JPH06342960A - 選択エッチング方法ならびに光電子素子およびその製造方法 - Google Patents
選択エッチング方法ならびに光電子素子およびその製造方法Info
- Publication number
- JPH06342960A JPH06342960A JP7438994A JP7438994A JPH06342960A JP H06342960 A JPH06342960 A JP H06342960A JP 7438994 A JP7438994 A JP 7438994A JP 7438994 A JP7438994 A JP 7438994A JP H06342960 A JPH06342960 A JP H06342960A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- znse
- optoelectronic device
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 60
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 46
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 238000001020 plasma etching Methods 0.000 claims abstract description 25
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 17
- 238000001312 dry etching Methods 0.000 claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000005253 cladding Methods 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017916 MgMn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- -1 ZnSe compound Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7438994A JPH06342960A (ja) | 1993-04-07 | 1994-03-18 | 選択エッチング方法ならびに光電子素子およびその製造方法 |
| TW83103030A TW236042B (cs) | 1993-04-07 | 1994-04-07 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-105108 | 1993-04-07 | ||
| JP10510893 | 1993-04-07 | ||
| JP7438994A JPH06342960A (ja) | 1993-04-07 | 1994-03-18 | 選択エッチング方法ならびに光電子素子およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06342960A true JPH06342960A (ja) | 1994-12-13 |
Family
ID=26415531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7438994A Pending JPH06342960A (ja) | 1993-04-07 | 1994-03-18 | 選択エッチング方法ならびに光電子素子およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH06342960A (cs) |
| TW (1) | TW236042B (cs) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283845A (ja) * | 1996-04-18 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
| WO1998015996A1 (en) * | 1996-10-07 | 1998-04-16 | Minnesota Mining And Manufacturing Company | Selective etch for ii-vi semiconductors |
| US5834330A (en) * | 1996-10-07 | 1998-11-10 | Minnesota Mining And Manufacturing Company | Selective etch method for II-VI semiconductors |
| JP2012507155A (ja) * | 2008-10-31 | 2012-03-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 |
-
1994
- 1994-03-18 JP JP7438994A patent/JPH06342960A/ja active Pending
- 1994-04-07 TW TW83103030A patent/TW236042B/zh active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09283845A (ja) * | 1996-04-18 | 1997-10-31 | Matsushita Electric Ind Co Ltd | 半導体発光素子及びその製造方法 |
| WO1998015996A1 (en) * | 1996-10-07 | 1998-04-16 | Minnesota Mining And Manufacturing Company | Selective etch for ii-vi semiconductors |
| US5834330A (en) * | 1996-10-07 | 1998-11-10 | Minnesota Mining And Manufacturing Company | Selective etch method for II-VI semiconductors |
| US6058123A (en) * | 1996-10-07 | 2000-05-02 | 3M Innovative Properties Company | Selective etch for II-VI semiconductors |
| JP2012507155A (ja) * | 2008-10-31 | 2012-03-22 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW236042B (cs) | 1994-12-11 |
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