JPS61125028A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61125028A
JPS61125028A JP59245985A JP24598584A JPS61125028A JP S61125028 A JPS61125028 A JP S61125028A JP 59245985 A JP59245985 A JP 59245985A JP 24598584 A JP24598584 A JP 24598584A JP S61125028 A JPS61125028 A JP S61125028A
Authority
JP
Japan
Prior art keywords
wire
groove
lead
semiconductor device
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59245985A
Other languages
Japanese (ja)
Inventor
Masachika Masuda
正親 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59245985A priority Critical patent/JPS61125028A/en
Publication of JPS61125028A publication Critical patent/JPS61125028A/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To connect reliably an internal electrode and a wire, by forming a groove longitudinally in the internal electrode surface wire bonded. CONSTITUTION:A groove 8 is formed longitudinally in each lead 3a, at the tip of the lead 3a neighbouring a tab 4, the lead 3a constituting an internal lead at a wire bonding section of a lead frame. The groove 8 has such a reversed tapering shape that the groove width is narrow near the opening surface and is wider as nearer the bottom. The groove 8 and a bonding pad 7 on a pellet 5 are electrically connected by a wire 9 made of gold. This electrical connection using the wire 9 is done as follows: Ball-bonding is done onto the bonding pad 7 lying on the pellet 5 and then the other end of the wire 9 is pressured against the groove 8 section on the lead 3a by the capillary tip while keeping a sufficient wire loop height, so that a portion of wire material can be pressed into the groove 8 to attain the electrical conduction.

Description

【発明の詳細な説明】 本発明は、半導体装置、特に半導体装置内部の電極間結
線に適用して有効な技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a technique that is effective when applied to a semiconductor device, particularly to connection between electrodes inside a semiconductor device.

〔背景技術］ 半導体装置では、リードまたはメタライズからなる内部
電極とベレットとの電気的接続がワイヤボンディングに
よって行われることが広く知られている。[Background Art] It is widely known that in semiconductor devices, electrical connection between internal electrodes made of leads or metallization and pellets is performed by wire bonding.

このとき、リードフレームを用いる半導体装置であれば
、インナーリード部分に金、恨、半田等のメッキが施さ
れることがある。At this time, in the case of a semiconductor device using a lead frame, the inner lead portion may be plated with gold, gold, solder, or the like.

これは、ワイヤとリードの電気的接続を良好ならしめる
ためである。This is to ensure good electrical connection between the wire and the lead.

ところが、メッキを施す際にはインナーリード全体にメ
ッキを施すために、必要となるメッキ量も多く、特にメ
ッキ材料として導電性の良い金を用いた場合にはコスト
高となる。However, when plating is applied, the entire inner lead is plated, so a large amount of plating is required, resulting in high costs, especially when gold, which has good conductivity, is used as the plating material.

ここで、ボンディングに必要な部分にのみメッキを施す
、いわゆるポイントメッキにより、使用するメッキ材を
少量に抑えることが考えられる。Here, it is possible to reduce the amount of plating material used by applying so-called point plating, in which plating is applied only to the areas necessary for bonding.

しかし、ポイントメッキは被着面積が小さいため、メッ
キが剥がれ易いことが本発明者によって明らかにされた
。However, since point plating has a small adhesion area, the inventors have found that the plating easily peels off.

このことから、メッキを用いずにワイヤとり−ドの電気
的接続を確実に行うことの出来る技術が必要であること
が、更に本発明者によって明らかにされたのである。From this, the inventor further clarified that there is a need for a technique that can reliably connect the wire leads without using plating.

また、内部電極がセラミック等のパッケージ上に形成さ
れたメタライズによって形成されている半導体装置にお
いても同様に、電極とワイヤの電気的接続を良好に行う
ことのできる技術が必要であることが本発明者によって
明らかにされた。Furthermore, the present invention also shows that a technology that can make good electrical connections between electrodes and wires is also needed in semiconductor devices in which internal electrodes are formed by metallization formed on a package such as a ceramic. revealed by.

