JPH06459Y2 - 縦型エピタキシャル成長装置 - Google Patents
縦型エピタキシャル成長装置Info
- Publication number
- JPH06459Y2 JPH06459Y2 JP7837388U JP7837388U JPH06459Y2 JP H06459 Y2 JPH06459 Y2 JP H06459Y2 JP 7837388 U JP7837388 U JP 7837388U JP 7837388 U JP7837388 U JP 7837388U JP H06459 Y2 JPH06459 Y2 JP H06459Y2
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- epitaxial growth
- outer ring
- gap
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 12
- 239000012495 reaction gas Substances 0.000 claims description 8
- 238000010926 purge Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000725 suspension Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837388U JPH06459Y2 (ja) | 1988-06-15 | 1988-06-15 | 縦型エピタキシャル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837388U JPH06459Y2 (ja) | 1988-06-15 | 1988-06-15 | 縦型エピタキシャル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02369U JPH02369U (enrdf_load_stackoverflow) | 1990-01-05 |
| JPH06459Y2 true JPH06459Y2 (ja) | 1994-01-05 |
Family
ID=31303302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7837388U Expired - Lifetime JPH06459Y2 (ja) | 1988-06-15 | 1988-06-15 | 縦型エピタキシャル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06459Y2 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295935A (zh) * | 2012-02-22 | 2013-09-11 | 东京毅力科创株式会社 | 基板处理装置 |
| KR20200109672A (ko) * | 2019-03-14 | 2020-09-23 | 주식회사 원익아이피에스 | 웨이퍼 공정용 열처리 장치 및 그의 캡 플랜지 |
| US11315767B2 (en) | 2017-09-25 | 2022-04-26 | Toyota Jidosha Kabushiki Kaisha | Plasma processing apparatus |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5514893B2 (ja) * | 2010-02-26 | 2014-06-04 | 入江工研株式会社 | ゲートバルブのシール構造 |
| JP6029452B2 (ja) * | 2012-02-22 | 2016-11-24 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP6455480B2 (ja) * | 2016-04-25 | 2019-01-23 | トヨタ自動車株式会社 | 成膜装置及び成膜方法 |
| US11251019B2 (en) | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
| WO2020236844A1 (en) * | 2019-05-22 | 2020-11-26 | Lam Research Corporation | Vapor accumulator for corrosive gases with purging |
-
1988
- 1988-06-15 JP JP7837388U patent/JPH06459Y2/ja not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295935A (zh) * | 2012-02-22 | 2013-09-11 | 东京毅力科创株式会社 | 基板处理装置 |
| US11315767B2 (en) | 2017-09-25 | 2022-04-26 | Toyota Jidosha Kabushiki Kaisha | Plasma processing apparatus |
| KR20200109672A (ko) * | 2019-03-14 | 2020-09-23 | 주식회사 원익아이피에스 | 웨이퍼 공정용 열처리 장치 및 그의 캡 플랜지 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02369U (enrdf_load_stackoverflow) | 1990-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5246500A (en) | Vapor phase epitaxial growth apparatus | |
| US6503079B2 (en) | Substrate processing apparatus and method for manufacturing semiconductor device | |
| US5368648A (en) | Sealing apparatus | |
| KR101240220B1 (ko) | 반도체 제조 방법 | |
| US5119541A (en) | Wafer succeptor apparatus | |
| US5884917A (en) | Thermal processing apparatus | |
| JPH06459Y2 (ja) | 縦型エピタキシャル成長装置 | |
| JPH07238380A (ja) | ウエハチャック装置、半導体製造装置および半導体製造方法 | |
| JPH04175294A (ja) | 気相成長装置 | |
| US20060121746A1 (en) | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | |
| JPS592374B2 (ja) | プラズマ気相成長装置 | |
| JPH07161645A (ja) | 減圧ｃｖｄ装置 | |
| JP3611780B2 (ja) | 半導体製造装置 | |
| JP3727147B2 (ja) | エピタキシャルウェハの製造方法およびその製造装置 | |
| KR0133677B1 (ko) | 열처리장치 | |
| JP2983084B2 (ja) | 薄膜形成方法および、この方法を用いた真空成膜装置 | |
| JPH1145858A (ja) | 化合物半導体気相成長装置および方法 | |
| JP2686465B2 (ja) | 熱処理装置 | |
| JP2002305152A (ja) | 半導体基板処理装置 | |
| JPH0521867Y2 (enrdf_load_stackoverflow) | ||
| JPH1116837A (ja) | 減圧ｃｖｄ装置 | |
| JPH11214377A (ja) | 縦型減圧気相成長装置とこれを用いた気相成長方法 | |
| JPH1192280A (ja) | シリコンエピタキシャル気相成長装置 | |
| JPH0530352Y2 (enrdf_load_stackoverflow) | ||
| JPH03262123A (ja) | 半導体デバイス製造装置 |