DE3363164D1 - Process for interinsulating metallic parts by anodic oxidation, and device obtained by this method - Google Patents

Process for interinsulating metallic parts by anodic oxidation, and device obtained by this method

Info

Publication number
DE3363164D1
DE3363164D1 DE8383201007T DE3363164T DE3363164D1 DE 3363164 D1 DE3363164 D1 DE 3363164D1 DE 8383201007 T DE8383201007 T DE 8383201007T DE 3363164 T DE3363164 T DE 3363164T DE 3363164 D1 DE3363164 D1 DE 3363164D1
Authority
DE
Germany
Prior art keywords
interinsulating
anodic oxidation
device obtained
metallic parts
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383201007T
Other languages
English (en)
Inventor
Yves Gaulier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Rtc La Radiotechnique-Compelec SA
Radiotechnique Compelec RTC SA
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rtc La Radiotechnique-Compelec SA, Radiotechnique Compelec RTC SA, Philips Gloeilampenfabrieken NV filed Critical Rtc La Radiotechnique-Compelec SA
Application granted granted Critical
Publication of DE3363164D1 publication Critical patent/DE3363164D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE8383201007T 1982-07-09 1983-07-06 Process for interinsulating metallic parts by anodic oxidation, and device obtained by this method Expired DE3363164D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8212137A FR2530077A1 (fr) 1982-07-09 1982-07-09 Procede de realisation de condensateurs integres dans une structure microelectronique

Publications (1)

Publication Number Publication Date
DE3363164D1 true DE3363164D1 (en) 1986-05-28

Family

ID=9275874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383201007T Expired DE3363164D1 (en) 1982-07-09 1983-07-06 Process for interinsulating metallic parts by anodic oxidation, and device obtained by this method

Country Status (5)

Country Link
US (1) US4450048A (de)
EP (1) EP0098671B1 (de)
JP (1) JPS5927565A (de)
DE (1) DE3363164D1 (de)
FR (1) FR2530077A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575335B1 (fr) * 1984-12-21 1987-06-19 Thomson Csf Element capacitif integre sur une pastille de circuit integre, et procede de realisation de cet element capacitif
JPS63166236A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 電子装置
US4890192A (en) * 1987-04-09 1989-12-26 Microelectronics And Computer Technology Corporation Thin film capacitor
JPS6411347A (en) * 1987-07-03 1989-01-13 Rohm Co Ltd Monolithic integrated circuit
US5120572A (en) * 1990-10-30 1992-06-09 Microelectronics And Computer Technology Corporation Method of fabricating electrical components in high density substrates
US5254493A (en) * 1990-10-30 1993-10-19 Microelectronics And Computer Technology Corporation Method of fabricating integrated resistors in high density substrates
US5330619A (en) * 1993-02-01 1994-07-19 The Mead Corporation Method for repulping fibrous materials containing crosslinked polyamide wet strength agents with enzyme
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6660610B2 (en) * 1996-07-08 2003-12-09 Micron Technology, Inc. Devices having improved capacitance and methods of their fabrication
US6448615B1 (en) 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
US6075272A (en) * 1998-03-30 2000-06-13 Micron Technology, Inc. Structure for gated lateral bipolar transistors
US6229342B1 (en) 1998-03-30 2001-05-08 Micron Technology, Inc. Circuits and method for body contacted and backgated transistors
US6097065A (en) 1998-03-30 2000-08-01 Micron Technology, Inc. Circuits and methods for dual-gated transistors
US6104066A (en) 1998-03-30 2000-08-15 Micron Technology, Inc. Circuit and method for low voltage, voltage sense amplifier
US6049496A (en) * 1998-03-30 2000-04-11 Micron Technology, Inc. Circuit and method for low voltage, current sense amplifier
US6307235B1 (en) 1998-03-30 2001-10-23 Micron Technology, Inc. Another technique for gated lateral bipolar transistors
US6107663A (en) * 1998-03-30 2000-08-22 Micron Technology, Inc. Circuit and method for gate-body structures in CMOS technology
US6458648B1 (en) 1999-12-17 2002-10-01 Agere Systems Guardian Corp. Method for in-situ removal of side walls in MOM capacitor formation
US6613641B1 (en) * 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
DE10341059B4 (de) 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3785937A (en) * 1971-04-28 1974-01-15 W Mcmahon Thin film metallization process for microcircuits
US3864217A (en) * 1974-01-21 1975-02-04 Nippon Electric Co Method of fabricating a semiconductor device
US4157610A (en) * 1976-12-20 1979-06-12 Tokyo Shibaura Electric Co., Ltd. Method of manufacturing a field effect transistor
DE2912439A1 (de) * 1979-03-29 1980-10-16 Standard Elektrik Lorenz Ag Integrierter halbleiterschaltkreis mit integrierten speicherkapazitaeten

Also Published As

Publication number Publication date
EP0098671A1 (de) 1984-01-18
US4450048A (en) 1984-05-22
EP0098671B1 (de) 1986-04-23
JPH058581B2 (de) 1993-02-02
FR2530077B1 (de) 1984-11-23
JPS5927565A (ja) 1984-02-14
FR2530077A1 (fr) 1984-01-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee