TW236042B - - Google Patents
Info
- Publication number
- TW236042B TW236042B TW83103030A TW83103030A TW236042B TW 236042 B TW236042 B TW 236042B TW 83103030 A TW83103030 A TW 83103030A TW 83103030 A TW83103030 A TW 83103030A TW 236042 B TW236042 B TW 236042B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10510893 | 1993-04-07 | ||
| JP7438994A JPH06342960A (ja) | 1993-04-07 | 1994-03-18 | 選択エッチング方法ならびに光電子素子およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW236042B true TW236042B (cs) | 1994-12-11 |
Family
ID=26415531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW83103030A TW236042B (cs) | 1993-04-07 | 1994-04-07 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH06342960A (cs) |
| TW (1) | TW236042B (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3708213B2 (ja) * | 1996-04-18 | 2005-10-19 | 松下電器産業株式会社 | 半導体発光素子及びその製造方法 |
| US5834330A (en) * | 1996-10-07 | 1998-11-10 | Minnesota Mining And Manufacturing Company | Selective etch method for II-VI semiconductors |
| CN1232578A (zh) * | 1996-10-07 | 1999-10-20 | 明尼苏达矿业和制造公司 | 对ii－vi半导体有选择的刻蚀 |
| DE102008054217A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
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1994
- 1994-03-18 JP JP7438994A patent/JPH06342960A/ja active Pending
- 1994-04-07 TW TW83103030A patent/TW236042B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06342960A (ja) | 1994-12-13 |