なお、ワイヤを用いた電極間接続の技術として詳しく述
べである例としては、工業調査会、１９８０年１月１５
日発行ｒｌｃ化実装技術」、Ｐ９９〜Ｐ１０３がある。A detailed example of the technology for connecting electrodes using wires is given in Kogyo Kenkyukai, January 15, 1980.
"Issuance RLC Implementation Technology", pages 99 to 103.

［発明の目的］ 本発明の目的は、内部電極とワイヤとの電気的接続を確
実に行うことのできる技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a technique that can ensure electrical connection between internal electrodes and wires.

本発明の他の目的は低コストで信鎖性の高い半導体装置
を提供することにある。Another object of the present invention is to provide a semiconductor device with high reliability at low cost.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、ワイヤボンディングされる内部電極表面の長
さ方向に溝を設けることによって、咳溝にワイヤ先端部
を圧入して内部電極とワイヤとの電気的接続を行い、前
記目的を達成するものである。That is, by providing a groove in the length direction of the surface of the internal electrode to be wire-bonded, the tip of the wire is press-fitted into the groove to electrically connect the internal electrode and the wire, thereby achieving the above object. .

［実施例１］ 第１図は、本発明による一実施例である半導体装置のワ
イヤとリードの接合状態を示す第２図の１−１線拡大部
分断面図である。[Embodiment 1] FIG. 1 is an enlarged partial cross-sectional view taken along the line 1-1 in FIG. 2, showing a bonded state of wires and leads of a semiconductor device according to an embodiment of the present invention.

第２図は、本実施例による半導体装置の全体を示す断面
図である。FIG. 2 is a sectional view showing the entire semiconductor device according to this embodiment.

本実施例の半導体装置１は、エポキシ樹脂等のレジン２
により封止されてなるいわゆるレジンモールド型の半導
体装置であって、たとえば４２アロイや！１Ｍ（ｃｕ）
を含む合金からなるリードフレーム３の中央に形成され
たタブ４の上に／リコン（Ｓ　ｉ）からなるペレット５
がＩＮ（Ａｇ）ペースト６で取付けられている。該ペレ
ット５上にはアルミニウムからなるポンディングパッド
７が形成されている。The semiconductor device 1 of this embodiment is made of resin 2 such as epoxy resin.
It is a so-called resin mold type semiconductor device sealed with, for example, 42 alloy! 1M (cu)
A pellet 5 made of recon (Si) is placed on a tab 4 formed in the center of a lead frame 3 made of an alloy containing
is attached with IN(Ag) paste 6. A bonding pad 7 made of aluminum is formed on the pellet 5.

また、リードフレーム３のワイヤボンディング部である
内部リードを構成する各リード３ａのタブ４よりの先端
にはリード３ａの長さ方向に１１１８が設けられている
。咳溝８は溝幅がリード３ａ表面の開口部付近は狭く、
底部にいくに従って広（なるよう逆テーパ状に形成され
ている。かかる溝形状は凸面を有するパンチでまず溝を
形成した後に凹面のパンチで開口部を狭くプレスするこ
とにより容易に形成できるものである。Furthermore, a groove 1118 is provided in the length direction of the lead 3a at the tip of each lead 3a constituting the internal lead, which is a wire bonding portion of the lead frame 3, from the tab 4. The width of the cough groove 8 is narrow near the opening on the surface of the reed 3a.
The grooves are formed in an inversely tapered shape that widens toward the bottom.Such a groove shape can be easily formed by first forming a groove with a punch with a convex surface, and then pressing the opening narrowly with a punch with a concave surface. be.

