JPH02106460U - - Google Patents
Info
- Publication number
- JPH02106460U JPH02106460U JP1324989U JP1324989U JPH02106460U JP H02106460 U JPH02106460 U JP H02106460U JP 1324989 U JP1324989 U JP 1324989U JP 1324989 U JP1324989 U JP 1324989U JP H02106460 U JPH02106460 U JP H02106460U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- quartz
- loop
- chemical vapor
- generation device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 239000012808 vapor phase Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案装置の一実施例の構成を示す簡
略断面図、第２図はその要部の断面図、第３図は
従来装置の一例の構成を示す簡略断面図、第４図
はその要部の断面図である。
１……反応室、２……サセプタ、３，３ａ……
石英遮蔽板、４……基板、５……石英窓、６，６
ａ……不活性ガス注入口、７，７ａ……（円形）
ループ状突出部、８，８ａ……（円形）ループ状
嵌合部、９……赤外線ランプ、１０……反応ガス
注入口、１１……排気装置（ポンプ）、１２，１
２ａ……通気孔。
Fig. 1 is a simplified sectional view showing the configuration of an embodiment of the device of the present invention, Fig. 2 is a sectional view of its main parts, Fig. 3 is a simplified sectional view showing the configuration of an example of the conventional device, and Fig. 4 is a sectional view showing the configuration of an example of the conventional device. It is a sectional view of the main part. 1... Reaction chamber, 2... Susceptor, 3, 3a...
Quartz shielding plate, 4... Substrate, 5... Quartz window, 6, 6
a...Inert gas inlet, 7, 7a... (circular)
Loop-shaped protrusion, 8, 8a... (circular) loop-shaped fitting part, 9... Infrared lamp, 10... Reaction gas inlet, 11... Exhaust device (pump), 12, 1
2a...Vent hole.
Claims (1)
支持し、このサセプタ２に基板４を設け、反応室
１内に反応ガスを注入しつつ排気し、基板４を設
けたサセプタ２を石英窓５外より輻射加熱するこ
とにより基板４に薄膜を生成する化学気相生成装
置において、石英遮蔽板を２重構造とし、一方の
石英遮蔽板３と石英窓５との間及び両石英遮蔽板
３，３ａ間に、不活性ガスを注入する不活性注入
口６，６ａを設け、これらの石英遮蔽板３，３ａ
とサセプタ２との間に不活性ガスが流れる流路が
形成されている化学気相生成装置。 (2) サセプタ２の下面には同心状に２重のルー
プ状嵌合部８，８ａを形成し、これらのループ状
嵌合部８，８ａに嵌合するループ状突出部７，７
ａを石英遮蔽板３，３ａにそれぞれ設け、これら
のループ状嵌合部８，８ａとループ状突出部７，
７ａを嵌合してサセプタ２を石英遮蔽板３，３ａ
に支持してなる請求項第１項記載の化学気相生成
装置。[Claims for Utility Model Registration] (1) A susceptor 2 is supported on a quartz shielding plate 3 within a reaction chamber 1, a substrate 4 is provided on the susceptor 2, and a reaction gas is injected into the reaction chamber 1 while being exhausted; In a chemical vapor phase generation device that generates a thin film on the substrate 4 by radiant heating the susceptor 2 provided with the substrate 4 from outside the quartz window 5, the quartz shielding plate has a double structure, and one quartz shielding plate 3 and the quartz window 5 and between both quartz shielding plates 3, 3a, inert inlets 6, 6a for injecting inert gas are provided between these quartz shielding plates 3, 3a.
A chemical vapor phase generation device in which a flow path through which an inert gas flows is formed between and a susceptor 2. (2) Double loop-shaped fitting parts 8, 8a are formed concentrically on the lower surface of the susceptor 2, and loop-shaped protrusions 7, 7 are fitted into these loop-shaped fitting parts 8, 8a.
a are provided on the quartz shielding plates 3, 3a, respectively, and these loop-shaped fitting parts 8, 8a and loop-shaped protrusion parts 7,
7a and connect the susceptor 2 to the quartz shielding plates 3 and 3a.
2. The chemical vapor phase generation device according to claim 1, wherein the chemical vapor phase generation device is supported by a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324989U JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1324989U JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02106460U true JPH02106460U (en) | 1990-08-23 |
| JPH0630849Y2 JPH0630849Y2 (en) | 1994-08-17 |
Family
ID=31223394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1324989U Expired - Lifetime JPH0630849Y2 (en) | 1989-02-06 | 1989-02-06 | Chemical vapor phase generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630849Y2 (en) |
-
1989
- 1989-02-06 JP JP1324989U patent/JPH0630849Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0630849Y2 (en) | 1994-08-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |