JPH0639455Y2 - Ｍｏｓ素子の保護回路装置 - Google Patents
Ｍｏｓ素子の保護回路装置Info
- Publication number
- JPH0639455Y2 JPH0639455Y2 JP1987018938U JP1893887U JPH0639455Y2 JP H0639455 Y2 JPH0639455 Y2 JP H0639455Y2 JP 1987018938 U JP1987018938 U JP 1987018938U JP 1893887 U JP1893887 U JP 1893887U JP H0639455 Y2 JPH0639455 Y2 JP H0639455Y2
- Authority
- JP
- Japan
- Prior art keywords
- region
- diode
- conductivity type
- protection circuit
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987018938U JPH0639455Y2 (ja) | 1987-02-10 | 1987-02-10 | Ｍｏｓ素子の保護回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987018938U JPH0639455Y2 (ja) | 1987-02-10 | 1987-02-10 | Ｍｏｓ素子の保護回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63127152U JPS63127152U (enrdf_load_stackoverflow) | 1988-08-19 |
| JPH0639455Y2 true JPH0639455Y2 (ja) | 1994-10-12 |
Family
ID=30813075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987018938U Expired - Lifetime JPH0639455Y2 (ja) | 1987-02-10 | 1987-02-10 | Ｍｏｓ素子の保護回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0639455Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013128227A1 (en) * | 2012-02-29 | 2013-09-06 | Freescale Semiconductor, Inc. | Electrostatic discharge protection circuit arrangement, electronic circuit and esd protection method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5821374A (ja) * | 1981-07-29 | 1983-02-08 | Toshiba Corp | 半導体装置 |
-
1987
- 1987-02-10 JP JP1987018938U patent/JPH0639455Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63127152U (enrdf_load_stackoverflow) | 1988-08-19 |
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