この溝８とペレット５上のポンディングパッド７とは金
（Ａｕ）からなるワイヤ９により電気的に接続されてい
る。このワイヤ９による電気的接続は、まずペレット５
上のポンディングパッド７にポールボンディングを行い
、十分なループ高さをとった上でキャピラリ先端部（図
示せず）でワイヤ９の他端をリード３ａ上の該溝８部分
に加圧することによってワイヤ材料の一部を該溝８に圧
入して電気的導通を達成するものである。また、このと
きにワイヤ９の他端を加熱してその一部を溶融せしめて
該溝８との接合を行ってもよい。This groove 8 and the bonding pad 7 on the pellet 5 are electrically connected by a wire 9 made of gold (Au). The electrical connection using this wire 9 is first made using the pellet 5.
By performing pole bonding to the upper bonding pad 7 and ensuring a sufficient loop height, the other end of the wire 9 is pressurized to the groove 8 portion on the lead 3a using the tip of the capillary (not shown). A portion of the wire material is pressed into the groove 8 to achieve electrical continuity. Further, at this time, the other end of the wire 9 may be heated to melt a portion of the wire 9 and join the wire 9 to the groove 8.

このように本実施例によれば、リード３ａがワイヤ９を
咬持した状態で接続が行われているため、リード３ａ上
のワイヤ９との接続部分にメッキを施すことなく信頌性
の高い電気的接続を行うことができる。According to this embodiment, since the connection is made with the lead 3a holding the wire 9, high reliability can be achieved without plating the connection portion of the lead 3a with the wire 9. Electrical connections can be made.

［実施例２］ 第３図は、本発明による他の実施例である半導体装置の
ワイヤとリードの接合状態を示す第４図のｌｌｌ−１１
１線拡大部分断面図である。[Example 2] FIG. 3 shows the connection state of wires and leads of a semiconductor device according to another embodiment of the present invention.
It is a 1-line enlarged partial sectional view.

第４図は、本実施例による半導体装置の全体を示す断面
図である。FIG. 4 is a cross-sectional view showing the entire semiconductor device according to this embodiment.

本実施例による半導体装置１１は、バラケーン基板１２
を低融点ガラス１３を介してキャップＩ４で気密封止し
てなる、いわゆるチップキャリア型の半導体装置である
。The semiconductor device 11 according to this embodiment has a rose cane substrate 12
This is a so-called chip carrier type semiconductor device which is hermetically sealed with a cap I4 through a low melting point glass 13.

セラミックからなる断面コ字状のパッケージ基板１２の
中央部のペレット取付は面にはベレット１５が銀ペース
ト１６で取付けられており、該ベレット】５上面にはア
ルミニウムからなる多数のポンディングフィツト１７が
形成されている。A pellet 15 is attached to the central part of the package substrate 12, which is made of ceramic and has a U-shaped cross section, and a pellet 15 is attached to the surface using silver paste 16, and a large number of bonding fits 17 made of aluminum are provided on the upper surface of the pellet 5. It is formed.

また、ペレット１５周囲のバッケーノ基板１２表面には
Ｍ基板１２の壁面を貫通して該基板１２の側面および裏
面まで延在されてなるメタライズ１８が形成されており
、該メタライズ１８のベレット１５近傍には各メタライ
ズ１８の長さ方向に溝１９が設けられている。Further, a metallization 18 is formed on the surface of the baccano substrate 12 around the pellet 15, penetrating the wall surface of the M substrate 12 and extending to the side and back surfaces of the substrate 12. A groove 19 is provided in the length direction of each metallization 18.

該溝１９はパッケージ基板１２の焼結前に形成しておい
てもよいし、また焼結後に該基板１２の一部をエツチン
グ除去することにより形成してもよい。The groove 19 may be formed before sintering the package substrate 12, or may be formed by etching away a portion of the substrate 12 after sintering.

なお、該１１１１９の内面にもメタライズ１８が形成さ
れている。Note that metallization 18 is also formed on the inner surface of the 11119.

この溝１９とペレット１５上のポンディングパッド１７
とは金（Ａｕ）からなるワイヤ２０により電気的に接続
されている。このワイヤ２０による電気的接続は、まず
ペレット１５上のポンディングパッド１７にウェッジポ
ンディングまたはポールポンディングを行い、十分なル
ープ高さをとった上でキャピラリもしくはウェッジの先
端部（図示せず）でワイヤ２０の他端をメタライズ１日
上の該溝１９部分に加圧することによってワイヤ材料の
一部を接溝１９に正大して電気的導通を達成するもので
ある。また、このときにワイヤ２０他端に超音波振動を
加えれば、メタライズ１８との接合性をさらに高めるこ
とができる。This groove 19 and the pounding pad 17 on the pellet 15
and are electrically connected to each other by a wire 20 made of gold (Au). Electrical connection using the wire 20 is made by first performing wedge bonding or pole bonding on the bonding pad 17 on the pellet 15, and then attaching the capillary or wedge tip (not shown) to the tip of the capillary or wedge after obtaining a sufficient loop height. By pressing the other end of the wire 20 against the groove 19 above the metallization layer, a portion of the wire material is brought into contact with the groove 19 to achieve electrical continuity. Moreover, if ultrasonic vibration is applied to the other end of the wire 20 at this time, the bondability with the metallization 18 can be further improved.

このように本実施例によれば、ワイヤ２０とメタライズ
１８との接触面積を大きくとることができるため、信頼
性の高い接続を行うことができ、さらに接合部の電気抵
抗の低減を図ることもできる。In this way, according to this embodiment, since the contact area between the wire 20 and the metallization 18 can be increased, a highly reliable connection can be made, and the electrical resistance of the joint can also be reduced. can.

［効果］ （１ｊ、内部電極の長さ方向に溝を設けることによって
、核溝部にワイヤ先端を正大して内部′ｒ１１８ｉとワ
イヤとの電気的接続を行うことができ、信頼性の高い電
気的接続が可能となる。[Effect] (1j. By providing a groove in the length direction of the internal electrode, it is possible to make an electrical connection between the internal 'r118i and the wire by enlarging the wire tip in the nuclear groove part, resulting in a highly reliable electrical connection. becomes possible.

（２）、溝を逆テーバ状の横断面形状とすることにより
、さらに接続強度の高い電気的接続を行うことができる
。(2) By making the groove have an inverted tapered cross-sectional shape, an electrical connection with even higher connection strength can be achieved.

（３）、リード上に溝を設けることにより、インナーリ
ード表面のメッキ処理を行うことな（ワイヤとの接続が
可能となり、材料の低減を図ることができる。(3) By providing a groove on the lead, it is possible to connect the inner lead to a wire without plating the surface of the inner lead, thereby reducing the amount of material used.

（４１，メタライズ部を溝の内部にも設けることにより
、ワイヤとメタライズとの接触面積を太き（することが
でき、電気抵抗の低減を図ることができる。(41) By providing the metallized portion also inside the groove, the contact area between the wire and the metallization can be increased, and electrical resistance can be reduced.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、実施例ではパッケージ構造としてレジンモー
ルド型およびチンプキャリア型についてのみ説明したが
、これに限るものでなく、ワイヤポンディングを行う半
導体装置であればいかなるパッケージ構造のものであっ
てもよい。For example, in the embodiment, only resin mold type and chimp carrier type package structures have been described, but the present invention is not limited to these, and any package structure may be used as long as it is a semiconductor device that performs wire bonding.

また、ワイヤの材質についても金に限られず、銅もしく
はアルミニウム等であってもよい。Furthermore, the material of the wire is not limited to gold, and may be copper, aluminum, or the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明による実施例Ｉである半導体装置のワ
イヤとリードの接合部を第２図の［−１線で切断した拡
大部分断面図、 第２図は、実施例１による半導体装置の全体を示す断面
図、 第３図は、本発明による実施例２である半導体装置のワ
イヤとリードの接合部を第４図のｍ−■線で切断した拡
大部分断面図、 第４図は、実施例２による半導体装置の全体を示す断面
図である。 １・・・半導体装置、２・・・レジン、３・・・リード
フレーム、３ａ・・・リード、４・・・タフ゛、５・・
・ベレット、６・・・１艮ペースト、７・　・　・ポン
ディングパッド、８・・　・溝、９・・　ワイヤ、１１
・・・半導体装置、Ｉ２・・・パッケージ基板、Ｉ３・
・・低融点ガラス、１４・・・キャップ、１５・・・ベ
レット、１６・・・銀ペースト、１７・・・ポンディン
グパッド、１８・・・メタライズ、１９・・・溝、２ｏ
・・・ワイヤ。 第　　１　　図 第　　２　　図1 is an enlarged partial sectional view taken along the line [-1 in FIG. 2 of the wire-to-lead junction of a semiconductor device according to Example I of the present invention; FIG. FIG. 3 is an enlarged partial cross-sectional view taken along the line m--■ in FIG. FIG. 2 is a cross-sectional view showing the entire semiconductor device according to Example 2. DESCRIPTION OF SYMBOLS 1...Semiconductor device, 2...Resin, 3...Lead frame, 3a...Lead, 4...Tough, 5...
・Bellet, 6...1 Paste, 7... ・Ponding pad, 8... ・Groove, 9... Wire, 11
...Semiconductor device, I2...Package board, I3.
...Low melting point glass, 14...Cap, 15...Bellet, 16...Silver paste, 17...Ponding pad, 18...Metallization, 19...Groove, 2o
...Wire. Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 １、ワイヤボンディングされる内部電極表面の長さ方向
に溝が設けられていることを特徴とする半導体装置。 ２、溝の開口部付近の横断面幅が溝底側の横断面幅より
も狭くなるように形成されていることを特徴とする特許
請求の範囲第１項記載の半導体装置。 ３、内部電極がパッケージ基板上のメタライズで形成さ
れていることを特徴とする特許請求の範囲第１項記載の
半導体装置。 ４、内部電極がリードフレームの内部リードで形成され
ていることを特徴とする特許請求の範囲第１項記載の半
導体装置。[Scope of Claims] 1. A semiconductor device characterized in that a groove is provided in the length direction of the surface of an internal electrode to be wire-bonded. 2. The semiconductor device according to claim 1, wherein the semiconductor device is formed so that the cross-sectional width near the opening of the groove is narrower than the cross-sectional width at the bottom side of the groove. 3. The semiconductor device according to claim 1, wherein the internal electrodes are formed by metallization on a package substrate. 4. The semiconductor device according to claim 1, wherein the internal electrode is formed of an internal lead of a lead frame.
JP59245985A 1984-11-22 1984-11-22 Semiconductor device Pending JPS61125028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59245985A JPS61125028A (en) 1984-11-22 1984-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245985A JPS61125028A (en) 1984-11-22 1984-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61125028A true JPS61125028A (en) 1986-06-12

Family

ID=17141755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245985A Pending JPS61125028A (en) 1984-11-22 1984-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61125028A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073177A3 (en) * 2001-03-09 2003-06-05 Zellweger Analytics Ltd Electrochemical gas sensor
JP2005026691A (en) * 2003-07-01 2005-01-27 Stmicroelectronics Inc System and method for increasing strength of bond formed with small-diameter wire in ball bonding
WO2008155726A2 (en) * 2007-06-21 2008-12-24 Nxp B.V. A carrier for electric packages and a method of structuring a carrier

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002073177A3 (en) * 2001-03-09 2003-06-05 Zellweger Analytics Ltd Electrochemical gas sensor
JP2005026691A (en) * 2003-07-01 2005-01-27 Stmicroelectronics Inc System and method for increasing strength of bond formed with small-diameter wire in ball bonding
WO2008155726A2 (en) * 2007-06-21 2008-12-24 Nxp B.V. A carrier for electric packages and a method of structuring a carrier
WO2008155726A3 (en) * 2007-06-21 2009-03-05 Nxp Bv A carrier for electric packages and a method of structuring a carrier

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