JPH0630849Y2 - Chemical vapor phase generator - Google Patents
Chemical vapor phase generatorInfo
- Publication number
- JPH0630849Y2 JPH0630849Y2 JP1324989U JP1324989U JPH0630849Y2 JP H0630849 Y2 JPH0630849 Y2 JP H0630849Y2 JP 1324989 U JP1324989 U JP 1324989U JP 1324989 U JP1324989 U JP 1324989U JP H0630849 Y2 JPH0630849 Y2 JP H0630849Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- susceptor
- loop
- inert gas
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案はVLSI製造プロセスにおいて、Poly Si,Si3N4,Si
O2及びその不純物(B,P)添加物(BPSG,PSG等），高融点金
属(W,Mo,Ti等）及びそのシリサイドのような各種の薄膜
を生成するプロセスに使用される化学気相生成装置に関
する。[Detailed Description of the Invention] [Industrial field of application] The present invention is applied to poly Si, Si 3 N 4 , Si
Chemical vapor phase used in the process of forming various thin films such as O 2 and its impurities (B, P) additives (BPSG, PSG, etc.), refractory metals (W, Mo, Ti, etc.) and their silicides It relates to a generator.
第３図は赤外線ランプを加熱源として用いた従来装置の
一例の構成を示す簡略断面図である。FIG. 3 is a simplified cross-sectional view showing the configuration of an example of a conventional device using an infrared lamp as a heating source.
１は反応室、２はSiCコートを施したサセプタで、石英
遮蔽板３のＵ字状折曲部端面17上に設置されている。こ
のサセプタ２上には基板４が設けられている。５は石英
窓、13aはＯリング、３は通気孔12を有する石英遮蔽板
で、反応室１内と赤外線照射室14内を遮蔽する。Reference numeral 1 is a reaction chamber, and 2 is a SiC-coated susceptor, which is installed on the end face 17 of the U-shaped bent portion of the quartz shield plate 3. A substrate 4 is provided on the susceptor 2. Reference numeral 5 is a quartz window, 13a is an O-ring, and 3 is a quartz shielding plate having a ventilation hole 12, which shields the reaction chamber 1 and the infrared irradiation chamber 14 from each other.
６はこの石英遮蔽板３とサセプタ２との間に不活性ガス
を注入する不活性ガス注入口、10は反応室１内に反応ガ
スを注入する反応ガス注入口、11は反応室１内のガスを
排気する排気ポンプ、16は圧力制御弁である。6 is an inert gas inlet for injecting an inert gas between the quartz shielding plate 3 and the susceptor 2, 10 is a reaction gas inlet for injecting a reaction gas into the reaction chamber 1, and 11 is an inside of the reaction chamber 1. An exhaust pump for exhausting gas, 16 is a pressure control valve.
このような従来装置において例えばSiH4ガスを反応ガス
（原料ガス）としてPoly Si膜を生成しようとする場
合、照射室14内へ不活性ガスを注入し、第４図示のよう
にサセプタ２と石英遮蔽板３のＵ字状折曲部端面17との
間を不活性ガスを実線矢印方向に流通させてSiH4ガスに
より破線で示すように反応ガスが逆拡散（逆流）しない
ようにしているにもかかわらず、サセプタ２の平坦度及
び石英遮蔽板３のＵ字状折曲部端面17のサセプタ支持部
の平坦度の加工精度の限界等により照射室14へ反応ガス
が逆拡散し、石英窓５にPoly Si膜が生成付着し、赤外
線ランプ９からサセプタ２へのエネルギーの減衰をもた
らし、サセプタ２の温度の不安定性をもたらす原因とな
っていた。In such a conventional apparatus, for example, when an SiH 4 gas is used as a reaction gas (raw material gas) to form a Poly Si film, an inert gas is injected into the irradiation chamber 14, and as shown in FIG. The inert gas is allowed to flow in the direction of the solid line arrow between the shield plate 3 and the end surface 17 of the U-shaped bent portion so that the reaction gas does not reversely diffuse (reverse flow) by the SiH 4 gas as shown by the broken line. Nevertheless, due to the limitation of the processing accuracy of the flatness of the susceptor 2 and the flatness of the susceptor supporting portion of the end surface 17 of the U-shaped bent portion of the quartz shield plate 3, the reaction gas is inversely diffused into the irradiation chamber 14, and the quartz window A Poly Si film was generated and adhered to the sample No. 5, causing the energy from the infrared lamp 9 to be attenuated to the susceptor 2 and causing the instability of the temperature of the susceptor 2.
本考案は上記の課題を解決するためになされたもので、
完全なシール材を使用できない高温かつ不純物の汚染を
もたらすことの許されない部所での反応ガスの逆拡散を
防止し、サセプタ２の温度の安定化を図ろうとするもの
である。The present invention has been made to solve the above problems,
It is intended to prevent the back diffusion of the reaction gas at a portion where the complete sealing material cannot be used at a high temperature and where contamination of impurities is not allowed and the temperature of the susceptor 2 is stabilized.
即ち、本考案装置は第１図示のように反応室１内でサセ
プタ２を石英遮蔽板３に支持し、このサセプタ２に基板
４を設け、反応室１内に反応ガスを注入しつつ排気し、
基板４を設けたサセプタ２を石英窓５外より加熱するこ
とにより基板４に薄膜を生成する化学気相生成装置にお
いて、石英遮蔽板を２重構造とし、一方の石英遮蔽板３
と石英窓５との間及び両石英遮蔽板３，3a間に、不活性
ガスを注入する不活性注入口６，6aを設け、これらの石
英遮蔽板３，3aとサセプタ２との間に不活性ガスが流れ
る流路が形成されている構成としたものである。That is, the apparatus of the present invention supports the susceptor 2 on the quartz shield plate 3 in the reaction chamber 1 as shown in FIG. 1, and provides the substrate 4 on the susceptor 2 to inject the reaction gas into the reaction chamber 1 and exhaust it. ,
In a chemical vapor deposition apparatus for producing a thin film on a substrate 4 by heating a susceptor 2 provided with a substrate 4 from outside a quartz window 5, the quartz shielding plate has a double structure and one quartz shielding plate 3
Between the quartz window 5 and the quartz window 5 and between the quartz shielding plates 3 and 3a, inert inlets 6 and 6a for injecting an inert gas are provided, and the space between these quartz shielding plates 3 and 3a and the susceptor 2 is not. The flow path through which the active gas flows is formed.
石英遮蔽板３と石英窓５との間及び両石英遮蔽板３，3a
間にそれぞれ不活性ガス注入口６，6aより不活性カスを
注入すると、石英遮蔽板３と石英窓５との間に注入され
た不活性ガスは流路を経て両石英遮蔽板３，3a間に注入
された不活性ガスと合流し、これらの石英遮蔽板３，3a
とサセプタ２との間に形成される流路を通って反応室１
内に流入することになり、反応室１内への不活性ガスの
流路が十分に長くとれるとめ、反応室１内の反応ガスが
当該流路を通って石英遮蔽板３と石英窓５との間に逆拡
散（逆流）することはなく、石英窓５に薄膜が生成付着
することがないから、サセプタ２へのエネルギーが減衰
せず、サセプタ２の温度が安定化することになる。Between the quartz shield plate 3 and the quartz window 5 and both quartz shield plates 3 and 3a
When inert gas is injected through the inert gas injection ports 6 and 6a, respectively, the inert gas injected between the quartz shielding plate 3 and the quartz window 5 passes between the quartz shielding plates 3 and 3a through the flow path. The quartz shielding plates 3, 3a merge with the inert gas injected into the
Through the flow path formed between the susceptor 2 and the reaction chamber 1
Since the flow path of the inert gas into the reaction chamber 1 can be made sufficiently long, the reaction gas in the reaction chamber 1 passes through the flow path and the quartz shield plate 3 and the quartz window 5 are introduced. There is no reverse diffusion (backflow) during this period, and no thin film is generated and attached to the quartz window 5, so the energy to the susceptor 2 is not attenuated and the temperature of the susceptor 2 is stabilized.
〔実施例〕 以下図面によって本考案の実施例を説明する。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.
第１図は本考案装置の一実施例の構成を示す簡略断面
図、第２図はその要部の断面図である。FIG. 1 is a simplified sectional view showing the construction of an embodiment of the device of the present invention, and FIG. 2 is a sectional view of the main part thereof.
