JPH0622202B2 - 光透過性電気伝導性薄膜の堆積方法および装置 - Google Patents

光透過性電気伝導性薄膜の堆積方法および装置

Info

Publication number
JPH0622202B2
JPH0622202B2 JP58232222A JP23222283A JPH0622202B2 JP H0622202 B2 JPH0622202 B2 JP H0622202B2 JP 58232222 A JP58232222 A JP 58232222A JP 23222283 A JP23222283 A JP 23222283A JP H0622202 B2 JPH0622202 B2 JP H0622202B2
Authority
JP
Japan
Prior art keywords
substrate
thin film
electrically conductive
deposition
conductive thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58232222A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59117178A (ja
Inventor
プレ−ム・ナス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Energy Conversion Devices Inc
Original Assignee
Canon Inc
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23779157&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH0622202(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Canon Inc, Energy Conversion Devices Inc filed Critical Canon Inc
Publication of JPS59117178A publication Critical patent/JPS59117178A/ja
Publication of JPH0622202B2 publication Critical patent/JPH0622202B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Non-Insulated Conductors (AREA)
JP58232222A 1982-12-09 1983-12-08 光透過性電気伝導性薄膜の堆積方法および装置 Expired - Lifetime JPH0622202B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/448,139 US4605565A (en) 1982-12-09 1982-12-09 Method of depositing a highly conductive, highly transmissive film
US448139 1982-12-09

Publications (2)

Publication Number Publication Date
JPS59117178A JPS59117178A (ja) 1984-07-06
JPH0622202B2 true JPH0622202B2 (ja) 1994-03-23

Family

ID=23779157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58232222A Expired - Lifetime JPH0622202B2 (ja) 1982-12-09 1983-12-08 光透過性電気伝導性薄膜の堆積方法および装置

Country Status (12)

Country Link
US (1) US4605565A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0112132B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0622202B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910007380B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU564776B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR8306745A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1219968A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3379489D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (2) ES527828A0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN163675B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
MX (1) MX155196A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ZA (1) ZA838885B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
US4639277A (en) * 1984-07-02 1987-01-27 Eastman Kodak Company Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material
EP0263880B1 (en) * 1986-03-12 1992-09-30 Tobi Co., Ltd. Continuous ion plating device for rapidly moving film
JPH0734332B2 (ja) * 1986-03-12 1995-04-12 株式会社ト−ビ 透明導電性フイルムの製造方法
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JP2686266B2 (ja) * 1988-01-28 1997-12-08 株式会社日立製作所 受光素子の製造方法
US5008215A (en) * 1989-07-07 1991-04-16 Industrial Technology Research Institute Process for preparing high sensitivity semiconductive magnetoresistance element
US5462771A (en) * 1992-11-09 1995-10-31 Akira Motoki Method of manufacturing electromagnetic wave shielding plastic molding
US5698262A (en) * 1996-05-06 1997-12-16 Libbey-Owens-Ford Co. Method for forming tin oxide coating on glass
US6153271A (en) * 1999-12-30 2000-11-28 General Vacuum, Inc. Electron beam evaporation of transparent indium tin oxide
KR20010078862A (ko) * 2001-05-02 2001-08-22 조육형 산화물 증착 플라스틱 필름의 연속 열처리 방법 및 시스템
EP1289025A1 (fr) * 2001-08-30 2003-03-05 Universite De Neuchatel Procédé de dépot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat
WO2004020686A2 (en) * 2002-08-28 2004-03-11 Moxtronics, Inc. A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices
CN1751140B (zh) * 2003-02-14 2011-02-02 克拉里宗有限公司 产生臭氧的装置和方法
US20070054158A1 (en) * 2005-09-07 2007-03-08 Ovshinsky Stanford R Combination of photovoltaic devices and batteries which utilize a solid polymeric electrolyte
US9276142B2 (en) 2010-12-17 2016-03-01 First Solar, Inc. Methods for forming a transparent oxide layer for a photovoltaic device
US8476105B2 (en) 2010-12-22 2013-07-02 General Electric Company Method of making a transparent conductive oxide layer and a photovoltaic device
JP2014107421A (ja) * 2012-11-28 2014-06-09 Shimadzu Corp 成膜装置、放射線検出器および放射線検出器の製造方法
US10270010B2 (en) 2014-01-28 2019-04-23 Kaneka Corporation Substrate with transparent electrode and method for producing same
RU2609764C1 (ru) * 2015-10-26 2017-02-02 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) Способ получения аморфных пленок халькогенидных стеклообразных полупроводников с эффектом фазовой памяти

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
US4342631A (en) * 1980-06-16 1982-08-03 Illinois Tool Works Inc. Gasless ion plating process and apparatus
US4336277A (en) * 1980-09-29 1982-06-22 The Regents Of The University Of California Transparent electrical conducting films by activated reactive evaporation
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
US4417092A (en) * 1981-03-16 1983-11-22 Exxon Research And Engineering Co. Sputtered pin amorphous silicon semi-conductor device and method therefor
JPS5880877A (ja) * 1981-11-10 1983-05-16 Konishiroku Photo Ind Co Ltd 太陽電池及びその製造方法

Also Published As

Publication number Publication date
ZA838885B (en) 1984-07-25
EP0112132A3 (en) 1985-07-03
ES8505838A1 (es) 1985-06-16
EP0112132A2 (en) 1984-06-27
KR910007380B1 (ko) 1991-09-25
ES527828A0 (es) 1985-06-16
ES8700977A1 (es) 1986-11-16
ES540320A0 (es) 1986-11-16
MX155196A (es) 1988-02-01
US4605565A (en) 1986-08-12
DE3379489D1 (en) 1989-04-27
KR850003480A (ko) 1985-06-17
JPS59117178A (ja) 1984-07-06
BR8306745A (pt) 1984-07-17
AU2223183A (en) 1984-06-14
AU564776B2 (en) 1987-08-27
IN163675B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-10-29
EP0112132B1 (en) 1989-03-22
CA1219968A (en) 1987-03-31

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