JPH0630849Y2 - 化学気相生成装置 - Google Patents
化学気相生成装置Info
- Publication number
- JPH0630849Y2 JPH0630849Y2 JP1324989U JP1324989U JPH0630849Y2 JP H0630849 Y2 JPH0630849 Y2 JP H0630849Y2 JP 1324989 U JP1324989 U JP 1324989U JP 1324989 U JP1324989 U JP 1324989U JP H0630849 Y2 JPH0630849 Y2 JP H0630849Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- susceptor
- loop
- inert gas
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1324989U JPH0630849Y2 (ja) | 1989-02-06 | 1989-02-06 | 化学気相生成装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1324989U JPH0630849Y2 (ja) | 1989-02-06 | 1989-02-06 | 化学気相生成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02106460U JPH02106460U (es) | 1990-08-23 |
JPH0630849Y2 true JPH0630849Y2 (ja) | 1994-08-17 |
Family
ID=31223394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1324989U Expired - Lifetime JPH0630849Y2 (ja) | 1989-02-06 | 1989-02-06 | 化学気相生成装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0630849Y2 (es) |
-
1989
- 1989-02-06 JP JP1324989U patent/JPH0630849Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH02106460U (es) | 1990-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6506691B2 (en) | High rate silicon nitride deposition method at low pressures | |
US6280790B1 (en) | Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system | |
JP3581388B2 (ja) | 均一性が向上した堆積ポリシリコン膜と、そのための装置 | |
US4800105A (en) | Method of forming a thin film by chemical vapor deposition | |
JP5619164B2 (ja) | Cvd方法およびcvd反応炉 | |
JPH0950965A (ja) | 枚葉式の熱処理装置 | |
JPH06275608A (ja) | 成膜方法 | |
US5096534A (en) | Method for improving the reactant gas flow in a reaction chamber | |
JP2005142529A (ja) | 成膜装置 | |
JP4547744B2 (ja) | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 | |
JPH09219369A (ja) | 半導体装置の製造装置および製造方法 | |
JPH0630849Y2 (ja) | 化学気相生成装置 | |
JPH0766139A (ja) | 化学気相成長装置 | |
JPH06302519A (ja) | 半導体製造装置 | |
JP4703844B2 (ja) | グラファイトナノファイバー薄膜形成用熱cvd装置 | |
JPS61289623A (ja) | 気相反応装置 | |
JPH02184022A (ja) | Cvd電極 | |
JPS59159980A (ja) | 気相成長装置 | |
JPH0518452B2 (es) | ||
KR20000038764A (ko) | 반도체 웨이퍼의 박막증착용 가스주입장치 | |
JPS587817A (ja) | 半導体気相成長方法 | |
JPS62208624A (ja) | 気相成長装置 | |
JPH05251360A (ja) | 膜形成装置 | |
JPS62154617A (ja) | 気相成長装置 | |
JP2968085B2 (ja) | 気相成長装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |