5 holders 6 flowmeters.
The specific embodiment
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs., elaborates as follows.
Semiconductor devices copper cash welding copper ball of the present invention guard method; At bonding equipment ignition device side capillary is installed, and is made capillary let drive at the baked wheaten cake ball position, when high pressure discharges to copper cash; Balling-up is melted because of high pressure in the copper cash tip; Capillary blows out hydrogen nitrogen mixed gas simultaneously, so that copper ball and air separate, avoids oxidized.
The volume ratio of above-mentioned each component of hydrogen nitrogen mixed gas is: N
2: H
2=90 ~ 95:5 ~ 10.As a kind of preferred version, the volume ratio of said each component of hydrogen nitrogen mixed gas is: N
2: H
2=95:5.
Referring to accompanying drawing 1; Semiconductor devices copper cash welding copper ball protective device of the present invention; This protective device comprises hydrogen nitrogen mixing air distributing device 1; The gaseous mixture output of said hydrogen nitrogen mixing air distributing device 1 is connected with the capillary 4 that is arranged on bonding equipment ignition device 3 sides through connecting tracheae 2, and said capillary 4 is connected through holder 5 and bonding equipment ignition device 3.Holder 5 described here is a fixing and mounting bracket.
Also be provided with flowmeter 6 on the above-mentioned connection tracheae 2.
The volume ratio of above-mentioned each component of hydrogen nitrogen mixed gas is: N
2: H
2=90 ~ 95:5 ~ 10.As a kind of preferred version, the volume ratio of said each component of hydrogen nitrogen mixed gas is: N
2: H
2=95:5.
The present invention does not limit to above-mentioned preferred forms, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (5)
1. semiconductor devices copper cash welding copper ball guard method; It is characterized in that: at bonding equipment ignition device side capillary is installed, and is made capillary let drive at the baked wheaten cake ball position, when high pressure discharges to copper cash; Balling-up is melted because of high pressure in the copper cash tip; Capillary blows out hydrogen nitrogen mixed gas simultaneously, so that copper ball and air separate, avoids oxidized.
2. semiconductor devices copper cash welding copper ball according to claim 1 guard method, it is characterized in that: the volume ratio of said each component of hydrogen nitrogen mixed gas is: N
2: H
2=90 ~ 95:5 ~ 10.
3. a semiconductor devices copper cash welds the copper ball protective device; It is characterized in that: this protective device comprises hydrogen nitrogen mixing air distributing device; The gaseous mixture output of said hydrogen nitrogen mixing air distributing device is connected with the capillary that is arranged on bonding equipment ignition device side through connecting tracheae, and said capillary is connected through holder and bonding equipment ignition device.
4. semiconductor devices copper cash welding copper ball protective device according to claim 3 is characterized in that: also be provided with flowmeter on the said connection tracheae.
5. semiconductor devices copper cash welding copper ball protective device according to claim 3, it is characterized in that: the volume ratio of each component of hydrogen nitrogen mixed gas of said hydrogen nitrogen mixing air distributing device output is: N
2: H
2=90 ~ 95:5 ~ 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100153775A CN102554526A (en) | 2012-01-18 | 2012-01-18 | Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100153775A CN102554526A (en) | 2012-01-18 | 2012-01-18 | Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102554526A true CN102554526A (en) | 2012-07-11 |
Family
ID=46401856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100153775A Pending CN102554526A (en) | 2012-01-18 | 2012-01-18 | Copper ball protection method for copper wire bonding of semiconductor device and protection device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102554526A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103537825A (en) * | 2013-11-04 | 2014-01-29 | 力诺瑞特（上海）新能源有限公司 | Copper pipe welding protective gas of medium-temperature heat collector and application |
| CN104511703A (en) * | 2013-09-30 | 2015-04-15 | 北京中电科电子装备有限公司 | Ceramic head and lead wire bonder |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136833A (en) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS62136835A (en) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5395037A (en) * | 1992-04-22 | 1995-03-07 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
| JP2007294975A (en) * | 2006-04-26 | 2007-11-08 | Kulicke & Soffa Industries Inc | System of reducing oxidation for use in wire bonding |
| CN201543975U (en) * | 2009-10-13 | 2010-08-11 | 圣崴科技股份有限公司 | Gas supply device for welding wire equipment |
| CN101862897A (en) * | 2010-02-11 | 2010-10-20 | 深圳市贵鸿达电子有限公司 | Method for bonding copper wire of power device |
| CN201773826U (en) * | 2010-02-11 | 2011-03-23 | 深圳市贵鸿达电子有限公司 | Copper wire bonding equipment for power device |
| CN202498315U (en) * | 2012-01-18 | 2012-10-24 | 福建福顺半导体制造有限公司 | Copper wire welding cooper ball protection apparatus for semiconductor devices |
-
2012
- 2012-01-18 CN CN2012100153775A patent/CN102554526A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136833A (en) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS62136835A (en) * | 1985-12-10 | 1987-06-19 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| US5395037A (en) * | 1992-04-22 | 1995-03-07 | Rohm Co., Ltd. | Method and apparatus for performing wire bonding by using solder wire |
| JP2007294975A (en) * | 2006-04-26 | 2007-11-08 | Kulicke & Soffa Industries Inc | System of reducing oxidation for use in wire bonding |
| CN201543975U (en) * | 2009-10-13 | 2010-08-11 | 圣崴科技股份有限公司 | Gas supply device for welding wire equipment |
| CN101862897A (en) * | 2010-02-11 | 2010-10-20 | 深圳市贵鸿达电子有限公司 | Method for bonding copper wire of power device |
| CN201773826U (en) * | 2010-02-11 | 2011-03-23 | 深圳市贵鸿达电子有限公司 | Copper wire bonding equipment for power device |
| CN202498315U (en) * | 2012-01-18 | 2012-10-24 | 福建福顺半导体制造有限公司 | Copper wire welding cooper ball protection apparatus for semiconductor devices |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104511703A (en) * | 2013-09-30 | 2015-04-15 | 北京中电科电子装备有限公司 | Ceramic head and lead wire bonder |
| CN104511703B (en) * | 2013-09-30 | 2017-02-15 | 北京中电科电子装备有限公司 | Ceramic head and lead wire bonder |
| CN103537825A (en) * | 2013-11-04 | 2014-01-29 | 力诺瑞特（上海）新能源有限公司 | Copper pipe welding protective gas of medium-temperature heat collector and application |
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Application publication date: 20120711 |