JPH058581B2 - - Google Patents

Info

Publication number
JPH058581B2
JPH058581B2 JP58123549A JP12354983A JPH058581B2 JP H058581 B2 JPH058581 B2 JP H058581B2 JP 58123549 A JP58123549 A JP 58123549A JP 12354983 A JP12354983 A JP 12354983A JP H058581 B2 JPH058581 B2 JP H058581B2
Authority
JP
Japan
Prior art keywords
layer
capacitor
insulating material
semiconductor body
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58123549A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5927565A (ja
Inventor
Gorie Ibu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5927565A publication Critical patent/JPS5927565A/ja
Publication of JPH058581B2 publication Critical patent/JPH058581B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP58123549A 1982-07-09 1983-07-08 半導体本体の表面に超小型回路と共に集積したコンデンサの製造方法およびこれから製造した装置 Granted JPS5927565A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8212137 1982-07-09
FR8212137A FR2530077A1 (fr) 1982-07-09 1982-07-09 Procede de realisation de condensateurs integres dans une structure microelectronique

Publications (2)

Publication Number Publication Date
JPS5927565A JPS5927565A (ja) 1984-02-14
JPH058581B2 true JPH058581B2 (enExample) 1993-02-02

Family

ID=9275874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58123549A Granted JPS5927565A (ja) 1982-07-09 1983-07-08 半導体本体の表面に超小型回路と共に集積したコンデンサの製造方法およびこれから製造した装置

Country Status (5)

Country Link
US (1) US4450048A (enExample)
EP (1) EP0098671B1 (enExample)
JP (1) JPS5927565A (enExample)
DE (1) DE3363164D1 (enExample)
FR (1) FR2530077A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575335B1 (fr) * 1984-12-21 1987-06-19 Thomson Csf Element capacitif integre sur une pastille de circuit integre, et procede de realisation de cet element capacitif
JPS63166236A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 電子装置
US4890192A (en) * 1987-04-09 1989-12-26 Microelectronics And Computer Technology Corporation Thin film capacitor
JPS6411347A (en) * 1987-07-03 1989-01-13 Rohm Co Ltd Monolithic integrated circuit
US5254493A (en) * 1990-10-30 1993-10-19 Microelectronics And Computer Technology Corporation Method of fabricating integrated resistors in high density substrates
US5120572A (en) * 1990-10-30 1992-06-09 Microelectronics And Computer Technology Corporation Method of fabricating electrical components in high density substrates
US5330619A (en) * 1993-02-01 1994-07-19 The Mead Corporation Method for repulping fibrous materials containing crosslinked polyamide wet strength agents with enzyme
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6660610B2 (en) * 1996-07-08 2003-12-09 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US6448615B1 (en) 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US6075272A (en) * 1998-03-30 2000-06-13 Micron Technology, Inc. Structure for gated lateral bipolar transistors
US6104066A (en) * 1998-03-30 2000-08-15 Micron Technology, Inc. Circuit and method for low voltage, voltage sense amplifier
US6107663A (en) * 1998-03-30 2000-08-22 Micron Technology, Inc. Circuit and method for gate-body structures in CMOS technology
US6097065A (en) * 1998-03-30 2000-08-01 Micron Technology, Inc. Circuits and methods for dual-gated transistors
US6049496A (en) * 1998-03-30 2000-04-11 Micron Technology, Inc. Circuit and method for low voltage, current sense amplifier
US6229342B1 (en) 1998-03-30 2001-05-08 Micron Technology, Inc. Circuits and method for body contacted and backgated transistors
US6307235B1 (en) 1998-03-30 2001-10-23 Micron Technology, Inc. Another technique for gated lateral bipolar transistors
US6458648B1 (en) 1999-12-17 2002-10-01 Agere Systems Guardian Corp. Method for in-situ removal of side walls in MOM capacitor formation
US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
DE10341059B4 (de) 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3785937A (en) * 1971-04-28 1974-01-15 W Mcmahon Thin film metallization process for microcircuits
US3864217A (en) * 1974-01-21 1975-02-04 Nippon Electric Co Method of fabricating a semiconductor device
US4157610A (en) * 1976-12-20 1979-06-12 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a field effect transistor
DE2912439A1 (de) * 1979-03-29 1980-10-16 Standard Elektrik Lorenz Ag Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Also Published As

Publication number Publication date
EP0098671A1 (fr) 1984-01-18
FR2530077A1 (fr) 1984-01-13
EP0098671B1 (fr) 1986-04-23
US4450048A (en) 1984-05-22
FR2530077B1 (enExample) 1984-11-23
DE3363164D1 (en) 1986-05-28
JPS5927565A (ja) 1984-02-14

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