JPH06459Y2 - Vertical epitaxial growth system - Google Patents
Vertical epitaxial growth systemInfo
- Publication number
- JPH06459Y2 JPH06459Y2 JP7837388U JP7837388U JPH06459Y2 JP H06459 Y2 JPH06459 Y2 JP H06459Y2 JP 7837388 U JP7837388 U JP 7837388U JP 7837388 U JP7837388 U JP 7837388U JP H06459 Y2 JPH06459 Y2 JP H06459Y2
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- epitaxial growth
- outer ring
- gap
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は縦型エピタキシャル成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a vertical epitaxial growth apparatus.
第２図は縦型エピタキシャル成長装置の反応炉の一例を
示す。FIG. 2 shows an example of the reaction furnace of the vertical epitaxial growth apparatus.
図において１はベースプレート、２はアウターリング、
３は石英ベルジャ、４はサスベルジャ、５は反応ガス噴
出パイプ、６はサセプタ、７はウエハである。In the figure, 1 is a base plate, 2 is an outer ring,
Reference numeral 3 is a quartz bell jar, 4 is a suspension bell jar, 5 is a reaction gas ejection pipe, 6 is a susceptor, and 7 is a wafer.
ベースプレート１にアウターリング２を介して真空気密
構造に取付けられたベルジャ３、４内で、回転するサセ
プタ６上に載置されたウエハ７表面に、パイプ５から噴
出される反応ガスによってエピタキシャル成長が行なわ
れる。In the bell jars 3 and 4 attached to the base plate 1 via the outer ring 2 in a vacuum-tight structure, epitaxial growth is performed on the surface of the wafer 7 mounted on the rotating susceptor 6 by the reaction gas ejected from the pipe 5. Be done.
エピタキシャル成長のシーケンスは、例えば、SiH4の熱
分解法では、まず、ウエハを高温の水素中でベークし、
表面のSiO2を還元除去し、そして、HClエッチングを行
ない、表面を清浄にする。For the epitaxial growth sequence, for example, in the thermal decomposition method of SiH 4 , first, the wafer is baked in high-temperature hydrogen,
The SiO 2 on the surface is reduced and removed, and HCl etching is performed to clean the surface.
次に、炉内にハロゲン成分が残存せぬように十分に該成
分をパージして、H2-SiH4-ドーパントガスを送りこみ、
ウエハ７表面にエピタキシャル層を成長させる。Next, the halogen component is sufficiently purged so that the halogen component does not remain in the furnace, and H 2 —SiH 4 —dopant gas is fed,
An epitaxial layer is grown on the surface of the wafer 7.
通常、装置では上記シーケンスはすべて自動的に進行す
るようになっている。Normally, in a device, all of the above sequences proceed automatically.
サセプタ６に載置のウエハ７を取り替える際は、ベルジ
ャ３，４をベルジャ３，４に取付けられたアウターリン
グ２ごとベースプレート１から離して取りのぞけばよい
ようになっている。When the wafer 7 placed on the susceptor 6 is replaced, the bell jars 3, 4 together with the outer ring 2 attached to the bell jars 3, 4 may be removed from the base plate 1.
第３図は従来の縦型エピタキシャル成長装置の一例にお
ける第２図のＡ部分の詳細な構造を示す。FIG. 3 shows a detailed structure of a portion A in FIG. 2 in an example of a conventional vertical epitaxial growth apparatus.
図において１，２，３は第２図の同一符号と同一部分を
示し、11a,11b,12はＯリング、１３は真空排気系に通ず
るパイプである。In the figure, reference numerals 1, 2 and 3 denote the same parts as those in FIG. 2, 11a, 11b and 12 are O-rings, and 13 is a pipe leading to a vacuum exhaust system.
サスベルジャ４にアウターリング２が固定され、サスベ
ルジャ４と石英ベルジャ３が嵌合され、その石英ベルジ
ャ３とアウターリング２間にＯリング１２が挾まれ、石
英ベルジャ３とアウターリング２間から漏れが起らない
構造になっており、ベースプレート１とアウターリング
２間には２個のＯリング１１ａ，１１ｂが円心状に配列
されて挾まれ、２個のＯリング１１ａ，１１ｂの間のベ
ースプレート１とアウターリング２間の隙間がパイプ１
３を介し真空排気系に連結されて真空排気され、ベース
プレート１とアウターリング２間から漏れが起らない構
造になっている。The outer ring 2 is fixed to the suspension bell jar 4, the suspension bell jar 4 and the quartz bell jar 3 are fitted, the O ring 12 is sandwiched between the quartz bell jar 3 and the outer ring 2, and leakage occurs between the quartz bell jar 3 and the outer ring 2. The two O-rings 11a and 11b are arranged between the base plate 1 and the outer ring 2 in a concentric arrangement and sandwiched between the base plate 1 and the outer ring 2 and the base plate 1 between the two O-rings 11a and 11b. The gap between the outer rings 2 is the pipe 1
It is connected to a vacuum exhaust system via 3 and is vacuum-exhausted so that no leakage occurs between the base plate 1 and the outer ring 2.
従来の縦型エピタキシャル成長装置では、エピタキシャ
ル成長のシーケンスの区切りにおける各パージでは、ベ
ースプレート１とアウターリング２間の隙間などの反応
ガスが十分パージされずに残り、処理ごとに反応生成物
がＯリング１１ａに少しずつ付着してゆき、回数を重ね
ると、Ｏリング１１ａでの気密性が徐々に損われてゆ
き、さらに、反応生成物が２個のＯリング１１ａ，１１
ｂの間の隙間に浸入し、真空排気系に通ずる溝、パイプ
１３などに堆積し、真空引きを阻害し、目的が果されな
くなり、炉内と外気間の気密性が保たれなくなるという
問題があった。In the conventional vertical epitaxial growth apparatus, the reaction gas such as the gap between the base plate 1 and the outer ring 2 is not sufficiently purged and remains in the O-ring 11a for each process in each purging at the break of the epitaxial growth sequence. When the O-ring 11a is gradually attached, the airtightness of the O-ring 11a is gradually deteriorated.
There is a problem that it infiltrates into the gap between b and accumulates in the groove, pipe 13 etc. leading to the vacuum exhaust system, obstructs the evacuation, the purpose is not fulfilled, and the airtightness between the inside of the furnace and the outside air cannot be maintained. there were.
また、例えば、HClガスのような反応ガスが、真空排気
系に通ずる溝やパイプ１３に入り、空気と触れて腐食性
を生ずることにより、パイプ１３などの腐食、劣化を招
くという問題があった。Further, for example, there is a problem that a reaction gas such as HCl gas enters the groove or the pipe 13 communicating with the vacuum exhaust system and comes into contact with air to cause corrosiveness, thereby causing corrosion or deterioration of the pipe 13 or the like. .
本考案は上記の問題を解消するためになされたもので、
Ｏリング１１ａでの気密性の低下しない構造のものを提
供することを目的とする。The present invention has been made to solve the above problems,
It is an object of the present invention to provide a structure in which the airtightness of the O-ring 11a does not deteriorate.
本考案の縦型エピタキシャル成長装置は、反応炉のベー
スプレート１に該ベースプレート１とアウターリング２
間に挾まれた内側のＯリング１１ａ内のベースプレート
１とアウターリング２間の隙間に通ずるガス導入穴及
び、該導入穴上端部の上記ベースプレートに円心状の溝
を設け、エピタキシャル成長のシーケンスに応じて上記
溝を経て上記隙間に反応ガスをパージするガスを噴出さ
せる構造としたものである。The vertical epitaxial growth apparatus of the present invention includes a base plate 1 and an outer ring 2 on a base plate 1 of a reactor.
A gas introduction hole leading to a gap between the base plate 1 and the outer ring 2 in the inner O-ring 11a sandwiched between them and a circular center-shaped groove in the base plate at the upper end of the introduction hole are provided to meet the epitaxial growth sequence. And a structure for ejecting a gas for purging the reaction gas through the groove into the gap.
第１図は本考案の実施例におけるベースプレートに設け
た溝の一例を示す。FIG. 1 shows an example of a groove formed in a base plate in the embodiment of the present invention.
図において1,2,3,11a,11b,12,13は第３図の同一符号と
同一または相当する部分を示し、１４はパージガスを送
りこむガス導入穴、１５は円心状の溝である。In the figure, 1,2,3,11a, 11b, 12,13 denote the same or corresponding parts as those in FIG. 3, 14 is a gas introduction hole for sending in purge gas, and 15 is a circular groove.
エピタキシャル成長シーケンスの反応ガスパージ時にガ
ス導入穴１４からもＨ2またはＮ2などのパージ用ガスを
送りこめば、Ｏリング１１ａ内のベースプレート１とア
ウターリング２間の隙間から反応ガスが完全に除去さ
れ、反応生成物がＯリング１１ａに付着することがな
く、真空排気系に通ずる溝、パイプ１３などに堆積する
こともなく、気密が良好に保たれる。If a purging gas such as H 2 or N 2 is also sent from the gas introduction hole 14 during the reaction gas purging of the epitaxial growth sequence, the reaction gas is completely removed from the gap between the base plate 1 and the outer ring 2 in the O-ring 11a, The reaction product does not adhere to the O-ring 11a and is not deposited on the groove communicating with the vacuum exhaust system, the pipe 13 or the like, and good airtightness is maintained.
また、真空排気系に通ずる溝やパイプがHClガスなどに
よって腐食されることもなく劣化が遅くなる。In addition, the groove and pipe leading to the vacuum exhaust system are not corroded by HCl gas or the like, and the deterioration is delayed.
