JPH0299963U - - Google Patents
Info
- Publication number
- JPH0299963U JPH0299963U JP710389U JP710389U JPH0299963U JP H0299963 U JPH0299963 U JP H0299963U JP 710389 U JP710389 U JP 710389U JP 710389 U JP710389 U JP 710389U JP H0299963 U JPH0299963 U JP H0299963U
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- excitation light
- thin film
- silicon thin
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005284 excitation Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 230000001443 photoexcitation Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 2
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の装置の一実施例を示した図で
あり、第２図は従来の装置を示す。
１…反応室、２…基板、３…排気、４…励起光
、５…基板加熱用ヒータ、６…ガス導入口、７…
コリメータ、８…加熱フイラメント、９…イオン
化室。
FIG. 1 shows an embodiment of the device of the present invention, and FIG. 2 shows a conventional device. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 2... Substrate, 3... Exhaust, 4... Excitation light, 5... Substrate heating heater, 6... Gas inlet, 7...
Collimator, 8... heating filament, 9... ionization chamber.
Claims (1)
室と、同イオン化室とノズルを介して連通された
光励起反応室と、同反応室に励起光を照射する励
起光源とを有し、光励起反応室内に配置された基
板上にシリコン薄膜を形成することを特徴とする
シリコン薄膜製造装置。 It has an ionization chamber that ionizes the introduced silane gas, a photoexcitation reaction chamber that communicates with the ionization chamber through a nozzle, and an excitation light source that irradiates the reaction chamber with excitation light, and is placed inside the photoexcitation reaction chamber. A silicon thin film manufacturing device characterized by forming a silicon thin film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP710389U JPH0299963U (en) | 1989-01-25 | 1989-01-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP710389U JPH0299963U (en) | 1989-01-25 | 1989-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0299963U true JPH0299963U (en) | 1990-08-09 |
Family
ID=31211838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP710389U Pending JPH0299963U (en) | 1989-01-25 | 1989-01-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0299963U (en) |
-
1989
- 1989-01-25 JP JP710389U patent/JPH0299963U/ja active Pending
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