JPH01298724A - Semiconductor substrate supporting boat - Google Patents

Abstract

PURPOSE:To eliminate the formation of an organic polymer film at the time of deposition of a silicon oxide film using organic silane and to improve the manufacturing yield of a semiconductor integrated circuit device by forming a protrusion between a semiconductor substrate and a supporting disc to form a gap, and evacuating the rear side of the substrate. CONSTITUTION:A supporting protrusion 13 is set highly in its height, and, when a semiconductor substrate 14 is supported, an air gap for evacuating gas to be introduced to the rear face side of the substrate and a gap used also as a groove for removing and inserting a semiconductor substrate transfer jig are provided between the substrate 14 and a supporting disc 12. The substrate 14 is placed on the protrusion 13, and supported. The substrate 14 is moved by inserting and removing the jig in a space between the substrate 14 and the disc 12. Accordingly, the air gap between the substrate 14 and the disc 12 is sufficiently large, and reaction by-product is rapidly discharged, and no organic polymer is generated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor substrate support boat, and more particularly to a semiconductor substrate support boat used in a vertical reduced pressure chemical vapor deposition apparatus.

[Conventional technology]

Low pressure chemical vapor deposition (hereinafter abbreviated as LPGVD) is frequently used in semiconductor integrated circuit manufacturing processes, and is used to form polycrystalline silicon films, silicon nitride films, silicon oxide films, and the like. In addition, the recent increase in the diameter of semiconductor substrates and the accompanying increase in the size of semiconductor substrate support boats has increased the total weight, and vertical LPGVD devices that are easy to move are becoming mainstream.

A semiconductor substrate support boat conventionally used in a vertical LPGVD device will be explained with reference to the drawings. Figure 3(a),
As shown in (b), in the conventional semiconductor substrate support boat, a support disk 3 on which a semiconductor substrate is mounted is mounted on a plurality of support rods 31.
2.32... are fixed in a plurality of stages vertically, and a semiconductor substrate 34 is placed in the center of the support disk 32 of each stage. Further, the support disk 32 is provided with a groove 33 extending from the outer periphery to the center thereof into which a semiconductor substrate transfer jig is inserted and removed.
Carrying in and out of the building is being carried out.

When forming a silicon oxide film used as an interlayer insulating film of a semiconductor integrated circuit device by the LPCVD method, there are two methods: using silane (SiH, ) and oxygen (02) as reaction gases, and using an organic silane, such as tetraethoxysilane ( TE0
There is a method using 1). The latter method has poor coverage of steps, and is said to be suitable for the manufacturing process of recent highly integrated semiconductor integrated circuit devices.

[Problem to be solved by the invention]

However, when forming a silicon oxide film using organosilane using the conventional semiconductor substrate support boat described above, although a good silicon oxide film is obtained on the front surface of the semiconductor substrate, black organic polymer is often formed on the back surface. or recognized. This is because organic silane enters the minute voids existing between the semiconductor substrate 34 and the support disk 32 and causes a surface catalytic reaction, or carbon (C) or hydrogen (
It is thought that by-products containing H) cannot be completely exhausted through minute voids and are polymerized.

This black organic polymer is insoluble in acids such as hydrofluoric acid (HF), and has a rough film quality that easily peels off from the backside of the substrate, resulting in a major problem in that it reduces the manufacturing yield of semiconductor integrated circuit devices. was there.

An object of the present invention is to provide a semiconductor substrate boat that solves the above problems.

[Differences between the invention and the prior art]

The present invention differs from the conventional semiconductor substrate support boat described above in that a gap is provided between the semiconductor substrate and the semiconductor substrate support disk, thereby allowing reaction byproducts to be quickly exhausted.

[Means to solve the problem]

In order to achieve the above object, the present invention provides a semiconductor substrate support boat used in a vertical reduced pressure chemical vapor deposition apparatus.
A support body on which a semiconductor substrate is mounted has a plurality of protrusions that support the substrate with a gap provided between the semiconductor substrate and the support body.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

(Example 1) FIG. 1(a) is a longitudinal sectional view showing Example 1 of the present invention.
Figure (b) is a cross-sectional view of the same.

In the figure, a plurality of support disks 12, 12... on which semiconductor substrates 14 are mounted are supported by a plurality of support rods 11, 11..., arranged in multiple stages vertically, and a support circle of each stage is shown. A plurality of tall support protrusions 13, 13... are planted on the plate 12.

The support protrusions 13 of this embodiment are set tall, so that when supporting the semiconductor substrate 14, there is a gap between the substrate 14 and the support disk 12 for exhausting gas that has gone around to the back side of the substrate. Also, a gap is formed that also serves as a space for inserting and removing the semiconductor substrate transport jig.

In the embodiment, the semiconductor substrate 14 is placed on and supported by the support protrusion 13 . The movement of the semiconductor substrate 14 is
This is done by inserting and removing a semiconductor transport jig into and from the space between 4 and the support disk 12.

In the semiconductor substrate support boat of the present invention, the gap between the semiconductor substrate 14 and the support disk 12 is sufficiently large, so that reaction by-products are quickly exhausted and no organic polymer is produced.

(Example 2) FIG. 2(a) is a vertical sectional view showing Example 2 of the present invention.
Figure (b) is a cross-sectional view of the same.

In this embodiment, the height of the support protrusion 23 is set to the height necessary to provide a gap between the substrate 14 and the support disk 12 sufficient to exhaust the debris that goes around to the back side of the substrate, and In the repair example, the support protrusions 23 are used to attach and remove the substrate 1 using the support protrusions 23.
Since a gap is formed between the substrate 4 and the support disk 12, no organic polymer is produced on the back surface of the substrate 14.

In the second embodiment, the space between the semiconductor substrate transfer jig and the support disk 1 is secured by the groove 24, so the size of the support protrusion 23 can be minimized, and as a result, the surface of the semiconductor substrate 14 and the support disk 1 are
The difference in height between the two surfaces is smaller than that in Example 1, and the uniformity of the film thickness within the surface of the semiconductor substrate is improved.

〔Effect of the invention〕

As explained above, the present invention provides a protrusion between the semiconductor substrate and the support disk to form a gap and actively exhausts the back side of the substrate, thereby reducing the amount of organic polymer when depositing a silicon oxide film using organic silane. This method has the effect of improving the manufacturing yield of semiconductor integrated circuit devices without forming a film.

[Brief explanation of the drawing]

FIG. 1(a) is a vertical cross-sectional view showing Embodiment 1 of the present invention.
FIG. 2(b) is a cross-sectional view of the same, FIG. 2(a) is a vertical cross-sectional view showing Example 2 of the present invention, FIG. 2(b) is a cross-sectional view of the same, and FIG. 3(a) is a conventional example. FIG. 3 fb) is a cross-sectional view of the same. 11...Support rod 12...Support disk 13
...Support protrusion 14...Semiconductor substrate 24.
...Semiconductor substrate transfer wheel Patent applicant: NEC Corporation (a) (b) Figure 1

Claims (1)

[Claims] (1) In a semiconductor substrate support boat used in a vertical reduced pressure chemical vapor deposition apparatus, a support body on which a semiconductor substrate is mounted has a plurality of support bodies supporting the substrate with a gap provided between the semiconductor substrate and the support body. A semiconductor substrate support boat characterized by having a protrusion.