第１図において１は反応室、２はSiCコートを施したサ
セプタ、４はこのサセプタ２上に載置された基板、３，
3aはそれぞれ通気孔12,12aを有する石英遮蔽板で、２重
構造になっている。５は反応室１の下部を構成する石英
窓、６，6aはそれぞれ石英遮蔽板３と石英窓５との間
（赤外線照射室14）及び両石英遮蔽板３，3a間に不活性
ガスを注入する不活性ガス注入口である。In FIG. 1, 1 is a reaction chamber, 2 is a susceptor coated with SiC, 4 is a substrate placed on the susceptor 2, 3,
Reference numeral 3a is a quartz shielding plate having ventilation holes 12 and 12a, and has a double structure. Reference numeral 5 is a quartz window forming the lower part of the reaction chamber 1, and 6 and 6a are inert gas injected between the quartz shielding plate 3 and the quartz window 5 (infrared irradiation chamber 14) and both quartz shielding plates 3 and 3a. It is an inert gas inlet.
サセプタ２の下面には、同心状に２重の円形ループ状嵌
合部８，8aが形成され、これらの円形ループ状嵌合部
８，8aに嵌合する円形ループ状突出部７，7aが石英遮蔽
板３，3aにそれぞれ設けられている。これらの円形ルー
プ状嵌合部８，8aと円形ループ状突出部７，7aが嵌合し
てサセプタ２は石英遮蔽板３，3aが支持されている。On the lower surface of the susceptor 2, double circular loop-shaped fitting portions 8 and 8a are concentrically formed, and the circular loop-shaped protruding portions 7 and 7a that fit into these circular loop-shaped fitting portions 8 and 8a are formed. The quartz shield plates 3 and 3a are provided respectively. The circular loop-shaped fitting portions 8 and 8a and the circular loop-shaped protruding portions 7 and 7a are fitted to each other, and the quartz shield plates 3 and 3a are supported by the susceptor 2.
石英窓５外には複数本の赤外線ランプ９が並設されてい
る。10は反応室１内に反応ガスを注入する反応ガス注入
口、11は反応室１内のガスを圧力制御弁16を介して排気
する排気装置、例えば排気ポンプである。13a〜13cはＯ
リング、15は冷却水通路である。A plurality of infrared lamps 9 are arranged side by side outside the quartz window 5. Reference numeral 10 is a reaction gas inlet for injecting a reaction gas into the reaction chamber 1, and 11 is an exhaust device for exhausting the gas in the reaction chamber 1 via the pressure control valve 16, for example, an exhaust pump. 13a-13c is O
The ring, 15 is a cooling water passage.
上記の構成においてサセプタ２上に基板４を載置し、反
応室１内を真空排気する。しかる後、不活性ガス注入口
６，6aよりN2,ArまたはHeガスを数SCCM〜数十SCCM，石
英遮蔽板３と石英窓５との間の赤外線照射室14及び両石
英遮蔽板３，3a間に注入する。In the above structure, the substrate 4 is placed on the susceptor 2 and the reaction chamber 1 is evacuated. Then, several SCCM to several tens of SCCM of N 2 , Ar or He gas is introduced from the inert gas inlets 6 and 6a, the infrared irradiation chamber 14 between the quartz shield plate 3 and the quartz window 5, and both quartz shield plates 3 and 3. Inject between 3a.
その後、複数の赤外線ランプ９によりサセプタ２を加熱
し、サセプタ２上の基板４を伝導加熱し所定の温度に昇
温してから、反応ガス注入口10より一定流量の反応ガス
を反応室１内に注入しつつ排気ポンプ11により排気し、
反応室１内の圧力を所定の圧力に圧力制御弁16により制
御することにより基板４上に所望の薄膜を生成すること
ができる。After that, the susceptor 2 is heated by the plurality of infrared lamps 9, the substrate 4 on the susceptor 2 is conductively heated to a predetermined temperature, and then a constant flow rate of the reaction gas is supplied from the reaction gas inlet 10 into the reaction chamber 1. Exhausted by the exhaust pump 11 while injecting into
By controlling the pressure in the reaction chamber 1 to a predetermined pressure by the pressure control valve 16, a desired thin film can be formed on the substrate 4.