以上説明したように、本考案によれば、反応炉の気密性
が、処理回数を重ねても低下することがなく、また、真
空排気系に通ずる溝、パイプなどに腐食、劣化が起るこ
とがなくなるという効果がある。As described above, according to the present invention, the airtightness of the reactor does not deteriorate even after repeated treatments, and the grooves and pipes leading to the vacuum exhaust system are corroded and deteriorated. There is an effect of disappearing.
第１図は本考案の実施例におけるベースプレートに設け
た溝の一例を示す断面図、第２図は縦型エピタキシャル
成長装置の反応炉の一例を示す説明図、第３図は従来の
縦型エピタキシャル成長装置の一例における第２図のＡ
部分の詳細な構造を示す断面図である。 １…ベースプレート、２…アウターリング、３…石英ベ
ルジャ、11a,11b,12…Ｏリング、１３…パイプ、１４…
ガス導入穴、１５…溝。 なお図中同一符号は同一または相当する部分を示す。FIG. 1 is a sectional view showing an example of a groove provided in a base plate in an embodiment of the present invention, FIG. 2 is an explanatory view showing an example of a reaction furnace of a vertical epitaxial growth apparatus, and FIG. 3 is a conventional vertical epitaxial growth apparatus. 2A in one example
It is sectional drawing which shows the detailed structure of a part. 1 ... Base plate, 2 ... Outer ring, 3 ... Quartz bell jar, 11a, 11b, 12 ... O-ring, 13 ... Pipe, 14 ...
Gas introduction hole, 15 ... groove. The same reference numerals in the drawings denote the same or corresponding parts.
Claims (1)
リングとベースプレート間に２個のＯリングが円心状に
配列されて挾まれ、該２個のＯリングの間の上記ベース
プレートとアウターリング間の隙間が真空排気系に連結
されて真空排気され、反応炉内と外気との気密が保持さ
れる構造の縦型エピタキシャル成長装置において、上記
ベースプレートに該ベースプレートと上記アウターリン
グ間に挾まれた内側のＯリング内の該ベースプレートと
アウターリング間の隙間に通ずるガス導入穴及び該導入
穴上端部の上記ベースプレートに円心状の溝を設けエピ
タキシャル成長のシーケンスに応じて上記溝を経て上記
隙間に反応ガスをパージするガスを噴出させる構造とし
たことを特徴とする縦型エピタキシャル成長装置。1. A pair of O-rings are arranged between an outer ring attached to a bell jar of a reactor and a base plate in a concentric arrangement and sandwiched between the base plate and the outer ring between the two O-rings. In the vertical epitaxial growth apparatus having a structure in which the gap is connected to a vacuum exhaust system and is evacuated and the airtightness between the inside of the reaction furnace and the outside air is maintained, the inside of the base plate and the outer ring sandwiched between the base plate and A gas introduction hole communicating with the gap between the base plate and the outer ring in the O-ring and a concentric groove are provided in the base plate at the upper end of the introduction hole, and a reaction gas is introduced into the gap through the groove according to the sequence of epitaxial growth. A vertical epitaxial growth apparatus having a structure for ejecting a purging gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837388U JPH06459Y2 (en) | 1988-06-15 | 1988-06-15 | Vertical epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7837388U JPH06459Y2 (en) | 1988-06-15 | 1988-06-15 | Vertical epitaxial growth system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02369U JPH02369U (en) | 1990-01-05 |
| JPH06459Y2 true JPH06459Y2 (en) | 1994-01-05 |
Family
ID=31303302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7837388U Expired - Lifetime JPH06459Y2 (en) | 1988-06-15 | 1988-06-15 | Vertical epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06459Y2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295935A (en) * | 2012-02-22 | 2013-09-11 | 东京毅力科创株式会社 | Substrate processing apparatus |
| KR20200109672A (en) * | 2019-03-14 | 2020-09-23 | 주식회사 원익아이피에스 | Heating reactor for wafer processing and cap flange therof |
| US11315767B2 (en) | 2017-09-25 | 2022-04-26 | Toyota Jidosha Kabushiki Kaisha | Plasma processing apparatus |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101458167B1 (en) * | 2010-02-26 | 2014-11-03 | 이리에 고켕 가부시키가이샤 | Seal structure for gate valve |
| JP6029452B2 (en) * | 2012-02-22 | 2016-11-24 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP6455480B2 (en) | 2016-04-25 | 2019-01-23 | トヨタ自動車株式会社 | Film forming apparatus and film forming method |
| US11251019B2 (en) | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
-
1988
- 1988-06-15 JP JP7837388U patent/JPH06459Y2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103295935A (en) * | 2012-02-22 | 2013-09-11 | 东京毅力科创株式会社 | Substrate processing apparatus |
| US11315767B2 (en) | 2017-09-25 | 2022-04-26 | Toyota Jidosha Kabushiki Kaisha | Plasma processing apparatus |
| KR20200109672A (en) * | 2019-03-14 | 2020-09-23 | 주식회사 원익아이피에스 | Heating reactor for wafer processing and cap flange therof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02369U (en) | 1990-01-05 |
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