JPH0584064B2 - - Google Patents
Info
- Publication number
- JPH0584064B2 JPH0584064B2 JP59178651A JP17865184A JPH0584064B2 JP H0584064 B2 JPH0584064 B2 JP H0584064B2 JP 59178651 A JP59178651 A JP 59178651A JP 17865184 A JP17865184 A JP 17865184A JP H0584064 B2 JPH0584064 B2 JP H0584064B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductivity type
- impurity
- region
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59178651A JPS6156448A (ja) | 1984-08-28 | 1984-08-28 | 相補型半導体装置の製造方法 |
US06/770,179 US4642878A (en) | 1984-08-28 | 1985-08-28 | Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions |
EP85110792A EP0173953B1 (en) | 1984-08-28 | 1985-08-28 | Method for manufacturing a semiconductor device having a gate electrode |
DE8585110792T DE3583472D1 (de) | 1984-08-28 | 1985-08-28 | Verfahren zum herstellen einer halbleiteranordnung mit gateelektrode. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59178651A JPS6156448A (ja) | 1984-08-28 | 1984-08-28 | 相補型半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6156448A JPS6156448A (ja) | 1986-03-22 |
JPH0584064B2 true JPH0584064B2 (enrdf_load_stackoverflow) | 1993-11-30 |
Family
ID=16052187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59178651A Granted JPS6156448A (ja) | 1984-08-28 | 1984-08-28 | 相補型半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6156448A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010145176A (ja) * | 2008-12-17 | 2010-07-01 | Denso Corp | 半導体装置およびその製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63252461A (ja) * | 1987-04-09 | 1988-10-19 | Nec Corp | Cmos型半導体装置の製造方法 |
JPH023242A (ja) * | 1988-06-17 | 1990-01-08 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
-
1984
- 1984-08-28 JP JP59178651A patent/JPS6156448A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010145176A (ja) * | 2008-12-17 | 2010-07-01 | Denso Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6156448A (ja) | 1986-03-22 |
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