石英遮蔽板３と石英窓５との間の赤外線照射室14及び両
石英遮蔽板３，3a間にそれぞれ不活性ガス注入口６，6a
より不活性ガスを注入した時、石英遮蔽板３と石英窓５
との間に注入された不活性ガスは通気孔12を通り、円形
ループ状嵌合部８と円形ループ状突出部７との間に隙間
を通って両石英遮蔽板３，3a間に流入し、この不活性ガ
スは両石英遮蔽板３，3a間に注入された不活性ガスと通
気孔12aを通過して合流し、この合流した不活性ガスは
円形ループ状嵌合部8aと円形ループ状突出部7aとの間の
隙間を通って第１図，第２図の実線矢印で示すように反
応室１内に流入することになり、反応室１内への不活性
ガスの流路が十分に長くとれることと、反応室１内の反
応ガス（第２図の破線で示す）が円形ループ状嵌合部8a
と円形ループ状突出部7aとの間の隙間を通って逆拡散し
たとしても両石英遮蔽板３，3a間に注入された不活性ガ
スにより十分に希釈されることにより石英遮蔽板３と石
英窓５との間の照射室14に円形ループ状嵌合部８と円形
ループ状突出部７との隙間を通って逆拡散することはな
く、石英窓５に薄膜が生成付着せず、常時清浄な状態を
保つことができるから、サセプタ２へのエネルギーが減
衰せず、サセプタ２の温度が安定化することになる。An infrared irradiation chamber 14 between the quartz shield plate 3 and the quartz window 5 and an inert gas inlet 6, 6a between the quartz shield plates 3 and 3a.
When more inert gas is injected, the quartz shield plate 3 and the quartz window 5
The inert gas injected between the quartz shield plates 3 and 3a passes through the ventilation hole 12 and through the gap between the circular loop fitting portion 8 and the circular loop protruding portion 7. , This inert gas merges with the inert gas injected between the quartz shielding plates 3 and 3a through the ventilation hole 12a, and the merged inert gas forms a circular loop shape fitting part 8a and a circular loop shape. As shown by the solid arrows in FIGS. 1 and 2, it flows into the reaction chamber 1 through the gap between the protrusion 7a and the flow path of the inert gas into the reaction chamber 1 is sufficient. And the reaction gas in the reaction chamber 1 (shown by the broken line in FIG. 2) has a circular loop-shaped fitting portion 8a.
Even if it back-diffuses through the gap between the circular shield-like projection 7a and the circular loop-shaped protrusion 7a, it is sufficiently diluted by the inert gas injected between the quartz shielding plates 3 and 3a, so that the quartz shielding plate 3 and the quartz window 5 does not pass back through the gap between the circular loop-shaped fitting portion 8 and the circular loop-shaped protruding portion 7 in the irradiation chamber 14 between them, and a thin film does not form and adhere to the quartz window 5 and is always clean. Since the state can be maintained, the energy to the susceptor 2 is not attenuated and the temperature of the susceptor 2 is stabilized.
第３図の従来装置においては、基板50枚程度に膜生成す
る毎に石英窓５のクリーニングを実施していたが、本考
案装置にあっては基板1000枚以上に膜生成した後でも石
英窓のクリーニングを行う必要はなくなった。In the conventional apparatus shown in FIG. 3, the quartz window 5 is cleaned every time a film is formed on about 50 substrates, but in the apparatus of the present invention, the quartz window is cleaned even after the film is formed on 1000 or more substrates. You no longer need to do cleaning.
上記実施例の説明においては、加熱源として赤外線ラン
プを用いて説明したが、他のヒータ等の加熱装置を使用
しても実現できることは言うまでもない。In the description of the above embodiments, the infrared lamp is used as the heating source, but it goes without saying that it can be realized by using a heating device such as another heater.
また、基板４を設けたサセプタ２を、そのサセプタ２の
中心点を軸に水平方向に回転させる手段を設け、成膜の
均一性を向上させることも可能である。It is also possible to improve the uniformity of film formation by providing a means for horizontally rotating the susceptor 2 provided with the substrate 4 about the center point of the susceptor 2.
上述のように本考案によれば、石英遮蔽板を２重構造と
し、一方の石英遮蔽板３と石英窓５との間及び両石英遮
蔽板３，3a間に、不活性ガスを注入する不活性注入口
６，6aを設け、これらの石英遮蔽板３，3aとサセプタ２
との間に不活性ガスが流れる流路が形成されているの
で、石英遮蔽板３と石英窓５との間への反応ガスの逆拡
散（逆流）を防止でき、石英窓５に薄膜が生成付着する
ことがなくなり、サセプタ２の温度を安定化することが
でき、生成膜の膜厚均一性を著しく向上することができ
る。As described above, according to the present invention, the quartz shield plate has a double structure, and an inert gas is injected between the one quartz shield plate 3 and the quartz window 5 and between the both quartz shield plates 3 and 3a. Active injection ports 6 and 6a are provided, and these quartz shielding plates 3 and 3a and susceptor 2 are provided.
