JPH06326269A - メモリ・セル - Google Patents

メモリ・セル

Info

Publication number
JPH06326269A
JPH06326269A JP6077069A JP7706994A JPH06326269A JP H06326269 A JPH06326269 A JP H06326269A JP 6077069 A JP6077069 A JP 6077069A JP 7706994 A JP7706994 A JP 7706994A JP H06326269 A JPH06326269 A JP H06326269A
Authority
JP
Japan
Prior art keywords
polysilicon
memory cell
diffusion region
diffusion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6077069A
Other languages
English (en)
Japanese (ja)
Inventor
Thekkemadathil V Rajeevakumar
テケマダサイル・ブィ・ラジェバクマー
Pia Naoko Sanda
ピア・ナオコ・サンダ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPH06326269A publication Critical patent/JPH06326269A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP6077069A 1993-04-22 1994-04-15 メモリ・セル Pending JPH06326269A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5233093A 1993-04-22 1993-04-22
US052330 1993-04-22

Publications (1)

Publication Number Publication Date
JPH06326269A true JPH06326269A (ja) 1994-11-25

Family

ID=21976907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6077069A Pending JPH06326269A (ja) 1993-04-22 1994-04-15 メモリ・セル

Country Status (3)

Country Link
EP (1) EP0621632A1 (en, 2012)
JP (1) JPH06326269A (en, 2012)
TW (1) TW241392B (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19812212A1 (de) 1998-03-19 1999-09-23 Siemens Ag MOS-Transistor in einer Ein-Transistor-Speicherzelle mit einem lokal verdickten Gateoxid und Herstellverfahren
US6828191B1 (en) 1998-06-15 2004-12-07 Siemens Aktiengesellschaft Trench capacitor with an insulation collar and method for producing a trench capacitor
EP0971414A1 (de) * 1998-06-15 2000-01-12 Siemens Aktiengesellschaft Grabenkondensator mit Isolationskragen und vergrabenen Kontakt und entsprechendes Herstellungsverfahren
EP0981164A3 (en) * 1998-08-18 2003-10-15 International Business Machines Corporation Low resistance fill for deep trench capacitor
US6194736B1 (en) * 1998-12-17 2001-02-27 International Business Machines Corporation Quantum conductive recrystallization barrier layers
DE19911149C1 (de) 1999-03-12 2000-05-18 Siemens Ag Integrierte Schaltungsanordnung, die eine in einem Substrat vergrabene leitende Struktur umfaßt, die mit einem Gebiet des Substrats elektrisch verbunden ist, und Verfahren zu deren Herstellung
DE19946719A1 (de) * 1999-09-29 2001-04-19 Infineon Technologies Ag Grabenkondensator und Verfahren zu seiner Herstellung
DE10045694A1 (de) * 2000-09-15 2002-04-04 Infineon Technologies Ag Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074556A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd キヤパシタ
JPH04370956A (ja) * 1991-06-20 1992-12-24 Mitsubishi Electric Corp 半導体装置
JPH0563155A (ja) * 1991-08-30 1993-03-12 Texas Instr Japan Ltd 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072261A (ja) * 1983-09-28 1985-04-24 Fujitsu Ltd 半導体装置
JPH0449654A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体メモリ
US5065273A (en) * 1990-12-04 1991-11-12 International Business Machines Corporation High capacity DRAM trench capacitor and methods of fabricating same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074556A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd キヤパシタ
JPH04370956A (ja) * 1991-06-20 1992-12-24 Mitsubishi Electric Corp 半導体装置
JPH0563155A (ja) * 1991-08-30 1993-03-12 Texas Instr Japan Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0621632A1 (en) 1994-10-26
TW241392B (en, 2012) 1995-02-21

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