JPH0614479Y2 - 炭化ケイ素単結晶の液相エピタキシヤル成長装置 - Google Patents

炭化ケイ素単結晶の液相エピタキシヤル成長装置

Info

Publication number
JPH0614479Y2
JPH0614479Y2 JP1986127461U JP12746186U JPH0614479Y2 JP H0614479 Y2 JPH0614479 Y2 JP H0614479Y2 JP 1986127461 U JP1986127461 U JP 1986127461U JP 12746186 U JP12746186 U JP 12746186U JP H0614479 Y2 JPH0614479 Y2 JP H0614479Y2
Authority
JP
Japan
Prior art keywords
single crystal
silicon carbide
crucible
melt
carbide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1986127461U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6333623U (enExample
Inventor
保彦 松下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1986127461U priority Critical patent/JPH0614479Y2/ja
Publication of JPS6333623U publication Critical patent/JPS6333623U/ja
Application granted granted Critical
Publication of JPH0614479Y2 publication Critical patent/JPH0614479Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1986127461U 1986-08-20 1986-08-20 炭化ケイ素単結晶の液相エピタキシヤル成長装置 Expired - Lifetime JPH0614479Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986127461U JPH0614479Y2 (ja) 1986-08-20 1986-08-20 炭化ケイ素単結晶の液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986127461U JPH0614479Y2 (ja) 1986-08-20 1986-08-20 炭化ケイ素単結晶の液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS6333623U JPS6333623U (enExample) 1988-03-04
JPH0614479Y2 true JPH0614479Y2 (ja) 1994-04-13

Family

ID=31022236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986127461U Expired - Lifetime JPH0614479Y2 (ja) 1986-08-20 1986-08-20 炭化ケイ素単結晶の液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPH0614479Y2 (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645893A (en) * 1979-09-25 1981-04-25 Nippon Telegr & Teleph Corp <Ntt> Reducing method for defect of silicon single crystal
JPS58104096A (ja) * 1981-10-23 1983-06-21 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置

Also Published As

Publication number Publication date
JPS6333623U (enExample) 1988-03-04

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