JPH0586477B2 - - Google Patents

Info

Publication number
JPH0586477B2
JPH0586477B2 JP60189517A JP18951785A JPH0586477B2 JP H0586477 B2 JPH0586477 B2 JP H0586477B2 JP 60189517 A JP60189517 A JP 60189517A JP 18951785 A JP18951785 A JP 18951785A JP H0586477 B2 JPH0586477 B2 JP H0586477B2
Authority
JP
Japan
Prior art keywords
substrate
temperature
sputtering
electrode
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60189517A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250462A (ja
Inventor
Hidezo Sano
Yutaka Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18951785A priority Critical patent/JPS6250462A/ja
Publication of JPS6250462A publication Critical patent/JPS6250462A/ja
Publication of JPH0586477B2 publication Critical patent/JPH0586477B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP18951785A 1985-08-30 1985-08-30 スパツタリング装置 Granted JPS6250462A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18951785A JPS6250462A (ja) 1985-08-30 1985-08-30 スパツタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18951785A JPS6250462A (ja) 1985-08-30 1985-08-30 スパツタリング装置

Publications (2)

Publication Number Publication Date
JPS6250462A JPS6250462A (ja) 1987-03-05
JPH0586477B2 true JPH0586477B2 (enrdf_load_stackoverflow) 1993-12-13

Family

ID=16242606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18951785A Granted JPS6250462A (ja) 1985-08-30 1985-08-30 スパツタリング装置

Country Status (1)

Country Link
JP (1) JPS6250462A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594935B2 (ja) * 1987-04-01 1997-03-26 株式会社日立製作所 スパツタ成膜方法と装置
JPH07105422B2 (ja) * 1987-03-16 1995-11-13 東京エレクトロン株式会社 半導体ウエハ載置台
JPH083146B2 (ja) * 1989-10-16 1996-01-17 富士通株式会社 薄膜形成方法
KR940011708B1 (ko) * 1990-04-09 1994-12-23 니찌덴 아네루바 가부시끼가이샤 기판온도제어기구
KR19990085791A (ko) * 1998-05-21 1999-12-15 윤종용 반도체 제조 공정의 측정 설비

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940439U (ja) * 1982-09-08 1984-03-15 アイジ−工業株式会社 入隅用コ−ナパネル
JPS59181622A (ja) * 1983-03-31 1984-10-16 Fujitsu Ltd 半導体装置の製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices

Also Published As

Publication number Publication date
JPS6250462A (ja) 1987-03-05

Similar Documents

Publication Publication Date Title
JPH0586477B2 (enrdf_load_stackoverflow)
US6549393B2 (en) Semiconductor wafer processing apparatus and method
US5981913A (en) Static electricity chuck and wafer stage
KR100437977B1 (ko) 핫 플레이트 및 반도체 장치의 제조 방법
US20210313156A1 (en) Temperature and bias control of edge ring
US11967511B2 (en) Plasma processing apparatus
TW202004980A (zh) 極端均勻加熱基板支撐組件
US6022418A (en) Vacuum processing method
JPH1064983A (ja) ウエハステージ
JPH07130830A (ja) 半導体製造装置
JP7640553B2 (ja) 制御された冷却を伴う物理的気相堆積（ｐｖｄ）によってアルミニウムを堆積させるための方法及び装置
KR20090071060A (ko) 정전척 및 그를 포함하는 기판처리장치
WO2011125292A1 (ja) スパッタリング装置及びスパッタリング方法
JP3150027B2 (ja) プラズマ発生装置及びこのプラズマ発生装置を用いたプラズマ処理装置
JP3181501B2 (ja) 処理装置および処理方法
JPH088232A (ja) プラズマ処理方法
JPH1064984A (ja) ウエハステージ
US20220059375A1 (en) System and method for heating semiconductor wafers
KR0161376B1 (ko) 금속배선 형성방법 및 이에 사용되는 스퍼터링 장치
KR101147961B1 (ko) 반도체 제조설비의 정전척
JPH09228040A (ja) 薄膜形成装置および薄膜形成方法ならびにそれらを用いた半導体集積回路装置の製造方法
JPS6221209A (ja) 高周波アニ−ル方法
JP3529308B2 (ja) スパッタ装置及びスパッタ方法
KR101098858B1 (ko) 클리닝 방법 및 진공 처리 장치
KR102789158B1 (ko) 다중 구역 정전 척

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term