JPH06204472A - トレンチ形ソース／ドレーンｍｏｓｆｅｔの製造方法 - Google Patents
トレンチ形ソース／ドレーンｍｏｓｆｅｔの製造方法Info
- Publication number
- JPH06204472A JPH06204472A JP4162404A JP16240492A JPH06204472A JP H06204472 A JPH06204472 A JP H06204472A JP 4162404 A JP4162404 A JP 4162404A JP 16240492 A JP16240492 A JP 16240492A JP H06204472 A JPH06204472 A JP H06204472A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- conductive layer
- forming
- semiconductor substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 36
- 125000006850 spacer group Chemical group 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000005669 field effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1991P10303 | 1991-06-21 | ||
| KR1019910010303A KR930001452A (ko) | 1991-06-21 | 1991-06-21 | 트렌치형 소스/드레인 mosfet 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06204472A true JPH06204472A (ja) | 1994-07-22 |
Family
ID=19316081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4162404A Pending JPH06204472A (ja) | 1991-06-21 | 1992-06-22 | トレンチ形ソース／ドレーンｍｏｓｆｅｔの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH06204472A (ko) |
| KR (1) | KR930001452A (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103753A (ja) * | 2005-10-06 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP5449326B2 (ja) * | 2009-03-31 | 2014-03-19 | Ｊｘ日鉱日石金属株式会社 | ショットキー接合ｆｅｔの製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100273688B1 (ko) * | 1997-06-30 | 2000-12-15 | 김영환 | 모스펫및그제조방법 |
-
1991
- 1991-06-21 KR KR1019910010303A patent/KR930001452A/ko not_active Application Discontinuation
-
1992
- 1992-06-22 JP JP4162404A patent/JPH06204472A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103753A (ja) * | 2005-10-06 | 2007-04-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7468540B2 (en) | 2005-10-06 | 2008-12-23 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
| JP5449326B2 (ja) * | 2009-03-31 | 2014-03-19 | Ｊｘ日鉱日石金属株式会社 | ショットキー接合ｆｅｔの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930001452A (ko) | 1993-01-16 |
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