JPH0586853B2 - - Google Patents

Info

Publication number
JPH0586853B2
JPH0586853B2 JP59098090A JP9809084A JPH0586853B2 JP H0586853 B2 JPH0586853 B2 JP H0586853B2 JP 59098090 A JP59098090 A JP 59098090A JP 9809084 A JP9809084 A JP 9809084A JP H0586853 B2 JPH0586853 B2 JP H0586853B2
Authority
JP
Japan
Prior art keywords
film
gold
germanium
nickel
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59098090A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60242619A (ja
Inventor
Hiroshi Ito
Tadao Ishibashi
Takayuki Sugata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9809084A priority Critical patent/JPS60242619A/ja
Publication of JPS60242619A publication Critical patent/JPS60242619A/ja
Publication of JPH0586853B2 publication Critical patent/JPH0586853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9809084A 1984-05-16 1984-05-16 半導体オ−ム性電極の形成方法 Granted JPS60242619A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9809084A JPS60242619A (ja) 1984-05-16 1984-05-16 半導体オ−ム性電極の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9809084A JPS60242619A (ja) 1984-05-16 1984-05-16 半導体オ−ム性電極の形成方法

Publications (2)

Publication Number Publication Date
JPS60242619A JPS60242619A (ja) 1985-12-02
JPH0586853B2 true JPH0586853B2 (enrdf_load_stackoverflow) 1993-12-14

Family

ID=14210641

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9809084A Granted JPS60242619A (ja) 1984-05-16 1984-05-16 半導体オ−ム性電極の形成方法

Country Status (1)

Country Link
JP (1) JPS60242619A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2761735B2 (ja) * 1988-10-04 1998-06-04 株式会社村田製作所 耐熱性オーミック電極及び当該耐熱性オーミック電極の製造方法
US5179041A (en) * 1989-06-16 1993-01-12 Sumitomo Electric Industries, Ltd. Method for manufacturing an electrode structure for III-V compound semiconductor element
JPH0387067A (ja) * 1989-06-16 1991-04-11 Sumitomo Electric Ind Ltd 3―5族化合物半導体素子の電極構造及びその形成方法
JPH04298028A (ja) * 1991-03-26 1992-10-21 Murata Mfg Co Ltd オーミック電極の形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5880872A (ja) * 1981-11-09 1983-05-16 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS58210665A (ja) * 1982-06-02 1983-12-07 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS60242619A (ja) 1985-12-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term