JPH06112420A - 平面トポグラフィーによる自己整合単一マスクＣＭＯＳ／ＢｉＣＭＯＳウェルの形成方法 - Google Patents

平面トポグラフィーによる自己整合単一マスクＣＭＯＳ／ＢｉＣＭＯＳウェルの形成方法

Info

Publication number
JPH06112420A
JPH06112420A JP5029576A JP2957693A JPH06112420A JP H06112420 A JPH06112420 A JP H06112420A JP 5029576 A JP5029576 A JP 5029576A JP 2957693 A JP2957693 A JP 2957693A JP H06112420 A JPH06112420 A JP H06112420A
Authority
JP
Japan
Prior art keywords
well
layer
self
ssg
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5029576A
Other languages
English (en)
Japanese (ja)
Inventor
M Moslehi Mehrdad
エム．モスレヒ メールダッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH06112420A publication Critical patent/JPH06112420A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP5029576A 1991-12-30 1993-01-04 平面トポグラフィーによる自己整合単一マスクＣＭＯＳ／ＢｉＣＭＯＳウェルの形成方法 Pending JPH06112420A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/814,547 US5252501A (en) 1991-12-30 1991-12-30 Self-aligned single-mask CMOS/BiCMOS twin-well formation with flat surface topography
US814547 1991-12-30

Publications (1)

Publication Number Publication Date
JPH06112420A true JPH06112420A (ja) 1994-04-22

Family

ID=25215385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5029576A Pending JPH06112420A (ja) 1991-12-30 1993-01-04 平面トポグラフィーによる自己整合単一マスクＣＭＯＳ／ＢｉＣＭＯＳウェルの形成方法

Country Status (4)

Country Link
US (1) US5252501A (enExample)
EP (1) EP0550021A3 (enExample)
JP (1) JPH06112420A (enExample)
TW (1) TW217461B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980923B1 (ko) * 2005-07-19 2010-09-07 닛산 지도우샤 가부시키가이샤 반도체 장치 제조 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897163A (ja) 1994-07-28 1996-04-12 Hitachi Ltd 半導体ウエハの製造方法、半導体ウエハ、半導体集積回路装置の製造方法および半導体集積回路装置
US5583062A (en) * 1995-06-07 1996-12-10 Lsi Logic Corporation Self-aligned twin well process having a SiO2 -polysilicon-SiO2 barrier mask
US5770492A (en) * 1995-06-07 1998-06-23 Lsi Logic Corporation Self-aligned twin well process
US5763302A (en) * 1995-06-07 1998-06-09 Lsi Logic Corporation Self-aligned twin well process
US5670393A (en) * 1995-07-12 1997-09-23 Lsi Logic Corporation Method of making combined metal oxide semiconductor and junction field effect transistor device
KR0146080B1 (ko) * 1995-07-26 1998-08-01 문정환 반도체 소자의 트윈 웰 형성방법
US5547894A (en) * 1995-12-21 1996-08-20 International Business Machines Corporation CMOS processing with low and high-current FETs
US5670395A (en) * 1996-04-29 1997-09-23 Chartered Semiconductor Manufacturing Pte. Ltd. Process for self-aligned twin wells without N-well and P-well height difference
DE59813593D1 (de) * 1997-04-29 2006-07-27 Infineon Technologies Ag Verfahren zur Herstellung einer CMOS-Schaltungsanordnung
US5956583A (en) * 1997-06-30 1999-09-21 Fuller; Robert T. Method for forming complementary wells and self-aligned trench with a single mask
US6307230B1 (en) * 1999-01-05 2001-10-23 Texas Instruments Incorporated Transistor having an improved sidewall gate structure and method of construction
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication
US6207538B1 (en) 1999-12-28 2001-03-27 Taiwan Semiconductor Manufacturing Company Method for forming n and p wells in a semiconductor substrate using a single masking step
DE10052680C2 (de) * 2000-10-24 2002-10-24 Advanced Micro Devices Inc Verfahren zum Einstellen einer Form einer auf einem Substrat gebildeten Oxidschicht
US6586296B1 (en) * 2001-04-30 2003-07-01 Cypress Semiconductor Corp. Method of doping wells, channels, and gates of dual gate CMOS technology with reduced number of masks

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050965A (en) * 1975-10-21 1977-09-27 The United States Of America As Represented By The Secretary Of The Air Force Simultaneous fabrication of CMOS transistors and bipolar devices
US4424621A (en) * 1981-12-30 1984-01-10 International Business Machines Corporation Method to fabricate stud structure for self-aligned metallization
US4527325A (en) * 1983-12-23 1985-07-09 International Business Machines Corporation Process for fabricating semiconductor devices utilizing a protective film during high temperature annealing
US4558508A (en) * 1984-10-15 1985-12-17 International Business Machines Corporation Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step
JPH01161752A (ja) * 1987-12-18 1989-06-26 Toshiba Corp 半導体装置製造方法
US5070029A (en) * 1989-10-30 1991-12-03 Motorola, Inc. Semiconductor process using selective deposition
US5132241A (en) * 1991-04-15 1992-07-21 Industrial Technology Research Institute Method of manufacturing minimum counterdoping in twin well process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980923B1 (ko) * 2005-07-19 2010-09-07 닛산 지도우샤 가부시키가이샤 반도체 장치 제조 방법
KR101036963B1 (ko) * 2005-07-19 2011-05-25 닛산 지도우샤 가부시키가이샤 반도체 장치 제조 방법

Also Published As

Publication number Publication date
EP0550021A2 (en) 1993-07-07
EP0550021A3 (en) 1996-12-27
US5252501A (en) 1993-10-12
TW217461B (enExample) 1993-12-11

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