JPH0638399Y2 - プラズマ発生装置 - Google Patents
プラズマ発生装置Info
- Publication number
- JPH0638399Y2 JPH0638399Y2 JP15424186U JP15424186U JPH0638399Y2 JP H0638399 Y2 JPH0638399 Y2 JP H0638399Y2 JP 15424186 U JP15424186 U JP 15424186U JP 15424186 U JP15424186 U JP 15424186U JP H0638399 Y2 JPH0638399 Y2 JP H0638399Y2
- Authority
- JP
- Japan
- Prior art keywords
- hollow cathode
- plasma
- discharge
- nozzle hole
- circular plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 238000007733 ion plating Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 230000007774 longterm Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15424186U JPH0638399Y2 (ja) | 1986-10-07 | 1986-10-07 | プラズマ発生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15424186U JPH0638399Y2 (ja) | 1986-10-07 | 1986-10-07 | プラズマ発生装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6360300U JPS6360300U (enrdf_load_stackoverflow) | 1988-04-21 |
| JPH0638399Y2 true JPH0638399Y2 (ja) | 1994-10-05 |
Family
ID=31073861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15424186U Expired - Lifetime JPH0638399Y2 (ja) | 1986-10-07 | 1986-10-07 | プラズマ発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0638399Y2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0196372A (ja) * | 1987-10-07 | 1989-04-14 | Raimuzu:Kk | イオンプレーティング装置 |
| JP6178526B1 (ja) * | 2017-01-17 | 2017-08-09 | イオンラボ株式会社 | 金属イオン源 |
-
1986
- 1986-10-07 JP JP15424186U patent/JPH0638399Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6360300U (enrdf_load_stackoverflow) | 1988-04-21 |
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