Since a flow path through which an inert gas flows is formed between and, it is possible to prevent the back diffusion of the reaction gas between the quartz shield plate 3 and the quartz window 5 and form a thin film in the quartz window 5. The adherence is eliminated, the temperature of the susceptor 2 can be stabilized, and the film thickness uniformity of the generated film can be significantly improved.
第１図は本考案装置の一実施例の構成を示す簡略断面
図、第２図はその要部の断面図、第３図は従来装置の一
例の構成を示す簡略断面図、第４図はその要部の断面図
である。 １……反応室、２……サセプタ、３，3a……石英遮蔽
板、４……基板、５……石英窓、６，6a……不活性ガス
注入口、７，7a……（円形）ループ状突出部、８，8a…
…（円形）ループ状嵌合部、９……赤外線ランプ、10…
…反応ガス注入口、11……排気装置（ポンプ）、12,12a
……通気孔。FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the device of the present invention, FIG. 2 is a sectional view of the essential parts thereof, FIG. 3 is a simplified sectional view showing the configuration of an example of a conventional device, and FIG. It is sectional drawing of the principal part. 1 ... Reaction chamber, 2 ... Susceptor, 3, 3a ... Quartz shielding plate, 4 ... Substrate, 5 ... Quartz window, 6, 6a ... Inert gas inlet, 7, 7a ... (Circle) Looped protrusions, 8, 8a ...
… (Circular) Loop-shaped fitting, 9 …… Infrared lamp, 10…
… Reactant gas inlet, 11 …… Exhaust device (pump), 12, 12a
...... Vents.
Claims (2)
支持し、このサセプタ２に基板４を設け、反応室１内に
反応ガスを注入しつつ排気し、基板４を設けたサセプタ
２を石英窓５外より加熱することにより基板４に薄膜を
生成する化学気相生成装置において、石英遮蔽板を２重
構造とし、一方の石英遮蔽板３と石英窓５との間及び両
石英遮蔽板３，3a間に、不活性ガスを注入する不活性注
入口６，6aを設け、これらの石英遮蔽板３，3aとサセプ
タ２との間に不活性ガスが流れる流路が形成されている
化学気相生成装置。1. A susceptor having a substrate 4 in which a susceptor 2 is supported by a quartz shield plate 3 in a reaction chamber 1, a substrate 4 is provided on the susceptor 2, and a reaction gas is exhausted while being injected into the reaction chamber 1. In a chemical vapor deposition apparatus for producing a thin film on a substrate 4 by heating 2 from the outside of a quartz window 5, the quartz shielding plate has a double structure, and one quartz shielding plate 3 and the quartz window 5 and both quartz Inert injection ports 6 and 6a for injecting an inert gas are provided between the shield plates 3 and 3a, and a flow path for the inert gas is formed between the quartz shield plates 3 and 3a and the susceptor 2. Chemical vapor generator.
プ状嵌合部８，8aを形成し、これらのループ状嵌合部
８，8aに嵌合するループ状突出部７，7aを石英遮蔽板
３，3aにそれぞれ設け、これらのループ状嵌合部８，8a
とループ状突出部７，7aを嵌合してサセプタ２を石英遮
蔽板３，3aに支持してなる請求項第１項記載の化学気相
生成装置。2. The lower surface of the susceptor 2 is concentrically formed with double loop-shaped fitting portions 8 and 8a, and the loop-shaped protruding portions 7 and 7a fitted into these loop-shaped fitting portions 8 and 8a. Are provided on the quartz shield plates 3 and 3a, respectively, and these loop-shaped fitting portions 8 and 8a are provided.
2. The chemical vapor phase generator according to claim 1, wherein the susceptor 2 is supported by the quartz shielding plates 3 and 3a by fitting the loop-shaped protrusions 7 and 7a together with the quartz shield plates 3 and 3a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324989U JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324989U JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02106460U JPH02106460U (en) | 1990-08-23 |
| JPH0630849Y2 true JPH0630849Y2 (en) | 1994-08-17 |
Family
ID=31223394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1324989U Expired - Lifetime JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630849Y2 (en) |
-
1989
- 1989-02-06 JP JP1324989U patent/JPH0630849Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02106460U (en) | 1990-08-23 |
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| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |