JPH11260855A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH11260855A JPH11260855A JP10059427A JP5942798A JPH11260855A JP H11260855 A JPH11260855 A JP H11260855A JP 10059427 A JP10059427 A JP 10059427A JP 5942798 A JP5942798 A JP 5942798A JP H11260855 A JPH11260855 A JP H11260855A
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- bonding
- wire
- semiconductor device
- metal wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05557—Shape in side view comprising protrusions or indentations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
- H01L2224/05558—Shape in side view conformal layer on a patterned surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4845—Details of ball bonds
- H01L2224/48451—Shape
- H01L2224/48453—Shape of the interface with the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置に関
し、特に、ワイヤーボンド接続により金属細線を接合す
るためのボンディングパッドが半導体基板上に形成され
ている半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor device in which bonding pads for bonding thin metal wires by wire bonding are formed on a semiconductor substrate.
【０００２】[0002]
【従来の技術】半導体素子の高集積化に伴い、チップの
周辺に形成されている電極であるボンディングパッドの
サイズ（電極面積）も小さくなってきている。その結
果、ボンディングパッドと金属細線（ボンディングワイ
ヤー）との間で充分な接続強度を得ることが難しくなっ
てきている。2. Description of the Related Art As semiconductor devices become more highly integrated, the size (electrode area) of bonding pads, which are electrodes formed on the periphery of a chip, is becoming smaller. As a result, it has become difficult to obtain a sufficient connection strength between the bonding pad and the thin metal wire (bonding wire).
【０００３】このような問題を解決し、ボンディングパ
ッドと金属細線との間の接合面積を増やし、接合強度を
増加させることを目的とする従来の半導体装置として
は、例えば、特開平６−３７１３５号公報（発明の名
称：半導体装置、出願日：１９９２年７月２０日、図４
参照）に示すようなものがある。A conventional semiconductor device for solving such a problem, increasing the bonding area between a bonding pad and a thin metal wire and increasing the bonding strength is disclosed, for example, in Japanese Patent Application Laid-Open No. 6-37135. Publication (Title of Invention: Semiconductor Device, Filing Date: July 20, 1992, FIG. 4)
Reference).
【０００４】すなわち、従来技術では、半導体基板２上
のボンディングパッド５がボンディングワイヤー７と接
着させる面である接着面に凹凸９を形成していた。この
ような凹凸９は、半導体基板２の表面にエッチングによ
って複数の溝９ａ，…，９ａを刻み込むことによって形
成されていた。That is, in the prior art, the bumps 9 are formed on the bonding surface on which the bonding pads 5 on the semiconductor substrate 2 are bonded to the bonding wires 7. Such irregularities 9 are formed by etching a plurality of grooves 9a,..., 9a on the surface of the semiconductor substrate 2 by etching.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の半導体装置では、ボンディングパッドと金属
細線（ボンディングワイヤー）との間で充分な接続強度
を得るための凹凸９を、半導体基板２の表面にエッチン
グによって複数の溝９ａ，…，９ａを刻み込むことによ
って形成するため、半導体装置の製造プロセスが増えて
しまい、その結果、プロセスコストが増加してしまうと
いう問題点があった。However, in such a conventional semiconductor device, unevenness 9 for obtaining a sufficient connection strength between the bonding pad and the thin metal wire (bonding wire) is formed on the surface of the semiconductor substrate 2. Since the grooves 9a are formed by engraving a plurality of grooves 9a by etching, the manufacturing process of the semiconductor device increases, and as a result, the process cost increases.
【０００６】また、エッチングによって刻み込み可能な
溝９ａ，…，９ａの深さは０．１μｍ程度であり、この
ような深さの溝では、ボンディングパッドと金属細線と
の間で充分な接続強度を得ることが難しいという問題点
もあった。Further, the depth of the grooves 9a,..., 9a that can be cut by etching is about 0.1 μm, and the grooves having such a depth have sufficient connection strength between the bonding pad and the fine metal wire. There was also a problem that it was difficult to obtain.
【０００７】本発明は、このような従来の問題点を解決
することを課題としており、特に、ボンディングパッド
の周縁部を突出させ、金属細線の先端部分に周縁部の側
壁面が沿うようにし、金属細線とボンディングパッドの
接合面積を増やし、接合強度を増加させることを課題と
している。An object of the present invention is to solve such a conventional problem. In particular, a peripheral portion of a bonding pad is protruded so that a side wall surface of the peripheral portion follows a tip portion of a thin metal wire. It is an object to increase a bonding area between a metal thin wire and a bonding pad to increase bonding strength.
【０００８】[0008]
【課題を解決するための手段】上記課題を解決するため
本発明により成された請求項１に記載の発明は、ワイヤ
ーボンド接続により金属細線１４を接合するためのボン
ディングパッド１２が半導体基板１１上に形成されてい
る半導体装置において、ボンディングパッド１２の周縁
部１２２が中央部１２４よりも突出した凹構造１６とな
っている半導体装置１０である。According to the first aspect of the present invention, which has been made to solve the above-mentioned problems, a bonding pad 12 for bonding a thin metal wire 14 by wire bonding is provided on a semiconductor substrate 11. Is a semiconductor device 10 in which a peripheral portion 122 of a bonding pad 12 has a concave structure 16 protruding from a central portion 124.
【０００９】請求項１に記載の発明によれば、ボンディ
ングパッド１２の周縁部１２２を突出させ、金属細線１
４の先端部分に周縁部１２２の側壁面が沿うようにする
ことにより、金属細線１４とボンディングパッド１２の
実効的な接合面積を増やすことができるようになり、そ
の結果、金属細線１４とボンディングパッド１２との接
合強度を増加させることができるようになる。According to the first aspect of the present invention, the peripheral portion 122 of the bonding pad 12 is made to protrude, and
By making the side wall surface of the peripheral portion 122 along the front end portion of the metal wire 4, the effective bonding area between the fine metal wire 14 and the bonding pad 12 can be increased. As a result, the fine metal wire 14 and the bonding pad can be increased. 12 can be increased.
【００１０】また請求項２に記載の発明は、請求項１に
記載の半導体装置１０において、前記ボンディングパッ
ド１２の凹構造１６の周縁形状が金属細線１４の形状に
応じた凹形状になっている半導体装置１０である。According to a second aspect of the present invention, in the semiconductor device according to the first aspect, a peripheral shape of the concave structure of the bonding pad is a concave shape corresponding to a shape of the thin metal wire. The semiconductor device 10.
【００１１】請求項２に記載の発明によれば、請求項１
に記載の効果に加えて、ボンディングパッド１２と金属
細線１４を接合する際に、ボンディングパッド１２の凹
構造１６の周縁部１２２に金属細線１４の先端線外周部
分が有効に接触するので、金属細線１４とボンディング
パッド１２の実効的な接合面積を増やすことができるよ
うになり、その結果、金属細線１４とボンディングパッ
ド１２との接合強度を増加させることができるようにな
る。According to the invention described in claim 2, according to claim 1,
In addition to the effects described in (1), when the bonding pad 12 and the thin metal wire 14 are joined, the outer peripheral portion of the distal end line of the thin metal wire 14 effectively contacts the peripheral edge 122 of the concave structure 16 of the bonding pad 12. The effective bonding area between the bonding pad 14 and the bonding pad 12 can be increased, and as a result, the bonding strength between the fine metal wire 14 and the bonding pad 12 can be increased.
【００１２】また請求項３に記載の発明は、請求項１に
記載の半導体装置１０において、前記ボンディングパッ
ド１２は、接合時の金属細線１４の側面１４２が前記凹
構造１６の側壁１６２に接合されるような構造となって
いる請求項１に記載の半導体装置１０である。According to a third aspect of the present invention, in the semiconductor device according to the first aspect, the bonding pad is formed such that a side surface of the thin metal wire at the time of bonding is bonded to a side wall of the concave structure. The semiconductor device 10 according to claim 1 having a structure as described above.
【００１３】請求項３に記載の発明によれば、請求項１
に記載の効果に加えて、ボンディングパッド１２と金属
細線１４を接合する際に、ボンディングパッド１２の凹
構造１６の周縁部１２２に金属細線１４の側面１４２の
部分が有効に接触するので、金属細線１４とボンディン
グパッド１２の実効的な接合面積を増やすことができる
ようになり、その結果、金属細線１４とボンディングパ
ッド１２との接合強度を増加させることができるように
なる。According to the third aspect of the present invention, the first aspect is provided.
In addition to the effects described in (1), when the bonding pad 12 and the thin metal wire 14 are joined, the portion of the side surface 142 of the thin metal wire 14 effectively contacts the peripheral edge 122 of the concave structure 16 of the bonding pad 12, so that the thin metal wire 14 The effective bonding area between the bonding pad 14 and the bonding pad 12 can be increased, and as a result, the bonding strength between the fine metal wire 14 and the bonding pad 12 can be increased.
【００１４】また請求項４に記載の発明は、請求項１に
記載の半導体装置１０において、前記ボンディングパッ
ド１２は、見かけ上のボール径Ｄと実際のボール径ｄと
の差分２Ｒに応じて、金属細線１４の側面１４２が前記
凹構造１６の側壁１６２に接合されるような構造となっ
ている半導体装置１０である。According to a fourth aspect of the present invention, in the semiconductor device 10 according to the first aspect, the bonding pad 12 is provided in accordance with a difference 2R between an apparent ball diameter D and an actual ball diameter d. The semiconductor device 10 has a structure in which a side surface 142 of the thin metal wire 14 is joined to a side wall 162 of the concave structure 16.
【００１５】請求項４に記載の発明によれば、請求項１
に記載の効果に加えて、ボンディングパッド１２と金属
細線１４を接合する際に、見かけ上のボール径Ｄと実際
のボール径ｄとの差分２Ｒに応じて、金属細線１４の側
面１４２がボンディングパッド１２の凹構造１６の周縁
部１２２に有効に接触するので、金属細線１４とボンデ
ィングパッド１２の実効的な接合面積を増やすことがで
きるようになり、その結果、金属細線１４とボンディン
グパッド１２との接合強度を増加させることができるよ
うになる。According to the invention described in claim 4, according to claim 1 of the present invention,
In addition to the effects described in (1), when the bonding pad 12 and the metal fine wire 14 are joined, the side surface 142 of the metal fine wire 14 is attached to the bonding pad according to the difference 2R between the apparent ball diameter D and the actual ball diameter d. Since the effective contact area between the fine metal wire 14 and the bonding pad 12 can be increased, the effective contact area between the fine metal wire 14 and the bonding pad 12 can be increased. The joining strength can be increased.
【００１６】[0016]
【発明の実施の形態】図１は、本発明の半導体装置１０
におけるボンディングパッド１２と金属細線１４とのワ
イヤーボンド接続形態を説明するための図である。FIG. 1 shows a semiconductor device 10 according to the present invention.
FIG. 4 is a diagram for explaining a wire bond connection mode between the bonding pad 12 and the thin metal wire 14 in FIG.
【００１７】本実施形態の半導体装置１０は、ワイヤー
ボンド接続により金属細線１４を接合するための電極で
あるボンディングパッド１２が半導体基板１１上に複数
個だけ形成されている半導体デバイスである。以下の説
明では、このような半導体装置１０を半導体チップ１０
と呼ぶことにする。The semiconductor device 10 of the present embodiment is a semiconductor device in which only a plurality of bonding pads 12, which are electrodes for bonding the thin metal wires 14 by wire bonding, are formed on the semiconductor substrate 11. In the following description, such a semiconductor device 10 is referred to as a semiconductor chip 10
I will call it.
【００１８】本実施形態の金属細線１４は、ワイヤーボ
ンド接続用の導電性リードであって、通常、数１０μｍ
径〜数１００μｍ径の金（元素記号：Ａｕ）製のワイヤ
ーが用いられる。以下の説明では、このような金属細線
１４をＡｕワイヤー１４と呼ぶことにする。The thin metal wire 14 of this embodiment is a conductive lead for wire bond connection, and is usually several tens μm.
A wire made of gold (element symbol: Au) having a diameter of several to several hundred μm is used. In the following description, such a thin metal wire 14 will be referred to as an Au wire 14.
【００１９】ボンディングパッド１２の各々は、図１に
示すように、ワイヤーボンド接続箇所以外の表面を保護
膜として機能するパッシベーション膜１７で覆われてお
り、その周縁部１２２が中央部１２４よりも突出した凹
構造１６となっている。As shown in FIG. 1, each of the bonding pads 12 is covered with a passivation film 17 functioning as a protective film on the surface other than the wire bond connection portion, and its peripheral portion 122 projects beyond the central portion 124. The concave structure 16 is formed.
【００２０】具体的には、凹構造１６の周縁部１２２が
中央部１２４よりも０．１μｍ程度だけ突出している。
また、凹構造１６の中央部１２４を含む底面部分付近
は、平坦な構造にしている。なお、底面部分付近を凸凹
構造（いわゆる、コルゲート（corrugate）構造）にす
ることも可能である。More specifically, the peripheral portion 122 of the concave structure 16 protrudes from the central portion 124 by about 0.1 μm.
Further, the vicinity of the bottom surface including the central portion 124 of the concave structure 16 has a flat structure. In addition, it is also possible to make the vicinity of the bottom surface into an uneven structure (a so-called corrugate structure).
【００２１】このように、ボンディングパッド１２の周
縁部１２２を突出させ、Ａｕワイヤー１４のボール状の
先端部分に周縁部１２２の側壁面が沿うようにすること
により、Ａｕワイヤー１４とボンディングパッド１２の
実効的な接合面積を増やすことができるようになり、そ
の結果、Ａｕワイヤー１４とボンディングパッド１２と
の接合強度を増加させることができるようになる。As described above, by projecting the peripheral portion 122 of the bonding pad 12 so that the side wall surface of the peripheral portion 122 follows the ball-shaped tip portion of the Au wire 14, the Au wire 14 and the bonding pad 12 are formed. The effective bonding area can be increased, and as a result, the bonding strength between the Au wire 14 and the bonding pad 12 can be increased.
【００２２】また本実施形態では、図１に示すように、
ボンディングパッド１２の凹構造１６の周縁形状をＡｕ
ワイヤー１４のボール形状に応じた凹形状に設定してい
る。In this embodiment, as shown in FIG.
The peripheral shape of the concave structure 16 of the bonding pad 12 is Au
The concave shape is set according to the ball shape of the wire 14.
【００２３】これにより、ボンディングパッド１２とＡ
ｕワイヤー１４を接合する際に、ボンディングパッド１
２の凹構造１６の周縁部１２２にＡｕワイヤー１４のボ
ール形状の先端線外周部分が有効に接触するので、Ａｕ
ワイヤー１４とボンディングパッド１２の実効的な接合
面積を増やすことができるようになり、その結果、Ａｕ
ワイヤー１４とボンディングパッド１２との接合強度を
増加させることができるようになる。Thus, the bonding pads 12 and A
When bonding the u-wire 14, the bonding pad 1
Since the outer peripheral portion of the ball-shaped tip wire of the Au wire 14 effectively contacts the peripheral portion 122 of the second concave structure 16, Au
The effective bonding area between the wire 14 and the bonding pad 12 can be increased, and as a result, Au
The bonding strength between the wire 14 and the bonding pad 12 can be increased.
【００２４】また本実施形態では、図１に示すように、
ボンディングパッド１２の各々を、接合時のＡｕワイヤ
ー１４の側面１４２が凹構造１６の側壁１６２に接合さ
れるような構造に設定している。In this embodiment, as shown in FIG.
Each of the bonding pads 12 has a structure such that the side surface 142 of the Au wire 14 at the time of bonding is bonded to the side wall 162 of the concave structure 16.
【００２５】これにより、ボンディングパッド１２とＡ
ｕワイヤー１４を接合する際に、ボンディングパッド１
２の凹構造１６の周縁部１２２にＡｕワイヤー１４の側
面１４２の部分が有効に接触するので、Ａｕワイヤー１
４とボンディングパッド１２の実効的な接合面積を増や
すことができるようになり、その結果、Ａｕワイヤー１
４とボンディングパッド１２との接合強度を増加させる
ことができるようになる。Thus, the bonding pads 12 and A
When bonding the u-wire 14, the bonding pad 1
Since the portion of the side surface 142 of the Au wire 14 effectively contacts the peripheral portion 122 of the second concave structure 16, the Au wire 1
4 and the bonding pad 12 can be increased in effective bonding area.
4 and the bonding pad 12 can be increased in bonding strength.
【００２６】更に詳しく、本実施形態のボンディングパ
ッド１２の構造を説明する。The structure of the bonding pad 12 of this embodiment will be described in more detail.
【００２７】図２は、図１におけるＡｕワイヤー１４の
接合部分の寸法を説明するための図であり、図３は、図
１におけるＡｕワイヤー１４の接合部分の拡大図であ
る。FIG. 2 is a view for explaining the dimensions of the joint portion of the Au wire 14 in FIG. 1, and FIG. 3 is an enlarged view of the joint portion of the Au wire 14 in FIG.
【００２８】ワイヤーボンド接続用のボンディングパッ
ド１２においては、図２に示すように、見かけ上のボー
ル径Ｄ（具体的には、Ａｕワイヤー１４の直径を２０μ
ｍとした場合、６０〜９０μｍ□程度）に対し、実際に
ボンディングパッド１２に接触している部分がボール径
ｄ程度に狭まってしまうという現象が頻出する。In the bonding pad 12 for wire bond connection, as shown in FIG. 2, the apparent ball diameter D (specifically, the diameter of the Au wire 14 is 20 μm).
(when m is about 60 to 90 μm square), a phenomenon that the portion actually in contact with the bonding pad 12 is reduced to about the ball diameter d frequently occurs.
【００２９】このような見かけ上のボール径Ｄと実際の
ボール径ｄとの差分２Ｒを小さくするために、ボール厚
ｔ（具体的には、Ａｕワイヤー１４の直径を２０μｍと
した場合、５〜２０μｍ程度）を小さくすることが行わ
れているが、自ずと限界を生じる。To reduce the difference 2R between the apparent ball diameter D and the actual ball diameter d, the ball thickness t (specifically, when the diameter of the Au wire 14 is 20 μm, 5 to 5 (Approximately 20 μm) has been reduced, but a limit is naturally created.
【００３０】そこで本実施形態では、ボンディングパッ
ド１２の各々を、見かけ上のボール径Ｄと実際のボール
径ｄとの差分２Ｒに応じて、Ａｕワイヤー１４の側面１
４２が凹構造１６の側壁１６２に接合されるような構造
としている。Therefore, in this embodiment, each of the bonding pads 12 is connected to the side surface 1 of the Au wire 14 according to the difference 2R between the apparent ball diameter D and the actual ball diameter d.
42 is joined to the side wall 162 of the concave structure 16.
【００３１】具体的には、図３に示すように、見かけ上
のボール径Ｄと実際のボール径ｄとの差分２Ｒのボンデ
ィングパッド１２も接合されるように、ボンディングパ
ッド１２の周縁部１２２を、Ａｕワイヤー１４のボール
形状にならうように凹構造１６の中央部１２４よりも突
出させている。More specifically, as shown in FIG. 3, the peripheral portion 122 of the bonding pad 12 is bonded so that the bonding pad 12 having a difference 2R between the apparent ball diameter D and the actual ball diameter d is also bonded. , From the central portion 124 of the concave structure 16 so as to follow the ball shape of the Au wire 14.
【００３２】これにより、図３に示すように、ボール径
ｄに近い接触面積が得られるようになるので、Ａｕワイ
ヤー１４とボンディングパッド１２の実効的な接合面積
を増やすことができるようになり、その結果、Ａｕワイ
ヤー１４とボンディングパッド１２との接合強度を増加
させることができるようになる。As a result, as shown in FIG. 3, a contact area close to the ball diameter d can be obtained, so that the effective bonding area between the Au wire 14 and the bonding pad 12 can be increased. As a result, the bonding strength between the Au wire 14 and the bonding pad 12 can be increased.
【００３３】[0033]
【発明の効果】本発明にかかる半導体装置によれば、ボ
ンディングパッドと金属細線を接合する際に、金属細線
の先端線径が有効に接触するので、接合面積を増大する
ことができるようになり、その結果、接合強度の改善を
図ることができるようになる。According to the semiconductor device of the present invention, when the bonding pad and the fine metal wire are bonded, the diameter of the tip end of the fine metal wire is in effective contact, so that the bonding area can be increased. As a result, the joint strength can be improved.
【図１】本発明の半導体装置におけるボンディングパッ
ドと金属細線とのワイヤーボンド接続形態を説明するた
めの図である。FIG. 1 is a diagram for explaining a wire bond connection mode between a bonding pad and a thin metal wire in a semiconductor device of the present invention.
【図２】図１における金属細線の接合部分の寸法を説明
するための図である。FIG. 2 is a view for explaining dimensions of a joining portion of a thin metal wire in FIG. 1;
【図３】図１における金属細線の接合部分の拡大図であ
る。FIG. 3 is an enlarged view of a joining portion of a thin metal wire in FIG. 1;
【図４】従来の半導体装置を示す断面図である。FIG. 4 is a sectional view showing a conventional semiconductor device.
１０…半導体装置 １１…半導体基板 １２…ボンディングパッド １２２…ボンディングパッドの周縁部 １２４…ボンディングパッドの中央部 １４…金属細線 １４２…接合時の金属細線の側面 １６…凹構造 １６２…凹構造の側壁 Ｄ…見かけ上のボール径 ｄ…実際のボール径 ２Ｒ…見かけ上のボール径と実際のボール径との差分 DESCRIPTION OF SYMBOLS 10 ... Semiconductor device 11 ... Semiconductor substrate 12 ... Bonding pad 122 ... Peripheral part of bonding pad 124 ... Central part of bonding pad 14 ... Thin metal wire 142 ... Side surface of thin metal wire at the time of joining 16 ... Concave structure 162 ... Side wall of concave structure D ... apparent ball diameter d ... actual ball diameter 2R ... difference between apparent ball diameter and actual ball diameter
Claims (4)
合するためのボンディングパッドが半導体基板上に形成
されている半導体装置において、 ボンディングパッドの周縁部が中央部よりも突出した凹
構造となっていることを特徴とする半導体装置。1. A semiconductor device in which a bonding pad for bonding a thin metal wire by a wire bond connection is formed on a semiconductor substrate, wherein a peripheral portion of the bonding pad has a concave structure protruding from a central portion. A semiconductor device characterized by the above-mentioned.
形状が金属細線の形状に応じた凹形状になっていること
を特徴とする請求項１に記載の半導体装置。2. The semiconductor device according to claim 1, wherein a peripheral edge of the concave structure of the bonding pad has a concave shape corresponding to a shape of a thin metal wire.
属細線の側面が前記凹構造の側壁に接合されるような構
造となっていることを特徴とする請求項１に記載の半導
体装置。3. The semiconductor device according to claim 1, wherein the bonding pad has a structure in which a side surface of the thin metal wire at the time of bonding is bonded to a side wall of the concave structure.
ボール径と実際のボール径との差分に応じた凹形状を有
する金属細線の側面が前記凹構造の側壁に接合されるよ
うな構造となっていることを特徴とする請求項１に記載
の半導体装置。4. The bonding pad has a structure in which a side surface of a fine metal wire having a concave shape corresponding to a difference between an apparent ball diameter and an actual ball diameter is joined to a side wall of the concave structure. The semiconductor device according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10059427A JPH11260855A (en) | 1998-03-11 | 1998-03-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10059427A JPH11260855A (en) | 1998-03-11 | 1998-03-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11260855A true JPH11260855A (en) | 1999-09-24 |
Family
ID=13112965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10059427A Withdrawn JPH11260855A (en) | 1998-03-11 | 1998-03-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11260855A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447794A (en) * | 2017-01-24 | 2018-08-24 | 丰田自动车株式会社 | Semiconductor device and its manufacturing method |
| CN112117268A (en) * | 2020-09-25 | 2020-12-22 | 中科芯(苏州)微电子科技有限公司 | Chip integrated module |
-
1998
- 1998-03-11 JP JP10059427A patent/JPH11260855A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447794A (en) * | 2017-01-24 | 2018-08-24 | 丰田自动车株式会社 | Semiconductor device and its manufacturing method |
| CN112117268A (en) * | 2020-09-25 | 2020-12-22 | 中科芯(苏州)微电子科技有限公司 | Chip integrated module |
| CN112117268B (en) * | 2020-09-25 | 2023-02-10 | 中科芯(苏州)微电子科技有限公司 | Chip integrated module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2931741B2 (en) | Semiconductor device | |
| JPH0238446Y2 (en) | ||
| JPH05218127A (en) | Semiconductor device and manufacture thereof | |
| JPH11260855A (en) | Semiconductor device | |
| JPH04155854A (en) | Semiconductor integrated circuit device and lead frame therefor | |
| JP2980447B2 (en) | Semiconductor device and capillary for manufacturing semiconductor device | |
| JPH0982742A (en) | Wire bonding method | |
| JP2007281182A (en) | Resin-sealed semiconductor device | |
| JPH06333974A (en) | Bonding pad structure of integrated circuit | |
| JPH056893A (en) | Capillary, manufacture of bump thereby and semiconductor device thereby | |
| JPH05267385A (en) | Wire bonding apparatus | |
| JPH02237119A (en) | Formation of bump electrode | |
| JPS63120431A (en) | Semiconductor device for electric power | |
| JPH04255237A (en) | Manufacture of semiconductor device | |
| JP3202193B2 (en) | Wire bonding method | |
| JPH06120290A (en) | Semiconductor device | |
| JPH0529404A (en) | Tool for bonding of al wiring lead | |
| JPS63239852A (en) | Semiconductor device | |
| JPH098202A (en) | Lead frame for integrated circuit | |
| JP2788885B2 (en) | Lead frame for semiconductor device and semiconductor device | |
| JPH05291364A (en) | Semiconductor device | |
| JPH04196236A (en) | Connecting method | |
| JPH0310670Y2 (en) | ||
| JP2739797B2 (en) | TAB type semiconductor device | |
| JPH11288960A (en) | Wire-bonding connection and tool for bonding surface removal removal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20050607 |